Emerging Nanopixel Light-Emitting Displays: Significance, Challenges, and Prospects

A Comprehensive Review of Group-III Nitride Light-Emitting Diodes: From Millimeter to Micro-Nanometer Scales

This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people's lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.

Conversion of Photoluminescence Blinking Types in Single Colloidal Quantum Dots

Almost all colloidal quantum dots (QDs) exhibit undesired photoluminescence (PL) blinking, which poses a significant obstacle to their use in numerous luminescence applications. An in-depth study of the blinking behavior, along with the associated mechanisms, can provide critical opportunities for fabricating high-quality QDs for diverse applications. Here the blinking of a large series of colloidal QDs is investigated with different surface ligands, particle sizes, shell thicknesses, and compositions. It is found that the blinking behavior of single alloyed CdSe/ZnS QDs with a shell thickness of up to 2 nm undergoes an irreversible conversion from Auger-blinking to band-edge carrier blinking (BC-blinking). Contrastingly, single perovskite QDs with particle sizes smaller than their Bohr diameters exhibit reversible conversion between BC-blinking and more pronounced Auger-blinking. Changes in the effective trapping sites under different excitation conditions are found to be responsible for the blinking type conversions. Additionally, changes in shell thickness and particle size of QDs have a significant effect on the blinking type conversions due to altered wavefunction overlap between excitons and effective trapping sites. This study elucidates the discrepancies in the blinking behavior of various QD samples observed in previous reports and provides deeper understanding of the mechanisms underlying diverse types of blinking.

Memory-electroluminescence for multiple action-potentials combination in bio-inspired afferent nerves

The development of optoelectronics mimicking the functions of the biological nervous system is important to artificial intelligence. This work demonstrates an optoelectronic, artificial, afferent-nerve strategy based on memory-electroluminescence spikes, which can realize multiple action-potentials combination through a single optical channel. The memory-electroluminescence spikes have diverse morphologies due to their history-dependent characteristics and can be used to encode distributed sensor signals. As the key to successful functioning of the optoelectronic, artificial afferent nerve, a driving mode for light-emitting diodes, namely, the non-carrier injection mode, is proposed, allowing it to drive nanoscale light-emitting diodes to generate a memory-electroluminescence spikes that has multiple sub-peaks. Moreover, multiplexing of the spikes can be obtained by using optical signals with different wavelengths, allowing for a large signal bandwidth, and the multiple action-potentials transmission process in afferent nerves can be demonstrated. Finally, sensor-position recognition with the bio-inspired afferent nerve is developed and shown to have a high recognition accuracy of 98.88%. This work demonstrates a strategy for mimicking biological afferent nerves and offers insights into the construction of artificial perception systems.

Electron Oscillation-Induced Splitting Electroluminescence from Nano-LEDs for Device-Level Encryption

Data security is a major concern in digital age, which generally relies on algorithm-based mathematical encryption. Recently, encryption techniques based on physical principles are emerging and being developed, leading to the new generation of encryption moving from mathematics to the intersection of mathematics and physics. Here, device-level encryption with ideal security is ingeniously achieved using modulation of the electron-hole radiative recombination in a GaN-light-emitting diode (LED). When a nano-LED is driven in the non-carrier injection mode, the oscillation of confined electrons can split what should be a single light pulse into multiple pulses. The morphology (amplitude, shape, and pulse number) of those history-dependent multiple pulses that act as carriers for transmitted digital information depends highly on the parameters of the driving signals, which makes those signals mathematically uncrackable and can increase the volume and security of transmitted information. Moreover, a hardware and software platform are designed to demonstrate the encrypted data transmission based on the device-level encryption method, enabling recognition of the entire ASCII code table. The device-level encryption based on splitting electroluminescence provides an encryption method during the conversion process of digital signals to optical signals and can improve the security of LED-based communication.

In-Well Ionization from Monolayer Quantum Dots for Non-Carrier-Injection Electroluminescence

Quantum dot (QD) light-emitting devices operating in non-carrier-injection (NCI) mode have attracted intense interest. Revealing the source of carriers that support the periodic electroluminescence is important because there is no injection of carriers from the external electrode. Electrons/holes generated by well-to-well multiple ionization in adjacent QDs are generally recognized as the carrier source for electroluminescence, and the stacked QD layers are necessary. In this work, NCI electroluminescence (NCI-EL) from monolayer QDs is successfully demonstrated, which cannot be properly explained by the previously proposed mechanism of multiple ionization. A working mechanism related to periodic in-well ionization is proposed, in which electrons tunnel directly from the valence band of QDs to the conduction band to form free electrons and holes. The effects of driving voltage amplitude, frequency, and QD size on the NCI-EL performance are investigated. Finite element simulation is used to clarify the ionization process. We believe this work can extend the working mechanism model of NCI-EL from QDs and provide guidance for promoting QD-based light-emitting device performance.

Theoretical Study of LED Operating in Noncarrier Injection Mode

Non-carrier injection (NCI) mode is an emerging driving mode for light-emitting diodes (LEDs) with numerous advantages. Revealing the relationship between the current and the applied alternating voltage in mathematical formulas is of great significance for understanding the working mechanism of NCI–LEDs and improving device performance. In this work, a theoretical model of the relationship between NCI–LED current and time-varying voltage is constructed. Based on the theoretical model, the real-time current is derived, which is consistent with the experimental results. Key parameters that can improve device performance are discussed, including voltage amplitude, frequency, equivalent capacitance, and LED reverse current. The theory presented here can serve as an important guidance for the rational design of the NCI–LEDs.

Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation

Non-electrical contact and non-carrier injection (NEC&NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs), aiming for applications in nano-pixel light-emitting displays (NLEDs). However, the working mechanism of nano-LED operating in NEC&NCI mode is not clear yet. In particular, the questions comes down to how the inherent holes and electrons in the LED can support sufficient radiation recombination, which lacks a direct physical picture. In this work, a finite element simulation was used to study the working process of the nano-LED operating in the NEC&NCI mode to explore the working mechanisms. The energy band variation, carrier concentration redistribution, emission rate, emission spectrum, and current-voltage characteristics are studied. Moreover, the effect of the thickness of insulating layer that plays a key role on device performance is demonstrated. We believe this work can provide simulation guidance for a follow-up study of NEC&NCI-LED.