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Chen L, Zhao W, Xing K, You M, Wang X, Zheng RK. Anomalous Hall effect in Nd-doped Bi 1.1Sb 0.9STe 2 topological insulator single crystals. Phys Chem Chem Phys 2024; 26:2638-2645. [PMID: 38174415 DOI: 10.1039/d3cp05850f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi1.1Sb0.9STe2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi1.1Sb0.9STe2 single crystals provides a good platform for quantum transport studies and spintronic applications.
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Affiliation(s)
- Lei Chen
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China.
| | - Weiyao Zhao
- Department of Materials Science & Engineering, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, VIC 3800, Australia
| | - Kaijian Xing
- School of Physics & Astronomy, Monash University, Clayton, VIC 3800, Australia
| | - Mengyun You
- Institute for Superconducting and Electronic Materials, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Innovation Campus, University of Wollongong, NSW 2500, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials, and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Innovation Campus, University of Wollongong, NSW 2500, Australia
| | - Ren-Kui Zheng
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China.
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Yano R, Nagasaka S, Matsubara N, Saigusa K, Tanda T, Ito S, Yamakage A, Okamoto Y, Takenaka K, Kashiwaya S. Evidence of unconventional superconductivity on the surface of the nodal semimetal CaAg 1-xPd xP. Nat Commun 2023; 14:6817. [PMID: 37884509 PMCID: PMC10603147 DOI: 10.1038/s41467-023-42535-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 10/11/2023] [Indexed: 10/28/2023] Open
Abstract
Surface states of topological materials provide extreme electronic states for unconventional superconducting states. CaAg1-xPdxP is an ideal candidate for a nodal-line Dirac semimetal with drumhead surface states and no additional bulk bands. Here, we report that CaAg1-xPdxP has surface states that exhibit unconventional superconductivity (SC) around 1.5 K. Extremely sharp magnetoresistance, tuned by surface-sensitive gating, determines the surface origin of the ultrahigh-mobility "electrons." The Pd-doping elevates the Fermi level towards the surface states, and as a result, the critical temperature (Tc) is increased up to 1.7 K from 1.2 K for undoped CaAgP. Furthermore, a soft point-contact study at the surface of Pd-doped CaAgP proved the emergence of unconventional SC on the surface. We observed the bell-shaped conductance spectra, a hallmark of the unconventional SC. Ultrahigh mobility carriers derived from the surface flat bands generate a new class of unconventional SC.
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Affiliation(s)
- Rikizo Yano
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan.
| | - Shota Nagasaka
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Naoki Matsubara
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Kazushige Saigusa
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Tsuyoshi Tanda
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Seiichiro Ito
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Ai Yamakage
- Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Yoshihiko Okamoto
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan.
- Institute for Solid State Physics, the University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, 277-8581, Chiba, Japan.
| | - Koshi Takenaka
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan
| | - Satoshi Kashiwaya
- Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Aichi, Japan.
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3
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Yakovlev DS, Lvov DS, Emelyanova OV, Dzhumaev PS, Shchetinin IV, Skryabina OV, Egorov SV, Ryazanov VV, Golubov AA, Roditchev D, Stolyarov VS. Physical Vapor Deposition Features of Ultrathin Nanocrystals of Bi 2(Te xSe 1-x) 3. J Phys Chem Lett 2022; 13:9221-9231. [PMID: 36170663 DOI: 10.1021/acs.jpclett.2c02664] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Structural and electronic properties of ultrathin nanocrystals of chalcogenide Bi2(Tex Se1-x)3 were studied. The nanocrystals were formed from the parent compound Bi2Te2Se on as-grown and thermally oxidized Si(100) substrates using Ar-assisted physical vapor deposition, resulting in well-faceted single crystals several quintuple layers thick and a few hundreds nanometers large. The chemical composition and structure of the nanocrystals were analyzed by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, electron backscattering, and X-ray diffraction. The electron transport through nanocrystals connected to superconducting Nb electrodes demonstrated Josephson behavior, with the predominance of the topological channels [Stolyarov et al. Commun. Mater., 2020, 1, 38]. The present paper focuses on the effect of the growth conditions on the morphology, structural, and electronic properties of nanocrystals.
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Affiliation(s)
- Dmitry S Yakovlev
- Center for Advanced Mesoscience and Nanotechnology, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia
- Russian Quantum Center, Skolkovo, Moscow Region 143025, Russia
| | - Dmitry S Lvov
- Institute of Solid State Physics RAS, Chernogolovka, Moscow Region 142432, Russia
| | | | - Pave S Dzhumaev
- National Research Nuclear University MEPhI, Moscow 115409, Russia
| | - Igor V Shchetinin
- National University of Science and Technology MISIS, Moscow 119049, Russia
| | - Olga V Skryabina
- Center for Advanced Mesoscience and Nanotechnology, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia
- Institute of Solid State Physics RAS, Chernogolovka, Moscow Region 142432, Russia
- National University of Science and Technology MISIS, Moscow 119049, Russia
| | - Sergey V Egorov
- Russian Quantum Center, Skolkovo, Moscow Region 143025, Russia
- Institute of Solid State Physics RAS, Chernogolovka, Moscow Region 142432, Russia
| | - Valery V Ryazanov
- Russian Quantum Center, Skolkovo, Moscow Region 143025, Russia
- Institute of Solid State Physics RAS, Chernogolovka, Moscow Region 142432, Russia
- National University of Science and Technology MISIS, Moscow 119049, Russia
| | - Alexander A Golubov
- Faculty of Science and Technology, MESA+ Institute of Nanotechnology, Enschede 7500 AE, The Netherlands
| | - Dimitri Roditchev
- Laboratoire de Physique et d'Étude des Matériaux (LPEM), UMR-8213, ESPCI Paris, PSL Research University, CNRS, Sorbonne Université, Paris 75005, France
| | - Vasily S Stolyarov
- Center for Advanced Mesoscience and Nanotechnology, Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region 141700, Russia
- National University of Science and Technology MISIS, Moscow 119049, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
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4
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Hovhannisyan RA, Grebenchuk SY, Baranov DS, Roditchev D, Stolyarov VS. Lateral Josephson Junctions as Sensors for Magnetic Microscopy at Nanoscale. J Phys Chem Lett 2021; 12:12196-12201. [PMID: 34918928 DOI: 10.1021/acs.jpclett.1c03556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Lateral Josephson junctions (LJJ) made of two superconducting Nb electrodes coupled by Cu-film are applied to quantify the stray magnetic field of Co-coated cantilevers used in magnetic force microscopy (MFM). The interaction of the magnetic cantilever with LJJ is reflected in the electronic response of LJJ as well as in the phase shift of cantilever oscillations, simultaneously measured. The phenomenon is theorized and used to establish the spatial map of the stray field. Based on our findings, we suggest integrating LJJs directly on the tips of cantilevers and using them as nanosensors of local magnetic fields in scanning probe microscopes. Such probes are less invasive than conventional magnetic MFM cantilevers and simpler to realize than SQUID-on-tip sensors.
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Affiliation(s)
- Razmik A Hovhannisyan
- Advanced mesoscience and nanotechnology centre, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Department of Physics, Stockholm University, AlbaNova University Center, SE-10691 Stockholm, Sweden
| | - Sergey Yu Grebenchuk
- Advanced mesoscience and nanotechnology centre, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore
| | - Denis S Baranov
- Advanced mesoscience and nanotechnology centre, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia
| | - Dimitri Roditchev
- LPEM UMR-8213, ESPCI Paris, PSL Research University, CNRS, 75005 Paris, France
- INSP UMR-7588, Sorbonne Universite, CNRS, 75005 Paris, France
| | - Vasily S Stolyarov
- Advanced mesoscience and nanotechnology centre, Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Dukhov Research Institute of Automatics (VNIIA), 127055 Moscow, Russia
- National University of Science and Technology MISIS, Moscow 119049, Russia
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5
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Stolyarov VS, Pons S, Vlaic S, Remizov SV, Shapiro DS, Brun C, Bozhko SI, Cren T, Menshchikova TV, Chulkov EV, Pogosov WV, Lozovik YE, Roditchev D. Superconducting Long-Range Proximity Effect through the Atomically Flat Interface of a Bi 2Te 3 Topological Insulator. J Phys Chem Lett 2021; 12:9068-9075. [PMID: 34516738 DOI: 10.1021/acs.jpclett.1c02257] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report on structural and electronic properties of superconducting nanohybrids made of Pb grown in the ultrahigh vacuum on the atomically clean surface of single crystals of topological Bi2Te3. In situ scanning tunneling microscopy and spectroscopy demonstrated that the resulting network is composed of Pb-nanoislands dispersed on the surface and linked together by an amorphous atomic layer of Pb, which wets Bi2Te3. As a result, the superconducting state of the system is characterized by a thickness-dependent superconducting gap of Pb-islands and by a very unusual position-independent proximity gap between them. Furthermore, the data analysis and DFT calculations demonstrate that the Pb-wetting layer leads to significant modifications of both topological and trivial electronic states of Bi2Te3, which are responsible for the observed long-range proximity effect.
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Affiliation(s)
- Vasily S Stolyarov
- Laboratoire de Physique et d'Etudes des Matériaux, LPEM, UMR-8213, ESPCI Paris, PSL Research University, CNRS, Sorbonne University, 75005 Paris, France
- TQPSS Lab, Moscow Institute of Physics and Technology, Dolgoprudny, 141700 Moscow, Russia
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
| | - Stephane Pons
- Laboratoire de Physique et d'Etudes des Matériaux, LPEM, UMR-8213, ESPCI Paris, PSL Research University, CNRS, Sorbonne University, 75005 Paris, France
| | - Sergio Vlaic
- Laboratoire de Physique et d'Etudes des Matériaux, LPEM, UMR-8213, ESPCI Paris, PSL Research University, CNRS, Sorbonne University, 75005 Paris, France
| | - Sergey V Remizov
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
| | - Dmitriy S Shapiro
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
| | - Christophe Brun
- Institut des Nanosciences de Paris, UMR-7588, CNRS, Sorbonne University, F-75005 Paris, France
| | - Sergey I Bozhko
- Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
| | - Tristan Cren
- Institut des Nanosciences de Paris, UMR-7588, CNRS, Sorbonne University, F-75005 Paris, France
| | | | - Evgueni V Chulkov
- Departamento de Polí meros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Universidad del País Vasco UPV/EHU, Apartado 1072, 20080 San Sebastian/Donostia, Spain
- HSE University, 109028 Moscow, Russia
- Donostia International Physics Center (DIPC), San Sebastián/Donostia 20018, Basque Country, Spain
| | - Walter V Pogosov
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
- Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, 125412 Moscow, Russia
- HSE University, 109028 Moscow, Russia
| | - Yuriy E Lozovik
- Dukhov Research Institute of Automatics (VNIIA), Moscow 127055, Russia
- Institute of Spectroscopy RAS 108840 Troitsk, Moscow, Russia
- HSE University, 109028 Moscow, Russia
| | - Dimitri Roditchev
- Laboratoire de Physique et d'Etudes des Matériaux, LPEM, UMR-8213, ESPCI Paris, PSL Research University, CNRS, Sorbonne University, 75005 Paris, France
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