Spin-Gapless States in Two-Dimensional Molecular Ferromagnet Fe2(TCNQ)2

Unravelling abnormal in-plane stretchability of two-dimensional metal-organic frameworks by machine learning potential molecular dynamics

Two-dimensional (2D) metal-organic frameworks (MOFs) hold immense potential for various applications due to their distinctive intrinsic properties compared to their 3D analogues. Herein, we designed a highly stable NiF2(pyrazine)2 2D MOF in silico with a two-dimensional periodic wine-rack architecture. Extensive first-principles calculations and molecular dynamics (MD) simulations based on a newly developed machine learning potential (MLP) revealed that this 2D MOF exhibits huge in-plane Poisson's ratio anisotropy. This results in anomalous negative in-plane stretchability, as evidenced by an uncommon decrease in its in-plane area upon the application of uniaxial tensile strain, which makes this 2D MOF particularly attractive for flexible wearable electronics and ultra-thin sensor applications. We further demonstrated the unique capability of MLP to accurately predict the finite-temperature properties of MOFs on a large scale, exemplified by MLP-MD simulations with a dimension of 28.2 × 28.2 nm2, relevant to the length scale experimentally attainable for the fabrication of MOF films.

Mini-review of interesting properties in Mn2CoAl bulk and films

Heusler compounds exhibit many interesting properties, such as high thermopower, magnetocaloric properties, and even topological insulator states. Heusler Mn₂CoAl alloy has been experimentally and theoretically proposed as a promising spin-gapless semiconductor with novel electronic, magnetic, spintronic, transport, and topological properties. Furthermore, the spin-gapless semiconducting-like behaviors are also predicted in Mn₂CoAl films by measuring the transport and magnetic properties. This mini-review systematically summarizes the interesting properties of Mn₂CoAl bulk and Mn₂CoAl-based films. This mini-review is hoped to guide further experimental investigations and applications in the particular scientific community.

Self-assembled molecular nanowires on prepatterned Ge(001) surfaces

It is a long-standing goal to fabricate conductive molecular nanowires (NWs) on semiconductor surfaces. Anchoring molecules to pre-patterned surface nanostructures is a practical approach to construct molecular NWs on semiconductor surfaces. Previously, well-ordered inorganic Ge NWs were deduced to spontaneously grow onto Pt/Ge(001) surfaces after annealing at an elevated temperature. In this work, we further demonstrate that organic 7,7,8,8-tetracyanoquinodimethane (TCNQ) molecular NWs can self-assemble onto the atomic NWs on Pt/Ge(001) surfaces. The outer nitrogen atoms in TCNQ molecules hybridize with under-coordinated Ge atoms in Ge NWs with an energy release of ∼1.14 eV per molecule, and electrons transfer from Ge NWs to the frontier orbitals of anchored TCNQs resulting in a negatively charged state. This largely tailors the electronic configurations of TCNQs and Pt/Ge(001) surfaces, enhancing the electron transport along the dimer row direction. The TCNQ molecular NWs coupled with the Ge NWs represent an exemplary showcase for the fabrication of molecular NWs on semiconductor surfaces.

We reported a strategy for the self-assembly of molecular nanowires (NWs) on Ge(001) surfaces.