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Guo X, Li N, Yang X, Qi R, Wu C, Shi R, Li Y, Huang Y, García de Abajo FJ, Wang EG, Gao P, Dai Q. Hyperbolic whispering-gallery phonon polaritons in boron nitride nanotubes. NATURE NANOTECHNOLOGY 2023; 18:529-534. [PMID: 36823369 DOI: 10.1038/s41565-023-01324-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 01/11/2023] [Indexed: 05/21/2023]
Abstract
Light confinement in nanostructures produces an enhanced light-matter interaction that enables a vast range of applications including single-photon sources, nanolasers and nanosensors. In particular, nanocavity-confined polaritons display a strongly enhanced light-matter interaction in the infrared regime. This interaction could be further boosted if polaritonic modes were moulded to form whispering-gallery modes; but scattering losses within nanocavities have so far prevented their observation. Here, we show that hexagonal BN nanotubes act as an atomically smooth nanocavity that can sustain phonon-polariton whispering-gallery modes, owing to their intrinsic hyperbolic dispersion and low scattering losses. Hyperbolic whispering-gallery phonon polaritons on BN nanotubes of ~4 nm radius (sidewall of six atomic layers) are characterized by an ultrasmall nanocavity mode volume (Vm ≈ 10-10λ03 at an optical wavelength λ0 ≈ 6.4 μm) and a Purcell factor (Q/Vm) as high as 1012. We posit that BN nanotubes could become an important material platform for the realization of one-dimensional, ultrastrong light-matter interactions, with exciting implications for compact photonic devices.
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Affiliation(s)
- Xiangdong Guo
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Ning Li
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Xiaoxia Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
| | - Ruishi Qi
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Chenchen Wu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Ruochen Shi
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Yuehui Li
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Yang Huang
- School of Materials Science and Engineering, Hebei Key Laboratory of Boron Nitride Micro and Nano Materials, Hebei University of Technology, Tianjin, China
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels (Barcelona), Spain.
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain.
| | - En-Ge Wang
- Collaborative Innovation Center of Quantum Matter, Beijing, China
- Songshan Lake Materials Lab, Institute of Physics, Chinese Academy of Sciences, Guangdong, China
- School of Physics, Liaoning University, Shenyang, China
| | - Peng Gao
- International Center for Quantum Materials, Electron Microscopy Laboratory, School of Physics, Academy for Advanced Interdisciplinary Studies, Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China.
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Liu X, Xue M, Chen J. Broadband plasmonic indium arsenide photonic antennas. NANOSCALE 2023; 15:3135-3141. [PMID: 36723044 DOI: 10.1039/d2nr06590h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
An on-chip integrated mid-infrared Fabry-Perot (F-P) polariton resonator exhibits excellent biosensing, thermal emission, and quantum laser utility potential. However, the narrow optical response range and absence of optoelectronic tunability have hindered the development of a F-P phonon polariton resonator. The discovery of surface plasmons in semiconductor nanowires provides a novel route to F-P polariton resonator devices with a broadband optical response and multi-field tunability. Due to their high electron mobility and crystalline quality, InAs twinning superlattice (TSL) nanowires have become a promising candidate in plasmonic electronics. We systemically studied the F-P plasmonic resonance of individual InAs TSL nanowires with a scattering-type near-field optical microscope. Using a metallic AFM tip to excite surface plasmons, we can observe odd-order and even-order modes of F-P polariton resonance, breaking the symmetric selection rules. Through nano Fourier transform infrared spectroscopy, we found that InAs nanowires' F-P polariton resonances appear in a broadband frequency range (650-1100 cm-1) and calculated that the corresponding Q factor is 5-10. This semiconductor F-P polariton resonator with inherent electrical tunability will be essential in integrated nanophotonic circuits.
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Affiliation(s)
- Xinghui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mengfei Xue
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, Zhejiang 325001, China
| | - Jianing Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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