All in One: A Versatile n-Perovskite/p-Spiro-MeOTAD p-n Heterojunction Diode as a Photovoltaic Cell, Photodetector, and Memristive Photosynapse

Multifunctional two-dimensional perovskite based solar cells for photodetectors and resistive switching

The escalating interest in low-dimensional perovskites stems from their tunable optoelectronic traits and robust stability. The pursuit of multifaceted optoelectronic devices holds substantial importance for energy-efficient and space-constrained systems. This investigation showcases the realization of multifunctional two-dimensional perovskite solar cells, incorporating transient light detection and resistive switching functions within a single device, achievable by facile external bias adjustments. Serving as a photodetector, the device exhibits commendable self-powered photodetection attributes, including an exceptionally low dark current density of 1 nA mm-2, a remarkable specific detectivity of 7.67 × 1012 Jones, a swift response time of 0.60 μs, and an expansive linear dynamic range of 72 dB. As a memristor, it showcases enduring performance across 4 × 102 cycles, a substantial on/off ratio of 106, and a rapid operation time of less than 1 μs. This endeavor unveils a pioneering avenue for advancing high-performance, air-stable multifunctional two-dimensional perovskite electronics.

Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

A multifunctional optoelectronic device implementing photodetector, photosynapse, and photomemory is of increasing attention for neuromorphic system. This enables multiple devices to be replaced with a single device, which simplifies the structure of complex, highly integrated electronics. Here, a multifunctional c-axis-aligned crystalline indium gallium tin oxide thin-film transistor (TFT) optoelectronic device is demonstrated. The photodetecting and photosynaptic behaviors could be demonstrated by tuning of gate pulse. The device shows a high responsivity of 1.1 × 106  A W-1 to blue light (467 nm) and cutoff frequency (f-3dB ) of 2400 Hz exhibiting high frequency switching using a gate reset pulse. It is possible to implement photosynaptic behavior using persistent photoconductivity effect by applying a gate bias to make the TFT depletion mode. When potentiation and depression of synaptic weight are implemented with light pulse and gate voltage pulse, respectively, 64-state potentiation-depression curves are demonstrated with excellent nonlinearity of 1.13 and 2.03, respectively. When an artificial neural network is constructed with this device for the Modified National Institute of Standards and Technology training pattern recognition simulation, it shows a high pattern recognition accuracy of 90.4%.

Multilevel resistive switching in stable all-inorganic n-i-p double perovskite memristor

Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO₂/Cs₂AgBiBr₆/NiO_x/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.

Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process

With the increasing demand for artificially intelligent hardware systems for brain-inspired in-memory and neuromorphic computing, understanding the underlying mechanisms in the resistive switching of memristor devices is of paramount importance. Here, we demonstrate a two-step resistive switching set process involving a complex interplay among mobile halide ions/vacancies (I^-/V_I⁺) and silver ions (Ag⁺) in perovskite-based memristors with thin undoped buffer layers. The resistive switching involves an initial gradual increase in current associated with a drift-related halide migration within the perovskite bulk layer followed by an abrupt resistive switching associated with diffusion of mobile Ag⁺ conductive filamentary formation. Furthermore, we develop a dynamical model that explains the characteristic I-V curve that helps to untangle and quantify the switching regimes consistent with the experimental memristive response. This further insight into the two-step set process provides another degree of freedom in device design for versatile applications with varying levels of complexity.

Highly Efficient Perovskite Solar Cell Based on PVK Hole Transport Layer

A π-conjugated small molecule N, N'-bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB) was introduced into poly(9-vinylcarbazole) (PVK) as a hole transport layer (HTL) in inverted perovskite solar cells (PSCs). The NPB doping induces a better perovskite crystal growth, resulting in perovskite with a larger grain size and less defect density. Thus, the V_OC, J_SC, and FF of the PSC were all enhanced. Experimental results show that it can be ascribed to the reduction of surface roughness and improved hydrophilicity of the HTL. The effect of NPB on the aggregation of PVK was also discussed. This work demonstrates the great potential of PVK as the HTL of PSCs and provides an attractive alternative for HTL to realize high-efficiency PSCs.