Exciton Dynamics in Colloidal CdS Quantum Dots with Intense and Stokes Shifted Photoluminescence in a Single Decay Channel

Mechanistic Study of Amphiphilic-Assisted Self-Assembled Cadmium Sulfide Quantum Dots into 3D Superstructures

Self-assembling of nanoparticles into complex superstructures is very challenging, which usually depends on postorganizing techniques or pre-existing templates such as polypeptide chains or DNA or external stimulus. Such self-assembled processes typically lead to close-packed structures. Here, it has been demonstrated that under carefully template-free reaction conditions CdS quantum dots (QDs) could be synthesized and simultaneously self-assembled into complex superstructures without compromising individual QD properties. The superstructures of CdS QDs attained by the chemical-based method demonstrate Stokes-shifted photoluminescence (PL) from trap states. Remarkably, the PL decay of superstructures exhibits a single-exponential feature. This behavior is unusual for the synthesized superstructures, indicating that the trap states are restricted to a narrow range. The growth mechanism of these superstructures is explained through the formation of liquid crystal phases (LCPs) with the help of a small-angle X-ray scattering (SAXS) analysis.

InP quantum dots: Stoichiometry regulates carrier dynamics

The optical properties of non-toxic indium phosphide (InP) quantum dots (QDs) are impinged by the existence of characteristic deep trap states. Several surface engineering strategies have been adopted to improve their optical quality, which has promoted the use of InP QDs for various technological applications. An antithetical approach involves the effective utilization of the deep trap states in InP QDs to modulate back electron transfer rates. Here, we explore the influence of the core-size of InP on their In-to-P stoichiometry and charge transfer dynamics when bound to an acceptor molecule, decyl viologen (DV2+). The mechanism of interaction of InP and DV2+ based on the quenching sphere model established the presence of (i) a 1:1 complex of DV2+ bound on InP and (ii) immobile quenchers in the quenching sphere, depending on the concentration of DV2+. While the forward electron transfer rates from photoexcited InP to bound DV2+ does not substantially vary with an increase in core size, the back electron transfer rates are found to be retarded. Findings from inductively coupled plasma-optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS) reveal that the In to P ratio is higher for QDs with larger core size, which further brings about increased carrier trapping and a decreased rate of charge recombination. Furthermore, long-lived charge-separated states in DV2+ bound to InP, extending to hundreds of milliseconds, are obtained by varying the number of DV2+ in the quenching sphere of the QDs.

Single-Particle Dynamics of ZnS Shelling Induced Replenishment of Carrier Diffusion for Individual Emission Centers in CuInS2 Quantum Dots

Insights into blinking and photoactivation of aqueous copper indium sulfide (CIS) quantum dots have been obtained using fluorescence correlation spectroscopy (FCS) and fluorescence lifetime correlation spectroscopy (FLCS). An unusual excitation wavelength-dependence of photoactivation/photocorrosion is manifested in an increase in the initial correlation amplitude G(0) for λ_ex = 532 nm, but a decrease for λ_ex = 405 nm. This has been rationalized in terms of different contributions from surface-assisted recombination in the two cases. Blinking times obtained from the autocorrelation functions (ACFs) of the 100-200 ns lifetime component (core Cu-mediated recombination) are almost unaffected by shelling, but those from the ACF for the 10-30 ns lifetime (surface states) increase significantly. Absence of cross-correlation between the two recombinative states of bare CIS QDs and the emergence of an anticorrelation with the introduction of the ZnS shell are observed, indicating the diffusive nature of the two states for CIS-ZnS. The diffusion is inhibited in bare CIS QDs due to the preponderance of surface states.

Femtosecond transient absorption spectroscopy investigation into the electron transfer mechanism in photocatalysis

Femtosecond transient absorption spectroscopy (fs-TAS) is a powerful technique for monitoring the electron transfer kinetics in photocatalysis. Several important works have successfully elucidated the electron transfer mechanism in heterojunction photocatalysts (HPs) using fs-TAS measurements, and thus a timely summary of recent advances is essential. This feature article starts with a thorough interpretation of the operating principle of fs-TAS equipment, and the fundamentals of the fs-TAS spectra. Subsequently, the applications of fs-TAS in analyzing the dynamics of photogenerated carriers in semiconductor/metal HPs, semiconductor/carbon HPs, semiconductor/semiconductor HPs, and multicomponent HPs are discussed in sequence. Finally, the significance of fs-TAS in revealing the ultrafast interfacial electron transfer process in HPs is summarized, and further research on the applications of fs-TAS in photocatalysis is proposed. This feature article will provide deep insight into the mechanism of the enhanced photocatalytic performance of HPs from the perspective of electron transfer kinetics.