1
|
Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
Collapse
Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| |
Collapse
|
2
|
Zhang M, Liu Y, Guo F, Zhang B, Hu B, Li S, Yu W, Hao L. High-Performance Flexible Broadband Photothermoelectric Photodetectors Based on Tellurium Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6152-6161. [PMID: 38270102 DOI: 10.1021/acsami.3c17933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Mid- and far-infrared photodetectors that can operate at room temperature are essential for both civil and military applications. However, the widespread use of mid-to-far-infrared photonic technology faces challenges due to the need for low-temperature cooling of existing commercial semiconductors and the limited optical absorption efficiency of two-dimensional materials. We have utilized the photothermoelectric effect to fabricate a self-powered, broadband, and high-performance photodetector based on a one-dimensional tellurium nanorod array film. The device surpasses energy band gap limitations, functioning even at wavelengths up to approximately 10,600 nm. In particular, the detectivity of the device can reach 4.8 × 109 Jones at 4060 nm under room-temperature conditions, which is an order of magnitude higher than that of commercially available photodetectors. It demonstrates fast response and recovery times of 8.3 and 8.8 ms. Furthermore, the device demonstrates outstanding flexibility withstanding over 300 bending cycles and environmental stability. These results suggest a viable approach for designing and developing high-performance, room-temperature, wearable optoelectronic devices.
Collapse
Affiliation(s)
- Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Yunjie Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China
| |
Collapse
|
3
|
Ma Z, Ji X, Lin S, Chen X, Wu D, Li X, Zhang Y, Shan C, Shi Z, Fang X. Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300731. [PMID: 36854310 DOI: 10.1002/adma.202300731] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Revised: 02/19/2023] [Indexed: 06/18/2023]
Abstract
Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.
Collapse
Affiliation(s)
- Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Shuailing Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Institute of Optoelectronics, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
| |
Collapse
|
4
|
Liu W, Li M, Yang C, Wang N, Huang W, Li R, Wang J. Spherulitic Crystallization of CsCu 2I 3 for High Performance Ultraviolet Photodetectors. J Phys Chem Lett 2023; 14:7854-7859. [PMID: 37626306 DOI: 10.1021/acs.jpclett.3c01851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/27/2023]
Abstract
Ternary copper halides have become promising materials for UV photodetection due to their stability and eco-friendliness. However, the uncontrollable crystallization induces high-concentration defects in these films, inherently limiting further improvement in device performance. Herein, we reveal the antisolvent-assisted crystallization kinetics mechanism of CsCu2I3 during the film-forming process. The nucleation rate is manipulated by adjusting precursor supersaturation using different antisolvents, resulting in decreased density and preferential orientation of the nuclei within the wet film. Subsequent annealing leads to a homogeneous and low-defect CsCu2I3 film with 40-μm-scale spherulites. A resulting visible-blind ultraviolet photodetector exhibits a responsivity of 8.73 A W-1, a specific detectivity of 5.28 × 1012 jones, and a response speed of 1.12 ms. The unencapsulated photodetector shows negligible degradation of responsivity in ambient air (∼70% humidity) for one month. Moreover, the flexible device with a responsivity of 420.2 mA W-1 and a detectivity of 1.18 × 1012 jones also shows excellent bending stability.
Collapse
Affiliation(s)
- Wenbo Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Mingda Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Renzhi Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Changzhou University, Changzhou 213164, China
| |
Collapse
|