Enhancing the Photoinduced Interlayer Charge Transfer and Spatial Separation in Type-II Heterostructure of WS2 and Asymmetric Janus-MoSSe with Intrinsic Self-Build Electric Field

Charge self-regulation over in-plane two-dimensional/two-dimensional hetero-cocatalyst for robust photocatalytic hydrogen generation

The rationally designing and constructing atomic-level heterointerface of two-dimensional (2D) chalcogenides is highly desirable to overcome the sluggish H2O-activation process toward efficient solar-driven hydrogen evolution. Herein, a novel in-plane 2D/2D molybdenum disulfide-rhenium disulfide (ReS2-MoS2) heterostructure is well-designed to induce the charge self-regulation of active site by forming electron-enriched Re(4-δ)+ and electron-deficient S(2-δ)- sites, thus collectively facilitating the activation of adsorbed H2O molecules and its subsequent H2 evolution. Furthermore, the obtained in-plane heterogenous ReS2-MoS2 nanosheet can powerfully transfer photoexcited electrons to inhibit photocarrier recombination as observed by advanced Kelvin probe measurement (KPFM), in-situ X-ray photoelectron spectroscopy (XPS) and femtosecond transient absorption spectroscopy (fs-TAS). As expected, the obtained ReS2-MoS2/TiO2 photocatalyst achieves an outperformed H2-generation rate of 6878.3 μmol h-1 g-1 with visualizing H2 bubbles in alkaline/neutral conditions. This work about in-plane 2D/2D heterostructure with strong free-electron interaction provides a promising strategy for designing novel and efficient catalysts for various applications.

First-Principles High-Throughput Inverse Design of Direct Momentum-Matching Band Alignment van der Waals Heterostructures Utilizing Two-Dimensional Indirect Semiconductors

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted widespread attention in photocatalysis. Herein, we employ a novel strategy utilizing first-principles high-throughput inverse design of 2D Z-scheme heterojunctions for photocatalysis. This approach is anchored in high-throughput screening conditions, which are fundamentally based on the characteristics of carrier mechanisms influenced significantly by Z-scheme heterojunctions. A pivotal element of our screening process is the integration of the indirect-to-direct bandgap transition with momentum-matching band alignment in k-space, guiding us to combine two 2D indirect bandgap monolayers into direct Z-scheme heterojunctions characterized by pronounced interlayer excitons. Various stacking modes introduce extra and distinct degrees of freedom that can be useful for tuning the properties of heterostructures, encompassing factors such as components, stacking patterns, and sequences. We demonstrate that various stacking modes can facilitate the indirect-to-direct bandgap transition and the emergence of interlayer excitons. These findings provide exciting opportunities for designing Z-scheme heterojunctions in photocatalysis.

Electron-Phonon Coupling-Mediated Ultralong Carrier Lifetime in an All-Inorganic Two-Dimensional Cs2PbI2Cl2 Perovskite: Explanation for the High Antisite Defect Tolerance

Two-dimensional (2D) halide perovskite are appealing candidates for applications in optoelectronics and photovoltaics, but their energy conversion efficiency is severely limited by nonradiative electron-hole recombination. In most investigations, point defects with deep defect levels and deep charge-state transition levels in the band gap are treated as the carrier recombination centers. For the all-inorganic 2D Css 2PbI2Cl2, the IPb antisite defect is the most likely to form and cause nonradiative electron-hole recombination. By using density functional theory and ab initio nonradiative molecular dynamics calculations, we found that the IPb defect can introduce the deep acceptor and donor levels into the band gap. Because electron-phonon coupling gives rise to weak nonadiabatic coupling and rapid loss of electronic coherence, those levels lead to a reduction of the carrier loss and the prolongation of the excited-state carrier lifetime, thereby enhancing the photoelectric and defect tolerance properties of the Cs2PbI2Cl2 material. These results could deepen the understanding of the chemistry of defects and carrier dynamics in perovskite materials.

Insights into Photogenerated Carrier Dynamics and Overall Water Splitting of the CrS3/GeSe Heterostructure

Based on the nonadiabatic molecular dynamics (NAMD) simulations and the first-principles calculations, we explore the overall water-splitting schemes and the photogenerated carrier dynamics for two configurations (CG and CyG) of the CrS3/GeSe van der Waals heterostructures. The photocatalytic direct Z-schemes and carrier migration pathways for hydrogen and oxygen evolution reactions (HER/OER) are constructed based on the electronic properties. The solar-to-hydrogen efficiency (η'STH values) of the schemes can reach 10.60% and 10.17% and further rise under tensile strain. The NAMD results demonstrate similar transfer times of the electron/hole for HER/OER and more rapid electron-hole recombination in CG enables it to be superior to CyG in photocatalytic performance. Moreover, the Gibbs free energy indicates that both the HERs and OERs turn to spontaneously proceed with CG and CyG at pH = 0-12.37 and pH = 2.55-11.01, respectively. These facts reveal that the CrS3/GeSe heterostructure is promising in photocatalytic overall water splitting.

Unraveling the Effect of Stacking Configurations on Charge Transfer in WS2 and Organic Semiconductor Heterojunctions

Photoinduced interfacial charge transfer plays a critical role in energy conversion involving van der Waals (vdW) heterostructures constructed of inorganic nanostructures and organic materials. However, the effect of molecular stacking configurations on charge transfer dynamics is less understood. In this study, we demonstrated the tunability of interfacial charge separation in a type-II heterojunction between monolayer (ML) WS2 and an organic semiconducting molecule [2-(3″',4'-dimethyl-[2,2':5',2':5″,2″'-quaterthiophen]-5-yl)ethan-1-ammonium halide (4Tm)] by rational design of relative stacking configurations. The assembly between ML-WS2 and the 4Tm molecule forms a face-to-face stacking when 4Tm molecules are in a self-aggregation state. In contrast, a face-to-edge stacking is observed when 4Tm molecule is incorporated into a 2D organic-inorganic hybrid perovskite lattice. The face-to-face stacking was proved to be more favorable for hole transfer from WS2 to 4Tm and led to interlayer excitons (IEs) emission. Transient absorption measurements show that the hole transfer occurs on a time scale of 150 fs. On the other hand, the face-to-edge stacking resulted in much slower hole transfer without formation of IEs. This inefficient hole transfer occurs on a similar time scale as A exciton recombination in WS2, leading to the formation of negative trions. These investigations offer important fundamental insights into the charge transfer processes at organic-inorganic interfaces.