Prediction of Two-Dimensional Group IV Nitrides AxNy (A = Sn, Ge, or Si): Diverse Stoichiometric Ratios, Ferromagnetism, and Auxetic Mechanical Property

Rational design of 2D Janus P3m1 M2N3 (M = Cu, Zr, and Hf) and their surface-functionalized derivatives: ferromagnetic, piezoelectric, and photocatalytic properties

In this study, first-principles calculations were employed to rationally design two-dimensional (2D) Janus transition metal nitrides of P3m1 M2N3 phases, where M is a d-block element (Sc-Zn, Y-Cd, Hf-Hg). Among the 29 examined 2D M2N3, three 2D phases, namely P3m1 Cu2N3, Zr2N3, and Hf2N3, exhibit excellent thermodynamic, dynamic, mechanical, and thermal stabilities. These novel Janus 2D materials exhibit ferromagnetic metallic and half-metallic behavior. The related 2D Janus surface-functionalized derivatives, Cu2N3H, Cu2N3F, Cu2N3Cl, Zr2N3H, Hf2N3H, and Hf2N3F, are all dynamically stable. The 2D Janus P3m1 phases of Zr2N3H, Hf2N3H, and Hf2N3F, all with M in the +IV oxidation state, act as semiconductors in the visible region, with energy band gaps of 2.26-2.70 eV at the HSE06 level of theory. On the other hand, the 2D Janus P3m1 Cu2N3X phases (where X = H, F, and Cl) are ferromagnetic half-metals. Additionally, it has been unveiled that there are high hole mobilities (∼6 × 103 cm2 V-1 s-1) derived from the moderate deformation potential and effective mass in the 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases. Uniaxial strain engineering has demonstrated the outstanding in-plane piezoelectric properties of 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F with high d11 values (∼99.91 pm V-1). Furthermore, the desirable band-edge alignments and high anisotropic carrier mobilities of 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases indicate their potential as visible light-driven photocatalysts for water splitting reactions on different facets. These properties render 2D Janus P3m1 Zr2N3H, Hf2N3H, and Hf2N3F phases promising for use in optoelectronics, piezoelectric sensing, and photocatalysis applications.

Prediction of Zn2(V, Nb, Ta)N3 Monolayers for Optoelectronic Applications

A new family of ternary nitride materials, Zn2(V, Nb, Ta)N3 monolayers, is predicted. A fabrication mechanism of the Zn2(V, Nb, Ta)N3 monolayers is proposed based on the chemical vapor deposition approach used for their bulk counterparts. The calculations show that these monolayers are thermodynamically and environmentally stable and that the Zn2VN3 monolayer is the most stable and the easiest to synthesize. The Zn2VN3 monolayer also has the highest strength and elasticity. The Zn2(V, Nb, Ta)N3 monolayers are semiconductors with nearly equal direct and indirect band gaps. Considering optoelectronic properties, the predicted monolayers are transparent to the visible light and provide shielding in the ultraviolet region. Thus, the predicted Zn2(V, Nb, Ta)N3 monolayers are promising for applications in LED devices and as blocking layers in tandem solar cells.

Prediction of novel semi-conducting two-dimensional MX2 phosphides and chalcogenides (M = Zn, Cd; X = P, S, Se) with 5-membered rings

The discovery of novel two-dimensional (2D) materials is a significant obstacle for contemporary materials science. Research in the field of 2D materials has mainly focused on materials possessing 6-membered rings, high symmetry, and isotropic features. The examination of 2D materials presenting 5-membered rings, low symmetry and anisotropic characteristics properties has received scarce attention. In this study, we employed evolutionary algorithms and heuristic approaches combined with first-principles calculations to predict penta-MX2 structures (M = Zn, Cd; X = P, S, Se). All selected 2D penta-MX2 phases are dynamically, thermodynamically, mechanically, and thermally stable. Further discussion focuses on their structural, bonding, electronic and optoelectronic features. Our HSE06 calculations reveal that the penta-MP2, ZnPS, and MSSe structures are semiconductors with a band gap of 0.80-3.08 eV. Conversely, the 2D penta-MPSe (M = Zn, Cd) and CdPS phases are metallic. We additionally note that penta β-ZnP2 and CdP2 display direct band gaps (1.39 eV and 1.18 eV, respectively), while the penta α-ZnP2, ZnPS, ZnSSe, α-CdSSe and β-CdSSe possess indirect band gaps. Remarkably, 2D pentagonal MP2 (M = Zn, Cd), MSSe (M = Zn, Cd) and ZnPS 2D monolayers exhibit substantial optical absorption (>105 cm-1) throughout a broad range of the visible light spectra. Our results for crystal structure prediction expand the 2D penta-family of phosphides and chalcogenides, and demonstrate the potential of 2D penta-MX2 materials for optoelectronic applications.

High-pressure reactions between the pnictogens: the rediscovery of BiN

We explore chemical reactions within pnictogens with an example of bismuth and nitrogen under extreme conditions. Understanding chemical reactions between Bi and N, elements representing the first and the last stable elements of the nitrogen group, and the physical properties of their compounds under ambient and high pressure is far from being complete. Here, we report the high-pressure high-temperature synthesis of orthorhombic Pbcn BiN (S.G. #60) from Bi and N2 precursors at pressures above 40 GPa. Using synchrotron single-crystal X-ray diffraction on the polycrystalline sample, we solved and refined the compound's structure and studied its behavior and compressibility on decompression to ambient pressure. We confirm the stability of Pbcn BiN to pressures as low as 12.5(4) GPa. Below that pressure value, a group-subgroup phase transformation occurs, resulting in the formation of a non-centrosymmetric BiN solid with a space group Pca21 (S.G. #29). We use ab initio calculations to characterize the polymorphs of BiN. They also provide support and explanation for our experimental observations, in particular those corresponding to peculiar Bi-N bond evolution under pressure, resulting in a change in the coordination numbers of Bi and N as a function of pressure within the explored stability field of Pbcn BiN.

Two-dimensional superhard silicon nitrides with widely tunable bandgap, high carrier mobility and hole-doping-induced robust magnetism

The search for new forms of the traditional bulk materials to enrich their interactions and properties is an attractive subject in two-dimensional (2D) materials. In this work, novel tetra-hexa-mixed coordinated 2D silicon nitrides (Si3N4) and their analogues are systematically investigated via density functional theory. The results show the global minimum 2D structure, Si3N4 (T-aa), is a highly chemically and thermally stable superhard semiconductor with a wide indirect bandgap (about 6.0 eV), which is widely adjustable under both biaxial strain and vertical electric field. It also possesses anisotropic high carrier mobility, up to 5490 cm2 V-1 s-1 at room temperature. Besides, its nitride analogues of group IVA (Si, Ge, Sn, and Pb) exhibit diverse electronic structures with regular bandgap distribution. Remarkably, some nitride analogues display linearly increasing robust magnetism with hole doping. The theoretical Curie temperatures of Si3N4 and Sn3N4 with hole doping (1h+ per unit cell) are 298 and 180 K, respectively. The Si3N4 (T-aa) and its analogues have a variety of excellent properties to be potentially applied in various fields, e.g., semiconductor electronics, spintronics, high-temperature structural materials, and superhard materials.

First-principles structure prediction of two-dimensional HCN polymorphs obtained via formal molecular polymerization

In the present study, ab initio evolutionary algorithms and heuristic approach were used to predict new two-dimensional (2D) hydrogen cyanide crystalline phases based on HCN and HNC molecular building blocks. Our research revealed thirty-seven 2D HCN and HNC structures within six topological families which contain N₁, N₂ dimers, N₃ trimers, infinite poly-N motifs, or zigzag C-C chains. HSE06 functional calculations indicated that 2D 1Pmn2₁ HCN, 2Pma2 HCN, 3P2₁2₁2 HCN, and 6Pbcm HNC are direct semiconductors with band gaps E_g of 5.1, 4.2, 4.3, and 2.8 eV, respectively, and isovalent element substitutions (C by Ge/Si, and H by F) were performed to tune the electronic band gaps of the resulting 2D structures (E_g = 1.2-7.4 eV). Moreover, it has been found that the high in-plane Young's modulus (330.3-445.8 N m^-1) and strong tolerance of direct band transitions (E_g = 1.2-5.3 eV) against the external biaxial strains in these four 2D HCN structures endow them with potential applications in photofunctional and flexible electronic devices. Finally, ab initio molecular dynamics simulations showed that at 50 GPa and 400 K, HCN molecules in a bulk I4mm hydrogen cyanide molecular crystal can extend to 2D HCN covalent nets.