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Hu X, He X, Guo Z, Kamiya T, Wu J. Antisite-Defects Control of Magnetic Properties in MnSb 2Te 4. ACS NANO 2024; 18:738-749. [PMID: 38127649 DOI: 10.1021/acsnano.3c09064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The intrinsic magnetic topological materials Mn(Sb/Bi)2n+2Te3n+4 have attracted extensive attention due to their topological quantum properties. Although, the Mn-Sb/Bi antisite defects have been frequently reported to exert significant influences on both magnetism and band topology, their formation mechanism and the methods to manipulate their distribution and concentration remain elusive. Here, we present MnSb2Te4 as a typical example and demonstrate that Mn-Sb antisite defects and magnetism can be tuned by controlling the crystal growth conditions. The cooling rate is identified as the primary key parameter. Magnetization and chemical analysis demonstrate that a slower cooling rate would lead to a higher Mn concentration, a higher magnetic transition temperature, and a higher saturation moment. Further analysis indicates that the Mn content at the original Mn site (MnMn, 3a site) varies more significantly with the cooling rate than the Mn content at the Sb site (MnSb, 6c site). Based on experimental observations, magnetic phase diagrams regarding MnMn and MnSb concentrations are constructed. With the assistance of first-principles calculations, it is demonstrated that the Mn-Sb mixing states primarily result from the mixing entropy and the growth kinetics. The present findings offer valuable insights into defects engineering for preparation of two-dimensional quantum materials.
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Affiliation(s)
- Xinmeng Hu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xinyi He
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8501, Japan
| | - Zhilin Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Toshio Kamiya
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8501, Japan
| | - Jiazhen Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Micro/Nano-Porous Functional Materials, Southern University of Science and Technology, Shenzhen 518055, China
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Xiong J, Peng YH, Lin JY, Cen YJ, Yang XB, Zhao YJ. High Concentration Intrinsic Defects in MnSb 2Te 4. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5496. [PMID: 37570198 PMCID: PMC10420118 DOI: 10.3390/ma16155496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 07/20/2023] [Accepted: 08/03/2023] [Indexed: 08/13/2023]
Abstract
MnSb2Te4 has a similar structure to an emerging material, MnBi2Te4. According to earlier theoretical studies, the formation energy of Mn antisite defects in MnSb2Te4 is negative, suggesting its inherent instability. This is clearly in contrast to the successful synthesis of experimental samples of MnSb2Te4. Here, the growth environment of MnSb2Te4 and the intrinsic defects are correspondingly investigated. We find that the Mn antisite defect is the most stable defect in the system, and a Mn-rich growth environment favors its formation. The thermodynamic equilibrium concentrations of the Mn antisite defects could be as high as 15% under Mn-poor conditions and 31% under Mn-rich conditions. It is also found that Mn antisite defects prefer a uniform distribution. In addition, the Mn antisite defects can modulate the interlayer magnetic coupling in MnSb2Te4, leading to a transition from the ideal antiferromagnetic ground state to a ferromagnetic state. The ferromagnetic coupling effect can be further enhanced by controlling the defect concentration.
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Affiliation(s)
| | | | | | | | | | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510640, China; (J.X.); (Y.-H.P.); (J.-Y.L.); (Y.-J.C.); (X.-B.Y.)
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Mazzola F, Zhang Y, Olszowska N, Rosmus M, D’Olimpio G, Istrate MC, Politano GG, Vobornik I, Sankar R, Ghica C, Gao J, Politano A. Fermiology of Chiral Cadmium Diarsenide CdAs 2, a Candidate for Hosting Kramers-Weyl Fermions. J Phys Chem Lett 2023; 14:3120-3125. [PMID: 36952263 PMCID: PMC10084463 DOI: 10.1021/acs.jpclett.3c00005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Accepted: 03/20/2023] [Indexed: 06/18/2023]
Abstract
Nonmagnetic chiral crystals are a new class of systems hosting Kramers-Weyl Fermions, arising from the combination of structural chirality, spin-orbit coupling (SOC), and time-reversal symmetry. These materials exhibit nontrivial Fermi surfaces with SOC-induced Chern gaps over a wide energy range, leading to exotic transport and optical properties. In this study, we investigate the electronic structure and transport properties of CdAs2, a newly reported chiral material. We use synchrotron-based angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT) to determine the Fermiology of the (110)-terminated CdAs2 crystal. Our results, together with complementary magnetotransport measurements, suggest that CdAs2 is a promising candidate for novel topological properties protected by the structural chirality of the system. Our work sheds light on the details of the Fermi surface and topology for this chiral quantum material, providing useful information for engineering novel spintronic and optical devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers.
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Affiliation(s)
- Federico Mazzola
- Istituto
Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area
Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
- Department
of Molecular Sciences and Nanosystems, Ca’
Foscari University of Venice, I-30172 Venice, Italy
| | - Yanxue Zhang
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams,
Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
| | - Natalia Olszowska
- National
Synchrotron Radiation Centre SOLARIS, Jagiellonian
University, Czerwone Maki 98, PL-30392 Kraków, Poland
| | - Marcin Rosmus
- National
Synchrotron Radiation Centre SOLARIS, Jagiellonian
University, Czerwone Maki 98, PL-30392 Kraków, Poland
| | - Gianluca D’Olimpio
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via
Vetoio, I-67100 L’Aquila (AQ), Italy
| | | | - Grazia Giuseppina Politano
- Department
of Information Engineering, Infrastructures and Sustainable Energy
(DIIES), University “Mediterranea”
of Reggio Calabria, Loc. Feo di Vito, I-89122 Reggio Calabria, Italy
| | - Ivana Vobornik
- Istituto
Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area
Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
| | - Raman Sankar
- Institute
of Physics, Academia Sinica Nankang, Taipei 11529, Taiwan
| | - Corneliu Ghica
- National
Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
| | - Junfeng Gao
- Key
Laboratory of Materials Modification by Laser, Ion and Electron Beams,
Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
| | - Antonio Politano
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via
Vetoio, I-67100 L’Aquila (AQ), Italy
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