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Gao L, Liu Y, Liang Y, Gao N, Liu J, Li H. Structural stability and electronic and mechanical properties of nitrogen- and boron-doped fluorinated diamane. Phys Chem Chem Phys 2023; 25:24518-24525. [PMID: 37656439 DOI: 10.1039/d3cp03302c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
In this work, the structural, electronic and mechanical properties of fluorinated diamane (F-diamane) with N and B dopants are systemically investigated using first-principles calculation. The N atom tends to stay in the external substituted site without F saturation, while the B-doped structure of the substituted external site with F saturation is the most stable. Ab initio molecular dynamics simulations confirm the thermal stability. The band structures of stable doped structures are similar to that of pristine F-diamane, due to the slight contribution of the dopant to the band edges. In addition, after the introduction of the B dopant, the formation energy reduces, and the transition barrier of graphene bilayers into diamane is smaller, indicating the feasibility of graphene bilayer fluoridation. Furthermore, we find that these doped structures have mechanical stability with isotropic elastic constants, Young's modulus, shear modulus and Poisson's ratio. Our work would promote the synthesis and development of two-dimensional diamane.
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Affiliation(s)
- Lilin Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Yaning Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Yaqi Liang
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Nan Gao
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
- Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
| | - Junsong Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Hongdong Li
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
- Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
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Emelin EV, Cho HD, Korepanov VI, Varlamova LA, Erohin SV, Kim DY, Sorokin PB, Panin GN. Formation of Diamane Nanostructures in Bilayer Graphene on Langasite under Irradiation with a Focused Electron Beam. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12244408. [PMID: 36558260 PMCID: PMC9786889 DOI: 10.3390/nano12244408] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2022] [Revised: 12/01/2022] [Accepted: 12/03/2022] [Indexed: 05/27/2023]
Abstract
In the presented paper, we studied bilayer CVD graphene transferred to a langasite substrate and irradiated with a focused electron beam through a layer of polymethyl methacrylate (PMMA). Changes in the Raman spectra and an increase in the electrical resistance of bigraphene after irradiation indicate a local phase transition associated with graphene diamondization. The results are explained in the framework of the theory of a chemically induced phase transition of bilayer graphene to diamane, which can be associated with the release of hydrogen and oxygen atoms from PMMA and langasite due to the "knock-on" effect, respectively, upon irradiation of the structure with an electron beam. Theoretical calculations of the modified structure of bigraphene on langasite and the experimental evaluation of sp3-hybridized carbon fraction indicate the formation of diamane nanoclusters in the bigraphene irradiated regions. This result can be considered as the first realization of local tunable bilayer graphene diamondization.
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Affiliation(s)
- Eugenii V. Emelin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
| | - Hak Dong Cho
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
| | - Vitaly I. Korepanov
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
| | - Liubov A. Varlamova
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Sergey V. Erohin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Deuk Young Kim
- Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Pavel B. Sorokin
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
- Department of Semiconductors and Dielectrics, National University of Science and Technology MISIS, 119049 Moscow, Russia
| | - Gennady N. Panin
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432 Moscow, Russia
- Laboratory of Digital Material Science, National University of Science and Technology MISIS, 119049 Moscow, Russia
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