Pressure-Induced Electronic Topological Transition and Superconductivity in Topological Insulator Bi2Te2.1Se0.9

Manipulating Topological Phases in Magnetic Topological Insulators

Magnetic topological insulators (MTIs) are a group of materials that feature topological band structures with concurrent magnetism, which can offer new opportunities for technological advancements in various applications, such as spintronics and quantum computing. The combination of topology and magnetism introduces a rich spectrum of topological phases in MTIs, which can be controllably manipulated by tuning material parameters such as doping profiles, interfacial proximity effect, or external conditions such as pressure and electric field. In this paper, we first review the mainstream MTI material platforms where the quantum anomalous Hall effect can be achieved, along with other exotic topological phases in MTIs. We then focus on highlighting recent developments in modulating topological properties in MTI with finite-size limit, pressure, electric field, and magnetic proximity effect. The manipulation of topological phases in MTIs provides an exciting avenue for advancing both fundamental research and practical applications. As this field continues to develop, further investigations into the interplay between topology and magnetism in MTIs will undoubtedly pave the way for innovative breakthroughs in the fundamental understanding of topological physics as well as practical applications.

Effect of Material-Dependent Boundaries on the Interference Induced Enhancement of the Surface Superconductivity Temperature

Using the tight-binding Bogoliubov-de Gennes formalism, we describe the influence of the surface potential on the superconducting critical temperature at the surface. Surface details are taken into account within the framework of the self-consistent Lang-Kohn effective potential. The regimes of strong and weak coupling of superconducting correlations are considered. Our study reveals that, although the enhancement of the surface critical temperature, originating from the enhancement of the localized correlation due to the constructive interference between quasiparticle bulk orbits, can be sufficiently affected by the surface potential, this influence, nonetheless, strongly depends on the bulk material parameters, such as the effective electron density parameter and Fermi energy, and is likely to be negligible for some materials, in particular for narrow-band metals. Thus, superconducting properties of a surface can be controlled by the surface/interface potential properties, which offer an additional tuning knob for the superconducting state at the surface/interface.

Fermiology of Chiral Cadmium Diarsenide CdAs2, a Candidate for Hosting Kramers-Weyl Fermions

Nonmagnetic chiral crystals are a new class of systems hosting Kramers-Weyl Fermions, arising from the combination of structural chirality, spin-orbit coupling (SOC), and time-reversal symmetry. These materials exhibit nontrivial Fermi surfaces with SOC-induced Chern gaps over a wide energy range, leading to exotic transport and optical properties. In this study, we investigate the electronic structure and transport properties of CdAs₂, a newly reported chiral material. We use synchrotron-based angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT) to determine the Fermiology of the (110)-terminated CdAs₂ crystal. Our results, together with complementary magnetotransport measurements, suggest that CdAs₂ is a promising candidate for novel topological properties protected by the structural chirality of the system. Our work sheds light on the details of the Fermi surface and topology for this chiral quantum material, providing useful information for engineering novel spintronic and optical devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers.

Unveiling the Catalytic Potential of Topological Nodal-Line Semimetal AuSn4 for Hydrogen Evolution and CO2 Reduction

In recent years, the correlation between the existence of topological electronic states in materials and their catalytic activity has gained increasing attention, due to the exceptional electron conductivity and charge carrier mobility exhibited by quantum materials. However, the physicochemical mechanisms ruling catalysis with quantum materials are not fully understood. Here, we investigate the chemical reactivity, ambient stability, and catalytic activity of the topological nodal-line semimetal AuSn₄. Our findings reveal that the surface of AuSn₄ is prone to oxidation, resulting in the formation of a nanometric SnO₂ skin. This surface oxidation significantly enhances the material's performance as a catalyst for the hydrogen evolution reaction in acidic environments. We demonstrate that the peculiar atomic structure of oxidized AuSn₄ enables the migration of hydrogen atoms through the Sn-O layer with a minimal energy barrier of only 0.19 eV. Furthermore, the Volmer step becomes exothermic in the presence of Sn vacancies or tin-oxide skin, as opposed to being hindered in the pristine sample, with energy values of -0.62 and -1.66 eV, respectively, compared to the +0.46 eV energy barrier in the pristine sample. Our model also suggests that oxidized AuSn₄ can serve as a catalyst for the hydrogen evolution reaction in alkali media. Additionally, we evaluate the material's suitability for the carbon dioxide reduction reaction, finding that the presence of topologically protected electronic states enhances the migration of hydrogen atoms adsorbed on the catalyst to carbon dioxide.