Insights into Photogenerated Carrier Dynamics and Overall Water Splitting of the CrS3/GeSe Heterostructure

Rational Design of ZnO/Sc2CF2 Heterostructure with Tunable Electronic Structure for Water Splitting: A First-Principles Study

Heterostructures are highly promising photocatalyst candidates for water splitting due to their advanced properties than those of pristine components. The ZnO/Sc2CF2 heterostructure was designed in this work, and its electronic structure was investigated to explore its potential for water splitting. The assessments of binding energy, phonon spectrum, ab initio molecular dynamics, and elastic constants provide strong evidence for its stability. The ZnO/Sc2CF2 heterostructure has an indirect band gap of 1.93 eV with a type-Ⅰ band alignment. The electronic structure can be modified with strain, leading to a transition in band alignment from type-Ⅰ to type-Ⅱ. The heterostructure is suitable for water splitting since its VBM and CBM stride over the redox potential. The energy barrier and built-in electric field, resulting from the charge transfer, facilitate the spatial separation of photogenerated carriers, enhancing their utilization efficiency for redox processes. The photogenerated carriers in the heterostructures with lattice compression greater than 6% follow the direct-Z transfer mechanism. The ZnO/Sc2CF2 heterostructure is confirmed with high photocatalytic activity by a Gibbs free energy change of HER, which is 0.89 eV and decreases to -0.52 eV under an 8% compressive strain. The heterostructure exhibits a remarkable enhancement in both absorption range and intensity, which can be further improved with strains. All these findings suggest that the ZnO/Sc2CF2 heterostructure is an appreciated catalyst for efficient photocatalytic water splitting.

Electron-Phonon Coupling-Mediated Ultralong Carrier Lifetime in an All-Inorganic Two-Dimensional Cs2PbI2Cl2 Perovskite: Explanation for the High Antisite Defect Tolerance

Two-dimensional (2D) halide perovskite are appealing candidates for applications in optoelectronics and photovoltaics, but their energy conversion efficiency is severely limited by nonradiative electron-hole recombination. In most investigations, point defects with deep defect levels and deep charge-state transition levels in the band gap are treated as the carrier recombination centers. For the all-inorganic 2D Css 2PbI2Cl2, the IPb antisite defect is the most likely to form and cause nonradiative electron-hole recombination. By using density functional theory and ab initio nonradiative molecular dynamics calculations, we found that the IPb defect can introduce the deep acceptor and donor levels into the band gap. Because electron-phonon coupling gives rise to weak nonadiabatic coupling and rapid loss of electronic coherence, those levels lead to a reduction of the carrier loss and the prolongation of the excited-state carrier lifetime, thereby enhancing the photoelectric and defect tolerance properties of the Cs2PbI2Cl2 material. These results could deepen the understanding of the chemistry of defects and carrier dynamics in perovskite materials.