Surface Hydroxylation during Water Splitting Promotes the Photoactivity of BiVO4(010) Surface by Suppressing Polaron-Mediated Charge Recombination

Nuclear Quantum Effects Accelerate Charge Separation and Recombination in g-C3N4/TiO2 Heterojunctions

We combined ring-polymer molecular dynamics (MD) and ab initio MD with nonadiabatic MD to study the effects of nuclear quantum effects (NQEs) on interlayer electron transfer and electron-hole recombination at the g-C3N4/TiO2 interface. Our simulations indicate that NQEs significantly affect electron transfer and electron-hole recombination dynamics, accelerating both processes. NQEs deform the g-C3N4 layer and expedite the movement of carbon and nitrogen atoms, thus, enhancing charge delocalization and interlayer coupling. This improved overlap between electronic state wave functions enhances nonadiabatic couplings, facilitating electron transfer and recombination. In addition to the enhanced nonadiabatic couplings accelerating electron transfer, the presence of NQEs narrows the energy gap and delays decoherence by mitigating overall fluctuations, because of restricted TiO2 movements overwhelming enhanced g-C3N4 fluctuations, thereby making the recombination faster. This work provides valuable insights into NQEs in light-element systems and contributes to guiding the development of highly efficient photocatalysts.

Nonadiabatic Molecular Dynamics with Non-Condon Effect of Charge Carrier Dynamics

Nonradiative multiphonon transitions play a crucial role in understanding charge carrier dynamics. To capture the non-Condon effect in nonadiabatic molecular dynamics (NA-MD), we develop a simple and accurate method to calculate noncrossing and crossing k-point NA coupling in momentum space on an equal footing and implement it with a trajectory surface hopping algorithm. Multiple k-point MD trajectories can provide sufficient nonzero momentum multiphonons coupled to electrons, and the momentum conservation is maintained during nonvertical electron transition. The simulations of indirect bandgap transition in silicon and intra- and intervalley transitions in graphene show that incorporation of the non-Condon effect is needed to correctly depict these types of charge dynamics. In particular, a hidden process is responsible for the delayed nonradiative electron-hole recombination in silicon: the thermal-assisted rapid trapping of an excited electron at the conduction band minimum by a long-lived higher energy state through a nonvertical transition extends charge carrier lifetime, approaching 1 ns, which is about 1.5 times slower than the direct bandgap recombination. For graphene, intervalley scattering takes place within about 225 fs, which can occur only when the intravalley relaxation proceeds to about 50 fs to gain enough phonon momentum. The intra- and intervalley scattering constitute energy relaxation, which completes within sub-500 fs. All the simulated time scales are in excellent agreement with experiments. The study establishes the underlying mechanisms for a long-lived charge carrier in silicon and valley scattering in graphene and underscores the robustness of the non-Condon approximation NA-MD method, which is suitable for rigid, soft, and large defective systems.