Calculation Evidence of Staged Mott and Peierls Transitions in VO2 Revealed by Mapping Reduced-Dimension Potential Energy Surface

Recent Advances of VO2 in Sensors and Actuators

Vanadium dioxide (VO2) stands out for its versatility in numerous applications, thanks to its unique reversible insulator-to-metal phase transition. This transition can be initiated by various stimuli, leading to significant alterations in the material's characteristics, including its resistivity and optical properties. As the interest in the material is growing year by year, the purpose of this review is to explore the trends and current state of progress on some of the applications proposed for VO2 in the field of sensors and actuators using literature review methods. Some key applications identified are resistive sensors such as strain, temperature, light, gas concentration, and thermal fluid flow sensors for microfluidics and mechanical microactuators. Several critical challenges have been recognized in the field, including the expanded investigation of VO2-based applications across multiple domains, exploring various methods to enhance device performance such as modifying the phase transition temperature, advancing the fabrication techniques for VO2 structures, and developing innovative modelling approaches. Current research in the field shows a variety of different sensors, actuators, and material combinations, leading to different sensor and actuator performance input ranges and output sensitivities.

Plasmonic switches based on VO2as the phase change material

In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2is discussed and the reasons for employing VO2over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2proposed in the last decade is carried out. As the phase transition in VO2can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2operating in the visible, near-infrared, infrared and terahertz frequency regions.

Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures

The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.

A theoretical study on pseudo Mott phase transition of vanadium dioxide

The Peierls geometrical distortion rather than Mott electronic correlation always plays a decisive role in the thermally induced phase transition in which the presence of Coulomb repulsion between electrons does not have an effect.

Atomic and electronic structures of charge-doping VO2: first-principles calculations

The atomic and electronic structures of charge-doping VO₂ are investigated by using first-principles calculations. Hole doping is more conducive to stabilizing the structure of VO₂ than electron doping. The controllable phase transition temperature is coupled with changes in atomic and electronic structures. With the increase in hole density, the V–V chains and twisting angle experience a dramatic change, and the band gap (0.69–0 eV) is rapidly reduced due to orbital switching between the d_x²−y² and d_z²/d_yz orbitals. However, as the electron density increases, the band gap (0.69–0.502 eV) narrows slightly, while the V–O bond lengths significantly increase. The current results provide up a variable way to tune the VO₂ phase transition temperature through charge-doping.

The controllable phase transition temperature in charge doping VO₂ is coupled with changes in the atomic and electronic structures. The current results provide a variable way to tune the VO₂ phase transition temperature through charge doping.

Electron correlations and memory effects in ultrafast electron and hole dynamics in VO2

By applying an approach based on time-dependent density functional theory and dynamical mean-field theory (TDDFT+DMFT) we examine the role of electron correlations in the ultrafast breakdown of the insulating M₁ phase in bulk VO₂. We consider the case of a spatially homogeneous ultrafast (femtosecond) laser pulse perturbation and present the dynamics of the melting of the insulating state, in particular the time-dependence of the excited charge density. The time-dependence of the chemical potential of the excited electron and hole subsystems shows that even for such short times the dynamics of the system is significantly affected by memory effects-the time-resolved electron-electron interactions. The results pave the way for obtaining a microscopic understanding of the ultrafast dynamics of strongly-correlated materials.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films

Controlling the semiconductor-to-metal transition temperature in epitaxial VO₂ thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO₂ epitaxial thin films grown on TiO₂ substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V⁴⁺-V⁴⁺ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO₂/TiO₂ multilayer structures.

Study of entropic characteristics of strongly correlated systems using VO2 as a model case

To explain the huge caloric effects often observed in the first-order electronic phase transition in the strongly correlated oxides, the entropic characteristics are investigated in VO₂. By evaluating the spin and charge fluctuations based on the local moment model and the Sommerfeld coefficient in the high-temperature rutile phase, it is found that these fluctuations of the high-temperature phase are the main source of the entropic change during the transition. This mode of entropic change is realized by the quenching of these fluctuations owing to the formation of a singlet bonding state in the low-temperature monoclinic phase. By introducing oxygen deficiency, a vagueness in the gap at the Fermi level is confirmed by the transport data, the X-ray photoelectron spectra and also the electronic structure calculated by the first-principles calculations. In this case, the entropic feature at the transition is weakened. Consequently, the large caloric phenomena of the strongly correlated oxides are a result of the conversion of the internal energy gain owing to the orbital selection at the ground state into the free energy gain owing to the spin and charge fluctuations at finite temperature.

Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure’s crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices.

Photoheat-induced Schottky nanojunction and indirect Mott transition in VO₂: photocurrent analysis

In order to elucidate a mechanism of the insulator-to-metal transition (IMT) for a Mott insulator VO2 (3d(1)), we present Schottky nanojunctions and the structural phase transition (SPT) by simultaneous nanolevel measurements of photocurrent and Raman scattering in microlevel devices. The Schottky nanojunction with the monoclinic metallic phase between the monoclinic insulating phases is formed by the photoheat-induced IMT not accompanied with the SPT. The temperature dependence of the Schottky junction reveals that the Mott insulator has an electronic structure of an indirect subband between the main Hubbard d bands. The IMT as reverse process of the Mott transition occurs by temperature-induced excitation of bound charges in the indirect semiconductor band, most likely formed by impurities such as oxygen deficiency. The metal band (3d(1)) for the Mott insulator is screened (trapped) by the indirect band (impurities).