Real-Space Imaging of Carrier Dynamics of Materials Surfaces by Second-Generation Four-Dimensional Scanning Ultrafast Electron Microscopy

Mapping Surface-Defect and Ions Migration in Mixed-Cation Perovskite Crystals

Single crystal perovskites have garnered significant attention as potential replacements for existing absorber layer materials. Despite the extensive investigations on their photoinduced charge-carriers dynamics, most of the time-resolved techniques focus on bulk properties, neglecting surface characteristic which plays a crucial role for their optoelectronic performance. Herein, 4D ultrafast scanning electron microscopy (4D-USEM) is utilized to probing the photogenerated carrier transport at the first few nanometers, alongside density functional theory (DFT) to track both defect centers and ions migration. Two compositions of mixed cation are investigated: FA0.6MA0.4PbI3 and FA0.4MA0.6PbI3, interestingly, the former displays a longer lifetime compared to the latter due the presence of a higher surface-defect centers. DFT calculations fully support that revealing samples with higher FA content have a lower energy barrier for iodide ions to migrate from the bulk to top layer, assisting in passivating surface vacancies, and a higher energy diffusion barrier to escape from surface to vacuum, resulting in fewer vacancies and longer-lived hole-electron pairs. These findings manifest the influence of cation selection on charge carrier transport and formation of defects, and emphasize the importance of understanding ion migrations role in controlling surface vacancies to assist engineering high-performance optoelectronic devices based on single crystal perovskites.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Design and study of the shape parameters for the electrode plates of the electron gun in the four-dimensional transmission electron microscope

The accelerating electrode of a four-dimensional transmission electron microscope electron gun is modeled. The general expression of the electric-field distribution is derived for any point on the axis in a cylindrical coordinate system, and equations for the shape parameters of the electrode plate are obtained. The accuracy of the field expression is determined for different electrode plate parameters, and the shape parameters of the electron gun electrode are further investigated. This work can provide a theoretical basis for the initial design of a transmission electron microscope electron gun and the retrofit design of a four-dimensional electron gun.

Spatiotemporal Visualization of Photogenerated Carriers on an Avalanche Photodiode Surface Using Ultrafast Scanning Electron Microscopy

The spatiotemporal evolution of photogenerated charge carriers on surfaces and at interfaces of photoactive materials is an important issue for understanding fundamental physical processes in optoelectronic devices and advanced materials. Conventional optical probe-based microscopes that provide indirect information about the dynamic behavior of photogenerated carriers are inherently limited by their poor spatial resolution and large penetration depth. Herein, we develop an ultrafast scanning electron microscope (USEM) with a planar emitter. The photoelectrons per pulse in this USEM can be two orders of magnitude higher than that of a tip emitter, allowing the capture of high-resolution spatiotemporal images. We used the contrast change of the USEM to examine the dynamic nature of surface carriers in an InGaAs/InP avalanche photodiode (APD) after femtosecond laser excitation. It was observed that the photogenerated carriers showed notable longitudinal drift, lateral diffusion, and carrier recombination associated with the presence of photovoltaic potential at the surface. This work demonstrates an in situ multiphysics USEM platform with the capability to stroboscopically record carrier dynamics in space and time.

Phonon-driven transient bandgap renormalization in perovskite single crystals

Tailoring the electronic structure of perovskite materials on ultrafast timescales is expected to shed light on optimizing optoelectronic applications. However, the transient bandgap renormalization observed upon photoexcitation is commonly explained by many-body interactions of optically created electrons and holes, which shrink the original bandgap by a few tens of millielectronvolts with a sub-picosecond time constant, while the accompanying phonon-induced effect remains hitherto unexplored. Here we unravel a significant contribution of hot phonons in the photo-induced transient bandgap renormalization in MAPbBr3 single crystals, as evidenced by asymmetric spectral evolutions and transient reflection spectral shifts in the picosecond timescale. Moreover, we performed a spatiotemporal study upon optical excitation with time-resolved scanning electron microscopy and identified that the surface charge carrier diffusion and transient bandgap renormalization are strongly correlated in time. These findings highlight the need to re-evaluate current theories on photo-induced bandgap renormalization and provide a new approach for precisely controlling the optical and electronic properties of perovskite materials, enabling the design and fabrication of high-performance optoelectronic devices with exceptional efficiency and unique properties.

Decrypting Material Performance by Wide-field Femtosecond Interferometric Imaging of Energy Carrier Evolution

Energy carrier evolution is crucial for material performance. Ultrafast microscopy has been widely applied to visualize the spatiotemporal evolution of energy carriers. However, direct imaging of a small amount of energy carriers on the nanoscale remains difficult due to extremely weak transient signals. Here, we present a method for ultrasensitive and high-throughput imaging of energy carrier evolution in space and time. This method combines femtosecond pump-probe techniques with interferometric scattering microscopy (iSCAT), named Femto-iSCAT. The interferometric principle and unique spatially modulated contrast enhancement enable the exploration of new science. We address three important and challenging problems: transport of different energy carriers at various interfaces, heterogeneous hot-electron distribution and relaxation in single plasmonic resonators, and distinct structure-dependent edge-state dynamics of carriers and excitons in optoelectronic semiconductors. Femto-iSCAT holds great potential as a universal tool for ultrasensitive imaging of energy carrier evolution in space and time.

Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping

Visualizing charge carrier flow over interfaces or near surfaces meets great challenges concerning resolution and vastly different time scales of bulk and surface dynamics. Ultrafast or four-dimensional scanning electron microscopy (USEM) using a laser pump electron probe scheme circumvents the optical diffraction limit, but disentangling surface-mediated trapping and ultrafast carrier dynamics in a single measurement scheme has not yet been demonstrated. Here, we present lock-in USEM, which simultaneously visualizes fast bulk recombination and slow trapping. As a proof of concept, we show that the surface termination on GaAs, i.e., Ga or As, profoundly influences ultrafast movies. We demonstrate the differences can be attributed to trapping-induced surface voltages of approximately 100-200 mV, which is further supported by secondary electron particle tracing calculations. The simultaneous visualization of both competing processes opens new perspectives for studying carrier transport in layered, nanostructured, and two-dimensional semiconductors, where carrier trapping constitutes a major bottleneck for device efficiency.

Ultrafast electron imaging of surface charge carrier dynamics at low voltage

The performance of optoelectronic devices strongly depends on charge carrier dynamics on top of surfaces of the absorber layers. Unfortunately, this information cannot be selectively probed using conventional ultrafast laser spectroscopic methods, due to the large penetration depth (tens of nm to μm) of the photon pulses in the pump-probe configurations. Therefore, ultrafast time-resolved approaches that can directly and selectively visualize the behavior of the surface carrier dynamics are urgently needed. Here, we introduce a novel methodology of low-voltage scanning ultrafast electron microscopy that can take ultrafast time-resolved images (snapshots) of the surface of materials at the sub-nanometer level. By this approach, the surface of the photoactive materials is optically excited and imaged, using a pulsed low-voltage electron beam (1 keV) that interacts with the surface to generate secondary electrons with an energy of a few eV, and that are emitted only from the top surface of materials, providing direct information about the carrier dynamics and the localization of electron/holes in real space and time. An outlook on the potential applications of this low voltage approach in different disciplines will also be discussed.

Real-Space Mapping of Surface-Oxygen Defect States in Photovoltaic Materials Using Low-Voltage Scanning Ultrafast Electron Microscopy

Ultrathin layers of native oxides on the surface of photovoltaic materials may act as very efficient carrier trapping/recombination centers, thus significantly affecting their interfacial photophysical properties. How ultrathin oxide layers affect the surface and interface carrier dynamics cannot be selectively accessed by conventional ultrafast transient spectroscopic methods due to the deep penetration depth (tens to thousands of nanometers) of the pump/probe laser pulses. Herein, scanning ultrafast electron microscopy (S-UEM) at a low voltage of 1 keV electrons was recently developed at KAUST to selectively map the ultrafast charge carrier dynamics of a few layers on the top surfaces of photovoltaic materials. Unlike high-voltage 30 keV experiments, at 1 keV, the depth of detected secondary electrons (SEs) underneath the surface is significantly reduced 5 times, thus making it possible to visualize the dynamics of charge carrier from the uppermost surface of photoactive layers. More specifically, this new approach has been employed to explore and decipher the tremendous impact of native oxide layers and oxygen defect states on charge carrier dynamics in space and time simultaneously at sub-nanometer levels on several photovoltaic material surfaces, including Si, GaAs, CdTe, and CdZnTe single crystals. Interestingly, the contrast in the SEs time-resolved difference images switched from a dark "energy-loss mechanism" to a bright "energy-gain mechanism" only by removing the layers of surface oxides. Moreover, the charge carrier recombination was estimated and found to be dramatically affected by the native oxide layers. The density functional theory (DFT) calculations demonstrate that the work function of oxygen-terminated Si surface also increases slightly upon optical excitation and makes for less SE intensity, providing another piece of evidence that the origin of the dark contrast observed on these material surfaces should be assigned to the surface oxide formation, mainly oxygen defect states in the band gap and/or work function increment. Our findings provide a new method and pave the way for evaluating the effect of surface morphology and defects, including but not limited to native oxide, on charge carrier dynamics, and interfacial properties of photovoltaic absorber layers.

Electron-Induced State Conversion in Diamond NV Centers Measured with Pump-Probe Cathodoluminescence Spectroscopy

Nitrogen-vacancy (NV) centers in diamond are reliable single-photon emitters, with applications in quantum technologies and metrology. Two charge states are known for NV centers, NV⁰ and NV^-, with the latter being mostly studied due to its long electron spin coherence time. Therefore, control over the charge state of the NV centers is essential. However, an understanding of the dynamics between the different states still remains challenging. Here, conversion from NV^- to NV⁰ due to electron-induced carrier generation is shown. Ultrafast pump-probe cathodoluminescence spectroscopy is presented for the first time, with electron pulses as pump and laser pulses as probe, to prepare and read out the NV states. The experimental data are explained with a model considering carrier dynamics (0.8 ns), NV⁰ spontaneous emission (20 ns), and NV⁰ → NV^- back transfer (500 ms). The results provide new insights into the NV^- → NV⁰ conversion dynamics and into the use of pump-probe cathodoluminescence as a nanoscale NV characterization tool.

Femtosecond Laser-Induced Electron Emission from Nanodiamond-Coated Tungsten Needle Tips

We present femtosecond laser-induced electron emission from nanodiamond-coated tungsten tips. Based on the shortness of the femtosecond laser pulses, electrons can be photoexcited for wavelengths from the infrared (1932 nm) to the ultraviolet (235 nm) because multiphoton excitation becomes efficient over the entire spectral range. Depending on the laser wavelength, we find different dominant emission channels identified by the number of photons needed to emit electrons. Based on the band alignment between tungsten and nanodiamond, the relevant emission channels can be identified as specific transitions in diamond and its graphitic boundaries. It is the combination of the character of initial and final states (i.e., bulk or surface-near, direct or indirect excitation in the diamond band structure), the number of photons providing the excitation energy, and the peak intensity of the laser pulses that determines the dominant excitation channel for photoemission. A specific feature of the hydrogen-terminated nanodiamond coating is its negative electron affinity that significantly lowers the work function and enables efficient emission from the conduction band minimum into vacuum without an energy barrier. Emission is stable for bunch charges of up to 400 electrons per laser pulse. We infer a normalized emittance of <0.20  nm  rad and a normalized peak brightness of >1.2×10^{12}  A m^{-2} sr^{-1}. The properties of these tips are encouraging for their use as laser-triggered electron sources in applications such as ultrafast electron microscopy as well as diffraction and novel photonics-based laser accelerators.

Photoemission sources and beam blankers for ultrafast electron microscopy

Observing atomic motions as they occur is the dream goal of ultrafast electron microscopy (UEM). Great progress has been made so far thanks to the efforts of many scientists in developing the photoemission sources and beam blankers needed to create short pulses of electrons for the UEM experiments. While details on these setups have typically been reported, a systematic overview of methods used to obtain a pulsed beam and a comparison of relevant source parameters have not yet been conducted. In this report, we outline the basic requirements and parameters that are important for UEM. Different types of imaging modes in UEM are analyzed and summarized. After reviewing and analyzing the different kinds of photoemission sources and beam blankers that have been reported in the literature, we estimate the reduced brightness for all the photoemission sources reviewed and compare this to the brightness in the continuous and blanked beams. As for the problem of pulse broadening caused by the repulsive forces between electrons, four main methods available to mitigate the dispersion are summarized. We anticipate that the analysis and conclusions provided in this manuscript will be instructive for designing an UEM setup and could thus push the further development of UEM.

Visualization of Charge Carrier Trapping in Silicon at the Atomic Surface Level Using Four-Dimensional Electron Imaging

The ultrathin thickness (∼1-2 nm) of the native oxide layer on silicon surfaces, which acts as efficient trapping centers, precludes the possibility of studying its impact on the surface-charge carrier dynamics by conventional time-resolved laser spectroscopic techniques because of the large penetration depth of the pump and probe pulses. Here, we use four-dimensional scanning ultrafast electron microscopy (4D S-UEM) with unique surface sensitivity to directly visualize the charge carrier dynamics on Si(100) crystals before and after surface treatment (which removes the native oxide layer) in real space and time simultaneously. Our time-resolved snapshots of the top surface and Kelvin probe-force microscopy results demonstrate that the oxide layer can be formed within minutes after surface treatment, creating undesirable surface-trap states that destroy the population of photogenerated charge carriers on the surface and possibly at the device interface. This new surface observation provides critical photophysical insights into how a few atomic layers of oxide can dramatically influence charge carrier recombination dynamics in silicon solar cells.

Observation of dynamical crater-shaped charge distribution in the space-time imaging of monolayer graphene

A better understanding of charge carrier dynamics in graphene is key to improvement of its electronic performance. Here, we present direct space-time visualization of carrier relaxation and diffusion in monolayer graphene using time-resolved scanning electron microscopy techniques. We observed striking fluence-dependent dynamic images, changing from a Gaussian shape to a novel crater-shaped pattern with increasing laser fluence. Such direct observation of dynamic changes in spatial charge distribution is not readily available from the conventional spectroscopic approaches, which reflect essentially overall effective carrier temperature and density. According to our analysis, for this crater-shaped carrier density to occur in aggregated electron-hole pairs in the high fluence regime there exists an unconventional Auger-assisted carrier recombination process to provide effective relaxation channels, most likely involving emission of optical phonons and plasmons, which is dynamically accessible due to a strong temporal overlap among them. The presented model allows us to successfully account for these unexpected phenomena and to quantitatively analyze the observed spatiotemporal behavior.

Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy

Understanding light-triggered charge carrier dynamics near photovoltaic-material surfaces and at interfaces has been a key element and one of the major challenges for the development of real-world energy devices. Visualization of such dynamics information can be obtained using the one-of-a-kind methodology of scanning ultrafast electron microscopy (S-UEM). Here, we address the fundamental issue of how the thickness of the absorber layer may significantly affect the charge carrier dynamics on material surfaces. Time-resolved snapshots indicate that the dynamics of charge carriers generated by electron impact in the electron-photon dynamical probing regime is highly sensitive to the thickness of the absorber layer, as demonstrated using CdSe films of different thicknesses as a model system. This finding not only provides the foundation for potential applications of S-UEM to a wide range of devices in the fields of chemical and materials research, but also has impact on the use and interpretation of electron beam-induced current for optimization of photoactive materials in these devices.

Four-Dimensional Ultrafast Electron Microscopy: Insights into an Emerging Technique

Four-dimensional ultrafast electron microscopy (4D-UEM) is a novel analytical technique that aims to fulfill the long-held dream of researchers to investigate materials at extremely short spatial and temporal resolutions by integrating the excellent spatial resolution of electron microscopes with the temporal resolution of ultrafast femtosecond laser-based spectroscopy. The ingenious use of pulsed photoelectrons to probe surfaces and volumes of materials enables time-resolved snapshots of the dynamics to be captured in a way hitherto impossible by other conventional techniques. The flexibility of 4D-UEM lies in the fact that it can be used in both the scanning (S-UEM) and transmission (UEM) modes depending upon the type of electron microscope involved. While UEM can be employed to monitor elementary structural changes and phase transitions in samples using real-space mapping, diffraction, electron energy-loss spectroscopy, and tomography, S-UEM is well suited to map ultrafast dynamical events on materials surfaces in space and time. This review provides an overview of the unique features that distinguish these techniques and also illustrates the applications of both S-UEM and UEM to a multitude of problems relevant to materials science and chemistry.

Ultrafast transmission electron microscopy using a laser-driven field emitter: Femtosecond resolution with a high coherence electron beam

We present the development of the first ultrafast transmission electron microscope (UTEM) driven by localized photoemission from a field emitter cathode. We describe the implementation of the instrument, the photoemitter concept and the quantitative electron beam parameters achieved. Establishing a new source for ultrafast TEM, the Göttingen UTEM employs nano-localized linear photoemission from a Schottky emitter, which enables operation with freely tunable temporal structure, from continuous wave to femtosecond pulsed mode. Using this emission mechanism, we achieve record pulse properties in ultrafast electron microscopy of 9Å focused beam diameter, 200fs pulse duration and 0.6eV energy width. We illustrate the possibility to conduct ultrafast imaging, diffraction, holography and spectroscopy with this instrument and also discuss opportunities to harness quantum coherent interactions between intense laser fields and free-electron beams.

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy

Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and optoelectronics devices based on these NCs. In order to design efficient passivation techniques to minimize these trap states, a precise knowledge about the charge carrier dynamics on the NCs surface is essential. However, selective mapping of surface traps requires capabilities beyond the reach of conventional laser spectroscopy and static electron microscopy; it can only be accessed by using a one-of-a-kind, second-generation four-dimensional scanning ultrafast electron microscope (4D S-UEM) with subpicosecond temporal and nanometer spatial resolutions. Here, we precisely map the collective surface charge carrier dynamics of copper indium gallium selenide NCs as a function of the surface trap states before and after surface passivation in real space and time using S-UEM. The time-resolved snapshots clearly demonstrate that the density of the trap states is significantly reduced after zinc sulfide (ZnS) shelling. Furthermore, the removal of trap states and elongation of carrier lifetime are confirmed by the increased photocurrent of the self-biased photodetector fabricated using the shelled NCs.

Real-Space Visualization of Energy Loss and Carrier Diffusion in a Semiconductor Nanowire Array Using 4D Electron Microscopy

A breakthrough in the development of 4D scanning ultrafast electron microscopy is described for real-time and space imaging of secondary electron energy loss and carrier diffusion on the surface of an array of nanowires as a model system, providing access to a territory that is beyond the reach of either static electron imaging or any time-resolved laser spectroscopy.

Imaging Electronic Trap States in Perovskite Thin Films with Combined Fluorescence and Femtosecond Transient Absorption Microscopy

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. The remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.

Mapping Carrier Dynamics on Material Surfaces in Space and Time using Scanning Ultrafast Electron Microscopy

Selectively capturing the ultrafast dynamics of charge carriers on materials surfaces and at interfaces is crucial to the design of solar cells and optoelectronic devices. Despite extensive research efforts over the past few decades, information and understanding about surface-dynamical processes, including carrier trapping and recombination remains extremely limited. A key challenge is to selectively map such dynamic processes, a capability that is hitherto impractical by time-resolved laser techniques, which are limited by the laser's relatively large penetration depth and consequently these techniques record mainly bulk information. Such surface dynamics can only be mapped in real space and time by applying four-dimensional (4D) scanning ultrafast electron microscopy (S-UEM), which records snapshots of materials surfaces with nanometer spatial and subpicosecond temporal resolutions. In this method, the secondary electron (SE) signal emitted from the sample's surface is extremely sensitive to the surface dynamics and is detected in real time. In several unique applications, we spatially and temporally visualize the SE energy gain and loss, the charge carrier dynamics on the surface of InGaN nanowires and CdSe single crystal and its powder film. We also discuss the mechanisms for the observed dynamics, which will be the foundation for future potential applications of S-UEM to a wide range of studies on material surfaces and device interfaces.