Pressure Dependence of Mixed Conduction and Photo Responsiveness in Organolead Tribromide Perovskites

Pressure-Induced Enhancement and Retainability of Optoelectronic Properties in Layered Zirconium Disulfide

Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric properties under pressure, prompting researchers to investigate their structural phase transitions, electrical transport, and photoelectric response upon compression. Herein, the structural and photoelectric properties of layered ZrS2 under pressure using in situ high-pressure photocurrent, Raman scattering spectroscopy, alternating current impedance spectroscopy, absorption spectroscopy, and theoretical calculations are studied. The experimental results show that the photocurrent of ZrS2 continuously increases with increasing pressure. At 24.6 GPa, the photocurrent of high-pressure phase P21/m is three orders of magnitude greater than that of the initial phaseP 3 ¯ m 1 $P\bar{3}m1$ at ambient pressure. The minimum synthesis pressure for pure high-pressure phase P21/m of ZrS2 is 18.8 GPa, which exhibits a photocurrent that is two orders of magnitude higher than that of the initial phaseP 3 ¯ m 1 $P\bar{3}m1$ and displays excellent stability. Additionally, it is discovered that the crystal structure, electrical transport properties and bandgap of layered ZrS2 can also be regulated by pressure. This work offers researchers a new direction for synthesizing high-performance TMDs photoelectric materials using high pressure, which is crucial for enhancing the performance of photoelectric devices in the future.

Pressure-Tuning Photothermal Synergy to Optimize the Photoelectronic Properties in Amorphous Halide Perovskite Cs3 Bi2 I9

Effective modification of the structure and properties of halide perovskites via the pressure engineering strategy has attracted enormous interest in the past decade. However, sufficient effort and insights regarding the potential properties and applications of the high-pressure amorphous phase are still lacking. Here, the superior and tunable photoelectric properties that occur in the pressure-induced amorphization process of the halide perovskite Cs₃ Bi₂ I₉ are demonstrated. With increasing pressure, the photocurrent with xenon lamp illumination exhibits a rapid increase and achieves an almost five orders of magnitude increment compared to its initial value. Impressively, a broadband photoresponse from 520 to 1650 nm with an optimal responsivity of 6.81 mA W^-1 and fast response times of 95/96 ms at 1650 nm is achieved upon successive compression. The high-gain, fast, broadband, and dramatically enhanced photoresponse properties of Cs₃ Bi₂ I₉ are the result of comprehensive photoconductive and photothermoelectric mechanisms, which are associated with enhanced orbital coupling caused by an increase in BiI interactions in the [BiI₆ ]^3- cluster, even in the amorphous state. These findings provide new insights for further exploring the potential properties and applications of amorphous perovskites.

Pressure-Induced Tunable Charge Carrier Dynamics in Mn-Doped CsPbBr3 Perovskite

All-inorganic perovskite materials (CsPbX₃) have attracted increasing attention due to their excellent photoelectric properties and stable physical and chemical properties. The dynamics of charge carriers affect the photoelectric conversion efficiencies of perovskite materials. Regulating carrier dynamics by changing pressure is interesting with respect to revealing the key microphysical processes involved. Here, ultrafast spectroscopy combined with high-pressure diamond anvil cell technology was used to study the generation and transfer of photoinduced carriers of a Mn-doped inorganic perovskite CsPbBr₃ material under pressure. Three components were obtained and assigned to thermal carrier relaxation, optical phonon-acoustic phonon scattering and Auger recombination. The time constants of the three components changed under the applied pressures. Our experimental results show that pressure can affect the crystal structure of Mn-doped CsPbBr₃ to regulate carrier dynamics. The use of metal doping not only reduces the content of toxic substances but also improves the photoelectric properties of perovskite materials. We hope that our study can provide dynamic experimental support for the exploration of new photoelectric materials.

Application of impedance spectroscopy in exploring electrical properties of dielectric materials under high pressure

Impedance spectroscopy (IS) is an indispensable method of exploring electrical properties of materials. In this review, we provide an overview on the specific applications of IS measurement in the investigations of various electrical properties of materials under high pressure, including electric conduction in bulk and grain boundary, dielectric properties, ionic conduction, and electrostrictive effect. Related studies are summarized to demonstrate the method of analyzing different electrical transport processes with various designed equivalent circuits of IS and reveal some interesting phenomena of electrical properties of materials under high pressure.

Pressure effects on the metallization and dielectric properties of GaP

In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up to 30.2 GPa) on the metallization and dielectric properties of GaP. It is found that the carrier transport process changes from mixed grain and grain boundary conduction to pure grain conduction at 5.8 GPa, and due to pressure-induced structural phase transition, the resistance drops drastically by three orders of magnitude at 25.5 GPa. Temperature dependence of resistivity measurements and band structure calculations suggest the occurrence of a semiconductor-metal transition. Combining differential charge density and dielectric analysis, it is observed that the electron localization is weakened, which leads to increased polarization and larger relative permittivity in the zb structure. After the phase transition, both the polarization and the relative permittivity decrease. Pressure increases the complex dielectric constant and dielectric loss factor, due to the increase in relaxation polarization and the scattering effect of carriers. Moreover, by comparing the high-pressure behavior of GaP, GaAs and GaSb, the changes in the electronic structure and electric transport process caused by the phase transition can be understood, which can enable us to better understand the metallization behavior and dielectric properties of Ga-based III-V family semiconductors under pressure, and stimulate the design and modification of other related group III-V semiconductors for optoelectronic devices and sensors.

Long-lived electrets and lack of ferroelectricity in methylammonium lead bromide CH3NH3PbBr3 ferroelastic single crystals

Hybrid lead halides CH₃NH₃PbX₃ (X = I, Br, and Cl) have emerged as a new class of semiconductors for low-cost optoelectronic devices with superior performance. Since their perovskite crystal structure may have lattice instabilities against polar distortions, they are also being considered as potential photo-ferroelectrics. However, so far, research on their ferroelectricity has yielded inconclusive results and the subject is far from being settled. Here, we investigate, using a combined experimental and theoretical approach, the possible presence of electric polarization in tetragonal and orthorhombic CH₃NH₃PbBr₃ (T-MAPB and O-MAPB). We found that T-MAPB does not sustain spontaneous polarization but, under an external electric field, it is projected into a metastable, ionic space-charge electret state. The electret can be frozen on cooling, producing a large and long-lasting polarization in O-MAPB. Molecular dynamics simulations show that the ferroelastic domain boundaries are able to trap charges and segregate ionic point defects, thus playing a favorable role in the stabilization of the electret. At lower temperatures, the lack of ferroelectric behavior is explained using first principles calculations as the result of the tight competition among many metastable states with randomly oriented polarization; this large configurational entropy does not allow a single polar state to dominate at any significant temperature range.

The recent progress of synergistic supramolecular polymers: preparation, properties and applications

Interactions for forming supramolecular polymers were reviewed together with their unique properties and applications with detailed examples.

Pressure-Engineered Optical and Charge Transport Properties of Mn2+/Cu2+ Codoped CsPbCl3 Perovskite Nanocrystals via Structural Progression

In this work, compared with the corresponding pure CsPbCl₃ nanocrystals (NCs) and Mn²⁺-doped CsPbCl₃ NCs, Mn²⁺/Cu²⁺-codoped CsPbCl₃ NCs exhibited improved photoluminescence (PL) and photoluminescence quantum yields (PL QYs) (57.6%), prolonged PL lifetimes (1.78 ms), and enhanced thermal endurance (523 K) as a result of efficient Mn²⁺ doping (3.66%) induced by the addition of CuCl₂. Furthermore, we applied pressure on Mn²⁺/Cu²⁺-codoped CsPbCl₃ NCs to reveal that a red shift of photoluminescence followed by a blue shift was caused by band gap evolution and related to the structural phase transition from cubic to orthorhombic. Moreover, we also found that under the preheating condition of 523 K, such phase transition exhibited obvious morphological invariance, accompanied by significantly enhanced conductivity. The pressure applied to the products treated with high temperature enlarged the electrical difference and easily intensified the interface by closer packaging. Interestingly, defect-triggered mixed ionic and electronic conducting (MIEC) was observed in annealed NCs when the applied pressure was 2.9 GPa. The pressure-dependent ionic conduction was closely related to local nanocrystal amorphization and increased deviatoric stress, as clearly described by in situ impedance spectra. Finally, retrieved products exhibited better conductivity (improved by 5-6 times) and enhanced photoelectric response than those when pressure was not applied. Our findings not only reveal the pressure-tuned optical and electrical properties via structural progression but also open up the promising exploration of more amorphous all-inorganic CsPbX₃-based photoelectric applications.

Ultrafast carrier dynamics in all-inorganic CsPbBr3 perovskite across the pressure-induced phase transition

The excited-state carrier dynamics of lead halide perovskites play a critical role in their photoelectric properties, and are greatly affected by lattice structural changes. In this work, the carrier dynamics of all-inorganic CsPbBr₃ peroveskite, as a function of pressure, are investigated using in situ high-pressure femtosecond transient absorption spectroscopic experiments. Compression is found to drive crystal structural evolution, thereby markedly changing the behavior of charge carriers in CsPbBr₃. Before the phase transition, simultaneous prolonging of the carrier relaxation and Auger recombination is achieved alongside a narrowing in the bandgap. The results favor improved efficiency and photovoltaic performance.

Tunable photoluminescence and an enhanced photoelectric response of Mn2+-doped CsPbCl3 perovskite nanocrystals via pressure-induced structure evolution

Mn²⁺:CsPbCl₃ nanocrystals (NCs) were synthesized using a modified one-pot injection method, which exhibits significantly improved thermal stability. For the first time, the pressure-treated optical and structural properties of synthetic Mn²⁺:CsPbCl₃ NCs were further investigated, and their associated intriguing electrical and photoelectric properties were revealed from impedance spectra and photocurrent measurements under compression. The pressure-dependent photoluminescence experienced an initial redshift before 1.7 GPa followed by a continuous blueshift, as evidenced by the bandgap shifts. High-pressure XRD spectra uncovered a cubic-to-orthorhombic structural transition at about 1.1 GPa and subsequent amorphization upon further compression, which was fully reversible. Furthermore, the sample annealing from 340 K drove grain growth and decreased grain boundary resistance at ambient pressure. The compression further decreased the grain boundary barrier and improved the electrical conductivity (up to ∼10^-2Ω^-1 cm^-1) of the thermally annealed Mn²⁺:CsPbCl₃ NC surface. Simultaneous photocurrent enhancement of thermally annealed NCs was also achieved as expected, and reached optimal performance at 0.7 GPa. Strikingly, after the pressure cycling (loading-releasing), the results show that thermally annealed Mn²⁺:CsPbCl₃ NCs gained preservable higher electrical conductivity (∼10 times increase) and an improved photoelectric response compared to the ambient state before compression. This work proves that high pressure is useful for opening the versatility in the structure and properties of metal-halide perovskite nanocrystals leading to a promising way for superior optoelectronic materials-by-design.

Tuning Optical and Electronic Properties in Low-Toxicity Organic-Inorganic Hybrid (CH3NH3)3Bi2I9 under High Pressure

Low-toxicity, air-stable methylammonium bismuth iodide (CH₃NH₃)₃Bi₂I₉ has been proposed as a candidate to replace lead-based perovskites as highly efficient light absorbers for photovoltaic devices. Here, we investigated the effect of pressure on the optoelectronic properties and crystal structure of (CH₃NH₃)₃Bi₂I₉ up to 65 GPa at room temperature. We achieved impressive photoluminescence enhancement and band gap narrowing over a moderate pressure range. Dramatic piezochromism from transparent red to opaque black was observed in a single crystal sample. A structural phase transition from hexagonal P6₃/ mmc to monoclinic P2₁ at 5.0 GPa and completely reversible amorphization at 29.1 GPa were determined by in situ synchrotron X-ray diffraction. Moreover, the dynamically disordered MA⁺ organic cations in the hexagonal phase became orientationally ordered upon entering into the monoclinic phase, followed by static disorder upon amorphization. The striking enhancement of conductivity and metallization under high pressure indicate wholly new electronic properties.

Pressure-induced dramatic changes in organic-inorganic halide perovskites

Organic-inorganic halide perovskites have emerged as a promising family of functional materials for advanced photovoltaic and optoelectronic applications with high performances and low costs. Various chemical methods and processing approaches have been employed to modify the compositions, structures, morphologies, and electronic properties of hybrid perovskites. However, challenges still remain in terms of their stability, the use of environmentally unfriendly chemicals, and the lack of an insightful understanding into structure-property relationships. Alternatively, pressure, a fundamental thermodynamic parameter that can significantly alter the atomic and electronic structures of functional materials, has been widely utilized to further our understanding of structure-property relationships, and also to enable emergent or enhanced properties of given materials. In this perspective, we describe the recent progress of high-pressure research on hybrid perovskites, particularly regarding pressure-induced novel phenomena and pressure-enhanced properties. We discuss the effect of pressure on structures and properties, their relationships and the underlying mechanisms. Finally, we give an outlook on future research avenues in which high pressure and related alternative methods such as chemical tailoring and interfacial engineering may lead to novel hybrid perovskites uniquely suited for high-performance energy applications.