Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers

Ag Nanoparticles-Induced Metallic Conductivity in Thin Films of 2D Metal-Organic Framework Cu3(HHTP)2

Two-dimensional (2D) metal-organic frameworks (MOFs) are usually associated with higher electrical conductivity and charge carrier mobility when compared with 3D MOFs. However, attaining metallic conduction in such systems through synthetic or postsynthetic modifications is extremely challenging. Herein, we present the fabrication of thin films of a 2D MOF, Cu3(HHTP)2 (HHTP = 2,3,6,7,10,11-hexahydroxytriphenylene), decorated with silver nanoparticles (AgNPs) exhibiting significant conductivity enhancement at room temperature. Variable-temperature electrical transport measurements across the low-temperature (200 K) to high-temperature (373 K) regime evidenced metallic conduction. Interestingly, thin films of a 3D MOF, CuTCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane), upon decoration with AgNPs, disclosed a converse trend. The origin of such distinctive observations on AgNPs@Cu3(HHTP)2 and AgNPs@CuTCNQ systems was comprehended by using first-principles density functional theory (DFT) calculations and attributed to an interfacial electronic effect. Our work sheds new light on rationally designing synthetic modifications in thin films of MOFs to tune the electrical transport property.

Insulator-to-metal-like transition in thin films of a biological metal-organic framework

Temperature-induced insulator-to-metal transitions (IMTs) where the electrical resistivity can be altered by over tens of orders of magnitude are most often accompanied by structural phase transition in the system. Here, we demonstrate an insulator-to-metal-like transition (IMLT) at 333 K in thin films of a biological metal-organic framework (bio-MOF) which was generated upon an extended coordination of the cystine (dimer of amino acid cysteine) ligand with cupric ion (spin-1/2 system) - without appreciable change in the structure. Bio-MOFs are crystalline porous solids and a subclass of conventional MOFs where physiological functionalities of bio-molecular ligands along with the structural diversity can primarily be utilized for various biomedical applications. MOFs are usually electrical insulators (so as our expectation with bio-MOFs) and can be bestowed with reasonable electrical conductivity by the design. This discovery of electronically driven IMLT opens new opportunities for bio-MOFs, to emerge as strongly correlated reticular materials with thin film device functionalities.

Metal-Organic Frameworks-Based Memristors: Materials, Devices, and Applications

Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.

Refining the Negative Differential Resistance Effect in a TiOx-Based Memristor

The N-type negative difference resistance (NDR) is characterized by the peak/valley voltage (V_p/V_v) and the corresponding current (I_p/I_v). The N-type NDR is observed in the resistive switching (RS) memory device of Ag|TiO₂|F-doped SnO₂ at room temperature. After the TiO₂ film is equipped with a nanoporous array, the ∼1.2 V gap voltage between V_p and V_v is effectively downscaled to ∼0.5 V, and the gap current of ∼7.23 mA between I_p and I_v is improved to ∼30 mA. It demonstrates that a lower power consumption and faster switching time of the NDR can be obtained in the memristor. Compensations and synergies among the nanoscale conduction filaments (OH^-, Ag⁺, and V_o) are responsible for the refining NDR behavior in our devices. This work provides an efficient method to construct a high-performance N-type NDR effect at room temperature and gives a new horizon on the coexistence of this type of NDR effect and RS memory behaviors.

Direct Layer-by-Layer Growth of Crystalline Ag-TCNQ Thin Films on Functionalized Au Substrate: How Critical Is the pH of Ag(I) Solution?

Wet-chemical fabrication of a crystalline Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane) thin film on non-Ag substrate is challenging whereby the chemistry was powered by photon energy and/or electrical energy. We report for the first time, direct chemical growth of a Ag-TCNQ thin film on a functionalized Au substrate by employing the layer-by-layer (LbL) approach at ambient reaction conditions. Various Ag(I) salt precursors previously realized to be unsuitable for the fabrication of Ag-TCNQ thin films on non-Ag substrates ultimately gave rise to dense and uniform thin films of Ag-TCNQ. The crucial knob regulating the direct formation of the thin films of Ag-TCNQ was identified to be the pH of the respective Ag(I) solutions.

Rationally Designed Semiconducting 2D Surface-Confined Metal-Organic Network

Two-dimensional (2D) surface-confined metal-organic networks (SMONs) are metal-doped self-assembled monolayers of molecules on solid surfaces. We report the formation of uniform large-area solution-processed semiconducting SMONs of Pd and Zn with mellitic acid (MA) on a highly oriented pyrolytic graphite (HOPG) surface under ambient conditions. The microscopic structure is determined using scanning tunneling microscopy (STM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Using tunneling spectroscopy, we observed a reduction in the band gap of ≈900 and ≈300 meV for MA-Pd and MA-Zn SMONs, respectively, compared to the pure MA assembly. Concomitant density functional theory (DFT) calculations reveal that the coordination geometry and microscopic arrangement give rise to the observed reduction in the band gap. The dispersion of the frontier bands and their delocalization due to strong electronic coupling (between MA and metal) suggest that the MA-Pd SMON could potentially be a 2D electronic material.

Emergent Interface in Heterostructured Thin Films of Cu(II) and Cu(I) Coordination Polymers

In this work we report fabrication of high-quality AB- and BA-type heterostructured thin films of cubic Cu(II) (A-type) and tetragonal Cu(I) (B-type) coordination polymers (CPs) on the functionalized Au substrate by the layer-by-layer method. Successful growth of Cu(I)-CP on top of Cu(II)-CP was assigned to be due to the interfacial reduction reaction (IRR). Notably, electrical transport measurements across AB- and BA-type heterostructured thin films revealed rectification of current in opposite directions. We have attributed such an interestingly new observation to the formation of a well-defined interface of Cu(II)-CP and Cu(I)-CP resembling a p-n junction-a hitherto unreported phenomenon that is anticipated to open enormous opportunities for the heterostructured thin films of CPs, likewise celebrated interfaces of oxide heterostructures.

Logic Gate Functions Built with Nonvolatile Resistive Switching and Thermoresponsive Memory Based on Biologic Proteins

Logic gate functions built with nonvolatile resistive switching and thermoresponsive memory based on biologic proteins were investigated. The "NAND" and "NOR" functions of logic gates in soya protein devices have been built at room temperature by their nonvolatile ternary WORM resistive switching behaviors. Furthermore, heating the devices from room temperature to 358 K results in a switch from tristable state to bistable state WORM resistive switching behavior, indicating that the thermoresponsiveness can be efficiently memorized. The biologic transient nonvolatile memory device consisting of soya protein is illustrated. This device exhibits a long data retention time (104 s) and significant HRS/LRS ratio (∼105); the transient response of the current to voltage of an as-fabricated device is also explored. The soya protein based memory device on a gelatin film substrate is also assessed to validate the feasibility of degradation and biological compatibility for the implantable biological electronic device, that is, innoxious and avirulent to the human body. This can offer alternative avenues for exploring prospective bioelectronic devices.

Achieving current rectification ratios ≥ 105 across thin films of coordination polymer

A record value of the current rectification ratio (RR ≥ 10⁵) across molecularly doped thin films of a Cu(ii)-coordination polymer is achieved.

Downsizing coordination polymers (CPs) to thin film configurations is a prerequisite for device applications. However, fabrication of thin films of CPs including metal–organic frameworks (MOFs) with reasonable electrical conductivity is challenging. Herein, thin film fabrication of a Cu(ii)-CP employing a layer-by-layer method is demonstrated whereby a self-assembled monolayer on Au was used as the functionalized substrate. Growth of the Cu(ii)-CP at the solid–liquid interface generated open-metal Cu(ii) sites in the thin film which were susceptible to activation by molecular dopant molecules. A significant enhancement in in-plane electrical conductivity and an unheralded cross-plane current rectification ratio (exceeding 10⁵ both at room-temperature and at an elevated temperature) were achieved. Such a remarkable rectification ratio was realized, similar to those of commercial Si rectifier diodes. This phenomenon is attributed to the formation of an electronic heterostructure in the molecularly doped thin film. Molecular doping additionally transformed the interfacial properties of thin films from hydrophilic to highly hydrophobic.

Perspective on the Interfacial Reduction Reaction

Chemical reactions involving oxidation and reduction processes at interfaces may vary from those in conventional liquid-phase or solid-phase reactions and could influence the overall outcome. This article primarily features a study on metal-ligand coordination at the solid-liquid interface. Of particular mention is the spontaneous reduction of Cu(II) to Cu(I) at a solid-liquid interface without the need of any extraneous reducing agent, unlike in the liquid-phase reaction whereby no reduction of Cu(II) to Cu(I) took place. As a consequence of the interfacial reduction reaction (IRR), thin films of Cu-TCNQ (tetracyanoquinodimethane) and Cu-HCF (hexacyanoferrate) were successfully deposited onto a thiol-functionalized Au substrate via a layer-by-layer (LbL) method. IRR is anticipated to be useful in generating new functional and stimuli-responsive materials, which are otherwise difficult to achieve via conventional liquid-phase reactions.

Spontaneous Reduction of Copper(II) to Copper(I) at Solid-Liquid Interface

Oxidation and reduction reactions are of central importance in chemistry as well as vital to the basic functions of life and such chemical processes are generally brought about by oxidizing and reducing agents, respectively. Herein, we report the discovery of an interfacial reduction reaction (IRR) - without the use of any external reducing agent. In course of metal-ligand coordination, spontaneous reduction of Cu(II) to Cu(I) at a solid-liquid interface was observed-unlike in a liquid-phase reaction where no reduction of Cu(II) to Cu(I) was occurred. High-quality thin films of a new coordination network compound bearing a Fe(II)-CN-Cu(I) link were fabricated by IRR and employed for efficient electro-catalysis in the form of oxygen reduction reaction. Also, thermally activated reversible structural phase transition modulated the electron transport property in thin film. This work unveils the importance of chemical reactions at solid-liquid interfaces that can lead to the development of new functional thin film materials.