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Wang Z, Han X, Liang Y. Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH. Phys Chem Chem Phys 2024; 26:17148-17154. [PMID: 38847342 DOI: 10.1039/d4cp01533a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
The investigation and manipulation of valley pseudospin in promising two-dimensional (2D) semiconductors are essential for accelerating the development of valleytronics. Based on first-principles, we herein report that the WSeNH monolayer is a potential 2D valleytronic material. It is found that stable 2D WSeNH exhibits a semiconducting character with broken inversion symmetry, forming a pair of energy-degenerate but inequivalent valleys at the K and K' points. Arising from the strong spin-orbit coupling strength governed by the W-dxy/dx2-y2 orbitals, it exhibits a large valley splitting of 425 meV at the top of the valence band, which makes it highly plausible for generating the attractive valley Hall effect. Moreover, both valley splitting and optical transition energy can be efficiently modulated by external strain. Furthermore, we find that a considerable valley polarization of 23 meV can be readily realized in 2D WSeNH by introducing hydrogen vacancies. These findings not only broaden the family of 2D valleytronic materials but also provide alternative avenues for valley manipulation.
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Affiliation(s)
- Ziqi Wang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
| | - Xuening Han
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
| | - Yan Liang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
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2
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Xu Y, Wang S, Yu S, Wang X, Huang B, Dai Y, Wei W. Spontaneous Valley Polarization in a Ferromagnetic Fe(OH) 2 Monolayer. J Phys Chem Lett 2022; 13:11543-11550. [PMID: 36475700 DOI: 10.1021/acs.jpclett.2c03177] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
At present, creating sizable spontaneous valley polarization is at the center of the study of valleytronics, which, however, is still a huge challenge. In this work, we determined that the ferromagnetic Fe(OH)2 monolayer of the hexagonal lattice is a highly appealing candidate for valleytronics by using first-principles calculations in conjunction with tight-binding model analysis. In light of the simultaneous inversion symmetry breaking and time-reversal symmetry breaking, we illustrated that the strong spin-orbit coupling and robust ferromagnetic exchange interaction cause a spontaneous valley polarization as large as 67 meV for Fe(OH)2, indicative of room-temperature application. In addition, the physics of valley-selective circular dichroism, spin/valley Hall effects, and topological phase transition were also discussed.
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Affiliation(s)
- Yushuo Xu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Shuhua Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Xinxin Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
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Goel N, Kushwaha A, Kumar M. Two-dimensional MXenes: recent emerging applications. RSC Adv 2022; 12:25172-25193. [PMID: 36199310 PMCID: PMC9443681 DOI: 10.1039/d2ra04354h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Accepted: 08/25/2022] [Indexed: 11/25/2022] Open
Abstract
MXenes, are a rapidly growing family of two-dimensional materials exhibiting outstanding electronic, optical, mechanical, and thermal properties with versatile transition metal and surface chemistries. A wide range of transition metals and surface termination groups facilitate the properties of MXenes to be easily tuneable. Due to the physically strong and environmentally stable nature of MXenes, they have already had a strong presence in different fields, for instance energy storage, electrocatalysis, water purification, and chemical sensing. Some of the newly discovered applications of MXenes showed very promising results, however, they have not been covered in any review article. Therefore, in this review we comprehensively review the recent advancements of MXenes in various potential fields including energy conversion and storage, wearable flexible electronic devices, chemical detection, and biomedical engineering. We have also presented some of the most exciting prospects by combining MXenes with other materials and forming mixed dimensional high performance heterostructures based novel electronic devices.
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Affiliation(s)
- Neeraj Goel
- Department of Electronics and Communication Engineering, Netaji Subhas University of Technology Dwarka 110078 New Delhi India
| | - Aditya Kushwaha
- Department of Electronics and Communication Engineering, Netaji Subhas University of Technology Dwarka 110078 New Delhi India
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur Jodhpur 342011 India
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Zhang S, Wang Y, Wang S, Huang B, Dai Y, Wei W. Electronic Properties of Monolayer and van der Waals Bilayer of Janus TiClI. J Phys Chem Lett 2021; 12:2245-2251. [PMID: 33635653 DOI: 10.1021/acs.jpclett.1c00149] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this work, the novel electronic properties of the Janus TiClI monolayer (ML) and van der Waals (vdW) bilayers (BLs) have been demonstrated. As a result of the strong spin-orbit coupling (SOC) together with the inversion symmetry breaking, the TiClI ML shows valley spin splitting of 62.67 meV at the K/K' point. In magnetic V- and Cr-doped TiClI MLs, sizable valley polarization of 36.70 and 45.35 meV occurs, respectively. TiClI vdW BLs indicate typical type-II band alignment with a quite large band offset (>500 meV), and interestingly, the interlayer-polarization PH is almost 100% for all considered stacking orders. In addition, the interlayer-polarization is insensitive to the interlayer distance. In this situation, the interlayer exciton and valley polarization lifetimes could be prolonged, and thus, TiClI vdW BLs provide new opportunities for light-energy conversion and valleytronics. As the interlayer distance decreases, the TiClI BLs of AB' and AB stacking indicate a semiconductor-to-metal transition and are characterized by hole-doping, and the doping concentration can be further tuned by changing the interlayer distance.
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Affiliation(s)
- Shuhui Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shuhua Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Wang CT, Du S. A unique pentagonal network structure of the NiS2 monolayer with high stability and a tunable bandgap. Phys Chem Chem Phys 2020; 22:7483-7488. [DOI: 10.1039/d0cp00434k] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The NiS2 monolayer with an intriguing pentagonal ring network is stable up to 500 K based on density functional theory calculations.
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Affiliation(s)
- Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
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Wang Y, Wei W, Wang H, Mao N, Li F, Huang B, Dai Y. Janus TiXY Monolayers with Tunable Berry Curvature. J Phys Chem Lett 2019; 10:7426-7432. [PMID: 31722532 DOI: 10.1021/acs.jpclett.9b02853] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Up to now, two-dimensional (2D) materials with both valley polarization and the Rashba effect are still rare. In this work, a new kind of Janus monolayers TiXY (X ≠ Y, X/Y = Cl, Br, I) is demonstrated to have physical properties of benefit for spintronics and valleytronics. In particular, Janus TiBrI shows Zeeman-type spin splitting of 70 meV, large Berry curvature of 106.22 bohr2, and, at the same time, a large Rashba parameter of 147.95 meV Å. On the basis of k·p perturbation theory, we proposed that the Berry curvature can be adjusted by changing the lattice parameter, which will greatly improve the transverse velocities of carriers and promote the efficiency of the valley Hall device. Biaxial strain from -2.5 to 2.5% was applied on Janus TiBrI to verify the theory mentioned above, and a general relationship between the Berry curvature and lattice constant was obtained.
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Affiliation(s)
- Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Hao Wang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Ning Mao
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Fengping Li
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
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Li F, Wei W, Wang H, Huang B, Dai Y, Jacob T. Intrinsic Electric Field-Induced Properties in Janus MoSSe van der Waals Structures. J Phys Chem Lett 2019; 10:559-565. [PMID: 30658531 DOI: 10.1021/acs.jpclett.8b03463] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Focusing on two-dimensional (2D) Janus MoSSe monolayers, we show that simultaneously existing in-plane and out-of-plane intrinsic electric fields cause Zeeman- and Rashba-type spin splitting, respectively. In MoSSe van der Waals (vdW) structures, intrinsic electric field results in a large interlayer band offset. Therefore, large interlayer band offset, being the driving force for interlayer excitons, endows ultralong lifetimes to excitons and might dissociate excitons into free carriers. In comparison to its parent structure (i.e., MoS2), MoSSe vdW structures are rather appealing for new concepts in light-electricity interconversion. In addition, the Rashba effects could be tuned by changing the interlayer distances due to the competition between the intralayer and interlayer electric field. Due to the large band offset, valley polarization relaxation is markedly reduced, promising enhanced valley polarization and ultralong valley lifetimes. As a result, MoSSe vdW structures harbor strong valley-contrasting physics, making them competitive systems to their parent structures.
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Affiliation(s)
- Fengping Li
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Hao Wang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China
| | - Timo Jacob
- Institute of Electrochemistry , Ulm University , Albert-Einstein-Allee 47 , D-89081 Ulm , Germany
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Pang J, Mendes RG, Bachmatiuk A, Zhao L, Ta HQ, Gemming T, Liu H, Liu Z, Rummeli MH. Applications of 2D MXenes in energy conversion and storage systems. Chem Soc Rev 2019; 48:72-133. [DOI: 10.1039/c8cs00324f] [Citation(s) in RCA: 978] [Impact Index Per Article: 195.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
This article provides a comprehensive review of MXene materials and their energy-related applications.
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Affiliation(s)
- Jinbo Pang
- The Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden)
- Dresden
- Germany
- Institute for Advanced Interdisciplinary Research (iAIR)
- University of Jinan
| | - Rafael G. Mendes
- The Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden)
- Dresden
- Germany
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
| | - Alicja Bachmatiuk
- The Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden)
- Dresden
- Germany
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
| | - Liang Zhao
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
- School of Energy
- Soochow University
- Suzhou
| | - Huy Q. Ta
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
- School of Energy
- Soochow University
- Suzhou
| | - Thomas Gemming
- The Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden)
- Dresden
- Germany
| | - Hong Liu
- Institute for Advanced Interdisciplinary Research (iAIR)
- University of Jinan
- Jinan 250022
- China
- State Key Laboratory of Crystal Materials
| | - Zhongfan Liu
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
- School of Energy
- Soochow University
- Suzhou
| | - Mark H. Rummeli
- The Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden)
- Dresden
- Germany
- Soochow Institute for Energy and Materials InnovationS (SIEMIS)
- Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province
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