Unraveling the Charge Extraction Mechanism of Perovskite Solar Cells Fabricated with Two-Step Spin Coating: Interfacial Energetics between Methylammonium Lead Iodide and C60

Visualizing the Low-Energy Electronic Structure of Prototypical Hybrid Halide Perovskite through Clear Band Measurements

Organic-inorganic hybrid perovskites (OIHPs) are a promising class of materials that rival conventional semiconductors in various optoelectronic applications. However, unraveling the precise nature of their low-energy electronic structures continues to pose a significant challenge, primarily due to the absence of clear band measurements. Here, we investigate the low-energy electronic structure of CH3NH3PbI3 (MAPI3) using angle-resolved photoelectron spectroscopy combined with ab initio density functional theory. We successfully visualize the electronic structure of MAPI3 near the bulk valence band maximum by using a laboratory photon source (He Iα, 21.2 eV) at low temperature and explore its fundamental properties. The observed valence band exhibits a highly isotropic and parabolic band characterized by small effective masses of 0.20-0.21 me, without notable spectral signatures associated with a large polaron or the Rashba effect, subjects that are intensely debated in the literature. Concurrently, our spin-resolved measurements directly disprove the giant Rashba scenario previously suggested in a similar perovskite compound by establishing an upper limit for the Rashba parameter (αR) of 0.28 eV Å. Our results unveil the unusually complex nature of the low-energy electronic structure of OIHPs, thereby advancing our fundamental understanding of this important class of materials.

Photoinduced Energy-Level Realignment at Interfaces between Organic Semiconductors and Metal-Halide Perovskites

In contrast to the common conception that the interfacial energy-level alignment is affixed once the interface is formed, we demonstrate that heterojunctions between organic semiconductors and metal-halide perovskites exhibit huge energy-level realignment during photoexcitation. Importantly, the photoinduced level shifts occur in the organic component, including the first molecular layer in direct contact with the perovskite. This is caused by charge-carrier accumulation within the organic semiconductor under illumination and the weak electronic coupling between the junction components.

Density of gap states in CH3NH3PbI3single crystals probed with ultrahigh-sensitivity ultraviolet photoelectron spectroscopy

The advantages of methylammonium triiodideplumbate (CH₃NH₃PbI₃)-based organic-inorganic hybrid halide perovskite have led to devices with power conversion efficiencies of >20%. The CH₃NH₃PbI₃structure is prone to be more sensitive towards external effects due to its higher flexibility than inorganic counterparts. Nevertheless, a direct photoemission spectroscopy study is still lacking on the density of gap states (DOGS) influenced by air exposure and synchrotron light-induced degradation. In this paper, we investigate the evolution of electronic structure in CH₃NH₃PbI₃single crystals after air exposure and intense synchrotron light irradiation to reveal the effects on its density of states distribution below and above the valence band maximum (VBM) by using ultrahigh-sensitivity photoelectron spectroscopy. We find that the PbI₂compounds, decomposed from CH₃NH₃PbI₃after air exposure, could not affect the DOGS distribution but only give the VBM shift in the high binding energy region, which is dramatically different from the impacts of an impurity found for other organic or inorganic counterparts. A further study using intense synchrotron irradiation confirms the decomposed processes for CH₃NH₃PbI₃: (i) the initial degradation would induce the formation of PbI₂, which gives a negligible impact on the DOGS above the VBM; (ii) the continuous intense light irradiation could further degrade PbI₂to metallic Pb, in which DOGS appears in the energy bandgap.

Mechanism and Timescales of Reversible p-Doping of Methylammonium Lead Triiodide by Oxygen

Understanding and controlling the energy level alignment at interfaces with metal halide perovskites (MHPs) is essential for realizing the full potential of these materials for use in optoelectronic devices. To date, however, the basic electronic properties of MHPs are still under debate. Particularly, reported Fermi level positions in the energy gap vary from indicating strong n- to strong p-type character for nominally identical materials, raising serious questions about intrinsic and extrinsic defects as dopants. ​In this work, photoemission experiments demonstrate that thin films of the prototypical methylammonium lead triiodide (MAPbI3 ) behave like an intrinsic semiconductor in the absence of oxygen. Oxygen is then shown to be able to reversibly diffuse into and out of the MAPbI3 bulk, requiring rather long saturation timescales of ≈1 h (in: ambient air) and over 10 h (out: ultrahigh vacuum), for few 100 nm thick films. Oxygen in the bulk leads to pronounced p-doping, positioning the Fermi level universally ≈0.55 eV above the valence band maximum. The key doping mechanism is suggested to be molecular oxygen substitution of iodine vacancies, supported by density functional theory calculations. This insight rationalizes previous and future electronic property studies of MHPs and calls for meticulous oxygen exposure protocols.

Surface Termination of Solution-Processed CH3NH3PbI3 Perovskite Film Examined using Electron Spectroscopies

The interfaces of a perovskite solar cell significantly influence the charge processes in the cell, which contributes to the device performance with direct implication for surface potential, electronic structure, and chemical reactivity. The properties of the interface are strongly affected by the surface termination. In this work, the combination of ultraviolet photoelectron spectroscopy (UPS) and metastable-atom electron spectroscopy is demonstrated, to examine the surface termination of a solution-processed CH₃NH₃PbI₃ perovskite film. The results show that the surface of the CH₃NH₃PbI₃ perovskite film is terminated with a layer consisting of CH₃NH₃ and I. The interface energy level alignment for both occupied and unoccupied levels between CH₃NH₃PbI₃ and C60 is also examined using UPS and low-energy inverse photoelectron spectroscopy. It turns out that an ideal energy level alignment is established for the electron collection and hole block at the perovskite and C60 interface.

Influence of Surface Ligands on Energetics at FASnI3/C60 Interfaces and Their Impact on Photovoltaic Performance

Interfacial chemistry and energetics significantly impact the performance of photovoltaic devices. In the case of Pb-containing organic metal halide perovskites, photoelectron spectroscopy has been used to determine the energetic alignment of frontier electronic energy levels at various interfaces present in the photovoltaic device. For the Sn-containing analogues, which are less toxic, no such measurements have been made. Through a combination of ultraviolet, inverse, and X-ray photoelectron spectroscopy (UPS, IPES, and XPS, respectively) measurements taken at varying thickness increments during stepwise deposition of C₆₀ on FASnI₃, we present the first direct measurements of the frontier electronic energy levels across the FASnI₃/C₆₀ interface. The results show band bending in both materials and transport gap widening in FASnI₃ at the interface with C₆₀. The XPS results show that iodide diffuses into C₆₀ and results in n-doping of C₆₀. This iodide diffusion out of FASnI₃ impacts the valence and conduction band energies of FASnI₃ more than the core levels, with the core level shifts displaying a different trend than the valence and conduction bands. Surface treatment of FASnI₃ with carboxylic acids and bulky ammonium substituted surface ligands results in slight alterations in the interfacial energetics, and all surface ligands result in similar or improved PV performance relative to the untreated devices. The greatest PV stability results from treatment with a fluorinated carboxylic acid derivative; however, iodide diffusion is still observed to occur with this surface ligand.

Effective Control of Chlorine Contents in MAPbI3- xCl x Perovskite Solar Cells Using a Single-Source Vapor Deposition and Anion-Exchange Technique

In this study, a new method is developed to control the Cl-to-I ratio in MAPbI_{3- x}Cl _x perovskite solar cells (PSCs) more easily and precisely using single-source vapor deposition of MAPbCl₃ thin films and a subsequent anion exchange by repeated spin-coatings of methylammonium iodide (MAI) solution. This method can overcome the problems of previous vapor-deposition techniques for PSCs such as the occurrence of morphological defects in the films and difficulty in controlling the stoichiometry of the elements. The repetitive MAI treatments gradually fill the interstitial voids in the perovskite film and increase the average grain size up to 1.2 μm, which improves the charge-transfer property of the cells. The atomic Cl content, i.e., the x value, of the MAPbI_{3- x}Cl _x film can also be simply controlled by changing the number of MAI treatments. The energy levels and resistive elements of the cells are strongly dependent on the x value of the MAPbI_{3- x}Cl _x film. A maximum power conversion efficiency of 19.1% is achieved at x = 0.005.

Electronic Structure of Nonionic Surfactant-Modified PEDOT:PSS and Its Application in Perovskite Solar Cells with Reduced Interface Recombination

The interfacial properties of organolead halide perovskite solar cells (PSCs) affect the exciton and charge-transport dynamics significantly. Thus, proper modification of the interfaces between perovskite and charge-transport layers is an efficient method to increase the power conversion efficiency (PCE) of PSCs. In this work, we explore the effect of a nonionic surfactant, that is, Triton X-100 (TX) additive, in the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) hole-transport layer. The electronic structure of TX-modified PEDOT:PSS is investigated with ultraviolet/X-ray photoelectron spectroscopy and X-ray absorption spectroscopy with various TX concentrations. The surface of the TX-modified PEDOT:PSS layer showed high TX content, and thus the semimetallic properties of PEDOT:PSS were suppressed conspicuously by its insulating nature. With the TX-modified PEDOT:PSS, the PCE of methylammonium lead iodide (MAPbI₃) PSCs increased significantly. To elucidate the origin of the improved device performance, the electrical properties and photoluminescence were investigated comprehensively. Consequently, it was found that the TX additive inhibits interface recombination between PEDOT:PSS and MAPbI₃, which is caused by the suppression of semimetallic properties of the PEDOT:PSS surface. Hence, we fabricated flexible PSCs successfully using a graphene electrode and TX-modified PEDOT:PSS.

Halide Perovskites: Is It All about the Interfaces?

Design and modification of interfaces, always a critical issue for semiconductor devices, has become a primary tool to harness the full potential of halide perovskite (HaP)-based optoelectronics, including photovoltaics and light-emitting diodes. In particular, the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review, we describe the unique challenges and opportunities of these approaches (section 1). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surfaces, including topics such as surface termination, surface reactivity, and electronic structure (section 2). This is followed by discussing experimental results on the energetic alignment processes at the interfaces between the HaP and transport and buffer layers. This section includes understandings reached as well as commonly proposed and applied models, especially the often-questionable validity of vacuum level alignment, the importance of interface dipoles, and band bending as the result of interface formation (section 3). We follow this by elaborating on the impact of the interface formation on device performance, considering effects such as chemical reactions and surface passivation on interface energetics and stability. On the basis of these concepts, we propose a roadmap for the next steps in interfacial design for HaP semiconductors (section 4), emphasizing the importance of achieving control over the interface energetics and chemistry (i.e., reactivity) to allow predictive power for tailored interface optimization.

Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurements

Photovoltaic cells based on halide perovskites, possessing remarkably high power conversion efficiencies have been reported. To push the development of such devices further, a comprehensive and reliable understanding of their electronic properties is essential but presently not available. To provide a solid foundation for understanding the electronic properties of polycrystalline thin films, we employ single-crystal band structure data from angle-resolved photoemission measurements. For two prototypical perovskites (CH₃NH₃PbBr₃ and CH₃NH₃PbI₃), we reveal the band dispersion in two high-symmetry directions and identify the global valence band maxima. With these benchmark data, we construct "standard" photoemission spectra from polycrystalline thin film samples and resolve challenges discussed in the literature for determining the valence band onset with high reliability. Within the framework laid out here, the consistency of relating the energy level alignment in perovskite-based photovoltaic and optoelectronic devices with their functional parameters is substantially enhanced.

Depth-dependent electronic band structure at the Au/CH3NH3PbI3−xClx junction

The electronic properties of the interface between Au and the lead halide perovskite (CH₃NH₃PbI_3−xCl_x) were investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).