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Hossain MI, Chelvanathan P, Khandakar A, Thomas K, Rahman A, Mansour S. Enhanced efficiency of bifacial perovskite solar cells using computational study. Sci Rep 2024; 14:12984. [PMID: 38839768 PMCID: PMC11153638 DOI: 10.1038/s41598-024-62487-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Accepted: 05/17/2024] [Indexed: 06/07/2024] Open
Abstract
The most rapidly expanding type of solar cells are the Perovskite Solar Cells (PSCs), because of its high device performance, ease of synthesis, high open-circuit voltage, and affordability. Despite these advantages, the development of perovskite-based solar cells continues to be impeded by the issues with perovskite stability and the utilization of the hazardous heavy element lead (Pb). The study emphasizes on the bifacial structure that maintains the conventional absorber layer and electron transport layer (ETL) in the optimized PSC structure. This study employs SCAPS software for device simulation to comprehensively analyze how various parameters affect the performance of solar cells. Additionally, doping concentration variation in both ETL and HTL are explored. The simulation reveals that changing device structure from monofacial to bifacial significantly influences PSC performance, demonstrating that optimizing individual layers effectively enhances overall solar cell performance. The optimized structure achieves impressive PSC performance metrics through parametric analysis, such as voltage (VOC) of 1.18 V, fill factor (FF) of 82.24%, current density (JSC) of 27.12 mA/cm2, power conversion efficiency (PCE) of 27.90% for an incident solar spectrum from the ETL side, and power conversion efficiency (PCE) of 19.86% for an incident solar spectrum from the HTL side, the calculated bifaciality factor (BF) for this structure is 71.18%.
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Affiliation(s)
| | | | - Amith Khandakar
- Department of Electrical Engineering, College of Engineering, Qatar University, Doha, Qatar.
| | - Kevin Thomas
- Department of Electrical Engineering, College of Engineering, Qatar University, Doha, Qatar
| | - Ahasanur Rahman
- Department of Electrical Engineering, College of Engineering, Qatar University, Doha, Qatar
| | - Said Mansour
- HBKU Core Labs, Hamad Bin Khalifa University (HBKU), Qatar Foundation, Doha, Qatar
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2
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Mehra S, Pandey R, Madan J, Sharma R, Goswami L, Gupta G, Singh VN, Srivastava AK, Sharma SN. Experimental and Theoretical Investigations of MAPbX 3 -Based Perovskites (X=Cl, Br, I) for Photovoltaic Applications. ChemistryOpen 2024; 13:e202300055. [PMID: 37874015 PMCID: PMC10962479 DOI: 10.1002/open.202300055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 09/22/2023] [Indexed: 10/25/2023] Open
Abstract
This work mainly focuses on synthesizing and evaluating the efficiency of methylammonium lead halide-based perovskite (MAPbX3 ; X=Cl, Br, I) solar cells. We used the colloidal Hot-injection method (HIM) to synthesize MAPbX3 (X=Cl, Br, I) perovskites using the specific precursors and organic solvents under ambient conditions. We studied the structural, morphological and optical properties of MAPbX3 perovskites using XRD, FESEM, TEM, UV-Vis, PL and TRPL (time-resolved photoluminescence) characterization techniques. The particle size and morphology of these perovskites vary with respect to the halide variation. The MAPbI3 perovskite possesses a low band gap and low carrier lifetime but delivers the highest PCE among other halide perovskite samples, making it a promising candidate for solar cell technology. To further enrich the investigations, the conversion efficiency of the MAPbX3 perovskites has been evaluated through extensive device simulations. Here, the optical constants, band gap energy and carrier lifetime of MAPbX3 were used for simulating three different perovskite solar cells, namely I, Cl or Br halide-based perovskite solar cells. MAPbI3 , MAPbBr3 and MAPbCl3 absorber layer-based devices showed ~13.7 %, 6.9 % and 5.0 % conversion efficiency. The correlation between the experimental and SCAPS simulation data for HIM-synthesized MAPBX3 -based perovskites has been reported for the first time.
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Affiliation(s)
- Sonali Mehra
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
- AcSIR–Academy of Scientific and Innovative ResearchGhaziabadIndia201002
| | - Rahul Pandey
- VLSI Centre of ExcellenceChitkara University Institute of Engineering and TechnologyChitkara UniversityPunjabIndia
| | - Jaya Madan
- VLSI Centre of ExcellenceChitkara University Institute of Engineering and TechnologyChitkara UniversityPunjabIndia
| | - Rajnish Sharma
- VLSI Centre of ExcellenceChitkara University Institute of Engineering and TechnologyChitkara UniversityPunjabIndia
| | - Lalit Goswami
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
| | - Govind Gupta
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
- AcSIR–Academy of Scientific and Innovative ResearchGhaziabadIndia201002
| | - Vidya Nand Singh
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
- AcSIR–Academy of Scientific and Innovative ResearchGhaziabadIndia201002
| | - Avanish Kumar Srivastava
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
- CSIR–Advanced Materials and Processes Research InstituteBhopalMadhya PradeshIndia462026
| | - Shailesh Narain Sharma
- CSIR–National Physical LaboratoryDr K. S. Krishann RoadNew DelhiIndia110012
- AcSIR–Academy of Scientific and Innovative ResearchGhaziabadIndia201002
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3
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Dong J, Liu H, Cao Z, Liu Y, Bai Y, Chen M, Liu B, Wu L, Luo J, Zhang Y, Liu SF. Low-Cost Antimony Selenosulfide with Tunable Bandgap for Highly Efficient Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206175. [PMID: 36534834 DOI: 10.1002/smll.202206175] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2022] [Revised: 11/18/2022] [Indexed: 06/17/2023]
Abstract
About 10% efficient antimony selenosulfide (Sb2 (S,Se)3 ) solar cell is realized by using selenourea as a hydrothermal raw material to prepare absorber layers. However, tailoring the bandgap of hydrothermal-based Sb2 (S,Se)3 film to the ideal bandgap (1.3-1.4 eV) using the selenourea for optimal efficiency is still a challenge. Moreover, the expensive selenourea dramatically increases the fabricating cost. Here, a straightforward one-step hydrothermal method is developed to prepare high-quality Sb2 (S,Se)3 films using a novel precursor sodium selenosulfate as the selenium source. By tuning the Se/(Se+S) ratio in the hydrothermal precursor solution, a series of high-quality Sb2 (S,Se)3 films with reduced density of deep defect states and tunable bandgap from 1.31 to 1.71 eV is successfully prepared. Consequently, the best efficiency of 10.05% with a high current density of 26.01 mA cm-2 is achieved in 1.35 eV Sb2 (S,Se)3 solar cells. Compared with the traditional method using selenourea, the production cost for the Sb2 (S,Se)3 devices is reduced by over 80%. In addition, the device exhibits outstanding stability, maintaining more than 93% of the initial power conversion efficiency after 30 days of exposure in the atmosphere without encapsulation. The present work definitely paves a facile and effective way to develop low-cost and high-efficiency chalcogenide-based photovoltaic devices.
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Affiliation(s)
- Jiabin Dong
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Huizhen Liu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Zixiu Cao
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Yue Liu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Yuxing Bai
- Key Laboratory of Weak-Light Nonlinear Photonics Ministry of Education, School of Physics, Nankai University, Tianjin, 300071, China
| | - Mohan Chen
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Bei Liu
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Li Wu
- Key Laboratory of Weak-Light Nonlinear Photonics Ministry of Education, School of Physics, Nankai University, Tianjin, 300071, China
| | - Jingshan Luo
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Yi Zhang
- Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin Key Laboratory of Thin Film Devices and Technology, Engineering Research Center of Thin Film optoelectronics Technology, Ministry of Education, Tianjin, 300350, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education Institute for Advanced Energy Materials, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
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4
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Wang S, Zhao Y, Che B, Li C, Chen X, Tang R, Gong J, Wang X, Chen G, Chen T, Li J, Xiao X. A Novel Multi-Sulfur Source Collaborative Chemical Bath Deposition Technology Enables 8%-Efficiency Sb 2 S 3 Planar Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206242. [PMID: 36030361 DOI: 10.1002/adma.202206242] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2022] [Revised: 08/22/2022] [Indexed: 06/15/2023]
Abstract
Sb2 S3 as a light-harvesting material has attracted great attention for applications in both single-junction and tandem solar cells. Such solar cell has been faced with current challenge of low power conversion efficiency (PCE), which has stagnated for 8 years. It has been recognized that the synthesis of high-quality absorber film plays a critical role in efficiency improvement. Here, using fresh precursor materials for antimony (antimony potassium tartrate) and combined sulfur (sodium thiosulfate and thioacetamide), a unique chemical bath deposition procedure is created. Due to the complexation of sodium thiosulfate and the advantageous hydrolysis cooperation between these two sulfur sources, the heterogeneous nucleation and the S2- releasing processes are boosted. As a result, there are noticeable improvements in the deposition rate, film morphology, crystallinity, and preferred orientations. Additionally, the improved film quality efficiently lowers charge trapping capacity, suppresses carrier recombination, and prolongs carrier lifetimes, leading to significantly improved photoelectric properties. Ultimately, the PCE exceeds 8% for the first time since 2014, representing the highest efficiency in all kinds of Sb2 S3 solar cells to date. This study is expected to shed new light on the fabrication of high-quality Sb2 S3 film and further efficiency improvement in Sb2 S3 solar cells.
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Affiliation(s)
- Shaoying Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuqi Zhao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Bo Che
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230026, China
- Hefei National Research Centre for Physical Sciences at Microscale, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, China
| | - Chuang Li
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xueling Chen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Rongfeng Tang
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230026, China
- Hefei National Research Centre for Physical Sciences at Microscale, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, China
| | - Junbo Gong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xiaomin Wang
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronics Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guilin Chen
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350007, China
| | - Tao Chen
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, 230026, China
- Hefei National Research Centre for Physical Sciences at Microscale, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, China
| | - Jianmin Li
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xudong Xiao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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5
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Chan TH, Taylor NT, Sundaram S, Hepplestone SP. Phase Stability and Electronic Properties of Hybrid Organic-Inorganic Perovskite Solid Solution (CH(NH 2) 2) x (CH 3NH 3) 1-x Pb(Br y I 1-y ) 3 as a Function of Composition. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:13640-13648. [PMID: 36017360 PMCID: PMC9393887 DOI: 10.1021/acs.jpcc.2c03555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Revised: 07/10/2022] [Indexed: 06/15/2023]
Abstract
Compositional mixing provides the means to maintain the structural stability of a hybrid organic-inorganic perovskite for efficient and robust photovoltaic applications. Here we present a theoretical, first-principles study of the electronic and energetic properties of the solid solution (CH(NH2)2) x (CH3NH3)1-x PbBr y I1-y , the mixing of two organic molecules with various orientations, formamidinium and methylammonium, and two halides, bromide and iodide. Our results show the variation in the band gap as a function of composition (x and y) provides several candidates that exceed the 27.5% Schockley-Queisser efficiency. The variation in the composition of hybrid perovskite shows specific regions where either the hexagonal or cubic phase dominates. We discuss the balance between the band gap and phase stability and indicate regions where the phase transition temperature between cubic and hexagonal phases is far from room temperature, indicating that these compositions are more robust at room temperature against phase transitions.
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Affiliation(s)
- T. H. Chan
- Department
of Physics and Astronomy, College of Engineering, Mathematics and
Physical Sciences, Streatham Campus, University
of Exeter, Exeter EX4 4QL, U.K.
| | - N. T. Taylor
- Department
of Physics and Astronomy, College of Engineering, Mathematics and
Physical Sciences, Streatham Campus, University
of Exeter, Exeter EX4 4QL, U.K.
| | - S. Sundaram
- The
School of Engineering and the Built Environment, Merchiston Campus, Edinburgh Napier University, Edinburgh EH10 5DT, U.K.
| | - S. P. Hepplestone
- Department
of Physics and Astronomy, College of Engineering, Mathematics and
Physical Sciences, Streatham Campus, University
of Exeter, Exeter EX4 4QL, U.K.
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6
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Bao C, Gao F. Physics of defects in metal halide perovskites. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:096501. [PMID: 35763940 DOI: 10.1088/1361-6633/ac7c7a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2021] [Accepted: 06/28/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskites are widely used in optoelectronic devices, including solar cells, photodetectors, and light-emitting diodes. Defects in this class of low-temperature solution-processed semiconductors play significant roles in the optoelectronic properties and performance of devices based on these semiconductors. Investigating the defect properties provides not only insight into the origin of the outstanding performance of perovskite optoelectronic devices but also guidance for further improvement of performance. Defects in perovskites have been intensely studied. Here, we review the progress in defect-related physics and techniques for perovskites. We survey the theoretical and computational results of the origin and properties of defects in perovskites. The underlying mechanisms, functions, advantages, and limitations of trap state characterization techniques are discussed. We introduce the effect of defects on the performance of perovskite optoelectronic devices, followed by a discussion of the mechanism of defect treatment. Finally, we summarize and present key challenges and opportunities of defects and their role in the further development of perovskite optoelectronic devices.
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Affiliation(s)
- Chunxiong Bao
- Department of Physics, Chemistry, and Biology, Linköping University, Sweden
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, People's Republic of China
| | - Feng Gao
- Department of Physics, Chemistry, and Biology, Linköping University, Sweden
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7
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Tang R, Chen S, Zheng ZH, Su ZH, Luo JT, Fan P, Zhang XH, Tang J, Liang GX. Heterojunction Annealing Enabling Record Open-Circuit Voltage in Antimony Triselenide Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109078. [PMID: 35104384 DOI: 10.1002/adma.202109078] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 01/11/2022] [Indexed: 06/14/2023]
Abstract
Despite the fact that antimony triselenide (Sb2 Se3 ) thin-film solar cells have undergone rapid development in recent years, the large open-circuit voltage (VOC ) deficit still remains as the biggest bottleneck, as even the world-record device suffers from a large VOC deficit of 0.59 V. Here, an effective interface engineering approach is reported where the Sb2 Se3 /CdS heterojunction (HTJ) is subjected to a post-annealing treatment using a rapid thermal process. It is found that nonradiative recombination near the Sb2 Se3 /CdS HTJ, including interface recombination and space charge region recombination, is greatly suppressed after the HTJ annealing treatment. Ultimately, a substrate Sb2 Se3 /CdS thin-film solar cell with a competitive power conversion efficiency of 8.64% and a record VOC of 0.52 V is successfully fabricated. The device exhibits a much mitigated VOC deficit of 0.49 V, which is lower than that of any other reported efficient antimony chalcogenide solar cell.
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Affiliation(s)
- Rong Tang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shuo Chen
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhuang-Hao Zheng
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zheng-Hua Su
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jing-Ting Luo
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xiang-Hua Zhang
- CNRS, ISCR (Institut des Sciences Chimiques de Rennes), UMR 6226, Université de Rennes, Rennes, F-35000, France
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Guang-Xing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
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8
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Liang G, Chen M, Ishaq M, Li X, Tang R, Zheng Z, Su Z, Fan P, Zhang X, Chen S. Crystal Growth Promotion and Defects Healing Enable Minimum Open-Circuit Voltage Deficit in Antimony Selenide Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105142. [PMID: 35088583 PMCID: PMC8948594 DOI: 10.1002/advs.202105142] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 01/12/2022] [Indexed: 05/19/2023]
Abstract
Antimony selenide (Sb2 Se3 ) is an ideal photovoltaic candidate profiting from its advantageous material characteristics and superior optoelectronic properties, and has gained considerable development in recent years. However, the further device efficiency breakthrough is largely plagued by severe open-circuit voltage (VOC ) deficit under the existence of multiple defect states and detrimental recombination loss. In this work, an effective absorber layer growth engineering involved with vapor transport deposition and post-selenization is developed to grow Sb2 Se3 thin films. High-quality Sb2 Se3 with large compact crystal grains, benign [hk1] growth orientation, stoichiometric chemical composition, and suitable direct bandgap are successfully fulfilled under an optimized post-selenization scenario. Planar Sb2 Se3 thin-film solar cells with substrate configuration of Mo/Sb2 Se3 /CdS/ITO/Ag are constructed. By contrast, such engineering effort can remarkably mitigate the device VOC deficit, owing to the healed detrimental defects, the suppressed interface and space-charge region recombination, the prolonged carrier lifetime, and the enhanced charge transport. Accordingly, a minimum VOC deficit of 0.647 V contributes to a record VOC of 0.513 V, a champion device with highly interesting efficiency of 7.40% is also comparable to those state-of-the-art Sb2 Se3 solar cells, paving a bright avenue to broaden its scope of photovoltaic applications.
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Affiliation(s)
- Guangxing Liang
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Mingdong Chen
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Muhammad Ishaq
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Xinru Li
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Rong Tang
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Zhuanghao Zheng
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Zhenghua Su
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Xianghua Zhang
- CNRSISCR (Institut des Sciences Chimiques de Rennes)UMR 6226Université de RennesRennesF‐35000France
| | - Shuo Chen
- Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
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9
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Reducing Defects in Organic-Lead Halide Perovskite Film by Delayed Thermal Annealing Combined with KI/I 2 for Efficient Perovskite Solar Cells. NANOMATERIALS 2021; 11:nano11061607. [PMID: 34207375 PMCID: PMC8234527 DOI: 10.3390/nano11061607] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2021] [Revised: 06/06/2021] [Accepted: 06/14/2021] [Indexed: 11/18/2022]
Abstract
This study improved quality of CH3NH3PbI3 (MAPbI3) perovskite films by delaying thermal annealing in the spin coating process and introducing KI and I2 to prepare MAPbI3 films that were low in defects for high-efficiency perovskite solar cells. The influences of delayed thermal annealing time after coating the MAPbI3 perovskite layer on the crystallized perovskite, the morphology control of MAPbI3 films, and the photoelectric conversion efficiency of solar cells were investigated. The optimal delayed thermal annealing time was found to be 60 min at room temperature. The effect of KI/I2 additives on the growth of MAPbI3 films and the corresponding optimal delayed thermal annealing time were further investigated. The addition of KI/I2 can improve perovskite crystallinity, and the conductivity and carrier mobility of MAPbI3 films. Under optimized conditions, the photoelectric conversion efficiency of MAPbI3 perovskite solar cells can reach 19.36% under standard AM1.5G solar illumination of 100 mW/cm2.
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10
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Kobbekaduwa K, Shrestha S, Adhikari P, Liu E, Coleman L, Zhang J, Shi Y, Zhou Y, Bekenstein Y, Yan F, Rao AM, Tsai H, Beard MC, Nie W, Gao J. In-situ observation of trapped carriers in organic metal halide perovskite films with ultra-fast temporal and ultra-high energetic resolutions. Nat Commun 2021; 12:1636. [PMID: 33712623 PMCID: PMC7954808 DOI: 10.1038/s41467-021-21946-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 02/17/2021] [Indexed: 01/31/2023] Open
Abstract
We in-situ observe the ultrafast dynamics of trapped carriers in organic methyl ammonium lead halide perovskite thin films by ultrafast photocurrent spectroscopy with a sub-25 picosecond time resolution. Upon ultrafast laser excitation, trapped carriers follow a phonon assisted tunneling mechanism and a hopping transport mechanism along ultra-shallow to shallow trap states ranging from 1.72-11.51 millielectronvolts and is demonstrated by time-dependent and independent activation energies. Using temperature as an energetic ruler, we map trap states with ultra-high energy resolution down to < 0.01 millielectronvolt. In addition to carrier mobility of ~4 cm2V-1s-1 and lifetime of ~1 nanosecond, we validate the above transport mechanisms by highlighting trap state dynamics, including trapping rates, de-trapping rates and trap properties, such as trap density, trap levels, and capture-cross sections. In this work we establish a foundation for trap dynamics in high defect-tolerant perovskites with ultra-fast temporal and ultra-high energetic resolution.
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Affiliation(s)
- Kanishka Kobbekaduwa
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
| | - Shreetu Shrestha
- grid.148313.c0000 0004 0428 3079Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, NM USA
| | - Pan Adhikari
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
| | - Exian Liu
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
| | - Lawrence Coleman
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
| | - Jianbing Zhang
- grid.33199.310000 0004 0368 7223School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People’s Republic of China
| | - Ying Shi
- grid.64924.3d0000 0004 1760 5735Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun, People’s Republic of China
| | - Yuanyuan Zhou
- grid.221309.b0000 0004 1764 5980Department of Physics, Hong Kong Baptist University, Kowloon Tong Hong Kong, People’s Republic of China
| | - Yehonadav Bekenstein
- grid.6451.60000000121102151Department of Materials Science and Engineering, Technion, Haifa, Israel
| | - Feng Yan
- grid.411015.00000 0001 0727 7545Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL USA
| | - Apparao M. Rao
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
| | - Hsinhan Tsai
- grid.148313.c0000 0004 0428 3079Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, NM USA
| | - Matthew C. Beard
- grid.419357.d0000 0001 2199 3636National Renewable Energy Laboratory, Golden, CO USA
| | - Wanyi Nie
- grid.148313.c0000 0004 0428 3079Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, NM USA
| | - Jianbo Gao
- grid.26090.3d0000 0001 0665 0280Department of Physics and Astronomy, Ultrafast Photophysics of Quantum Devices Laboratory, Clemson University, Clemson, SC USA
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11
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A universal tactic of using Lewis-base polymer-CNTs composites as additives for high performance cm2-sized and flexible perovskite solar cells. Sci China Chem 2020. [DOI: 10.1007/s11426-020-9866-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
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12
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Wang X, Li Y, Xu Y, Pan Y, Wu Y, Li G, Zhang W, Ding S, Chen J, Lei W, Zhao D. Organometallic perovskite single crystals grown on lattice-matched substrate for photodetection. NANO MATERIALS SCIENCE 2020. [DOI: 10.1016/j.nanoms.2019.10.007] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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13
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14
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Aydin E, De Bastiani M, De Wolf S. Defect and Contact Passivation for Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900428. [PMID: 31062907 DOI: 10.1002/adma.201900428] [Citation(s) in RCA: 144] [Impact Index Per Article: 28.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2019] [Indexed: 05/05/2023]
Abstract
Metal-halide perovskites are rapidly emerging as an important class of photovoltaic absorbers that may enable high-performance solar cells at affordable cost. Thanks to the appealing optoelectronic properties of these materials, tremendous progress has been reported in the last few years in terms of power conversion efficiencies (PCE) of perovskite solar cells (PSCs), now with record values in excess of 24%. Nevertheless, the crystalline lattice of perovskites often includes defects, such as interstitials, vacancies, and impurities; at the grain boundaries and surfaces, dangling bonds can also be present, which all contribute to nonradiative recombination of photo-carriers. On device level, such recombination undesirably inflates the open-circuit voltage deficit, acting thus as a significant roadblock toward the theoretical efficiency limit of 30%. Herein, the focus is on the origin of the various voltage-limiting mechanisms in PSCs, and possible mitigation strategies are discussed. Contact passivation schemes and the effect of such methods on the reduction of hysteresis are described. Furthermore, several strategies that demonstrate how passivating contacts can increase the stability of PSCs are elucidated. Finally, the remaining key challenges in contact design are prioritized and an outlook on how passivating contacts will contribute to further the progress toward market readiness of high-efficiency PSCs is presented.
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Affiliation(s)
- Erkan Aydin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Michele De Bastiani
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Stefaan De Wolf
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Thuwal, 23955-6900, Kingdom of Saudi Arabia
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15
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Kim JY, Kwak G, Choi YC, Kim DH, Han YS. Enhanced performance of perovskite solar cells by incorporation of a triphenylamine derivative into hole-transporting poly(3-hexylthiophene) layers. J IND ENG CHEM 2019. [DOI: 10.1016/j.jiec.2019.01.022] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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16
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Najafi L, Taheri B, Martín-García B, Bellani S, Di Girolamo D, Agresti A, Oropesa-Nuñez R, Pescetelli S, Vesce L, Calabrò E, Prato M, Del Rio Castillo AE, Di Carlo A, Bonaccorso F. MoS 2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of a CH 3NH 3PbI 3 Perovskite Solar Cell with an Efficiency of over 20. ACS NANO 2018; 12:10736-10754. [PMID: 30240189 DOI: 10.1021/acsnano.8b05514] [Citation(s) in RCA: 65] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Interface engineering of organic-inorganic halide perovskite solar cells (PSCs) plays a pivotal role in achieving high power conversion efficiency (PCE). In fact, the perovskite photoactive layer needs to work synergistically with the other functional components of the cell, such as charge transporting/active buffer layers and electrodes. In this context, graphene and related two-dimensional materials (GRMs) are promising candidates to tune "on demand" the interface properties of PSCs. In this work, we fully exploit the potential of GRMs by controlling the optoelectronic properties of molybdenum disulfide (MoS2) and reduced graphene oxide (RGO) hybrids both as hole transport layer (HTL) and active buffer layer (ABL) in mesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (MAPbI3)-based PSCs. We show that zero-dimensional MoS2 quantum dots (MoS2 QDs), derived by liquid phase exfoliated MoS2 flakes, provide both hole-extraction and electron-blocking properties. In fact, on one hand, intrinsic n-type doping-induced intraband gap states effectively extract the holes through an electron injection mechanism. On the other hand, quantum confinement effects increase the optical band gap of MoS2 (from 1.4 eV for the flakes to >3.2 eV for QDs), raising the minimum energy of its conduction band (from -4.3 eV for the flakes to -2.2 eV for QDs) above the one of the conduction band of MAPbI3 (between -3.7 and -4 eV) and hindering electron collection. The van der Waals hybridization of MoS2 QDs with functionalized reduced graphene oxide (f-RGO), obtained by chemical silanization-induced linkage between RGO and (3-mercaptopropyl)trimethoxysilane, is effective to homogenize the deposition of HTLs or ABLs onto the perovskite film, since the two-dimensional nature of RGO effectively plugs the pinholes of the MoS2 QD films. Our "graphene interface engineering" (GIE) strategy based on van der Waals MoS2 QD/graphene hybrids enables MAPbI3-based PSCs to achieve a PCE up to 20.12% (average PCE of 18.8%). The possibility to combine quantum and chemical effects into GIE, coupled with the recent success of graphene and GRMs as interfacial layer, represents a promising approach for the development of next-generation PSCs.
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Affiliation(s)
- Leyla Najafi
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Babak Taheri
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Beatriz Martín-García
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Sebastiano Bellani
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | - Diego Di Girolamo
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Antonio Agresti
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Reinier Oropesa-Nuñez
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
- BeDimensional Srl. , Via Albisola 121 , 16163 Genova , Italy
| | - Sara Pescetelli
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Luigi Vesce
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Emanuele Calabrò
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
| | - Mirko Prato
- Materials Characterization Facility , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
| | | | - Aldo Di Carlo
- C.H.O.S.E. (Centre for Hybrid and Organic Solar Energy), Department of Electronic Engineering , University of Rome Tor Vergata , Via del Politecnico 1 , 00133 Rome , Italy
- L.A.S.E.-Laboratory for Advanced Solar Energy , National University of Science and Technology "MISiS" , Leninskiy Prosect 6 , 119049 Moscow , Russia
| | - Francesco Bonaccorso
- Graphene Labs , Istituto Italiano di Tecnologia , Via Morego 30 , 16163 Genova , Italy
- BeDimensional Srl. , Via Albisola 121 , 16163 Genova , Italy
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17
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Ochirbat A, Lee Y, Yoo SM, Lee SY, Bang J, Kim M, Lee HJ. Preparing Effective Panchromatic Hybrid Sensitizers Composed of Inorganic Quantum Dots and Organic Dyes. CHEM LETT 2018. [DOI: 10.1246/cl.180660] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Altantuya Ochirbat
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
| | - Yong Lee
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
| | - So-Min Yoo
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
| | - Seul-Yi Lee
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
| | - Jiwon Bang
- Electronic Conversion Materials Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52852, Korea
| | - Myoung Kim
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
- Department of Bioactive Material Sciences, Chonbuk National University, Jeonju 561-756, Korea
| | - Hyo Joong Lee
- Department of Chemistry, Chonbuk National University, Jeonju 561-756, Korea
- Department of Bioactive Material Sciences, Chonbuk National University, Jeonju 561-756, Korea
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18
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Guo Z, Gao L, Xu Z, Teo S, Zhang C, Kamata Y, Hayase S, Ma T. High Electrical Conductivity 2D MXene Serves as Additive of Perovskite for Efficient Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1802738. [PMID: 30300503 DOI: 10.1002/smll.201802738] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2018] [Revised: 08/27/2018] [Indexed: 05/21/2023]
Abstract
MXenes, a newly intriguing family of 2D materials, have recently attracted considerable attention owing to their excellent properties such as high electrical conductivity and mobility, tunable structure, and termination groups. Here, the Ti3 C2 Tx MXene is incorporated into the perovskite absorber layer for the first time, which aims for efficiency enhancement. Results show that the termination groups of Ti3 C2 Tx can retard the crystallization rate, thereby increasing the crystal size of CH3 NH3 PbI3 . It is found that the high electrical conductivity and mobility of MXene can accelerate the charge transfer. After optimizing the key parameters, 12% enhancement in device performance is achieved by 0.03 wt% amount of MXene additive. This work unlocks opportunities for the use of MXene as potential materials in perovskite solar cell applications.
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Affiliation(s)
- Zhanglin Guo
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Liguo Gao
- School of Petroleum and Chemical Engineering, Dalian University of Technology, Panjin Campus, Panjin, 124221, P. R. China
| | - Zhenhua Xu
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Siowhwa Teo
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Chu Zhang
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Yusuke Kamata
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Shuzi Hayase
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Tingli Ma
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka, 808-0196, Japan
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