Mono-Elemental Properties of 2D Black Phosphorus Ensure Extended Charge Carrier Lifetimes under Oxidation: Time-Domain Ab Initio Analysis

Self-passivation of Halide Interstitial Defects by Organic Cations in Hybrid Lead-Halide Perovskites: Ab Initio Quantum Dynamics

Halide interstitial defects severely hinder the optoelectronic performance of metal halide perovskites, making research on their passivation crucial. We demonstrate, using ab initio nonadiabatic molecular dynamics simulations, that hydrogen vacancies (Hv) at both N and C atoms of the methylammonium (MA) cation in MAPbI3 efficiently passivate iodine interstitials (Ii), providing a self-passivation strategy for dealing with the Hv and Ii defects simultaneously. Hv at the N site (Hv-N) introduces a defect state into the valence band, while the state contributed by Hv at the C site (Hv-C) evolves from a shallow level at 0 K to a deep midgap state at ambient temperature, exhibiting a high environmental activity. Both Hv-N and Hv-C are strong Lewis bases, capable of capturing and passivating Ii defects. Hv-C is a stronger Lewis base, bonds with Ii better, and exhibits a more pronounced passivation effect. The charge carrier lifetimes in the passivated systems are significantly longer than in those containing either Hv or Ii, and even in pristine MAPbI3. Our demonstration of the Hv and Ii defect self-passivation in MAPbI3 suggests that systematic control of the relative concentrations of Hv and Ii can simultaneously eliminate both types of defects, thereby minimizing charge and energy losses. The demonstrated defect self-passivation strategy provides a promising means for defect control in organic-inorganic halide perovskites and related materials and deepens our atomistic understanding of defect chemistry and charge carrier dynamics in solar energy and optoelectronic materials.

Polyacid-Modulated Carrier Dynamic Behavior at the Interface of 0D/2D Heterojunctions

Heterojunctions formed by polyoxometalates and 2D materials draw attention owing to their remarkable photoelectric and catalytic properties. However, the intrinsic mechanisms of polyoxometalates regulating the heterojunction photoelectric properties are unclear. Herein, we constructed two types of heterojunctions by integrating polyoxometalates (Keggin-type H3PW12O40 and Lindqvist-type H2W6O19) on g-C3N4 monolayers, exploring photoexcited carrier dynamics in these heterojunctions by ab initio calculations combined with nonadiabatic molecular dynamics (NAMD) simulations. Our results show that electrons and holes in H3PW12O40 on g-C3N4 monolayers relax within 583 and 760 fs, respectively. The electron-hole recombination occurs at 342 fs, faster than carrier separation, aligning with the behavior of Z-type heterojunctions. Contrarily, the H2W6O19/g-C3N4 heterojunction exhibits the typical characteristics of type II heterojunctions, with a long photogenerated carrier lifetime reaching 652 fs. These findings show tunable band alignment in polyoxometalate-supported systems by modulating polyoxometalate type, influencing hot electron dynamics, and guiding 0D/2D heterojunction design.

Compression of Organic Molecules Coupled with Hydrogen Bonding Extends the Charge Carrier Lifetime in BA2SnI4

Two-dimensional (2D) metal halide perovskites, such as BA2SnI4 (BA═CH3(CH2)3NH3), exhibit an enhanced charge carrier lifetime in experiments under strain. Experiments suggest that significant compression of the BA molecule, rather than of the inorganic lattice, contributes to this enhancement. To elucidate the underlying physical mechanism, we apply a moderate compressive strain to the entire system and subsequently introduce significant compression to the BA molecules. We then perform ab initio nonadiabatic molecular dynamics simulations of nonradiative electron-hole recombination. We observe that the overall lattice compression reduces atomic motions and decreases nonadiabatic coupling, thereby delaying electron-hole recombination. Additionally, compression of the BA molecules enhances hydrogen bonding between the BA molecules and iodine atoms, which lengthens the Sn-I bonds, distorts the [SnI6]4- octahedra, and suppresses atomic motions further, thus reducing nonadiabatic coupling. Also, the elongated Sn-I bonds and weakened antibonding interactions increase the band gap. Altogether, the compression delays the nonradiative electron-hole recombination by more than a factor of 3. Our simulations provide new and valuable physical insights into how compressive strain, accommodated primarily by the organic ligands, positively influences the optoelectronic properties of 2D layered halide perovskites, offering a promising pathway for further performance improvements.

Impact of large A-site cations on electron-vibrational interactions in 2D halide perovskites: Ab initio quantum dynamics

Using ab initio nonadiabatic molecular dynamics, we study the effect of large A-site cations on nonradiative electron-hole recombination in two-dimensional Ruddlesden-Popper perovskites HA2APb2I7, HA = n-hexylammonium, A = methylammonium (MA), or guanidinium (GA). The steric hindrance created by large GA cations distorts and stiffens the inorganic Pb-I lattice, reduces thermal structural fluctuations, and maintains the delocalization of electrons and holes at ambient and elevated temperatures. The delocalized charges interact more strongly in the GA system than in the MA system, and the charge recombination is accelerated. In contrast, replacement of only some MA cations with GA enhances disorder and increases charge lifetime, as seen in three-dimensional perovskites. This study highlights the key influence of structural fluctuations and disorder on the properties of charge carriers in metal halide perovskites, providing guidance for tuning materials' optoelectronic performance.

Rational Design of Full-Color Fluorescent C3N Quantum Dots

Carbon-based quantum dots (QDs) exhibit unique photoluminescence due to size-dependent quantum confinement, giving rise to fascinating full-color emission properties. Accurate emission calculations using time-dependent density functional theory are a time-costing and expensive process. Herein, we employed an artificial neural network (ANN) combined with statistical learning to establish the relationship between geometrical/electronic structures of ground states and emission wavelength for C3N QDs. The emission energy of these QDs can be doubly modulated by size and edge effects, which are governed by the number of C4N2 rings and the CH group, respectively. Moreover, these two structural characteristics also determine the phonon vibration mode of C3N QDs to harmonize the emission intensity and lifetime of hot electrons in the electron-hole recombination process, as indicated by nonadiabatic molecular dynamics simulation. These computational results provide a general approach to atomically precise design the full-color fluorescent carbon-based QDs with targeted functions and high performance.

Resolving the Puzzle of Charge Carrier Lifetime in ZnO by Revisiting the Role of Oxygen Vacancy

Zinc oxide (ZnO) is a wide bandgap prototypical n-type semiconductor due to the presence of intrinsic oxygen vacancies (VO). The VO can readily transfer to the most energetically favorable +2 charged VO (VO2+) by losing two electrons mediated by the metastable VO1+ defect. Nevertheless, the influence of charged VO on the charge dynamics in ZnO and the underlying mechanisms remain elusive. By performing nonadiabatic molecular dynamics simulations of the charge trapping and recombination processes, we show that both VO1+ and VO2+ slow down the nonradiative electron-hole recombination via assisted defect states and, thus, extending charge carrier lifetime compared to pristine ZnO. Our study contributes to identifying the different recombination pathways that take place in VO1+ and VO2+ of n-type ZnO systems, providing useful guidance for designing high-performance ZnO-based devices.

Lattice Distortion and Low-Frequency Anharmonic Phonons Suppress Charge Recombination in Lead Halide Perovskites upon Pseudohalide Doping: Time-Domain Ab Initio Analysis

Perovskite solar cells have witnessed a surge in interest as a promising technology for low-cost, high-efficiency photovoltaics with certified power conversion efficiencies beyond 25%. However, their commercial development is hindered by poor stability and nonradiative losses that restrict their approach to the theoretical efficiency limit. Using ab initio nonadiabatic molecular dynamics, we demonstrate that nonradiative charge recombination is suppressed when the iodide in formamidinium lead iodide (FAPbI3) is partially replaced with pseudohalide anions (SCN-, BF4-, and PF6-). The replacement breaks the symmetry of the system and creates local structural distortion and dynamic disorder, decreasing electron-hole overlap and nonadiabatic electron-vibrational coupling. The charge carrier lifetime is found to increase with increased structural distortion and is the longest for PF6-. This work is fundamentally relevant to the design of high-performance perovskite materials for optoelectronic applications.

The sp3 Defect Decreases Charge Carrier Lifetime in (8,3) Single-Walled Carbon Nanotubes

A recent experimental approach introduces sp3 defects into single-walled carbon nanotubes (SWNTs) through controlled functionalization with guanine, resulting in a decrease in charge carrier lifetime. However, the physical mechanism behind this phenomenon remains unclear. We employ nonadiabatic molecular dynamics to systematically model the nonradiative recombination process of electron-hole pairs in SWNTs with sp3 defects generated by a guanine molecule. We demonstrate that the introduction of sp3 defects creates an overlapping channel between the highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO), significantly enhancing the nonadiabatic (NA) coupling and leading to a 4.7-fold acceleration in charge carrier recombination compared to defect-free SWNTs. The charge carrier recombination slows significantly at a lower temperature (50 K) due to the weakening of the NA coupling. Our results rationalize the accelerated recombination of charge carriers in SWNTs with sp3 defects in experiments and contribute to a deeper understanding of the carrier dynamics in SWNTs.

Efficient Modeling of Quantum Dynamics of Charge Carriers in Materials Using Short Nonequilibrium Molecular Dynamics

Nonadiabatic molecular dynamics provides essential insights into excited-state processes, but it is computationally intense and simplifications are needed. The classical path approximation provides critical savings. Still, long heating and equilibration steps are required. We demonstrate that practical results can be obtained with short, partially equilibrated ab initio trajectories. Once the system's structure is adequate and essential fluctuations are sampled, the nonadiabatic Hamiltonian can be constructed. Local structures require only 1-2 ps trajectories, as demonstrated with point defects in metal halide perovskites. Short trajectories represent anharmonic motions common in defective structures, an essential improvement over the harmonic approximation around the optimized geometry. Glassy systems, such as grain boundaries, require different simulation protocols, e.g., involving machine learning force fields. 10-fold shorter trajectories generate 10-20% time scale errors, which are acceptable, given experimental uncertainties and other approximations. The practical NAMD protocol enables fast screening of excited-state dynamics for rapid exploration of new materials.

Passivation of Hematite by a Semiconducting Overlayer Reduces Charge Recombination: An Insight from Nonadiabatic Molecular Dynamics

Hematite (α-Fe₂O₃) is a promising photoanode material for photoelectrochemical water splitting. Surface-passivating layers are effective in improving water oxidation kinetics; however, the passivation mechanism is not fully understood due to the complexity of interfacial reactions. Focusing on the Fe-terminated Fe₂O₃ (0001) surface that exhibits surface states in the band gap, we perform ab initio quantum dynamics simulations to study the effect of an α-Ga₂O₃ overlayer on charge recombination. The overlayer eliminates surface states and suppresses charge recombination 4-fold. This explains in part the observed cathodic shift in the onset potential for water oxidation. The increased charge carrier lifetime is an outcome of two factors, energy gap and electron-vibrational coupling, with a positive contribution from the former but a negative contribution from the latter. This work presents an advance in the atomistic time-domain understanding of the influence of surface passivation on charge recombination dynamics and provides guidance for designing novel α-Fe₂O₃ photoanodes.

Insights into Photoinduced Carrier Dynamics and Overall Water Splitting of Z-Scheme van der Waals Heterostructures with Intrinsic Electric Polarization

Using first-principles calculations in combination with nonadiabatic molecular dynamics (NAMD), we propose novel heterostructures of carbon nitride (C₇N₆) and the Janus GaSnPS monolayer as promising direct Z-scheme photocatalysts for solar-driven overall water splitting. The out-of-plane electric field due to the electric polarization which is dependent on the stacking pattern alters the band alignment and catalytic activity of the heterostructures. The relatively strong interfacial nonadiabatic coupling and long quantum coherence time accelerate the interlayer carrier recombination, enabling a direct Z-scheme photocatalytic mechanism. More importantly, the redox ability of the remanent photogenerated carriers in the Z scheme is strong enough to trigger both the hydrogen evolution reaction (HER) and oxygen reduction reaction (OER) simultaneously without the help of sacrificial agents. Our work reveals a fundamental understanding of ultrafast charge carrier dynamics at vdW heterointerfaces as well as new design prospects for highly efficient direct Z-scheme photocatalysts.

Interlayer Doping of Cu on Bilayer Black Phosphorus for Enhanced Charge Transfer and Transport Properties

Metal doping between black phosphorus (BP) layers has great advantages in modulating electronic properties. Here, the effects of Cu intercalation on charge transfer and carrier dynamics are investigated by theoretical calculations. Relative to the pristine bilayer BP, Cu suppresses the nonradiative electron-hole recombination, reducing the major pathways of energy and current loss. Furthermore, we investigate a novel pn homogeneous junction based on the Cu-doped bilayer BP, which shows enhanced transport properties and Ohmic contact characteristics. This is because doping leads to the transformation of BP from p-type to n-type, charge accumulation on conduction bands allows electrons to be easily transferred to the p-type bilayer BP, and associated electrical properties can be modulated by the doping concentration. This study has fundamental importance for understanding structure-property relationships in metal intercalation, which is an important guidance for integration and interlayer engineering for two-dimensional materials.

Bimetallic Alloys b-AsxP1-x at High Concentration Differences: Ideal for Photonic Devices

Black arsenic phosphorus (b-As_xP_1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, As_xP_1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. As_xP_1-x at x ≤ 0.25 is capable of broadband absorption, while b-As_xP_1-x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-As_xP_1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-As_xP_1-x with high concentration differences is a perfect candidate for photonic material.

Structural Disorder in Higher-Temperature Phases Increases Charge Carrier Lifetimes in Metal Halide Perovskites

Solar cells and optoelectronic devices are exposed to heat that degrades performance. Therefore, elucidating temperature-dependent charge carrier dynamics is essential for device optimization. Charge carrier lifetimes decrease with temperature in conventional semiconductors. The opposite, anomalous trend is observed in some experiments performed with MAPbI₃ (MA = CH₃NH₃⁺) and other metal halide perovskites. Using ab initio quantum dynamics simulation, we establish the atomic mechanisms responsible for nonradiative electron-hole recombination in orthorhombic-, tetragonal-, and cubic MAPbI₃. We demonstrate that structural disorder arising from the phase transitions is as important as the disorder due to heating in the same phase. The carrier lifetimes grow both with increasing temperature in the same phase and upon transition to the higher-temperature phases. The increased lifetime is rationalized by structural disorder that induces partial charge localization, decreases nonadiabatic coupling, and shortens quantum coherence. Inelastic and elastic electron-vibrational interactions exhibit opposite dependence on temperature and phase. The partial disorder and localization arise from thermal motions of both the inorganic lattice and the organic cations and depend significantly on the phase. The structural deformations induced by thermal fluctuations and phase transitions are on the same order as deformations induced by defects, and hence, thermal disorder plays a very important role. Since charge localization increases carrier lifetimes but inhibits transport, an optimal regime maximizing carrier diffusion can be designed, depending on phase, temperature, material morphology, and device architecture. The atomistic mechanisms responsible for the enhanced carrier lifetimes at elevated temperatures provide guidelines for the design of improved solar energy and optoelectronic materials.

Tuning photoelectron dynamic behavior of thiolate-protected MAu24 nanoclusters via heteroatom substitution

Heteroatom substitution of gold nanoclusters enables precise tuning of their physicochemical properties at the single-atom level, which has a significant impact on the applications related to excited states including photovoltaics, photocatalysis and photo-luminescence. To this end, understanding the effect of metal exchange on the structures, electronic properties and photoexcited dynamic behavior of nanoclusters is imperative. Combining density functional theory with time-domain nonadiabatic molecular dynamics simulations, herein we explored the effect of metal replacement on the electronic and vibrational properties as well as excited-state dynamics of ligand-protected MAu₂₄(SR)₁₈ (M = Pd, Pt, Cd, and Hg) nanoclusters. At the atomistic level, we elucidate hot carrier relaxation and recombination dynamic behavior with various doping atoms. Such distinct excited-state behavior of MAu₂₄(SR)₁₈ nanoclusters is attributed to different energy gaps and electron-phonon coupling between the donor and acceptor energy levels, owing to the perturbation of nanoclusters by a single foreign atom. The specific phonon modes involved in excited-state dynamics have been identified, which are associated with the MAu₁₂ core and ligand rings. This time-dependent excited-state dynamic study fills the gap between structure/composition and excited-state dynamic behavior of MAu₂₄(SR)₁₈ nanoclusters, which would stimulate the exploration of their applications in photoenergy storage and conversion.

Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Manipulating excitons is of great significance to explore the optical properties of 2D materials. In this work, we investigate the excitonic properties and carrier dynamics of bilayer black phosphorene by imposing in-plane biaxial strain. The results show that the strain can modulate not only the contribution of the excitons to optical absorption but also the anisotropic shape of the first exciton. This can be ascribed to the strain effect on the band realignment as well as to changes of the parity and the electron effective mass at the CBM. At the temperature of 300 K, a 3% strain reduces the non-adiabatic coupling between the VBM and CBM and then increases the carrier lifetime by a factor of 13, and the results can be used to estimate the strain effect on the excitonic lifetime. Our results demonstrate that manipulation of the biaxial strain is a promising strategy to modulate the exciton properties of black phosphorene.

Family of Two-Dimensional Transition Metal Dichlorides: Fundamental Properties, Structural Defects, and Environmental Stability

A large number of novel two-dimensional (2D) materials are constantly being discovered and deposited in databases. Consolidated implementation of machine learning algorithms and density functional theory (DFT)-based predictions have allowed the creation of several databases containing an unimaginable number of 2D samples. As the next step in this chain, the investigation leads to a comprehensive study of the functionality of the invented materials. In this work, a family of transition metal dichlorides have been screened out for systematic investigation of their structural stability, fundamental properties, structural defects, and environmental stability via DFT-based calculations. The work highlights the importance of using the potential of the invented materials and proposes a comprehensive characterization of a new family of 2D materials.

Effects of oxygen vacancies on the photoexcited carrier lifetime in rutile TiO2

The photoexcited carrier lifetime in semiconductors plays a crucial role in solar energy conversion processes. The defects or impurities in semiconductors are usually proposed to introduce electron-hole (e-h) recombination centers and consequently reduce the photoexcited carrier lifetime. In this report, we investigate the effects of oxygen vacancies (O_V) on the carrier lifetime in rutile TiO₂, which has important applications in photocatalysis and photovoltaics. It is found that an O_V introduces two excess electrons which form two defect states in the band gap. The lower state is localized on one Ti atom and behaves as a small polaron, and the higher one is a hybrid state contributed by three Ti atoms around the O_V. Both the polaron and hybrid states exhibit strong electron-phonon (e-ph) coupling and their charge distributions become more and more delocalized when the temperature increases from 100 to 700 K. Such strong e-ph coupling and charge delocalization enhance the nonadibatic coupling between the electronic states along the hole relaxation path, where the defect states behave as intermediate states, leading to a distinct acceleration of e-h recombination. Our study provides valuable insights to understand the role of defects on photoexcited carrier lifetime in semiconductors.

Selective graphene-like metal-free 2D nanomaterials and their composites for photocatalysis

From the viewpoint of sustainability, graphene-like metal-free 2D nanomaterials (GMFs) hold great potential in different photocatalytic fields due to their distinct structures and properties. Although their lattice structures are highly similar, the properties of these nanomaterials are in vast diversity owing to the uniqueness of particular atomic arrangement, thus giving rise to their multi-faceted functionalities in photocatalytic process. In this review, we summarize the latest progress of GMFs and their hybrid composites in photocatalytic field, including graphene and its derivatives, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C₃N₄), black phosphorus (BP) and emerging 2D covalent organic frameworks (COFs). Their unique 2D structure and key photocatalytic properties are firstly briefly introduced. Then a critical discussion on their multiple roles in the activity enhancement of composite photocatalysts is emphasized, which in turn points out the direction of maximizing their functions and guides our efficient construction of hybrid photocatalysts based on above 2D nanomaterials. On this basis, a summary about the hybridization of above 2D metal-free materials is presented, and the merits of 2D/2D hybrid systems are elaborated. Last, we wrap up this review with some summative remarks, covering understanding their own unique strengths and weaknesses by comparison and proposing the major challenges and perspectives in this emerging field.

Identifying and Passivating Killer Defects in Pb-Free Double Cs2AgBiBr6 Perovskite

Pb-free double perovskites, such as Cs₂AgBiBr₆, are alternatives to lead halide perovskites for photovoltaic applications due to superior stability, low toxicity, and promising optoelectronic properties. However, their performance is subpar. We combine nonadiabatic molecular dynamics and real-time time-dependent density-functional theory to show that the negatively charged Br vacancy in Cs₂AgBiBr₆ creates an extremely detrimental donor-yielded (DY) center, which is a typical defect in six-coordinated semiconductors. Ag⁺ and Bi³⁺ form a bond by attraction through the anisotropic vacancy charge, generating a midgap state that traps holes within tens of picoseconds. Substituting Ag with indium by doping produces a weak and long In-Bi bond, lifting the defect energy level to the conduction band. Hole trapping slows down by an order or magnitude, and trap-assisted charge recombination decreases 4-fold. The simulations bring atomistic insights into defects of Pb-free double perovskites and provide a defect mitigation strategy for rational design of high-performance optoelectronic devices.

Ultrafast Interlayer Charge Separation, Enhanced Visible-Light Absorption, and Tunable Overpotential in Twisted Graphitic Carbon Nitride Bilayers for Water Splitting

Moiré pattern superlattice formed by 2D van der Waals layered structures have attracted great attention for diverse applications. In experiments, the enhancement of catalytic performance in twisted bilayer systems is reported while its mechanism remains unclear. From high-accuracy first-principles and time-dependent ab initio nonadiabatic molecular dynamics calculations, ultrafast interlayer charge transfer within 120 fs, excellent charge separation, improved visible-light absorption, and satisfactory overpotentials for the hydrogen evolution and oxygen evolution reactions in twisted graphitic carbon nitride (g-C₃ N₄ ) bilayers are found, which are beneficial to photocatalytic, photo-electrocatalytic, or electrocatalytic water splitting. This work provides insightful guidance to advanced nanocatalysis based on twisted layered materials.

Excited state dynamics in monolayer black phosphorus revisited: Accounting for many-body effects

The dynamics of electron-hole recombination in pristine and defect-containing monolayer black phosphorus (ML-BP) has been studied computationally by several groups relying on the one-particle description of electronic excited states. Our recent developments enabled a more sophisticated and accurate treatment of excited states dynamics in systems with pronounced excitonic effects, including 2D materials such as ML-BP. In this work, I present a comprehensive characterization of optoelectronic properties and nonadiabatic dynamics of the ground state recovery in pristine and divacancy-containing ML-BP, relying on the linear-response time-dependent density functional theory description of excited states combined with several trajectory surface hopping methodologies and decoherence correction schemes. This work presents a revision and new implementation of the decoherence-induced surface hopping methodology. Several popular algorithms for nonadiabatic dynamics algorithms are assessed. The kinetics of nonradiative relaxation of lower-lying excited states in ML-BP systems is revised considering the new methodological developments. A general mechanism that explains the sensitivity of the nonradiative dynamics to the presence of divacancy defect in ML-BP is proposed. According to this mechanism, the excited states' relaxation may be inhibited by the presence of energetically close higher-energy states if electronic decoherence is present in the system.

Dependence between Structural and Electronic Properties of CsPbI3: Unsupervised Machine Learning of Nonadiabatic Molecular Dynamics

Using unsupervised machine learning on the trajectories from a nonadiabatic molecular dynamics simulation with time-dependent Kohn-Sham density functional theory, we elucidated the structural parameters with the largest influence on nonradiative recombination of charge carriers in CsPbI₃, which forms the basis for solar energy and optoelectronic applications. The I-I-I angles between PbI₆ octahedra, followed by the Cs-I distance, have the strongest impact on the bandgap and the nonadiabatic coupling. The importance of the Cs-I distance is unexpected, because Cs does not contribute to electron and hole wave functions. The nonadiabatic coupling is most influenced by static properties, which is also surprising, given its explicit dependence on atomic velocities.

Small Polarons in Two-Dimensional Pnictogens: A First-Principles Study

We report the first-principles study of small polarons in the most stable two-dimensional pnictogen allotropes: blue and black phosphorene and arsenene. While both cations and anions of small hydrogen-passivated clusters show charge localization and local lattice distortions, only the hole polaron in the blue allotrope is stable in the infinite size cluster limit. The adiabatic polaron relaxation energy is found to be 0.1 eV for phosphorene and 0.15 eV for arsenene. The polaron is localized on lone-pair orbitals with half of the extra charge distributed among 13 atoms. In the blue phosphorene, these orbitals form the valence band's top with a relatively flat band dispersion. However, in the black phosphorene, lone-pair orbitals hybridize with bonding orbitals, which explains the difference in hole localization strength between the two topologically equivalent allotropes. The polaron's adiabatic barriers for motion are small compared to the most strongly coupled phonon frequency, implying the polaron barrierless motion.

Strong Modulation of Band Gap, Carrier Mobility and Lifetime in Two-Dimensional Black Phosphorene through Acoustic Phonon Excitation

Black phosphorene (BP) has been attracting intense attention due to its high charge mobility and potential applications in electronic, optical and optoelectronic devices. We demonstrate by ab initio molecular dynamics and nonadiabatic quantum dynamics simulations that the excitation of out-of-plane acoustic phonon (ZA) provides strong modulation of the band gap, carrier lifetime and carrier mobility in BP. A 1% tensile strain can significantly enhance ZA mode excitation at room temperature, distinctly reducing the band gap, carrier mobility, and lifetime. These electronic properties can be tuned easily by influencing the excitation amplitude of the ZA mode. Unique to the family of two-dimensional materials, the ZA mode plays an essential role in controlling the electronic properties of BP. The results of our study provide valuable guidelines for design of functional nanodevices based on 2D BP.

2D phosphorene nanosheets, quantum dots, nanoribbons: synthesis and biomedical applications

Phosphorene, also known as black phosphorus (BP), is a two-dimensional (2D) material that has gained significant attention in several areas of current research. Its unique properties such as outstanding surface activity, an adjustable bandgap width, favorable on/off current ratios, infrared-light responsiveness, good biocompatibility, and fast biodegradation differentiate this material from other two-dimensional materials. The application of BP in the biomedical field has been rapidly emerging over the past few years. This article aimed to provide a comprehensive review of the recent progress on the unique properties and extensive medical applications for BP in bone, nerve, skin, kidney, cancer, and biosensing related treatment. The details of applications of BP in these fields were summarized and discussed.

Capturing the Electron-Phonon Renormalization in Molecules from First-Principles

Since the interaction between electrons and atomic nuclei can affect the electronic structure, in recent years, first-principles-based electron-phonon renormalization methods have been applied in the condensed matter physics community to account for the influence of the electron-phonon coupling in solid systems. However, little is yet known about the behavior and trends of the electron-phonon renormalization in the molecules. In this work, the method for the electron-phonon renormalization in molecules has been derived, using which, we exhaustively investigate the zero-point renormalization in 32 molecules with three different density functions. We find that the renormalization of the highest occupied molecular orbital-lowest unoccupied molecular orbital gap due to electron-vibration coupling does not relate to the atomic masses but quite relates to the electronic structure properties of the molecules.

Efficient Photoexcited Charge Separation at the Interface of a Novel 0D/2D Heterojunction: A Time-Dependent Ultrafast Dynamic Study

To achieve efficient conversion and avoid loss of solar energy, ultrafast charge separation and slow electron-hole recombination are desired. Combining time-dependent density functional theory (TD-DFT) with nonadiabatic molecular dynamics, Au₉(PH₃)₈/MoS₂, as a prototype for zero-dimensional/two-dimensional (0D/2D) heterojunction, has been demonstrated to present excellent light absorption capacity and effective charge separation characteristics. In the heterojunction, photoexcitation of the Au₉(PH₃)₈ nanocluster drives an ultrafast electron transfer from Au₉(PH₃)₈ to MoS₂ within 20 fs, whereas photoexcitation of the MoS₂ nanosheet leads to hole transfer from MoS₂ to Au₉(PH₃)₈ within 680 fs. The strong nonadiabatic coupling and prominent density overlap are responsible for the faster electron separation relative to hole separation. In competition with the charge separation, electron-hole recombination requires 205 ns, ensuring an effective carrier separation. Our atomistic TD-DFT simulation provides valuable insights into the photocarrier dynamics at the Au₉(PH₃)₈/MoS₂ interface, which would stimulate the exploration of 0D/2D hybrid materials for photovoltaic and optoelectronic devices.

Fully Light-Controlled Memory and Neuromorphic Computation in Layered Black Phosphorus

Imprinting vision as memory is a core attribute of human cognitive learning. Fundamental to artificial intelligence systems are bioinspired neuromorphic vision components for the visible and invisible segments of the electromagnetic spectrum. Realization of a single imaging unit with a combination of in-built memory and signal processing capability is imperative to deploy efficient brain-like vision systems. However, the lack of a platform that can be fully controlled by light without the need to apply alternating polarity electric signals has hampered this technological advance. Here, a neuromorphic imaging element based on a fully light-modulated 2D semiconductor in a simple reconfigurable phototransistor structure is presented. This standalone device exhibits inherent characteristics that enable neuromorphic image pre-processing and recognition. Fundamentally, the unique photoresponse induced by oxidation-related defects in 2D black phosphorus (BP) is exploited to achieve visual memory, wavelength-selective multibit programming, and erasing functions, which allow in-pixel image pre-processing. Furthermore, all-optically driven neuromorphic computation is demonstrated by machine learning to classify numbers and recognize images with an accuracy of over 90%. The devices provide a promising approach toward neurorobotics, human-machine interaction technologies, and scalable bionic systems with visual data storage/buffering and processing.

Point Defects in Two-Dimensional γ-Phosphorus Carbide

Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here, a comprehensive density functional theory-based investigation of seven kinds of point defects in a recently produced γ allotrope of 2D phosphorus carbide (γ-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in γ-PC, while the Stone-Wales defect is not presented in γ-PC due to its transition-metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of γ-PC is systematically identified. The formation of point defects in γ-PC is found to be less energetically favorable than in graphene, phosphorene, and MoS₂. Meanwhile, defects can significantly modulate the electronic structure of γ-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.

New theoretical insights into the photoinduced carrier transfer dynamics in WS2/WSe2 van der Waals heterostructures

Shedding light on the dynamics of charge transfer is fundamental and important to understand the light-photocurrent power conversion in transition-metal dichalcogenide (TMD) heterostructures. Herein, based on time-dependent ab initio nonadiabatic molecular dynamics simulation, we studied the photoinduced carrier transfer dynamics in the WS2/WSe2 heterostructure and further analyzed the effects of stacking configuration and temperature. Our calculations show that the time scales of ultrafast hole transfer in the C7 and T stacking configurations are 35 fs and 30 fs, respectively, which are mainly caused by the adiabatic charge transfer mechanism. Meanwhile, the time scales of ultrafast electron transfer in the C7 and T stacking configurations are 12 fs and 40 fs, respectively, which are in good agreement with the experimental result. We also investigated in detail the photoinduced carrier transfer pathways of C7 and T stacking configurations, which appear to have some significant differences. In addition, we found that the temperature basically has no effect on the electron transfer dynamics of the WS2/WSe2 heterostructure; this is in excellent agreement with the experimental observation. In short, the reported findings can provide more in-depth insights into the photoinduced carrier transfer dynamics of TMD-based van der Waals heterostructures.

Accurate Computation of Nonadiabatic Coupling with Projector Augmented-Wave Pseudopotentials

Synergy of nonadiabatic molecular dynamics with real-time time-dependent density functional theory has led to significant progress in modeling excited-state dynamics in nanoscale and condensed matter systems over the past decade. Nonadiabatic coupling (NAC) is the central quantity in such simulations, and its accurate and efficient evaluation is an enduring challenge in time-dependent Kohn-Sham theory, particularly in conjunction with planewave basis sets and projector augmented-wave (PAW) pseudopotentials because of the complexity of the PAW "all-electron" wave function. We report a method for rigorous evaluation of the NAC with PAW wave functions and demonstrate an efficient approximation to the rigorous NAC that gives comparable accuracy. As a validation, we intensely examine the NAC matrix elements calculated using both pseudo- and all-electron wave functions under the PAW formalism in six representative systems. The approximate NAC obtained with pseudowave functions is close to the exact all-electron NAC, with the largest deviations observed when subshell d-electrons are involved in the transitions. The developed approach provides a rigorous and convenient methodology for the numerical computation of NAC in the Kohn-Sham theory framework.

Edge Influence on Charge Carrier Localization and Lifetime in CH3NH3PbBr3 Perovskite: Ab Initio Quantum Dynamics Simulation

The distribution of charge carriers in metal halide perovskites draws strong interest from the solar cell community, with experiments demonstrating that edges of various microstructures can improve material performance. This is rather surprising because edges and grain boundaries are often viewed as the main source of charge traps. We demonstrate by ab initio quantum dynamics simulations that edges of the CH₃NH₃PbBr₃ perovskite create shallow trap states that mix well with the valence and conduction bands of the bulk and therefore support mobile charge carriers. Charges are steered to the edges energetically, facilitating dissociation of photo-generated excitons into free carriers. The edge-driven charge separation extends carrier lifetimes because of decreased overlap of the electron and hole wave functions, which leads to reduction of the nonadiabatic coupling responsible for nonradiative electron-hole recombination. Reduction of spatial symmetry near the edges activates additional vibrational modes that accelerate coherence loss within the electronic subsystem, further extending carrier lifetimes. Enhanced atomic motions at edges increase fluctuations of edge energy levels, enhancing mixing with band states and improving charge mobility. The simulations contribute to the atomistic understanding of the unusual properties of metal halide perovskites, generating the fundamental knowledge needed to design high-performance optoelectronic devices.

Interlayer Polarization Explains Slow Charge Recombination in Two-Dimensional Halide Perovskites by Nonadiabatic Molecular Dynamics Simulation

Two-dimensional (2D) perovskites for applications in photovoltaics and optoelectronics are attracting a great deal of research interest. The nonradiative electron-hole (e-h) recombination is the major efficiency loss channel. Herein, we report a study of the thickness dependence of the e-h recombination dynamics in diamine-based 2D perovskite via ab initio NAMD. For multilayer structures, due to the emergence of spontaneous interlayer electric polarization, which is induced by the collective and correlated reorientation of methylammonium molecules, the electron and hole at the band edges are localized in different inorganic layers, suppressing the e-h recombination. Furthermore, a broad range of phonon excitation also inspired rapid pure dephasing related to the microscopic origin for longer recombination times. The combination of the two effects leads to the observation of a prolonged carrier lifetime in multilayer 2D perovskites, which is essential to understanding the nonradiative e-h recombination mechanism in such materials.

Ab initio quantum dynamics of charge carriers in graphitic carbon nitride nanosheets

Graphitic carbon nitride (g-C₃N₄), a metal-free and visible light responsive photocatalyst, has garnered much attention due to its wide range of applications. In order to elucidate the role of dimensionality on the properties of photo-generated charge carriers, we apply nonadiabatic (NA) molecular dynamics combined with time-domain density functional theory to investigate nonradiative relaxation of hot electrons and holes, and electron-hole recombination in monolayer and bulk g-C₃N₄. The nonradiative charge recombination occurs on a nanosecond timescale and is faster in bulk than the nanosheet, in agreement with the experiment. The difference arises due to the smaller energy gap and participation of additional vibrations in the bulk system. The long carrier lifetimes are favored by small NA coupling and rapid phonon-induced loss of quantum coherence between the excited and ground electronic states. Decoherence is fast because g-C₃N₄ is soft and undergoes large scale vibrations. The NA coupling is small since electrons and holes are localized on different atoms, and the electron-hole overlap is relatively small. Phonon-driven relaxation of hot electrons and holes takes 100-200 fs and is slightly slower at higher initial energies due to participation of fewer vibrational modes. This feature of two-dimensional g-C₃N₄ contrasts traditional three-dimensional semiconductors, which exhibit faster relaxation at higher energies due to larger density of states, and can be used to extract hot carriers to perform useful functions. The ab initio quantum dynamics simulations present a comprehensive picture of the photo-induced charge carrier dynamics in g-C₃N₄, guiding design of photovoltaic and photocatalytic devices.

Tuning the Carrier Lifetime in Black Phosphorene through Family Atom Doping

It is highly desirable to control the carrier lifetime in two-dimensional (2D) materials to suit the needs of various device functionalities. In this work, by ab initio nonadiabatic molecular dynamics simulation, we find the single atom doping from phosphorus family elements can sufficiently tune the carrier lifetime in black phosphorene (BP). Instead of forming electron-hole (e-h) recombination centers, the e-h recombination is suppressed by doping compared with the pristine BP. Moreover, it is found the carrier lifetime has a strong correlation with the mass of the doping atoms. A doping atom with larger mass leads to a longer lifetime. With the heaviest family element Bi doping, the carrier lifetime increases from 0.29 to 5.34 ns. This trend can be understood from the reduction of the nuclear velocity due to the heavy doping atom. We propose this conclusion can be extended to other monoelemental 2D semiconductors, which provides important guidance for the future design of functional nanodevices.

MAI Termination Favors Efficient Hole Extraction and Slow Charge Recombination at the MAPbI3/CuSCN Heterojunction

Photoinduced charge separation is the key step determining the efficiency of photon-to-electron conversion in solar cells, while charge carrier lifetimes govern the overall solar cell performance. Experiments report that copper(I) thiocyanate (CuSCN) is a very promising hole extraction layer for perovskite solar cells. Using nonadiabatic molecular dynamics combined with ab initio time-domain density functional theory, we show that termination of CH₃NH₃PbI₃ (MAPbI₃) at MAPbI₃/CuSCN heterojunctions has a strong influence on both charge separation and recombination. Both processes are favored by MAI termination, compared to PbI₂ termination. Because the MAPbI₃ valence band originates from iodine orbitals while the conduction band arises from Pb orbitals, MAI termination places holes close to CuSCN, favoring extraction, and creates an MAI barrier for recombination of electrons in MAPbI₃ and holes in CuSCN. The opposite is true for PbI₂ termination. The origin of these effects is attributed solely to the properties of the MAPbI₃ surfaces, and therefore, the conclusions should apply to other hole-transporting materials and can be generalized to other perovskites. Importantly, the simulations show that the injected hole remains hot for several hundreds of femtoseconds, allowing it to escape the interfacial region and prevent formation of bound excitons. This study suggests that metal halide perovskites should be treated with an organic precursor, such as MAI, prior to the formation of their interfaces with hole-transporting materials. The reported results advance the fundamental understanding of the highly unusual properties of metal halide perovskites and provide specific guidelines for optimizing the performance of perovskite solar cells and other devices.

Band-Gap and Charge Transfer Engineering in Red Phosphorus-Based Composites for Enhanced Visible-Light-Driven H2 Evolution

It is known that the low lifetime of photogenerated carriers is the main drawback of elemental photocatalysts. Therefore, a facile and versatile one-step strategy to simultaneously achieve the oxygen covalent functionalization of amorphous red phosphorus (RP) and in situ modification of CdCO₃ is reported. This strategy endows RP with enhanced charge carrier separation ability and photocatalytic activity by coupling band-gap engineering and heterojunction construction. The as-prepared nCdCO₃ /SO-RP (n=0.1, 0.25, 0.5, 1.0) composites exhibited excellent photocatalytic H₂ evolution activity (up to 516.3 μmol g^-1  h) from visible-light-driven water splitting (λ>400 nm), which is about 17.6 times higher than that of pristine RP. By experimental and theoretical investigations, the roles of surface oxygen covalent functionalization, that is, prolonging the lifetime of photogenerated carriers and inducing the negative shift of the conduction band potential, were studied in detail. Moreover, the charge transfer mechanism of these composites has also been proposed. In addition, these composites are stable and can be reused at least for three times without significant activity loss. This work may provide a good example of how to promote the activity of elemental photocatalysts by decorating their atomic structure.

Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Mono- and few-layer transition metal dichalcogenides (TMDs) are among the most appealing candidates for electronic and optoelectronic devices. During synthesis, TMDs actively interact with substrates, which induce notable strain and influence significantly charge carriers in TMDs. By performing time-domain ab initio simulations on monolayer WSe₂, we demonstrate that charge carrier lifetimes vary by a factor of 3 within a typical 1% strain range, the bandgap changes by 0.2 eV, and electron-phonon interactions vary by 60%. Fortuitously, the most common tensile strain extends the lifetimes. The changes arise because of modifications in interatomic interactions. Further, compared to the optimized structure, at ambient temperature the bandgap drops by 0.1 eV and fluctuates by 0.1 eV. WSe₂ obeys linear response within 1% strain; however, further strain leads to nonlinear qualitative changes in WSe₂ electronic properties. The conduction band is affected more strongly than the valence band. Charges couple to phonons within a 100-400 cm^-1 frequency range, with the strongest coupling to in-plane and out-of-plane modes at 250 cm^-1. The reported findings agree with the available experiments and should be generic to other 2D materials. The strain effects need to be considered during TMD synthesis and provide means to control and tune TMD properties for 2D device applications.

Electron-Phonon Scattering Is Much Weaker in Carbon Nanotubes than in Graphene Nanoribbons

Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) are lower-dimensional derivatives of graphene. Similar to graphene, they exhibit high charge mobilities; however, in contrast to graphene, they are semiconducting and thus are suitable for electronics, optics, solar energy devices, and other applications. Charge carrier mobilities, energies, and lifetimes are governed by scattering with phonons, and we demonstrate, using ab initio nonadiabatic molecular dynamics, that charge-phonon scattering is much stronger in GNRs. Focusing on a GNR and a CNT of similar size and electronic properties, we show that the difference arises because of the significantly higher stiffness of the CNT. The GNR undergoes large-scale undulating motions at ambient conditions. Such thermal geometry distortions localize wave functions, accelerate both elastic and inelastic charge-phonon scattering, and increase the rates of energy and carrier losses. Even though, formally, both CNTs and GNRs are quantum confined derivatives of graphene, charge-phonon scattering differs significantly between them. Showing good agreement with time-resolved photoconductivity and photoluminescence measurements, the study demonstrates that GNRs are quite similar to molecules, such as conjugated polymers, while CNTs exhibit extended features attributed to bulk materials. The state-of-the-art simulations alter the traditional view of graphene nanostructures and demonstrate that the performance can be tuned not only by size and composition but also by stiffness and response to thermal excitation.

Suppressed Carrier Recombination in Janus MoSSe Bilayer Stacks: A Time-Domain Ab Initio Study

Janus transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional materials with a vertical dipole moment. Here, using time-domain ab initio simulations, we show that electron-hole recombination can be substantially suppressed via different stacking orientations of bilayer MoSSe. Despite having a larger net dipole moment, a S-Se/S-Se oriented MoSSe bilayer has a shorter carrier lifetime due to strong nonadiabatic coupling and a small band gap. The electron-hole recombination is coupled to the interlayer out-of-plane motion. In contrast, the opposite vertical dipoles weaken interlayer interactions in symmetric oriented MoSSe bilayers. Consequently, initial and final states are localized within different layers, and this significantly suppresses carrier recombination, resulting in an order of magnitude longer excited carrier lifetime in Se-S/S-Se oriented MoSSe bilayers. Our simulations provide theoretical insights into the carrier dynamics and suggest a way to enhance the carrier lifetime in Janus TMDs for efficient energy harvesting.

Surface Pb-Dimer Passivated by Molecule Oxygen Notably Suppresses Charge Recombination in CsPbBr3 Perovskites: Time-Domain Ab Initio Analysis

Experiments show that excess lead atoms accelerate charge recombination while oxygen passivation can heal the defects and enhance solar cell efficiency. Using ab initio nonadiabatic (NA) molecular dynamics, we demonstrate that an excess lead atom forms a Pb-dimer with a single surface lead atom of CsPbBr₃(001) surface and creates a deep hole trap. The electron-hole recombination is accelerated to over 10 ps via fast hole trapping or bypassing the hole trap compared to the pristine CsPbBr₃, occurring on tens of picoseconds. Pb-dimer passivated with oxygen molecules forms Pb-O bonds, breaks the Pb-dimer, and removes the trap state, leading to a decrease in the recombination and extending excited-state lifetime to over 100 ps. The deceleration arises mainly due to the reduced NA coupling and short decoherence time. The study advances our understanding of excited-state dynamics of all-inorganic perovskites in the presence of excess lead and oxygen atmosphere.

Carrier Lifetimes and Recombination Pathways in Metal-Organic Frameworks

Understanding the excited-state charge carrier relaxation in metal-organic frameworks (MOFs) and revealing ways to alternate its rate are of primary importance for the development of novel hybrid photoactive materials with sufficiently long carrier lifetimes; in particular, shedding light on the main recombination pathways in this class of compounds is needed. Therefore, in this work the radiative and phonon-assisted nonradiative electron-hole recombination is investigated theoretically for a model MOF system, and the nonradiative pathway is demonstrated to be dominant even for a pristine defect-free material. Theoretically predicted electron-hole lifetimes are in line with the available experimental data, suggesting that the adopted methodology is suitable for prediction of carrier lifetimes and helpful for the interpretation of experimental data. Based on the obtained conclusions, the principles for modification of MOF geometrical and chemical structure, enabling the extension of carrier lifetimes, are formulated.

Influence of Defects on Excited-State Dynamics in Lead Halide Perovskites: Time-Domain ab Initio Studies

This Perspective summarizes recent research into the excited-state dynamics in lead halide perovskites that are of paramount importance for photovoltaic and photocatalytic applications. Nonadiabatic molecular dynamics combined with time-domain ab initio density functional theory allows one to mimic time-resolved spectroscopy experiments at the atomistic level of detail. The focus is placed on realistic aspects of perovskite materials, including point defects, surfaces, grain boundaries, mixed stoichiometries, dopants, and interfaces. The atomistic description of the quantum dynamics of electron and hole trapping and recombination, provided by the time-domain ab initio simulations, generates important insights into the mechanisms of charge and energy losses and guides the development of high-performance perovskite solar cell devices.