1
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Xu M, Zhao C, Meng Z, Yan H, Chen H, Jiang Z, Jiang Z, Chen H, Meng L, Hui W, Su Z, Wang Y, Wang Z, Wang J, Gao Y, He Y, Meng H. Nonvolatile Memory Organic Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2307703. [PMID: 37812077 DOI: 10.1002/adma.202307703] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/28/2023] [Indexed: 10/10/2023]
Abstract
In the field of active-matrix organic light emitting display (AMOLED), large-size and ultra-high-definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light-emitting transistor (Fe-OLET) device which integrates the switching capability, light-emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe-OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof-of-concept device optimized through interfacial modification approach exhibits 20 times improved field-effect mobility and five times increased luminance. The integration of nonvolatile memory, switching and light-emitting capabilities within Fe-OLET provides a promising internal-storage-driving paradigm, thus creating a new pathway for deploying storage capacitor-free circuitry to improve the pixel aperture ratio and the integration density of circuits toward the on-chip advanced display applications.
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Affiliation(s)
- Meili Xu
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Changbin Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Zhimin Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hao Yan
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hongming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
| | - Zhixiang Jiang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhuonan Jiang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hong Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Lingqiang Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Wei Hui
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility, Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Yueyue Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Zhenhui Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Jianing Wang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Yuanhong Gao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Yaowu He
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
| | - Hong Meng
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
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2
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Dai Q, Pei M, Guo J, Wang Q, Hao Z, Wang H, Li Y, Li L, Lu K, Yan Y, Shi Y, Li Y. Integration of image preprocessing and recognition functions in an optoelectronic coupling organic ferroelectric retinomorphic neuristor. MATERIALS HORIZONS 2023; 10:3061-3071. [PMID: 37218409 DOI: 10.1039/d3mh00429e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The human visual system (HVS) has the advantages of a low power consumption and high efficiency because of the synchronous perception and early preprocessing of external image information in the retina, as well as parallel in-memory computing within the visual cortex. Realizing the biofunction simulation of the retina and visual cortex in a single device structure provides opportunities for performance improvements and machine vision system (MVS) integration. Here, we fabricate organic ferroelectric retinomorphic neuristors that integrate the retina-like preprocessing function and recognition of the visual cortex in a single device architecture. Benefiting from the electrical/optical coupling modulation of ferroelectric polarization, our devices show a bidirectional photoresponse that acts as the basis for mimicking retinal preconditioning and multi-level memory capabilities for recognition. The MVS based on the proposed retinomorphic neuristors achieves a high recognition accuracy of ∼90%, which is 20% higher than that of the incomplete system without the preprocessing function. In addition, we successfully demonstrate image encryption and optical programming logic gate functions. Our work suggests that the proposed retinomorphic neuristors offer great potential for MVS monolithic integration and functional expansion.
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Affiliation(s)
- Qinyong Dai
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Jianhang Guo
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Qijing Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Ziqian Hao
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Hengyuan Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yating Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Longfei Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Kuakua Lu
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yang Yan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures Nanjing University, Nanjing 210093, P. R. China.
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3
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Liu Z, Sun Y, Ding Y, Li M, Liu X, Liu Z, Chen Z. Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing. J Phys Chem Lett 2023:6784-6791. [PMID: 37478384 DOI: 10.1021/acs.jpclett.3c01463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects. Recently, emerging two-dimensional (2D) ferroelectrics have demonstrated their ability to maintain ferroelectricity at the nanoscale and have shown superior properties compared to three-dimensional ferroelectrics. Here, we report a ferroelectric field effect transistor composed of all 2D van der Waals (vdWs) heterostructures and provide a comprehensive study of the modulation of ferroelectric polarization on the carrier transport properties. Remarkably, the ferroelectric polarization allowed for achieving an ultralow subthreshold swing of just 26 mV/dec and a high carrier mobility of up to 72.3 cm2/(V s) at a smaller drain voltage of 10 mV. These impressive characteristics offer new insights into evaluating the regulatory effect of ferroelectric polarization on the electrical properties of all 2D vdWs heterostructures.
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Affiliation(s)
- Zhongyang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics & Microsystems, Chongqing 401332, China
| | - Yingtao Ding
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Mingjie Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiming Chen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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4
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Xia J, Qiu X, Liu Y, Chen P, Guo J, Wei H, Ding J, Xie H, Lv Y, Li F, Li W, Liao L, Hu Y. Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300133. [PMID: 36703612 PMCID: PMC10074105 DOI: 10.1002/advs.202300133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Indexed: 06/18/2023]
Abstract
Transparent field-effect transistors (FETs) are attacking intensive interest for constructing fancy "invisible" electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide-bandgap but generally demand sputtering technique or high-temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low-temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as the dielectric, which conquers the challenging issue of gate-electric-field screening effect in MHP FETs. Additionally, an ultra-thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n-type semi-transparent MAPbBr3 FETs and fully transparent MAPbCl3 FETs which can operate well at room temperature with mobility over 10-3 cm2 V-1 s-1 and on/off ratio >103 are achieved for the first time. The low-temperature solution processability of these FETs makes them particularly attractive for applications in low-cost, large-area transparent electronics.
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Affiliation(s)
- Jiangnan Xia
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Ping‐An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Huan Wei
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jiaqi Ding
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Haihong Xie
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yawei Lv
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Fuxiang Li
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and PerceptionInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai200433China
| | - Lei Liao
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
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5
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Hao Z, Wang H, Jiang S, Qian J, Xu X, Li Y, Pei M, Zhang B, Guo J, Zhao H, Chen J, Tong Y, Wang J, Wang X, Shi Y, Li Y. Retina-Inspired Self-Powered Artificial Optoelectronic Synapses with Selective Detection in Organic Asymmetric Heterojunctions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103494. [PMID: 35023640 PMCID: PMC8895149 DOI: 10.1002/advs.202103494] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Revised: 10/25/2021] [Indexed: 06/08/2023]
Abstract
The retina, the most crucial unit of the human visual perception system, combines sensing with wavelength selectivity and signal preprocessing. Incorporating energy conversion into these superior neurobiological features to generate core visual signals directly from incoming light under various conditions is essential for artificial optoelectronic synapses to emulate biological processing in the real retina. Herein, self-powered optoelectronic synapses that can selectively detect and preprocess the ultraviolet (UV) light are presented, which benefit from high-quality organic asymmetric heterojunctions with ultrathin molecular semiconducting crystalline films, intrinsic heterogeneous interfaces, and typical photovoltaic properties. These devices exhibit diverse synaptic behaviors, such as excitatory postsynaptic current, paired-pulse facilitation, and high-pass filtering characteristics, which successfully reproduce the unique connectivity among sensory neurons. These zero-power optical-sensing synaptic operations further facilitate a demonstration of image sharpening. Additionally, the charge transfer at the heterojunction interface can be modulated by tuning the gate voltage to achieve multispectral sensing ranging from the UV to near-infrared region. Therefore, this work sheds new light on more advanced retinomorphic visual systems in the post-Moore era.
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Affiliation(s)
- Ziqian Hao
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Hengyuan Wang
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Sai Jiang
- School of Microelectronics and Control EngineeringChangzhou UniversityChangzhou213164P. R. China
| | - Jun Qian
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Xin Xu
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Yating Li
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Mengjiao Pei
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Bowen Zhang
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Jianhang Guo
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Huijuan Zhao
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Jiaming Chen
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Yunfang Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced MaterialsNanjing Tech UniversityNanjing211816P. R. China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced MaterialsNanjing Tech UniversityNanjing211816P. R. China
| | - Xinran Wang
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Yi Shi
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
| | - Yun Li
- National Laboratory of Solid‐State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093P. R. China
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6
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Pei M, Wan C, Chang Q, Guo J, Jiang S, Zhang B, Wang X, Shi Y, Li Y. A Smarter Pavlovian Dog with Optically Modulated Associative Learning in an Organic Ferroelectric Neuromem. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9820502. [PMID: 35024616 PMCID: PMC8715308 DOI: 10.34133/2021/9820502] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Accepted: 11/14/2021] [Indexed: 12/21/2022]
Abstract
Associative learning is a critical learning principle uniting discrete ideas and percepts to improve individuals' adaptability. However, enabling high tunability of the association processes as in biological counterparts and thus integration of multiple signals from the environment, ideally in a single device, is challenging. Here, we fabricate an organic ferroelectric neuromem capable of monadically implementing optically modulated associative learning. This approach couples the photogating effect at the interface with ferroelectric polarization switching, enabling highly tunable optical modulation of charge carriers. Our device acts as a smarter Pavlovian dog exhibiting adjustable associative learning with the training cycles tuned from thirteen to two. In particular, we obtain a large output difference (>103), which is very similar to the all-or-nothing biological sensory/motor neuron spiking with decrementless conduction. As proof-of-concept demonstrations, photoferroelectric coupling-based applications in cryptography and logic gates are achieved in a single device, indicating compatibility with biological and digital data processing.
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Affiliation(s)
- Mengjiao Pei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Changjin Wan
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Qiong Chang
- School of Computing, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Jianhang Guo
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Sai Jiang
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou 213164, China
| | - Bowen Zhang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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7
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Jin R, Wang J, Shi K, Qiu B, Ma L, Huang S, Li Z. Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor. RSC Adv 2020; 10:43225-43232. [PMID: 35514915 PMCID: PMC9058139 DOI: 10.1039/d0ra08021g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2020] [Accepted: 11/18/2020] [Indexed: 11/24/2022] Open
Abstract
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes. A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).![]()
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Jin Wang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Lanchao Ma
- College of Materials Science and Engineering, Beijing Key Laboratory of Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology Beijing 102617 P. R. China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Zhengquan Li
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
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8
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Zhu H, Fu C, Mitsuishi M. Organic ferroelectric field‐effect transistor memories with
poly(vinylidene fluoride)
gate insulators and conjugated semiconductor channels: a review. POLYM INT 2020. [DOI: 10.1002/pi.6029] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Huie Zhu
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University Sendai Japan
| | - Chang Fu
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University Sendai Japan
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9
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Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Huilin Li
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
- Henan Key Laboratory of Photovoltaic MaterialsHenan University Kaifeng PR China
| | - Ruopeng Wang
- College of Electronics and Information EngineeringShenzhen University Shenzhen PR China
| | - Su‐Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University Shenzhen PR China
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