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Bellatreccia C, Ziani Z, Germinario A, Engelaar S, Battaglia FP, Gradone A, Villa M, Ceroni P. Dual Luminescent Mn(II)-Doped Cu-In-Zn-S Quantum Dots as Temperature Sensors in Water. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404425. [PMID: 39185802 DOI: 10.1002/smll.202404425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Revised: 08/07/2024] [Indexed: 08/27/2024]
Abstract
CuInS2 quantum dots have emerged in the last years as non-toxic alternative to traditional Pb and Cd based quantum dots, especially for biological applications. In this work, the hydrothermal synthesis of alloyed Cu-In-Zn-S quantum dots (CIZS) doped with manganese(II) is explored, with different metal ratios (Mn-CIZSy). The doped quantum dots show the sensitized emission of Mn2+ (approximately ms lifetime), together with the emission of the CIZS structure (approximately µs lifetime). The relative contribution of Mn2+ emission is highly dependent on the composition of the CIZS hosting structure (In:Cu ratio). In addition to that, it is shown that Mn2+ sensitization requires a threshold energy, which suggests the involvement of an intermediate state in the sensitization mechanism. The long-lived emission intensity decay of Mn2+ shows a stable and reversible temperature response in physiological conditions (25-45 °C, pH = 7.4). Mn-CIZSy quantum dots are thus interesting candidates as biological luminescent temperature probe thanks to their easy synthesis, high colloidal stability, insensitivity to dioxygen quenching and quantitative time-gated detection.
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Affiliation(s)
- Caterina Bellatreccia
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
| | - Zakaria Ziani
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
- CNRS, Laboratoire de Chimie de Coordination (LCC), 205 Rte de Narbonne, Toulouse, 31400, France
| | - Angelica Germinario
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
| | - Stijn Engelaar
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
| | - Filippo Piero Battaglia
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
| | - Alessandro Gradone
- Istituto per la Microelettronica ed i Microsistemi (IMM) - CNR Sede di Bologna, via Gobetti 101, Bologna, 40129, Italy
| | - Marco Villa
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
| | - Paola Ceroni
- Dipartimento di Chimica "Giacomo Ciamician", Alma Mater Studiorum - Università di Bologna, Via Selmi 2, Bologna, 40126, Italy
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2
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Shah SH, Debnath T. CuInS 2-Decorated Perovskite Nanoarchitecture: Halide-Driven Energy and Electron Transfer. J Phys Chem Lett 2024; 15:2580-2586. [PMID: 38416791 DOI: 10.1021/acs.jpclett.4c00007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
Perovskite nanocrystals (NCs) are an emergent and game-changing entrant in semiconductor research, yet the research on the corresponding nanoheterostructures remains in its infancy. In this work, we fabricate a type II nanoarchitecture of CsPbX3 NCs (where X = Cl, Br, or I) and CuInS2 quantum dots to investigate the energy and charge transfer (ET and CT, respectively) processes. Optical measurements of CsPbX3/CuInS2 show efficient photoluminescence (PL) quenching when X = Br or I, while the PL quenching efficiency of the X = Cl compound is 2 orders of magnitude lower. We argue the drastic PL quenching in the X = I compound is solely due to the CT process, while for the X = Br compound, a predominantly ET process is active. In contrast to the driving force (-ΔG) for the CT process, we observe the reverse order of the electron transfer process, for which we propose the electron transfer occurs in the Marcus inverted region. Our halide-dependent controlled regulation of CT and ET processes in these nanoarchitectures may find promising optoelectronic applications.
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Affiliation(s)
- Shamim H Shah
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
| | - Tushar Debnath
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
- Nano Physical Spectroscopy Group, Department of Chemistry, School of Natural Sciences, Shiv Nadar Institution of Eminence, Delhi NCR, Uttar Pradesh 201314, India
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3
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Lin O, Wang L, Xie X, Wang S, Feng Y, Xiao J, Zhang Y, Tang A. Seed-mediated growth synthesis and tunable narrow-band luminescence of quaternary Ag-In-Ga-S alloyed nanocrystals. NANOSCALE 2024; 16:4591-4599. [PMID: 38356393 DOI: 10.1039/d3nr06037c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Silver-based I-III-VI-type semiconductor nanocrystals have received extensive attention due to their narrow-band luminescence properties. Herein, we demonstrated a seed-mediated growth of quaternary Ag-In-Ga-S (AIGS) nanocrystals (NCs) with narrow-band luminescence. By conducting partial cation exchange with In3+ and Ga3+ based on Ag2S NCs and controlling the Ag/In feeding ratios (0.25 to 2) of Ag-In-S seeds as well as the inventory of 1-dodecanethiol, we achieved optimized luminescence performance in the synthesized AIGS NCs, characterized by a narrow full width at half maximum of less than 40 nm. Meanwhile, narrow-band luminescent AIGS NCs exhibit a tetragonal AgGaS2 crystal structure and a gradient alloy structure, rather than a core-shell structure. Most importantly, the kinetics decay curves of time-resolved photoluminescence and the ground state bleaching in transient absorption generally agree with each other regarding the lifetime of the second decay component, which indicates that the narrow-band luminescence is due to the slow radiative recombination between trapped electrons and trapped holes located at the edge of the conduction band and the deep silver-related trap states (e.g., silver vacancy), respectively. This study provides new insights into the correlation between the narrow-band luminescence properties and the structural characteristics of AIGS NCs.
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Affiliation(s)
- Ouyang Lin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Lijin Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Xiulin Xie
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Shuaibing Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Yibo Feng
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Jiawen Xiao
- Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yu Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China.
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4
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Bhattacharya D, Bhakat A, Debnath T. Breaking AgInTe 2 Quantum Dot Chain to Fabricate AgInTe 2-ZnS Janus Nanocrystals. Inorg Chem 2023. [PMID: 38010257 DOI: 10.1021/acs.inorgchem.3c03156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Colloidal multinary chalcogenides (MnCs) have emerged as excellent optoelectronic materials, where S- and Se-based MnCs show considerable progress; however, the Te counterpart suffers from detrimental surface oxidation. Moreover, Te-based I-III-VI MnCs (e.g., AgInTe2) tend to form a one-dimensional (1-D) anisotropic structure via the self-assembly of surface-oxidized Te, thus restricting the isolation of AgInTe2 quantum dots (QDs). We report successful control of the self-assembly of Te-based MnCs to arrest the growth of AgInTe2 QDs by using a synergistic capping agent (dodecanethiol and oleic acid). The reaction proceeds with several intermediates, including hexagonal microrods (MR), tetragonal QDs in a chain arrangement, and tetragonal MRs. Importantly, we note that the incorporation of ZnS QDs triggers the breaking of the chain arrangement of the AgInTe2 QDs and the emergence of evenly distributed AgInTe2-ZnS Janus nanocrystals with significantly reduced long-term Te-oxidative properties. Arresting the AgInTe2 QD chain and the subsequent Janus nanocrystal formation could have promising opportunities for 1-D charge hopping and efficient charge transport for optoelectronic applications, respectively.
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Affiliation(s)
- Debadrita Bhattacharya
- Centre for Nanotechnology, Indian Institute of Technology, Guwahati, Assam 781039, India
| | - Arin Bhakat
- Department of Chemistry, Indian Institute of Technology, Guwahati, Assam 781039, India
| | - Tushar Debnath
- Centre for Nanotechnology, Indian Institute of Technology, Guwahati, Assam 781039, India
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5
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Barfüßer A, Rieger S, Dey A, Tosun A, Akkerman QA, Debnath T, Feldmann J. Confined Excitons in Spherical-Like Halide Perovskite Quantum Dots. NANO LETTERS 2022; 22:8810-8817. [PMID: 36251337 DOI: 10.1021/acs.nanolett.2c02223] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Quantum dots (QDs) offer unique physical properties and novel application possibilities like single-photon emitters for quantum technologies. While strongly confined III-V and II-VI QDs have been studied extensively, their complex valence band structure often limits clear observations of individual transitions. In recently emerged lead-halide perovskites, band degeneracies are absent around the bandgap reducing the complexity of optical spectra. We show that for spherical-like CsPbBr3 QDs with diameters >6 nm, excitons confine with respect to their center-of-mass motion leading to well-pronounced resonances in their absorption spectra. Optical pumping of the lowest-confined exciton with femtosecond laser pulses not only bleaches all excitons but also reveals a series of distinct induced absorption resonances which we attribute to exciton-to-biexciton transitions and are red-shifted by the biexciton binding energy (∼40 meV). The temporal dynamics of the bleached excitons further support our exciton confinement model. Our study provides the first insight into confined excitons in CsPbBr3 QDs and gives a detailed understanding of their linear and nonlinear optical spectra.
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Affiliation(s)
- Anja Barfüßer
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Sebastian Rieger
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Amrita Dey
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Ahmet Tosun
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Quinten A Akkerman
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Tushar Debnath
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
| | - Jochen Feldmann
- Chair for Photonics and Optoelectronics, Nano-Institute Munich and Department of Physics, Ludwig-Maximilians-Universität (LMU), Königinstrasse 10, 80539Munich, Germany
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6
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Wu L, Hua X, Li Y, Zhang Y, Xue X, Deng H, Luo Z, Zhang Y. Aggregation-based phase transition tailored heterophase junctions of AgInS 2 for boosting photocatalytic H 2 evolution. J Colloid Interface Sci 2022; 628:721-730. [PMID: 36027782 DOI: 10.1016/j.jcis.2022.08.114] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2022] [Revised: 08/12/2022] [Accepted: 08/16/2022] [Indexed: 11/16/2022]
Abstract
Due to high defect tolerance and multiphase allowance, AgInS2 (AIS) quantum dots (QDs) provide chances for designing new type junctions via tailoring defects, size, or phase structure. These new type junctions potentially enhance photoelectric performance, such as photocatalytic H2 evolution (PHE). Here, ultra-small AIS QDs (∼1 nm) with well-defined exciton absorption were prepared aqueously via a reverse hot-injection procedure for the first time. A coalescence or fast aggregation-based growth was observed for coarsening at 95 or 135 ℃, respectively. XRD and TEM investigations revealed that the tetragonal-orthorhombic (t-o) phase transition occurred via aggregation-based growth. The studies on phase transition kinetics resulted in fine-tailoring on AIS polymorphs, favoring t-o AIS junctions. UV-vis absorption spectra confirm the double absorption edge of the t-o heterophase junction with enhanced visible absorption. Steady and transient PL spectra suggest improvements in carriers' separation/transfer in this t-o junction. As a result, the optimized t-o AIS shows superior photocatalytic H2 evolution rates of 1022 μmol. g-1. h-1, 51.1 times that of t-AIS or 3.8 times that of o-AIS. This work is expected to provide new insight for designing ternary alloyed QDs with strongly coupled interfaces for effective H2 generations.
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Affiliation(s)
- Longyan Wu
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Xianhao Hua
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Yu Li
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Yuxin Zhang
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Xiaogang Xue
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China; School of Optoelectronic Engineering, Guangxi Key Laboratory of Optoelectronic Information Processing, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China; State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China.
| | - Honggao Deng
- School of Optoelectronic Engineering, Guangxi Key Laboratory of Optoelectronic Information Processing, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Zhenggang Luo
- School of Materials Science and Engineering, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
| | - Yuting Zhang
- School of Optoelectronic Engineering, Guangxi Key Laboratory of Optoelectronic Information Processing, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China.
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7
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Korepanov O, Aleksandrova O, Firsov D, Kalazhokov Z, Kirilenko D, Kozodaev D, Matveev V, Mazing D, Moshnikov V. Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS 2 Quantum Dots. NANOMATERIALS 2022; 12:nano12142357. [PMID: 35889581 PMCID: PMC9321260 DOI: 10.3390/nano12142357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 06/30/2022] [Accepted: 07/07/2022] [Indexed: 02/04/2023]
Abstract
A synthesis protocol of polyvinylpyrrolidone-capped AgInS2 quantum dots in aqueous solution is reported. Nanoparticle morphology and chemical composition were studied by means of TEM, XRD, XPS, and FTIR. The obtained quantum dots were luminescent in the visible range. The photoluminescence intensity dependence on the polyvinylpyrrolidone amount was demonstrated. The wavelength of the emission maximum varied with changing the [Ag]:[In] molar ratio. The temperature dependence of the photoluminescence intensity of the polyvinylpyrrolidone-capped AgInS2 quantum dots was investigated within the temperature range of 11-294 K.
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Affiliation(s)
- Oleg Korepanov
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
- Correspondence:
| | - Olga Aleksandrova
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
| | - Dmitrii Firsov
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
| | - Zamir Kalazhokov
- Institute of Physics and Mathematics, Kabardino-Balkarian State University, n.a. Kh.M. Berbekov, 360004 Nalchik, Russia;
- Institute of Computer Science and Problems of Regional Management, Kabardino-Balkar Scientific Center, Russian Academy of Science, 360004 Nalchik, Russia
| | | | - Dmitriy Kozodaev
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
- NT-MDT BV, 7335 Apeldoorn, The Netherlands
| | - Vasilii Matveev
- Petersburg Nuclear Physics Institute Named by B.P.Konstantinov of NRC «Kurchatov Institute», 188300 Gatchina, Russia;
| | - Dmitriy Mazing
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
| | - Vyacheslav Moshnikov
- Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University “LETI”, 197022 Saint Petersburg, Russia; (O.A.); (D.F.); (D.K.); (D.M.); (V.M.)
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8
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Harvey SM, Houck DW, Liu W, Liu Y, Gosztola DJ, Korgel BA, Wasielewski MR, Schaller RD. Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe 2 Nanocrystals. ACS NANO 2021; 15:19588-19599. [PMID: 34806353 DOI: 10.1021/acsnano.1c06625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
CuInSe2 nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe2 nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.
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Affiliation(s)
- Samantha M Harvey
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States
| | - Daniel W Houck
- McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Wen Liu
- McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Yuzi Liu
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - David J Gosztola
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Brian A Korgel
- McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Michael R Wasielewski
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States
| | - Richard D Schaller
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
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9
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Hinterding SM, Mangnus MJJ, Prins PT, Jöbsis HJ, Busatto S, Vanmaekelbergh D, de Mello Donega C, Rabouw FT. Unusual Spectral Diffusion of Single CuInS 2 Quantum Dots Sheds Light on the Mechanism of Radiative Decay. NANO LETTERS 2021; 21:658-665. [PMID: 33395305 PMCID: PMC7809691 DOI: 10.1021/acs.nanolett.0c04239] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The luminescence of CuInS2 quantum dots (QDs) is slower and spectrally broader than that of many other types of QDs. The origin of this anomalous behavior is still under debate. Single-QD experiments could help settle this debate, but studies by different groups have yielded conflicting results. Here, we study the photophysics of single core-only CuInS2 and core/shell CuInS2/CdS QDs. Both types of single QDs exhibit broad PL spectra with fluctuating peak position and single-exponential photoluminescence decay with a slow but fluctuating lifetime. Spectral diffusion of CuInS2-based QDs is qualitatively and quantitatively different from CdSe-based QDs. The differences reflect the dipole moment of the CuInS2 excited state and hole localization on a preferred site in the QD. Our results unravel the highly dynamic photophysics of CuInS2 QDs and highlight the power of the analysis of single-QD property fluctuations.
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Affiliation(s)
- Stijn
O. M. Hinterding
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
- Inorganic
Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584CG Utrecht, The Netherlands
| | - Mark J. J. Mangnus
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
- Inorganic
Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584CG Utrecht, The Netherlands
| | - P. Tim Prins
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Huygen J. Jöbsis
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Serena Busatto
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Daniël Vanmaekelbergh
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Celso de Mello Donega
- Condensed
Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Freddy T. Rabouw
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
- Inorganic
Chemistry and Catalysis, Debye Institute for Nanomaterials Science, Utrecht University, Universiteitsweg 99, 3584CG Utrecht, The Netherlands
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10
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Shukla A, Kaur G, Babu KJ, Ghorai N, Goswami T, Kaur A, Ghosh HN. Effect of Confinement on the Exciton and Biexciton Dynamics in Perovskite 2D-Nanosheets and 3D-Nanocrystals. J Phys Chem Lett 2020; 11:6344-6352. [PMID: 32663017 DOI: 10.1021/acs.jpclett.0c01853] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The performance of the high-end optoelectronic devices is essentially influenced by the intrinsic relaxation mechanisms pursued by the hot carriers. Therefore, the key toward achieving progression in such fields lies in developing a complete understanding of the involved carrier cooling dynamics. In this work, an endeavor has been made to highlight the difference in the cooling mechanisms in 2D CsPbBr3 nanosheets (NSs) and their 3D counterpart nanocrystals (NCs) with the aid of femtosecond broad-band pump-probe spectroscopy, varying the excitation energies. The exciton and biexciton dynamics in both systems are found to be retarded upon increasing the excitation energy. However, in contrast to 3D NCs, carrier cooling is found to be faster in the 2D system, regardless of the excitation energy used, attributing this to less efficient charge screening by Fröhlich interaction in low-dielectric medium. A similar trend is replicated in the biexciton formation rate since the formation is also found to be faster in NSs compared to NCs.
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Affiliation(s)
- Ayushi Shukla
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - Gurpreet Kaur
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - K Justice Babu
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - Nandan Ghorai
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - Tanmay Goswami
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - Arshdeep Kaur
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
| | - Hirendra N Ghosh
- Institute of Nano Science and Technology, Mohali, Punjab 160062, India
- Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085, India
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