High-Performance Ultra-Short Channel Field-Effect Transistor Using Solution-Processable Colloidal Nanocrystals

Molecular-Switch-Embedded Solution-Processed Semiconductors

Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.

Chemical Transformations of Colloidal Semiconductor Nanocrystals Advance Their Applications

Recently, colloidal semiconductor nanocrystals (NCs) are finding more and more applications in optoelectronic devices. Their usage, however, is still very far from the great potential already demonstrated in many fields owing to their unique features. While researchers are still struggling to achieve a wider gamut of different semiconductor nanomaterials with more controllable properties, the library of already existing candidates is large enough to harness their potential. Modification of well-studied semiconductor NCs by means of their chemical transformations can greatly advance their practical exploitation. In this Perspective, the main types of chemical transformations represented by ligand and cation exchange reactions and their recent examples are summarized. While ligand exchange is used to adjust the surface of a semiconductor NC, cation exchange allows us to engineer its core composition. Both approaches greatly extend the range of properties of the resulting nanomaterials, advancing their further incorporation into optoelectronic devices.

Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices

Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al₂ O₃ ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d^-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Evolution of low-dimensional material-based field-effect transistors

Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.

Microfluidic tank assisted nicotine sensing property of field effect transistor composed of an atomically thin MoS2 channel

We investigated the sensor behavior of a field effect transistor, the channel of which is made of atomically thin MoS2 layers, focusing on the interaction of the MoS2 channel with the solution containing target molecules. For this purpose, we made a newly designed device in which the mask covered the electrodes of the source and the drain in order to make the solution contact only with the channel. In addition, a micro-fluid tank was fabricated above the channel as a solution reservoir. We examined the FET properties of this device for the sensing of the nicotine molecule for the development of a detection system for this molecule in the human body under in vivo conditions. We detected the sensor behavior both for the drop-cast process and for the condition where the channel contacts with the solution. The drain-current vs. gate-voltage variation of the MoS2-FET with the attachment of the nicotine molecule was clearly observed for both cases. For the latter case, the threshold voltage shifted in the negative gate-voltage direction with the increase of the concentration of the nicotine in the solution. This can be explained by the electron transfer from the molecule to the MoS2 channel, which was further confirmed by analyzing the X-ray photoemission spectroscopy and Raman spectroscopy together with the DFT calculation. The sensor can detect the variation of the nicotine concentration in the IPA solution by detecting the Vth change of the MoS2-FET.