Designing Two-Dimensional Properties in Three-Dimensional Halide Perovskites via Orbital Engineering

Organic Cation Modulation in Manganese Halides to Optimize Crystallization Process and X-Ray Response Toward Large-Area Scintillator Screen

Manganese halides are one of the most potential candidates for large-area flat-panel detection owing to their biological safety and all-solution preparation. However, reducing photon scattering and enhancing the efficient luminescence of scintillator screens remains a challenge due to their uncontrollable crystallization and serious nonradiative recombination. Herein, an organic cation modulation is reported to control the crystallization process and enhance the luminescence properties of manganese halides. Given the industrial requirements of the X-ray flat-panel detector, the large-area A2MnBr4 screen (900 cm2) with excellent uniformity is blade-coated at 60 °C. Theoretical calculations and in situ measurements reveal that organic cations with larger steric hindrance can slow down the crystallization of the screen, thus neatening the crystal arrangement and reducing the photon scattering. Moreover, larger steric hindrance can also endow the material with higher exciton binding energy, which is beneficial for restraining nonradiative recombination. Therefore, the BPP2MnBr4 (BPP = C25H22P+) screen with larger steric hindrance exhibits a superior spatial resolution (>20 lp mm-1) and ultra-low detection limit (< 250 nGyair s-1). This is the first time steric hindrance modulation is used in blade-coated scintillator screens, and it believes this study will provide some guidance for the development of high-performance manganese halide scintillators.

Current Understanding of Band-Edge Properties of Halide Perovskites: Urbach Tail, Rashba Splitting, and Exciton Binding Energy

The band-edge structure of halide perovskites, derived from the hybridization of atomic orbitals, plays a fundamental role in determining their optical and electronic properties. Several important concepts have been frequently discussed to describe the influence of band-edge structure on their optoelectronic properties, including Urbach tail, Rashba splitting, and exciton binding energy. In this Perspective, we provide a fundamental understanding of these concepts, with the focus on their dependence on composition, structure, or dimensionality. Subsequently, the implications for material optimization and device fabrication are discussed. Furthermore, we highlight the Rashba effect on the exciton fine structure in perovskite nanocrystals (PNCs), which explains the unique emissive properties. Finally, we discuss the potential influence of band-edge properties on the light emission process. We hope that this Perspective can inspire the investigation of band-edge properties of halide perovskites for light-emitting diodes, lasers, and spin electronics.

Theoretical Prediction of Mixed-Valence Layered Halide Perovskites Cs4M(IV)M(II)2X12 (M = Ge, Sn; X = Cl, Br)

Charge-ordered compounds (i.e., Cu⁺/Cu²⁺, Au⁺/Au³⁺, In⁺/In³⁺, Tl⁺/Tl³⁺, Sb³⁺/Sb⁵⁺, and Bi³⁺/Bi⁵⁺) have been widely explored because of their unique physical properties. Here, a new class of ⟨111⟩-oriented mixed-valence layered halide perovskites Cs₄M(IV)M(II)₂X₁₂ (M = Ge, Sn; X = Cl, Br) with C2/m, R-3m, and I41/amd space groups was predicted by first-principles calculations. Based on the decomposition enthalpy, the phonon spectrum, and the mechanical stability criteria, we found that Cs₄GeGe₂Cl₁₂ (C2/m and R-3m), Cs₄GeGe₂Br₁₂ (R-3m), and Cs₄GeGe₂Br₆Cl₆ (R-3m) exhibit thermodynamic, dynamical, and mechanical stability. The electronic structure calculations show that the predicted band gap of stable Cs₄Ge(IV)Ge(II)₂X₁₂ varies from 1.16 to 2.25 eV. And an isolated intermediate conduction band contributed by the Ge(IV) 4s states below the Ge(II)/Ge(IV) 4p states is observed in these compounds, which is similar to previously reported Cs₄CuSb₂Cl₁₂ but different from Cs₄CdM(III)₂Cl₁₂ (M = Sb, Bi). In addition, the calculated static dielectric constant and optical absorption coefficient of Cs₄GeGe₂Br₁₂ are close to those of typical double perovskites (e.g., Cs₂AgBiBr₆). We believe that our work enriches the family of mixed-valence halide perovskites and provides a new platform for potential optoelectronic semiconductor design.

Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy Design

The alloy strategy through the A- or X-site is a common method for experimental preparation of high-performance and stable lead-based perovskite solar cells. As one of the important candidates for lead-free and stable photovoltaic absorbers, the inorganic antiperovskite family has recently been reported to exhibit excellent optoelectronic properties. However, the current reports on the design of antiperovskite alloys are rare. In this work, we investigated the previously overlooked electronic property (e.g., conduction band convergence), static dielectric constant, and exciton binding energy in inorganic antiperovskite nitrides by first-principles calculations. Then, we revealed a linear relationship between the tolerance factor and various physical quantities. Guided by the established structure-composition-property relationship in six antiperovskite nitrides X₃NA (X²⁺ = Mg²⁺, Ca²⁺, Sr²⁺; A^3- = P^3-, As^3-, Sb^3-, Bi^3-), for the first time, we designed a promising antiperovskite alloy Mg₃NAs_0.5Bi_0.5 with a quasi-direct band gap of 1.402 eV. Finally, we made a comprehensive comparison between antiperovskite nitrides and conventional halide perovskites for pointing out the future direction for device applications.

Defect engineering of oxide perovskites for catalysis and energy storage: synthesis of chemistry and materials science

Oxide perovskites have emerged as an important class of materials with important applications in many technological areas, particularly thermocatalysis, electrocatalysis, photocatalysis, and energy storage. However, their implementation faces numerous challenges that are familiar to the chemist and materials scientist. The present work surveys the state-of-the-art by integrating these two viewpoints, focusing on the critical role that defect engineering plays in the design, fabrication, modification, and application of these materials. An extensive review of experimental and simulation studies of the synthesis and performance of oxide perovskites and devices containing these materials is coupled with exposition of the fundamental and applied aspects of defect equilibria. The aim of this approach is to elucidate how these issues can be integrated in order to shed light on the interpretation of the data and what trajectories are suggested by them. This critical examination has revealed a number of areas in which the review can provide a greater understanding. These include considerations of (1) the nature and formation of solid solutions, (2) site filling and stoichiometry, (3) the rationale for the design of defective oxide perovskites, and (4) the complex mechanisms of charge compensation and charge transfer. The review concludes with some proposed strategies to address the challenges in the future development of oxide perovskites and their applications.

Band-Edge Orbital Engineering of Perovskite Semiconductors for Optoelectronic Applications

Lead (Pb) halide perovskites have achieved great success in recent years because of their excellent optoelectronic properties, which is largely attributed to the lone-pair s orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of ns²-containing (i.e., Sn²⁺, Sb³⁺, and Bi³⁺) Pb-free perovskite alternatives have been explored as potential photovoltaic candidates. On the other hand, based on the band-edge orbital components (i.e., M²⁺ s and p/X^- p orbitals), a series of strategies have been proposed to optimize their optoelectronic properties by modifying the atomic orbitals and orbital interactions. Therefore, understanding the band-edge electronic features from the recently reported halide perovskites is essential for future material design and device optimization. This Perspective first attempts to establish the band-edge orbital-property relationship using a chemically intuitive approach and then rationalizes their superior properties and explains the trends in electronic properties. We hope that this Perspective will provide atomic-level guidance and insights toward the rational design of perovskite semiconductors with outstanding optoelectronic properties.

Recent Advancements in Crystalline Pb-Free Halide Double Perovskites

Lead halide perovskites have gained more and more attention because of their ease of synthesis and excellent photoelectric properties including a large absorption coefficient, long carrier lifetime, long carrier diffusion length, and high carrier mobility. However, their toxicity, instability, and phase degradation in ambient environments impede their large-scale applications. To address these concerns, it is desirable to find stable alternative halide perovskites without toxicity and with comparable optoelectronic properties to lead-based perovskites. Over the years, a considerable number of lead-free halide perovskites have been added to this family of materials, including A2B’B’’X6, A2BX6, and A3B2X9 type perovskites. Among these, double perovskites with the general formula A2B’B’’X6 are deemed to be a potential alternative to lead halide perovskites as they possess good stability under ambient conditions and excellent optoelectronic properties. In this review, recent progress in exploring Pb-free halide double perovskites is highlighted. The synthesis, composition-tuning, physical properties, and applications of representative 3D, 2D, and nanocrystal A2B’B’’X6 double perovskites are introduced. In addition, perspectives about current challenges and solutions in this field are also provided.