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For: Ghosal S. Exclusion-Enrichment Effect in Ionic Transistors. Langmuir 2020;36:3308-3314. [PMID: 32163711 DOI: 10.1021/acs.langmuir.0c00164] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Number Cited by Other Article(s)
1
Mei T, Liu W, Xu G, Chen Y, Wu M, Wang L, Xiao K. Ionic Transistors. ACS NANO 2024. [PMID: 38285731 DOI: 10.1021/acsnano.3c06190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2024]
2
Pandey D, Bhattacharyya S, Ghosal S. Charge Selectivity of an Ionic Transistor. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021;37:4571-4577. [PMID: 33825463 DOI: 10.1021/acs.langmuir.1c00177] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
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