1
|
Wei X, Zhang Q, Cui Z, Yang D, Mei S, Zhang W, Xie H, Yu K, Guo R, Wei W. Mapping the Identity of Transition Metal Doping and Surface Passivation in Indium Phosphide with Theoretical Calculation. Inorg Chem 2023; 62:15258-15266. [PMID: 37671490 DOI: 10.1021/acs.inorgchem.3c02455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Understanding the electronic structure of doped InP quantum dots (QDs) is essential to optimize the material for specific optoelectronic applications. However, current synthesis approaches are often tedious and unfavorable for rational tunning. Herein, a combination of experimental and computational studies was conducted to address the doping mechanism and surface passivation of InP QDs. The successful dopant introduction requires low Cu doping concentration and heavy Mn doping, while the Ag doping amount is relatively moderate. This may correspond to the theoretical doping formation energy presented as Cu (-2.52 eV) < Ag (-1.76 eV) < Mn (-0.38 eV). As for surface passivation, inorganic ions and shell-like ZnS are unraveled through simulational investigation. Chloride ion promotes oriented growth toward tetrahedron morphology while nitrate-passivated InP QDs exhibit blurry transmission electron microscope (TEM) morphology. Correspondingly, the binding energy of chloride ion with (111) facet is -2.13 eV significantly lower than those of (110) and (100) facets. Further, the additional Zn 3d bands are more involved in the formation of conduction band, which optimized the Mn-doped InP with a 0.32 eV bandgap. These experimental and model results provide more microscopic details of doped InP, which can motivate theoretically exact control of guest ion stoichiometry with optimized characteristics for electrical devices.
Collapse
Affiliation(s)
- Xian Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Qi Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongjie Cui
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Dan Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Shiliang Mei
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Wanlu Zhang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Haijiao Xie
- Hangzhou Yanqu Information Technology Co., Ltd., Y2, 2nd Floor, Building 2, Xixi Legu Creative Pioneering Park, No. 712 Wen'er West Road, Hangzhou 310003, China
| | - Kehan Yu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
- Zhongshan-Fudan Joint Innovation Center, Zhongshan 528437, China
- Yiwu Research Institute of Fudan University, Yiwu 322000, China
| | - Wei Wei
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| |
Collapse
|
2
|
Murugan S, Ashokkumar M, Sakthivel P, Choi D. Sulfur deficiency mediated visible emission of ZnS QDs by magnesium dopant and their application in waste water treatment. Heliyon 2023; 9:e17947. [PMID: 37496904 PMCID: PMC10366396 DOI: 10.1016/j.heliyon.2023.e17947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 06/28/2023] [Accepted: 07/03/2023] [Indexed: 07/28/2023] Open
Abstract
The photocatalyst with antimicrobial activity serves as a better candidate material for wastewater treatment, as wastewater contains microbes, hazardous dyes, and heavy metals. Hence, the present study extensively examines the photocatalytic and antibacterial activities against two waterborne bacterial strains, namely Salmonella typhi and Escherichia coli. Pure and Mg-doped ZnS (Mg:ZnS) quantum dots (QDs) were synthesized using a low-cost and simple co-precipitation method. The QDs' structural, surface morphology, chemical purity, and optical characteristics were analyzed through XRD, SEM, EDAX, TEM, UV-visible, and photoluminescence spectra. The incorporation of Mg dopants did not introduce significant alterations to the cubic blende structure of ZnS, nor did it induce substantial changes in the structural parameters. However, the QDs exhibited a slight sulfur deficiency, which was further increased by the presence of Mg dopant. The Mg dopant, due to its dominant compositional effect, reduced the band gap. Several optical emission bands were observed in the UV, violet, blue, and green regions, corresponding to NBE emission, sulfur-related defects, and Zn-related defects. Initially, Mg doping enhanced visible emission related to defects, while NBE emission was suppressed by the Mg dopant. However, increasing the concentration of the Mg dopant led to a slight increase in NBE emission. The Mg dopant enhanced the photocatalytic activity of the QDs, and a strong correlation was found between photocatalytic activity and NBE emission. The presence of the Mg dopant led to an increased rate of ROS-based decolorization by reducing the electron-hole recombination rate.
Collapse
Affiliation(s)
- S. Murugan
- Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Saveetha University, Thandalam, Chennai - 602 105, India
| | - M. Ashokkumar
- Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Saveetha University, Thandalam, Chennai - 602 105, India
| | - P. Sakthivel
- Centre for Materials Science, Department of Physics, Faculty of Engineering, Karpagam Academy of Higher Education, Coimbatore - 641 021, Tamil Nadu, India
| | - Dongjin Choi
- Department of Materials Science and Engineering, Hongik University, 2639-Sejong-ro,Jochiwon-eup, Sejong-city, 30016, South Korea
| |
Collapse
|
3
|
Ren C, Hu D, Cui Y, Chen P, Xu X, Cheng J, He T. Ag-doped InP/ZnS quantum dots for type-I photosensitizers. Chem Commun (Camb) 2023; 59:2311-2314. [PMID: 36748302 DOI: 10.1039/d2cc06119h] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
Water-soluble Ag-doped InP/ZnS quantum dots (QDs) with high photoluminescence quantum yield were synthesized and characterized. Their maximum two- and three-photon absorption cross sections are determined as ∼1.7 × 104 GM at 820 nm and ∼1.7 × 10-76 cm6 s2 photon-2 at 1260 nm. Importantly, for the first time, we demonstrated that Ag-doped InP/ZnS QDs can be used for type-I photodynamic therapy and are more suitable for the hypoxic environment of tumors.
Collapse
Affiliation(s)
- Can Ren
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Die Hu
- Key Laboratory of Cell Biology, Ministry of Public Health and Key Laboratory of Medical Cell Biology, Ministry of Education, China Medical University, Shenyang 110122, China.
| | - Yanyan Cui
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Peixian Chen
- Key Laboratory of Cell Biology, Ministry of Public Health and Key Laboratory of Medical Cell Biology, Ministry of Education, China Medical University, Shenyang 110122, China.
| | - Xiaoqian Xu
- Key Laboratory of Cell Biology, Ministry of Public Health and Key Laboratory of Medical Cell Biology, Ministry of Education, China Medical University, Shenyang 110122, China.
| | - Jiaji Cheng
- School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
| | - Tingchao He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| |
Collapse
|
4
|
Hahn RVH, Rodríguez-Bolívar S, Rodosthenous P, Skibinsky-Gitlin ES, Califano M, Gómez-Campos FM. Optical Absorption in N-Dimensional Colloidal Quantum Dot Arrays: Influence of Stoichiometry and Applications in Intermediate Band Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3387. [PMID: 36234515 PMCID: PMC9565355 DOI: 10.3390/nano12193387] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 09/21/2022] [Accepted: 09/22/2022] [Indexed: 06/16/2023]
Abstract
We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and surface stoichiometry motivated by the rapid development of experimental techniques to achieve high periodicity and colloidal quantum dot characteristics. The homogeneous response of colloidal quantum dot arrays to different light polarizations is also investigated. Our results shed light on the optical behaviour of these novel multi-dimensional nanomaterials and identify some of them as ideal building blocks for intermediate band solar cells.
Collapse
Affiliation(s)
- Rebeca V. H. Hahn
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Salvador Rodríguez-Bolívar
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Panagiotis Rodosthenous
- Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
| | - Erik S. Skibinsky-Gitlin
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| | - Marco Califano
- Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK
| | - Francisco M. Gómez-Campos
- Departamento de Electrónica y Tecnología de los Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
| |
Collapse
|
5
|
Cui Z, Mei S, Wen Z, Yang D, Qin S, Xiong Z, Yang B, He H, Bao R, Qiu Y, Chen Y, Zhang W, Xie F, Xing G, Guo R. Synergistic Effect of Halogen Ions and Shelling Temperature on Anion Exchange Induced Interfacial Restructuring for Highly Efficient Blue Emissive InP/ZnS Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2108120. [PMID: 35253372 DOI: 10.1002/smll.202108120] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
InP quantum dots (QDs) have attracted much attention owing to their nontoxic properties and shown great potential in optoelectronic applications. Due to the surface defects and lattice mismatch, the interfacial structure of InP/ZnS QDs plays a significant role in their performance. Herein, the formation of In-S and Sx -In-P1-x interlayers through anion exchange at the shell-growth stage is revealed. More importantly, it is proposed that the composition of interface is dependent on the synergistic effect of halogen ions and shelling temperature. High shelling temperature contributes to the optical performance improvement resulting from the formation of interlayers, besides the thicker ZnS shell. Moreover, the effect relates to the halogen ions where I- presents more obvious enhancement than Br- and Cl- , owing to their different ability to coordinate with In dangling bonds, which are inclined to form In-S and Sx -In-P1-x bonds. Further, the anion exchange under I- -rich environment causes a blue-shift of emission wavelength with shelling temperature increasing, unobserved in a Cl- - or Br- -rich environment. It contributes to the preparation of highly efficient blue emissive InP/ZnS QDs with emission wavelength of 473 nm, photoluminescence quantum yield of ≈50% and full width at half maximum of 47 nm.
Collapse
Affiliation(s)
- Zhongjie Cui
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shiliang Mei
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhuoqi Wen
- Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China
| | - Dan Yang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shuaitao Qin
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Zhiyong Xiong
- Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China
| | - Bobo Yang
- School of Science, Shanghai Institute of Technology, Shanghai, 201418, China
| | - Haiyang He
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Rui Bao
- Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China
| | - Yi Qiu
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Yuanyuan Chen
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Wanlu Zhang
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Fengxian Xie
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Zhongshan-Fudan Joint Innovation Center, Zhongshan, 528437, China
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, 999078, China
| | - Ruiqian Guo
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, 200433, China
- Zhongshan-Fudan Joint Innovation Center, Zhongshan, 528437, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, 322000, China
| |
Collapse
|