Single Layer Surface-Grafted PMMA as a Negative-Tone e-Beam Resist

Electron beam lithography on nonplanar and irregular surfaces

E-beam lithography is a powerful tool for generating nanostructures and fabricating nanodevices with fine features approaching a few nanometers in size. However, alternative approaches to conventional spin coating and development processes are required to optimize the lithography procedure on irregular surfaces. In this review, we summarize the state of the art in nanofabrication on irregular substrates using e-beam lithography. To overcome these challenges, unconventional methods have been developed. For instance, polymeric and nonpolymeric materials can be sprayed or evaporated to form uniform layers of electron-sensitive materials on irregular substrates. Moreover, chemical bonds can be applied to help form polymer brushes or self-assembled monolayers on these surfaces. In addition, thermal oxides can serve as resists, as the etching rate in solution changes after e-beam exposure. Furthermore, e-beam lithography tools can be combined with cryostages, evaporation systems, and metal deposition chambers for sample development and lift-off while maintaining low temperatures. Metallic nanopyramids can be fabricated on an AFM tip by utilizing ice as a positive resistor. Additionally, Ti/Au caps can be patterned around a carbon nanotube. Moreover, 3D nanostructures can be formed on irregular surfaces by exposing layers of anisole on organic ice surfaces with a focused e-beam. These advances in e-beam lithography on irregular substrates, including uniform film coating, instrumentation improvement, and new pattern transferring method development, substantially extend its capabilities in the fabrication and application of nanoscale structures.

Exceptional Light Sensitivity by Thiol-Ene Click Lithography

Lithographic patterning, which utilizes the solubility switch of photoresists to convert optical signals into nanostructures on the substrate, is the primary top-down approach for nanoscale fabrication. However, the low light/electron-energy conversion efficiency severely limits the throughput of lithography. Thiol-ene reaction, as a photoinitiated radical addition reaction, is widely known as click reaction in the field of chemistry due to its extremely high efficiency. Here, we introduce a click lithography strategy utilizing the rapid thiol-ene click reaction to realize ultraefficient nanofabrication. This novel approach facilitated by the implementation of ultrahigh-functionality material designs enables high-contrast patterning of metal-containing nanoclusters under an extremely low deep-ultraviolet exposure dose, e.g., 7.5 mJ cm^-2, which is 10-20 times lower than the dose used in the photoacid generator-based photoresist system. Meanwhile, 45 nm dense patterns were also achieved at a low dose using electron beam lithography, revealing the great potential of this approach in high-resolution patterning. Our results demonstrated the high-sensitivity and high-resolution features of click lithography, providing inspiration for future lithography design.