Temperature-Dependent Mechanochemical Wear of Silicon in Water: The Role of Si-OH Surfacial Groups

Anisotropic Effects in Local Anodic Oxidation Nanolithography on Silicon Surfaces: Insights from ReaxFF Molecular Dynamics

Fully understanding the anisotropic effect of silicon surface orientations in local anodic oxidation (LAO) nanolithography processes is critical to the precise control of oxide quality and rate. This study used ReaxFF MD simulations to reveal the surface anisotropic effects in the LAO through the analysis of adsorbed species, atomic charge, and oxide growth. Our results show that the LAO behaves differently on silicon (100), (110), and (111) surfaces. Specifically, the application of an electric field significantly increases the quantity of surface-adsorbed -OH2 while reducing -OH on the (111) surface, and results in a higher charge on a greater number of Si atoms on the (100) surface. Moreover, the quantity of surface-adsorbed -OH plays a pivotal role in influencing the oxidation rate, as it directly correlates with an increased formation rate of Si-O-Si bonds. During bias-induced oxidation, the (111) surface appears with a high initial oxidation rate among three surfaces, while the (110) surface underwent increased oxidation at higher electric field strengths. This conclusion is based on the analysis of the evolution of Si-O-Si bond number, surface elevation, and oxide thickness. Our findings align well with prior theoretical and experimental studies, providing deeper insights and clear guidance for the fabrication of high-performance nanoinsulator gates using LAO nanolithography.

Polishing Approaches at Atomic and Close-to-Atomic Scale

Roughness down to atomic and close-to-atomic scale is receiving an increasing attention in recent studies of manufacturing development, which can be realized by high-precision polishing processes. This review presents polishing approaches at atomic and close-to-atomic scale on planar and curved surfaces, including chemical mechanical polishing, plasma-assisted polishing, catalyst-referred etching, bonnet polishing, elastic emission machining, ion beam figuring, magnetorheological finishing, and fluid jet polishing. These polishing approaches are discussed in detail in terms of removal mechanisms, polishing systems, and industrial applications. The authors also offer perspectives for future studies to address existing and potential challenges and promote technological progress.

Role of Interfacial Bonding in Tribochemical Wear

Tribochemical wear of contact materials is an important issue in science and engineering. Understanding the mechanisms of tribochemical wear at an atomic scale is favorable to avoid device failure, improve the durability of materials, and even achieve ultra-precision manufacturing. Hence, this article reviews some of the latest developments of tribochemical wear of typical materials at micro/nano-scale that are commonly used as solid lubricants, tribo-elements, or structural materials of the micro-electromechanical devices, focusing on their universal mechanisms based on the studies from experiments and numerical simulations. Particular focus is given to the fact that the friction-induced formation of interfacial bonding plays a critical role in the wear of frictional systems at the atomic scale.

Atomic-Level Material Removal Mechanisms of Si(110) Chemical Mechanical Polishing: Insights from ReaxFF Reactive Molecular Dynamics Simulations

Reactive molecular dynamics (ReaxFF) simulations are performed to explore the atomistic mechanism of chemical mechanical polishing (CMP) processes on a Si(110) surface polished with an a-SiO₂ particle. The Si surface is oxidized by reacting with water before the CMP process, and the O atoms of the oxidized Si surface mainly exist in the form of Si-O- dangling bonds and Si-O-Si bonds. In the CMP process, the insertion of O atoms into the surface, the formation of interfacial Si-O-Si and Si-Si bridge bonds, and the adsorption of H atoms on the surface-saturated Si atoms can all cause the surface bond breakage and even the Si atomic removal. The contributions of the four different kinds of tribochemical wear mechanisms to the surface wear decrease in turn and are much larger than that of mechanical wear. The results indicate that the material removal in the actual Si CMP process is the combined results of multiple atomic-level wear mechanisms. Furthermore, we find that the oxide layer of the Si surface plays an important role in the surface wear mainly by providing O atoms to insert into the surface, rather than by providing additional reaction pathways to form interfacial Si-O-Si bridge bonds. This work provides new and further insights into the process and mechanism of silicon removal during CMP.

Development of a symmetrical micro-beam minimizing horizontal drift for indentation and scratch

In this work, a symmetric micro-beam was developed to eliminate horizontal drift of the tip during indent and scratch processes, which was inevitable in the usage of a traditionally one-end-fixed cantilever. Using the finite element simulation, a database involving the maximum stress and spring constant depending on the size parameters (length and inertial moment) of the symmetric beam was established to help in optimizing the beam design. A real symmetric micro-beam was fabricated based on the database, and the loading accuracy was checked through the calibration of the spring constant. The reliability of the symmetric beam was experimentally verified through the fabrication of the micro-channel and micro-dot, showing that the horizontal drift was completely suppressed. This technology can potentially be applied in micro/nanoscale research and manufacturing to increase the accuracy of detection and processing, such as the applications in probe-based lithography to improve the loading accuracy at high load condition and enhance the stability of the beam system at high sliding speed.

Dependence of water adsorption on the surface structure of silicon wafers aged under different environmental conditions

Most materials exposed to ambient air can adsorb water molecules and the adsorption capability strongly depends on the surface property. The water contact angle has been widely used as a measure for surface wettability; however, a question can still be asked whether the water contact angle can be used as an adequate sole predictor for water adsorption on the surface in humid air. In this paper, HF-etched silicon wafers were aged (oxidized) under different environmental conditions at room temperature to grow surface layers with varying water contact angles from ∼0° (fully hydrophilic) to ∼83° (highly hydrophobic), and water adsorption as a function of relative humidity (RH) was studied on such surfaces. The thickness and structure of the adsorbed water layer were found to depend on not only the surface wettability on each surface, but also the history of surface oxidation conditions. In particular, the silicon wafer surface oxidized in liquid water uptakes significantly more water from humid air than the fully-hydroxylated native oxide surface (SiO_x/OH), even though its water contact angle is higher than that on the SiO_x/OH surface. This could be attributed to the formation of a gel-like structure during oxidation in liquid water.

Thickness and Structure of Adsorbed Water Layer and Effects on Adhesion and Friction at Nanoasperity Contact

Most inorganic material surfaces exposed to ambient air can adsorb water, and hydrogen bonding interactions among adsorbed water molecules vary depending on, not only intrinsic properties of material surfaces, but also extrinsic working conditions. When dimensions of solid objects shrink to micro- and nano-scales, the ratio of surface area to volume increases greatly and the contribution of water condensation on interfacial forces, such as adhesion (Fa) and friction (Ft), becomes significant. This paper reviews the structural evolution of the adsorbed water layer on solid surfaces and its effect on Fa and Ft at nanoasperity contact for sphere-on-flat geometry. The details of the underlying mechanisms governing water adsorption behaviors vary depending on the atomic structure of the substrate, surface hydrophilicity and atmospheric conditions. The solid surfaces reviewed in this paper include metal/metallic oxides, silicon/silicon oxides, fluorides, and two-dimensional materials. The mechanism by which water condensation influences Fa is discussed based on the competition among capillary force, van der Waals force and the rupture force of solid-like water bridge. The condensed meniscus and the molecular configuration of the water bridge are influenced by surface roughness, surface hydrophilicity, temperature, sliding velocity, which in turn affect the kinetics of water condensation and interfacial Ft. Taking the effects of the thickness and structure of adsorbed water into account is important to obtain a full understanding of the interfacial forces at nanoasperity contact under ambient conditions.