Rapid Self-Assembly and Sequential Infiltration Synthesis of High χ Fluorine-Containing Block Copolymers

Chemically tailored block copolymers for highly reliable sub-10-nm patterns by directed self-assembly

While block copolymer (BCP) lithography is theoretically capable of printing features smaller than 10 nm, developing practical BCPs for this purpose remains challenging. Herein, we report the creation of a chemically tailored, highly reliable, and practically applicable block copolymer and sub-10-nm line patterns by directed self-assembly. Polystyrene-block-[poly(glycidyl methacrylate)-random-poly(methyl methacrylate)] (PS-b-(PGMA-r-PMMA) or PS-b-PGM), which is based on PS-b-PMMA with an appropriate amount of introduced PGMA (10-33 mol%) is quantitatively post-functionalized with thiols. The use of 2,2,2-trifluoroethanethiol leads to polymers (PS-b-PGFMs) with Flory-Huggins interaction parameters (χ) that are 3.5-4.6-times higher than that of PS-b-PMMA and well-defined higher-order structures with domain spacings of less than 20 nm. This study leads to the smallest perpendicular lamellar domain size of 12.3 nm. Furthermore, thin-film lamellar domain alignment and vertical orientation are highly reliably and reproducibly obtained by directed self-assembly to yield line patterns that correspond to a 7.6 nm half-pitch size.

High χ P2PFBEMA-b-P2VP Block Copolymers Forming 6-8 nm Domains for Semiconductor Lithography

We leveraged the potential of high χ-low N block copolymer (BCP), namely, poly[2-(perfluorobutyl) ethyl methacrylate]-block-poly(2-vinylpyridine) (P2PFBEMA-b-P2VP), and demonstrated its utility in next-generation nanomanufacturing. By combining molecular dynamics simulations with experiments, the χ value was calculated to be as high as 0.4 (at 150 °C), surpassing similar structures. Highly ordered features suitable for application were observed, ranging in periods from 19.0 nm down to 12.1 nm, with feature sizes as small as 6 nm. Transmission electron microscopy images of the BCP solutions indicated that preformed micelles in the solution facilitated the self-assembly process of the thin film. In addition, the vertical or parallel orientation of the cylindrical structure was determined by manipulating the solvent, substrate, and annealing conditions. Finally, guided by a wide topographical template, nearly defect-free directed self-assembly (DSA) lines with a resolution of 8 nm were achieved, highlighting its potential practical application in DSA lithography technology.

Al2O3 Dot and Antidot Array Synthesis in Hexagonally Packed Poly(styrene-block-methyl methacrylate) Nanometer-Thick Films for Nanostructure Fabrication

Nanostructured organic templates originating from self-assembled block copolymers (BCPs) can be converted into inorganic nanostructures by sequential infiltration synthesis (SIS). This capability is particularly relevant within the framework of advanced lithographic applications because of the exploitation of the BCP-based nanostructures as hard masks. In this work, Al₂O₃ dot and antidot arrays were synthesized by sequential infiltration of trimethylaluminum and water precursors into perpendicularly oriented cylinder-forming poly(styrene-block-methyl methacrylate) (PS-b-PMMA) BCP thin films. The mechanism governing the effective incorporation of Al₂O₃ into the PMMA component of the BCP thin films was investigated evaluating the evolution of the lateral and vertical dimensions of Al₂O₃ dot and antidot arrays as a function of the SIS cycle number. The not-reactive PS component and the PS/PMMA interface in self-assembled PS-b-PMMA thin films result in additional paths for diffusion and supplementary surfaces for sorption of precursor molecules, respectively. Thus, the mass uptake of Al₂O₃ into the PMMA block of self-assembled PS-b-PMMA thin films is higher than that in pure PMMA thin films.

Strategy for Enhancing Ultrahigh-Molecular-Weight Block Copolymer Chain Mobility to Access Large Period Sizes (>100 nm)

Assembling ultrahigh-molecular-weight (UHMW) block copolymers (BCPs) in rapid time scales is perceived as a grand challenge in polymer science due to slow kinetics. Through surface engineering and identifying a nonvolatile solvent (propylene glycol methyl ether acetate, PGMEA), we showcase the impressive ability of a series of lamellar poly(styrene)-block-poly(2-vinylpyridine) (PS-b-P2VP) BCPs to self-assemble directly after spin-coating. In particular, we show the formation of large-period (≈111 nm) lamellar structures from a neat UHMW PS-b-P2VP BCP. The significant influence of solvent-polymer solubility parameters are explored to enhance the polymer chain mobility. After optimization using solvent vapor annealing, increased feature order of ultralarge-period PS-b-P2VP BCP patterns in 1 h is achieved. Isolated metallic and dielectric features are also demonstrated to exemplify the promise that large BCP periods offer for functional applications. The methods described in this article center on industry-compatible patterning schemes, solvents, and deposition techniques. Thus, our straightforward UHMW BCP strategy potentially paves a viable and practical path forward for large-scale integration in various sectors, e.g., photonic band gaps, polarizers, and membranes that demand ultralarge period sizes.