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Lin X, Deng J, Bai Y, Huo D, Zhu C, Pan Z, Jian T, Liu C, Zhang C. van der Waals Engineering of Charge Density Waves in One-Dimensional Nb 6Te 6 Nanowires. ACS NANO 2024; 18:13241-13248. [PMID: 38718159 DOI: 10.1021/acsnano.4c02379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
One-dimensional (1D) systems have played a crucial role in the development of fundamental physics and practical applications. Recently, transition metal monochalcogenide (TMM) wires based on molybdenum (Mo) and tungsten (W) have emerged as promising platforms for investigating 1D physics in pure van der Waals (vdW) platforms. Here, we report on the bottom-up fabrication of Nb6Te6 wires down to the single-wire limit. The unique properties of Nb6Te6 single wire enable the realization of 1D charge density wave (CDW) phases in an isolated single TMM wire. Moreover, we revealed the appealing regulation of 1D CDW orders by van der Waals interactions at either the 1D-2D interface (i.e., rotation of a single wire along its wire axis) or the 1D-1D interface. Two rotation angles (30° and 0°) give rise to 3 × 1 and zigzag chain CDW morphologies, respectively, which exhibit pronounced differences in atomic displacement by a factor of 2. The interwire vdW coupling overwhelms its counterpart at the 1D-2D interface, thus locking the rotation angle (at 0°) as well as the interwire atomic registries. In contrast, interestingly, the phases of the charge oscillations are independent of the adjacent wires. The ability to tailor 1D charge orders provides a crucial addition to the toll set of vdW integrations beyond two-dimensional materials.
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Affiliation(s)
- Xiaoyu Lin
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jinghao Deng
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yusong Bai
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Da Huo
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chao Zhu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zemin Pan
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Tao Jian
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chuansheng Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chendong Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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2
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He D, Zheng Y, Ding D, Ma H, Zhang A, Cheng Y, Zhao W, Jin C. Titanium Self-Intercalation Induced Formation of Orthogonal (1 × 1) Edge/Surface Reconstruction in 1T-TiSe 2: Atomic Scale Dynamics and Mechanistic Study. NANO LETTERS 2024; 24:3835-3841. [PMID: 38498307 DOI: 10.1021/acs.nanolett.4c01040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Edges and surfaces play indispensable roles in affecting the chemical-physical properties of materials, particularly in two-dimensional transition metal dichalcogenides (TMDCs) with reduced dimensionality. Herein, we report a novel edge/surface structure in multilayer 1T-TiSe2, i.e., the orthogonal (1 × 1) reconstruction, induced by the self-intercalation of Ti atoms into interlayer octahedral sites of the host TiSe2 at elevated temperature. Formation dynamics of the reconstructed edge/surface are captured at the atomic level by in situ scanning transmission electron microscopy (STEM) and further validated by density functional theory (DFT), which enables the proposal of the nucleation mechanism and two growth routes (zigzag and armchair). Via STEM-electron energy loss spectroscopy (STEM-EELS), a chemical shift of 0.6 eV in Ti L3,2 is observed in the reconstructed edge/surface, which is attributed to the change of the coordination number and lattice distortion. The present work provides insights to tailor the atomic/electronic structures and properties of 2D TMDC materials.
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Affiliation(s)
- Daliang He
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Degong Ding
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
| | - Hao Ma
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580 Shandong, China
| | - Aixinye Zhang
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580 Shandong, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580 Shandong, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P. R. China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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3
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Deng J, Huo D, Bai Y, Lin X, Cheng Z, Zhang C. Observations of Charge-Density-Wave States in W 6Te 6 Wires. NANO LETTERS 2023; 23:7831-7837. [PMID: 37616474 DOI: 10.1021/acs.nanolett.3c01373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Determining the electronic ground state of a one-dimensional system is crucial to understanding the underlying physics of electronic behavior. Here, we demonstrate the discovery of charge-density wave states in few-wire W6Te6 arrays using scanning tunneling microscopy/spectroscopy. We directly visualize incommensurate charge orders, energy gaps with prominent coherence peaks, and the picometer-scale lattice distortion in nearly disorder-free double-wire systems, thereby demonstrating the existence of Peierls-type charge density waves. In the presence of disorder-induced charge order fluctuations, the coherence peaks resulting from phase correlation disappear and gradually transform the system into the pseudogap states. The power-law zero-bias anomaly and quasi-particle interference analysis further suggest the Tomonaga-Luttinger liquid behavior in such pseudogap region. In addition, we explicitly determined the evolution of the CDW energy gap as a function of stacking-wire numbers. The present study demonstrates the existence of electron-phonon interactions in few-wire W6Te6 that can be tuned by disorders and van der Waals stacking.
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Affiliation(s)
- Jinghao Deng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Da Huo
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Yusong Bai
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xiaoyu Lin
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhengbo Cheng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chendong Zhang
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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4
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Lu S, Guo D, Cheng Z, Guo Y, Wang C, Deng J, Bai Y, Tian C, Zhou L, Shi Y, He J, Ji W, Zhang C. Controllable dimensionality conversion between 1D and 2D CrCl 3 magnetic nanostructures. Nat Commun 2023; 14:2465. [PMID: 37117203 PMCID: PMC10147715 DOI: 10.1038/s41467-023-38175-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Accepted: 04/19/2023] [Indexed: 04/30/2023] Open
Abstract
The fabrication of one-dimensional (1D) magnetic systems on solid surfaces, although of high fundamental interest, has yet to be achieved for a crossover between two-dimensional (2D) magnetic layers and their associated 1D spin chain systems. In this study, we report the fabrication of 1D single-unit-cell-width CrCl3 atomic wires and their stacked few-wire arrays on the surface of a van der Waals (vdW) superconductor NbSe2. Scanning tunneling microscopy/spectroscopy and first-principles calculations jointly revealed that the single wire shows an antiferromagnetic large-bandgap semiconducting state in an unexplored structure different from the well-known 2D CrCl3 phase. Competition among the total energies and nanostructure-substrate interfacial interactions of these two phases result in the appearance of the 1D phase. This phase was transformable to the 2D phase either prior to or after the growth for in situ or ex situ manipulations, in which the electronic interactions at the vdW interface play a nontrivial role that could regulate the dimensionality conversion and structural transformation between the 1D-2D CrCl3 phases.
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Affiliation(s)
- Shuangzan Lu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Jiufengshan Laboratory, Wuhan, 430074, China
| | - Deping Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Zhengbo Cheng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yanping Guo
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Cong Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Jinghao Deng
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yusong Bai
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Cheng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Linwei Zhou
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun He
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, China.
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
| | - Chendong Zhang
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
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5
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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6
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Boebinger MG, Brea C, Ding LP, Misra S, Olunloyo O, Yu Y, Xiao K, Lupini AR, Ding F, Hu G, Ganesh P, Jesse S, Unocic RR. The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210116. [PMID: 36635517 DOI: 10.1002/adma.202210116] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 01/02/2023] [Indexed: 06/17/2023]
Abstract
The ability to deterministically fabricate nanoscale architectures with atomic precision is the central goal of nanotechnology, whereby highly localized changes in the atomic structure can be exploited to control device properties at their fundamental physical limit. Here, an automated, feedback-controlled atomic fabrication method is reported and the formation of 1D-2D heterostructures in MoS2 is demonstrated through selective transformations along specific crystallographic orientations. The atomic-scale probe of an aberration-corrected scanning transmission electron microscope (STEM) is used, and the shape and symmetry of the scan pathway relative to the sample orientation are controlled. The focused and shaped electron beam is used to reliably create Mo6 S6 nanowire (MoS-NW) terminated metallic-semiconductor 1D-2D edge structures within a pristine MoS2 monolayer with atomic precision. From these results, it is found that a triangular beam path aligned along the zig-zag sulfur terminated (ZZS) direction forms stable MoS-NW edge structures with the highest degree of fidelity without resulting in disordering of the surrounding MoS2 monolayer. Density functional theory (DFT) calculations and ab initio molecular dynamic simulations (AIMD) are used to calculate the energetic barriers for the most stable atomic edge structures and atomic transformation pathways. These discoveries provide an automated method to improve understanding of atomic-scale transformations while opening a pathway toward more precise atomic-scale engineering of materials.
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Affiliation(s)
- Matthew G Boebinger
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Courtney Brea
- Department of Chemistry and Biochemistry, Queens College, City University of New York, 65-30 Kissena Blvd, Flushing, NY, 11367, USA
| | - Li-Ping Ding
- Department of Physics, Shaanxi University of Science and Technology, Xi'an Weiyang University Park, Xi'an, Shaanxi Province, China
| | - Sudhajit Misra
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Olugbenga Olunloyo
- Department of Physics and Astronomy, University of Tennessee, 1408 Circle Dr, Knoxville, TN, 37996, USA
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
- School of Physics and Technology, Wuhan University, Wuchang District, Wuhan, Hubei, 430072, China
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Andrew R Lupini
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, 50 UNIST-gil, Ulsan, 44919, South Korea
- School of Materials Science and Engineering, Ulsan Institute of Science and Technology, 50 UNIST-gil, Ulsan, 44919, South Korea
| | - Guoxiang Hu
- Department of Chemistry and Biochemistry, Queens College, City University of New York, 65-30 Kissena Blvd, Flushing, NY, 11367, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37830, USA
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7
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Ripoll-Sau J, Calleja F, Casado Aguilar P, Ibarburu IM, Vázquez de Parga AL, Miranda R, Garnica M. Phase control and lateral heterostructures of MoTe 2 epitaxially grown on graphene/Ir(111). NANOSCALE 2022; 14:10880-10888. [PMID: 35848284 DOI: 10.1039/d2nr03074h] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Engineering the growth of the different phases of two-dimensional transition metal dichalcogenides (2D-TMDs) is a promising way to exploit their potential since the phase determines their physical and chemical properties. Here, we report on the epitaxial growth of monolayer MoTe2 on graphene on an Ir(111) substrate. Scanning tunneling microscopy and spectroscopy provide insights into the structural and electronic properties of the different polymorphic phases, which remain decoupled from the substrate due to the weak interaction with graphene. In addition, we demonstrate a great control of the relative coverage of the relevant 1T' and 1H MoTe2 phases by varying the substrate temperature during the growth. In particular, we obtain large areas of the 1T' phase exclusively or the coexistence of both phases with different ratios.
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Affiliation(s)
- Joan Ripoll-Sau
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Fabian Calleja
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
| | - Pablo Casado Aguilar
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Iván M Ibarburu
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Amadeo L Vázquez de Parga
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Rodolfo Miranda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Manuela Garnica
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), 28049 Madrid, Spain.
- Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049 Madrid, Spain
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8
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Oh S, Chae S, Kwon M, Ahn J, Woo C, Choi KH, Jeon J, Dong X, Kim TY, Asghar G, Kim H, Paik HJ, Yu HK, Choi JY. Organic Dispersion of Mo 3Se 3- Single-Chain Atomic Crystals Using Surface Modification Methods. ACS NANO 2022; 16:8022-8029. [PMID: 35511942 DOI: 10.1021/acsnano.2c00965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this study, single-chain atomic crystals (SCACs), Mo3Se3-, which can be uniformly dispersed, with an atomically thin diameter of ∼0.6 nm were modified to disperse in an organic solvent. Various surfactants were chosen to provide steric hindrance to aqueous-dispersed Mo3Se3- by modifying the surface of Mo3Se3-. The organic dispersions of surface-modified Mo3Se3- SCACs in nonpolar solvent (toluene, benzene, and chloroform) were stable with a uniform diameter of 2 nm, and they have enhanced stability from oxidation (>10 days). With the surfactants that have a polystyrene tail group (PS-NH2), the surface-modified Mo3Se3- SCAC showed high compatibility with a polystyrene polymer matrix. Using the surface-modified Mo3Se3- SCAC, a homogeneous Mo3Se3-/polystyrene/toluene organogel was prepared. More importantly, the Mo3Se3-/polystyrene organogel exhibits significantly enhanced mechanical properties, with the improvement of 202.27% and 279.52% for tensile strength and elongation, respectively, compared with that of the pure organogel. The surface-modified Mo3Se3- had a similar structure with a polymer matrix, and the properties of the polymer can be improved even with a small addition of Mo3Se3-.
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Affiliation(s)
- Seungbae Oh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sudong Chae
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Minho Kwon
- Department of Polymer Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jungyoon Ahn
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chaeheon Woo
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xue Dong
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Tae Yeong Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ghulam Asghar
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hanyoung Kim
- Department of Polymer Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Hyun-Jong Paik
- Department of Polymer Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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9
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Hong J, Chen X, Li P, Koshino M, Li S, Xu H, Hu Z, Ding F, Suenaga K. Multiple 2D Phase Transformations in Monolayer Transition Metal Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200643. [PMID: 35307877 DOI: 10.1002/adma.202200643] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 03/09/2022] [Indexed: 06/14/2023]
Abstract
Phase transformation lies at the heart of materials science because it allows for the control of structural phases of solids with desired properties. It has long been a challenge to manipulate phase transformations in crystals at the nanoscale with designed interfaces and compositions. Here in situ electron microscopy is employed to fabricate novel 2D phases with different stoichiometries in monolayer MoS2 and MoSe2 . The multiphase transformations: MoS2 → Mo4 S6 and MoSe2 → Mo6 Se6 which are highly localized with atomically sharp boundaries are observed. Their atomic mechanisms are determined as chalcogen 2H ↔ 1T sliding, cation shift, and commensurate lattice reconstructions, resulting in decreasing direct bandgaps and even a semiconductor-metal transition. These results will be a paradigm for the manipulation of multiphase heterostructures with controlled compositions and sharp interfaces, which will guide the future phase engineered electronics and optoelectronics of metal chalcogenides.
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Affiliation(s)
- Jinhua Hong
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Xi Chen
- Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, Tianjin, 300350, China
| | - Pai Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 689-798, Republic of Korea
| | - Masanori Koshino
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Zhixin Hu
- Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University, Tianjin, 300350, China
| | - Feng Ding
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 689-798, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Republic of Korea
| | - Kazu Suenaga
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
- The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Osaka, 567-0047, Japan
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10
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Zhang Q, Zhang Y, Hou Y, Xu R, Jia L, Huang Z, Hao X, Zhou J, Zhang T, Liu L, Xu Y, Gao HJ, Wang Y. Nanoscale Control of One-Dimensional Confined States in Strongly Correlated Homojunctions. NANO LETTERS 2022; 22:1190-1197. [PMID: 35043640 DOI: 10.1021/acs.nanolett.1c04363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Construction of lateral junctions is essential to generate one-dimensional (1D) confined potentials that can effectively trap quasiparticles. A series of remarkable electronic phases in one dimension, such as Wigner crystallization, are expected to be realized in such junctions. Here, we demonstrate that we can precisely tune the 1D-confined potential with an in situ manipulation technique, thus providing a dynamic way to modify the correlated electronic states at the junctions. We confirm the existence of 1D-confined potential at the homojunction of two single-layer 1T-NbSe2 islands. Such potential is structurally sensitive and shows a nonmonotonic function of their interspacing. Moreover, there is a change of electronic properties from the correlated insulator to the generalized 1D Wigner crystallization while the confinement becomes strong. Our findings not only establish the capability to fabricate structures with dynamically tunable properties, but also pave the way toward more exotic correlated systems in low dimensions.
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Affiliation(s)
- Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yanhui Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Runzhang Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyu Hao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiadong Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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11
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Tang J, Huang C, Wu Q, Cui A, Li W. Atomic-scale intercalation of N-doped carbon into monolayered MoSe2-Mo2C heterojunction as a highly efficiency hydrogen evolution reaction catalyst. J Electroanal Chem (Lausanne) 2022. [DOI: 10.1016/j.jelechem.2021.115897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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12
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Lim HE, Nakanishi Y, Liu Z, Pu J, Maruyama M, Endo T, Ando C, Shimizu H, Yanagi K, Okada S, Takenobu T, Miyata Y. Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires. NANO LETTERS 2021; 21:243-249. [PMID: 33307702 DOI: 10.1021/acs.nanolett.0c03456] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.
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Affiliation(s)
- Hong En Lim
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Zheng Liu
- Innovative Functional Materials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Mina Maruyama
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Chisato Ando
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Hiroshi Shimizu
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Kazuhiro Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
| | - Susumu Okada
- Department of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji 192-0397, Japan
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13
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Deng J, Huo D, Bai Y, Guo Y, Pan Z, Lu S, Cui P, Zhang Z, Zhang C. Precise Tuning of Band Structures and Electron Correlations by van der Waals Stacking of One-dimensional W 6Te 6 Wires. NANO LETTERS 2020; 20:8866-8873. [PMID: 33227207 DOI: 10.1021/acs.nanolett.0c03897] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Stacking of two-dimensional (2D) van der Waals (vdW) atomic sheets has been established as a powerful approach to fabricating new materials with broad versatilities and emergent functionalities. Here we demonstrate a bottom-up approach to fabricating isolated single W6Te6 wires and their lateral assemblies, offering a unique platform for investigating the elegant role of vdW coupling in 1D systems with atomic precision. We find experimentally and theoretically a single W6Te6 wire is a 1D semiconductor with a band gap of ∼60 meV, and a semiconductor-to-metal transition takes place upon interwire vdW stacking. The metallic multiwires exhibit strong Tomonaga-Luttinger liquid characteristics with the correlation parameter g varying from g = 0.086 for biwire to g = 0.136 for six-wire assemblies, all much reduced from the Fermi liquid regime (g = 1). The present study demonstrates wire-by-wire vdW stacking is a versatile means for fabrication of 1D systems with tunable electronic properties.
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Affiliation(s)
- Jinghao Deng
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Da Huo
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Yusong Bai
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Yanping Guo
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Zemin Pan
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Shuangzan Lu
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale (HFNL), and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale (HFNL), and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chendong Zhang
- School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
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14
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Xia Y, Zhang J, Jin Y, Ho W, Xu H, Xie M. Charge Density Modulation and the Luttinger Liquid State in MoSe 2 Mirror Twin Boundaries. ACS NANO 2020; 14:10716-10722. [PMID: 32806039 DOI: 10.1021/acsnano.0c05397] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
A mirror twin-domain boundary (MTB) in monolayer MoSe2 represents a (quasi) one-dimensional metallic system. Its electronic properties, particularly the low-energy excitations in the so-called 4|4P-type MTB, have drawn considerable research attention. Reports of quantum well states, charge density waves, and the Tomonaga-Luttinger liquid (TLL) have all been made. Here, by controlling the lengths of the MTBs and employing different substrates, we reveal by low-temperature scanning tunneling microscopy/spectroscopy, Friedel oscillations and quantum confinement effects causing the charge density modulations along the defect. The results are inconsistent with charge density waves. Interestingly, for graphene-supported samples, TLL in the MTBs is suggested, whereas that grown on gold, an ordinary Fermi liquid, is indicated.
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Affiliation(s)
- Yipu Xia
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Junqiu Zhang
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Yuanjun Jin
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Wingkin Ho
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Hu Xu
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Maohai Xie
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
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15
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Wang L, Wu Y, Yu Y, Chen A, Li H, Ren W, Lu S, Ding S, Yang H, Xue QK, Li FS, Wang G. Direct Observation of One-Dimensional Peierls-type Charge Density Wave in Twin Boundaries of Monolayer MoTe 2. ACS NANO 2020; 14:8299-8306. [PMID: 32579335 DOI: 10.1021/acsnano.0c02072] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One-dimensional (1D) metallic mirror-twin boundaries (MTBs) in monolayer transition-metal dichalcogenides exhibit a periodic charge modulation and provide an ideal platform for exploring collective electron behavior in the confined system. The underlying mechanism of the charge modulation and how the electrons travel in 1D structures remain controversial. Here, for the first time, we observed atomic-scale structures of the charge distribution within one period in MTB of monolayer MoTe2 by using scanning tunneling microscopy/spectroscopy. The coexisting apparent periodic lattice distortions and U-shaped energy gap clearly demonstrate a Peierls-type charge density wave (CDW). Equidistant quantized energy levels with varied periodicity are further discovered outside the CDW gap along the metallic MTB. Density functional theory calculations are in good agreement with the gapped electronic structures and reveal that they originate mainly from a Mo 4d orbital. Our work presents hallmark evidence of the 1D Peierls-type CDW on the metallic MTBs and offers opportunities to study the underlying physics of 1D charge modulation.
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Affiliation(s)
- Li Wang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Ying Wu
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yayun Yu
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
| | - Aixi Chen
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Huifang Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Wei Ren
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Shuai Lu
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Sunan Ding
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Hui Yang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qi-Kun Xue
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Fang-Sen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Guang Wang
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
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