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Wang L, Zhang P, Gao Z, Wen D. Artificial Tactile Sensing Neuron with Tactile Sensing Ability Based on a Chitosan Memristor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308610. [PMID: 38482740 PMCID: PMC11109609 DOI: 10.1002/advs.202308610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 01/11/2024] [Indexed: 05/23/2024]
Abstract
Owing to the highly parallel network structure of the biological neural network and its triggered processing mode, tactile sensory neurons can realize the perception of external signals and the functions of perception, memory, and data processing by adjusting the synaptic weight. In this paper, a piezoresistive pressure sensor is combined with a memristor to design an artificial tactile sensory neuron. The polyurethane sponge sensor has excellent sensitivity and can convert physical stimuli into electrical signals, and the chitosan-based memristor has stable bipolar resistive switching characteristics, allowing further information to be memorized and processed. The neuron can respond to tactile stimuli of different degrees, durations, and frequencies; realize potentiation/depression modulation, paired-pulse facilitation, and spike-timing-dependent plasticity; exhibit spike-rate-dependent plasticity; and store and erase tactile information through memistor state switching, which has great application potential in biological sensing systems.
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Affiliation(s)
- Lu Wang
- School of Electronic EngineeringHeilongjiang UniversityHarbin150080China
| | - Peng Zhang
- School of Electronic EngineeringHeilongjiang UniversityHarbin150080China
| | - Zhiqiang Gao
- School of Electronic EngineeringHeilongjiang UniversityHarbin150080China
| | - Dianzhong Wen
- School of Electronic EngineeringHeilongjiang UniversityHarbin150080China
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Xi J, Yang H, Li X, Wei R, Zhang T, Dong L, Yang Z, Yuan Z, Sun J, Hua Q. Recent Advances in Tactile Sensory Systems: Mechanisms, Fabrication, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:465. [PMID: 38470794 DOI: 10.3390/nano14050465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Revised: 02/07/2024] [Accepted: 02/19/2024] [Indexed: 03/14/2024]
Abstract
Flexible electronics is a cutting-edge field that has paved the way for artificial tactile systems that mimic biological functions of sensing mechanical stimuli. These systems have an immense potential to enhance human-machine interactions (HMIs). However, tactile sensing still faces formidable challenges in delivering precise and nuanced feedback, such as achieving a high sensitivity to emulate human touch, coping with environmental variability, and devising algorithms that can effectively interpret tactile data for meaningful interactions in diverse contexts. In this review, we summarize the recent advances of tactile sensory systems, such as piezoresistive, capacitive, piezoelectric, and triboelectric tactile sensors. We also review the state-of-the-art fabrication techniques for artificial tactile sensors. Next, we focus on the potential applications of HMIs, such as intelligent robotics, wearable devices, prosthetics, and medical healthcare. Finally, we conclude with the challenges and future development trends of tactile sensors.
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Affiliation(s)
- Jianguo Xi
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huaiwen Yang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Xinyu Li
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Ruilai Wei
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Taiping Zhang
- Tianfu Xinglong Lake Laboratory, Chengdu 610299, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Zhenjun Yang
- Hefei Hospital Affiliated to Anhui Medical University (The Second People's Hospital of Hefei), Hefei 230011, China
| | - Zuqing Yuan
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Junlu Sun
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, Guangxi Normal University, Guilin 541004, China
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Hua Q, Shen G. Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics. Chem Soc Rev 2024; 53:1316-1353. [PMID: 38196334 DOI: 10.1039/d3cs00918a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight structure, and excellent mechanical robustness and conformability, have garnered significant attention due to their unprecedented potential in healthcare, advanced robotics, and human-machine interface technologies. An increasing number of low-dimensional nanostructures with exceptional mechanical, electronic, and/or optical properties are being developed for flexible/stretchable electronics to fulfill the functional and application requirements of information sensing, processing, and interactive loops. Compared to the traditional single-layer format, which has a restricted design space, a monolithic three-dimensional (M3D) integrated device architecture offers greater flexibility and stretchability for electronic devices, achieving a high-level of integration to accommodate the state-of-the-art design targets, such as skin-comfort, miniaturization, and multi-functionality. Low-dimensional nanostructures possess small size, unique characteristics, flexible/elastic adaptability, and effective vertical stacking capability, boosting the advancement of M3D-integrated flexible/stretchable systems. In this review, we provide a summary of the typical low-dimensional nanostructures found in semiconductor, interconnect, and substrate materials, and discuss the design rules of flexible/stretchable devices for intelligent sensing and data processing. Furthermore, artificial sensory systems in 3D integration have been reviewed, highlighting the advancements in flexible/stretchable electronics that are deployed with high-density, energy-efficiency, and multi-functionalities. Finally, we discuss the technical challenges and advanced methodologies involved in the design and optimization of low-dimensional nanostructures, to achieve monolithic 3D-integrated flexible/stretchable multi-sensory systems.
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Affiliation(s)
- Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
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Chen J, Chen K, Jin J, Wu K, Wang Y, Zhang J, Liu G, Sun J. Outstanding Synergy of Sensitivity and Linear Range Enabled by Multigradient Architectures. NANO LETTERS 2023; 23:11958-11967. [PMID: 38090798 DOI: 10.1021/acs.nanolett.3c04204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Flexible pressure sensors are devices that mimic the sensory capabilities of natural human skin and enable robots to perceive external stimuli. One of the main challenges is maintaining high sensitivity over a broad linear pressure range due to poor structural compressibility. Here, we report a flexible pressure sensor with an ultrahigh sensitivity of 153.3 kPa-1 and linear response over an unprecedentedly broad pressure range from 0.0005 to 1300 kPa based on interdigital-shaped, multigradient architectures, featuring modulus, conductivity, and microstructure gradients. Such multigradient architectures and interdigital-shaped configurations enable effective stress transfer and conductivity regulation, evading the pressure sensitivity-linear range trade-off dilemma. Together with high pressure resolution, high frequency response, and good reproducibility over the ultrabroad linear range, proof-of-concept applications such as acoustic wave detection, high-resolution pressure measurement, and healthcare monitoring in diverse scenarios are demonstrated.
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Affiliation(s)
- Jiaorui Chen
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Kai Chen
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Jiaqi Jin
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Kai Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Yaqiang Wang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Jinyu Zhang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Gang Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P.R. China
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Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y. Solution-processed electronics for artificial synapses. MATERIALS HORIZONS 2021; 8:447-470. [PMID: 34821264 DOI: 10.1039/d0mh01520b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.
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Affiliation(s)
- Kuakua Lu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, P. R. China.
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Meng JL, Wang TY, He ZY, Chen L, Zhu H, Ji L, Sun QQ, Ding SJ, Bao WZ, Zhou P, Zhang DW. Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications. MATERIALS HORIZONS 2021; 8:538-546. [PMID: 34821269 DOI: 10.1039/d0mh01730b] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The data processing efficiency of traditional computers is suffering from the intrinsic limitation of physically separated processing and memory units. Logic-in-memory and brain-inspired neuromorphic computing are promising in-memory computing paradigms for improving the computing efficiency and avoiding high power consumption caused by extra data movement. However, memristors that can conduct digital memcomputing and neuromorphic computing simultaneously are limited by the difference in the information form between digital data and analogue data. In order to solve this problem, this paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system. The logic-in-memory basis, including FALSE, material implication (IMP), and NAND, are implemented successfully. The power consumption of the proposed memristor per synaptic event (198 fJ) can be as low as biology (fJ level) and the response time (1 μs) of the neuromorphic computing is four orders of magnitude shorter than that of the human brain (10 ms), paving the way for wearable ultrahigh efficient next-generation in-memory computing architectures.
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Affiliation(s)
- Jia-Lin Meng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
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Guo J, Yu Y, Zhang D, Zhang H, Zhao Y. Morphological Hydrogel Microfibers with MXene Encapsulation for Electronic Skin. RESEARCH (WASHINGTON, D.C.) 2021; 2021:7065907. [PMID: 33763650 PMCID: PMC7953990 DOI: 10.34133/2021/7065907] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Accepted: 02/02/2021] [Indexed: 04/13/2023]
Abstract
Electronic skins with distinctive features have attracted remarkable attention from researchers because of their promising applications in flexible electronics. Here, we present novel morphologically conductive hydrogel microfibers with MXene encapsulation by using a multi-injection coflow glass capillary microfluidic chip. The coaxial flows in microchannels together with fast gelation between alginate and calcium ions ensure the formation of hollow straight as well as helical microfibers and guarantee the in situ encapsulation of MXene. The resultant hollow straight and helical MXene hydrogel microfibers were with highly controllable morphologies and package features. Benefiting from the easy manipulation of the microfluidics, the structure compositions and the sizes of MXene hydrogel microfibers could be easily tailored by varying different flow rates. It was demonstrated that these morphologically conductive MXene hydrogel microfibers were with outstanding capabilities of sensitive responses to motion and photothermal stimulations, according to their corresponding resistance changes. Thus, we believe that our morphologically conductive MXene hydrogel microfibers with these excellent features will find important applications in smart flexible electronics especially electronic skins.
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Affiliation(s)
- Jiahui Guo
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
- Department of Rheumatology Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210008, China
| | - Yunru Yu
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China
| | - Dagan Zhang
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
- Department of Rheumatology Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210008, China
| | - Han Zhang
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
| | - Yuanjin Zhao
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
- Department of Rheumatology Immunology, Institute of Translational Medicine, The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210008, China
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