Non-Invasive Nanoscale Potentiometry and Ballistic Transport in Epigraphene Nanoribbons

Imaging the breaking of electrostatic dams in graphene for ballistic and viscous fluids

The charge carriers in a material can, under special circumstances, behave as a viscous fluid. In this work, we investigated such behavior by using scanning tunneling potentiometry to probe the nanometer-scale flow of electron fluids in graphene as they pass through channels defined by smooth and tunable in-plane p-n junction barriers. We observed that as the sample temperature and channel widths are increased, the electron fluid flow undergoes a Knudsen-to-Gurzhi transition from the ballistic to the viscous regime characterized by a channel conductance that exceeds the ballistic limit, as well as suppressed charge accumulation against the barriers. Our results are well modeled by finite element simulations of two-dimensional viscous current flow, and they illustrate how Fermi liquid flow evolves with carrier density, channel width, and temperature.

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

Performance analysis and implementation of a scanning tunneling potentiometry setup: Toward low-noise and high-sensitivity measurements of the electrochemical potential

Scanning tunneling potentiometry allows for studying charge transport on the nanoscale to relate the local electrochemical potential to morphological features of thin films or two-dimensional materials. To resolve the influence of atomic-scale defects on the charge transport, sub-µV sensitivity for the electrochemical potential is required. Here, we present a complete analysis of the noise in scanning tunneling potentiometry for different modes of operation. We discuss the role of various noise sources in the measurements and technical issues for both dc and ac detection schemes. The influence of the feedback controller in the determination of the local electrochemical potential is taken into account. Furthermore, we present a software-based implementation of the potentiometry technique in both dc and ac modes in a commercial scanning tunneling microscopy setup with only the addition of a voltage-controlled current source. We directly compare the ac and dc modes on a model resistor circuit and on epitaxial graphene and draw conclusions on the advantages and disadvantages of each mode. The effects of sample heating and the occurrence of thermal voltages are discussed.