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Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, Taniguchi T, Aoki N, Han JE, Bird JP. Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nat Commun 2023; 14:1507. [PMID: 36932096 PMCID: PMC10023744 DOI: 10.1038/s41467-023-37292-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 03/09/2023] [Indexed: 03/19/2023] Open
Abstract
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the "Moiré bands", we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Affiliation(s)
- Jubin Nathawat
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ishiaka Mansaray
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Kohei Sakanashi
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Naoto Wada
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Michael D Randle
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Shenchu Yin
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Keke He
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Nargess Arabchigavkani
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ripudaman Dixit
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Bilal Barut
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Miao Zhao
- High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing, 100029, PR China
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Ratchanok Somphonsane
- Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Gil-Ho Kim
- School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Jong E Han
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA. .,Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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Yang Y, Li J, Yin J, Xu S, Mullan C, Taniguchi T, Watanabe K, Geim AK, Novoselov KS, Mishchenko A. In situ manipulation of van der Waals heterostructures for twistronics. SCIENCE ADVANCES 2020; 6:eabd3655. [PMID: 33277256 PMCID: PMC7717928 DOI: 10.1126/sciadv.abd3655] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Accepted: 10/22/2020] [Indexed: 05/30/2023]
Abstract
In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be markedly changed by a moiré pattern induced by twist angles between different layers. This process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here, we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique, we fabricated heterostructures where graphene is perfectly aligned with both top and bottom encapsulating layers of hexagonal boron nitride. Our technique enables twisted 2D material systems in one single stack with dynamically tunable optical, mechanical, and electronic properties.
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Affiliation(s)
- Yaping Yang
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Jidong Li
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Jun Yin
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Shuigang Xu
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Ciaran Mullan
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andre K Geim
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Konstantin S Novoselov
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, UK
- Centre for Advanced 2D Materials, National University of Singapore, 117546, Singapore
| | - Artem Mishchenko
- School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
- National Graphene Institute, University of Manchester, Oxford Road, Manchester M13 9PL, UK
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