Terahertz Photogalvanics in Twisted Bilayer Graphene Close to the Second Magic Angle

Nonlinear physics of moiré superlattices

Nonlinear physics is one of the most important research fields in modern physics and materials science. It offers an unprecedented paradigm for exploring many fascinating physical phenomena and realizing diverse cutting-edge applications inconceivable in the framework of linear processes. Here we review the recent theoretical and experimental progress concerning the nonlinear physics of synthetic quantum moiré superlattices. We focus on the emerging nonlinear electronic, optical and optoelectronic properties of moiré superlattices, including but not limited to the nonlinear anomalous Hall effect, dynamically twistable harmonic generation, nonlinear optical chirality, ultralow-power-threshold optical solitons and spontaneous photogalvanic effect. We also present our perspectives on the future opportunities and challenges in this rapidly progressing field, and highlight the implications for advances in both fundamental physics and technological innovations.

Impact of device resistances in the performance of graphene-based terahertz photodetectors

In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices

Twist-controlled moiré superlattices (MSs) have emerged as a versatile platform for realizing artificial systems with complex electronic spectra. The combination of Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) can give rise to an interesting MS, which has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and the electronic ratchet effect. Yet, the understanding of the electronic properties of BLG/hBN MS has, at present, remained fairly limited. Here, we combine magneto-transport and low-energy sub-THz excitation to gain insights into the properties of this MS. We demonstrate that the alignment between BLG and hBN crystal lattices results in the emergence of compensated semimetals at some integer fillings of the moiré bands, separated by van Hove singularities where the Lifshitz transition occurs. A particularly pronounced semimetal develops when eight holes reside in the moiré unit cell, where coexisting high-mobility electron and hole systems feature strong magnetoresistance reaching 2350% already at B = 0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, indicating an orbital magnetization characterized by a strongly enhanced effective gv-factor of 340. Finally, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multifaceted analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in van der Waals materials and provides a comprehensive understanding of the BLG/hBN MS.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Optical properties and plasmons in moiré structures

The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optical properties such as optical conductivity, dielectric function, non-linear optical response, and plasmons in moiré structures composed of graphene, hexagonal boron nitride (hBN), and/or transition metal dichalcogenides. Firstly, a comprehensive introduction to the widely employed methodology on optical properties is presented. After, moiré potential induced optical conductivity and plasmons in non-twisted structures are reviewed, such as single layer graphene-hBN, bilayer graphene-hBN and graphene-metal moiré heterostructures. Next, recent investigations of twist-angle dependent optical response and plasmons are addressed in twisted moiré structures. Additionally, we discuss how optical properties and plasmons could contribute to the understanding of the many-body effects and superconductivity observed in moiré structures.

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley-Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.

Symmetric Kondo Lattice States in Doped Strained Twisted Bilayer Graphene

We use the topological heavy fermion (THF) model and its Kondo lattice (KL) formulation to study the possibility of a symmetric Kondo (SK) state in twisted bilayer graphene. Via a large-N approximation, we find a SK state in the KL model at fillings ν=0,±1,±2 where a KL model can be constructed. In the SK state, all symmetries are preserved and the local moments are Kondo screened by the conduction electrons. At the mean-field level of the THF model at ν=0,±1,±2,±3 we also find a similar symmetric state that is adiabatically connected to the symmetric Kondo state. We study the stability of the symmetric state by comparing its energy with the ordered (symmetry-breaking) states found in [H. Hu et al., Phys. Rev. Lett. 131, 026502 (2023).PRLTAO0031-900710.1103/PhysRevLett.131.026502, Z.-D. Song and B. A. Bernevig, Phys. Rev. Lett. 129, 047601 (2022).PRLTAO0031-900710.1103/PhysRevLett.129.047601] and find the ordered states to have lower energy at ν=0,±1,±2. However, moving away from integer fillings by doping the light bands, our mean-field calculations find the energy difference between the ordered state and the symmetric state to be reduced, which suggests the loss of ordering and a tendency toward Kondo screening. In order to include many-body effects beyond the mean-field approximation, we also performed dynamical mean-field theory calculations on the THF model in the nonordered phase. The spin susceptibility follows a Curie behavior at ν=0,±1,±2 down to ∼2  K where the onset of screening of the local moment becomes visible. This hints to very low Kondo temperatures at these fillings, in agreement with the outcome of our mean-field calculations. At noninteger filling ν=±0.5,±0.8,±1.2 dynamical mean-field theory shows deviations from a 1/T susceptibility at much higher temperatures, suggesting a more effective screening of local moments with doping. Finally, we study the effect of a C_{3z}-rotational-symmetry-breaking strain via mean-field approaches and find that a symmetric phase (that only breaks C_{3z} symmetry) can be stabilized at sufficiently large strain at ν=0,±1,±2. Our results suggest that a symmetric Kondo phase is strongly suppressed at integer fillings, but could be stabilized either at noninteger fillings or by applying strain.

Kondo Lattice Model of Magic-Angle Twisted-Bilayer Graphene: Hund's Rule, Local-Moment Fluctuations, and Low-Energy Effective Theory

We apply a generalized Schrieffer-Wolff transformation to the extended Anderson-like topological heavy fermion (THF) model for the magic-angle (θ=1.05°) twisted bilayer graphene (MATBLG) [Phys. Rev. Lett. 129, 047601 (2022)PRLTAO0031-900710.1103/PhysRevLett.129.047601], to obtain its Kondo lattice limit. In this limit localized f electrons on a triangular lattice interact with topological conduction c electrons. By solving the exact limit of the THF model, we show that the integer fillings ν=0,±1,±2 are controlled by the heavy f electrons, while ν=±3 is at the border of a phase transition between two f-electron fillings. For ν=0,±1,±2, we then calculate the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between the f moments in the full model and analytically prove the SU(4) Hund's rule for the ground state which maintains that two f electrons fill the same valley-spin flavor. Our (ferromagnetic interactions in the) spin model dramatically differ from the usual Heisenberg antiferromagnetic interactions expected at strong coupling. We show the ground state in some limits can be found exactly by employing a positive semidefinite "bond-operators" method. We then compute the excitation spectrum of the f moments in the ordered ground state, prove the stability of the ground state favored by RKKY interactions, and discuss the properties of the Goldstone modes, the (reason for the accidental) degeneracy of (some of) the excitation modes, and the physics of their phase stiffness. We develop a low-energy effective theory for the f moments and obtain analytic expressions for the dispersion of the collective modes. We discuss the relevance of our results to the spin-entropy experiments in TBG.

Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry

We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a configuration of a field-effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find that the presence of the helicity- and phase-sensitive interference part of the photovoltaic response is a universal phenomenon which is obtained in the systems of different dimensionality with different single-particle spectrum. Its magnitude is a characteristic of the plasma wave decay length. This opens up a wide avenue for applications in the area of plasmonic interferometry.

Twist dependent magneto-optical response in twisted bilayer graphene

By employing a linearised Boltzmann equation, we calculate the magneto-optical properties of twisted bilayer graphene using non-magnetic wave functions. Both transverse and longitudinal responses are calculated up to the second order in applied magnetic field with their twist angle and Fermi level dependence examined. We find that increasing the twist angle increases the transverse metallic response so long as the Fermi level remains below the upper conduction band. Interlayer transitions provide an appreciable enhancement when the Fermi level traverses the gap between the two conduction bands. Interlayer transitions are also responsible for a nonzero anomalous Hall conductivity in this model. As the Fermi level moves towards zero, the longitudinal response begins to dominate and a highly anisotropic negative magneto-resistance is observed.