1
|
Chen M, Wang Y, Zhao Z. Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity. ACS NANO 2022; 16:17263-17273. [PMID: 36129770 DOI: 10.1021/acsnano.2c07968] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.
Collapse
Affiliation(s)
- Meng Chen
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ziran Zhao
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| |
Collapse
|
2
|
Čižas V, Subačius L, Alexeeva NV, Seliuta D, Hyart T, Köhler K, Alekseev KN, Valušis G. Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice. PHYSICAL REVIEW LETTERS 2022; 128:236802. [PMID: 35749173 DOI: 10.1103/physrevlett.128.236802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2021] [Accepted: 05/04/2022] [Indexed: 06/15/2023]
Abstract
Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum semiconductor superlattices allow us to investigate high-frequency phenomena induced by the Bragg reflections and negative differential velocity of the miniband electrons. Effects of parametric gain in the superlattices at different strengths of dissipation have been earlier discussed in a number of theoretical works, but their experimental demonstrations are so far absent. Here, we report on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice subjected to a dc bias and a microwave pump. We argue that the dissipative parametric mechanism originates from a periodic variation of the negative differential velocity. It enforces excitation of slow electrostatic waves in the superlattice that provide a significant enhancement of the gain coefficient. This work paves the way for a development of a miniature solid-state parametric generator of GHz-THz frequencies operating at room temperature.
Collapse
Affiliation(s)
- Vladislovas Čižas
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
| | - Liudvikas Subačius
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
| | - Natalia V Alexeeva
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
| | - Dalius Seliuta
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
| | - Timo Hyart
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Avenue Lotników 32/46, 02-668 Warsaw, Poland
- Department of Applied Physics, Aalto University, 00076 Aalto, Espoo, Finland
| | - Klaus Köhler
- Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, Freiburg D-79108, Germany
| | - Kirill N Alekseev
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
- Department of Physics, Loughborough University, Loughborough LE11 3TU, United Kingdom
| | - Gintaras Valušis
- Department of Optoelectronics, Center for Physical Sciences and Technology, Saulėtekio Avenue 3, LT-10257 Vilnius, Lithuania
- Institute of Photonics and Nanotechnology, Department of Physics, Vilnius University, Saulėtekio Ave. 3, LT-10257 Vilnius, Lithuania
| |
Collapse
|
3
|
Matyushkin Y, Danilov S, Moskotin M, Fedorov G, Bochin A, Gorbenko I, Kachorovskii V, Ganichev S. Carbon nanotubes for polarization sensitive terahertz plasmonic interferometry. OPTICS EXPRESS 2021; 29:37189-37199. [PMID: 34808796 DOI: 10.1364/oe.435416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Accepted: 09/13/2021] [Indexed: 06/13/2023]
Abstract
We report on helicity sensitive photovoltaic terahertz radiation response of a carbon nanotube made in a configuration of a field-effect transistor. We find that the magnitude of the rectified voltage is different for clockwise and anticlockwise circularly polarized radiation. We demonstrate that this effect is a fingerprint of the plasma waves interference in the transistor channel. We also find that the presence of the helicity- and phase-sensitive interference part of the photovoltaic response is a universal phenomenon which is obtained in the systems of different dimensionality with different single-particle spectrum. Its magnitude is a characteristic of the plasma wave decay length. This opens up a wide avenue for applications in the area of plasmonic interferometry.
Collapse
|
4
|
Liu J, Li X, Jiang R, Yang K, Zhao J, Khan SA, He J, Liu P, Zhu J, Zeng B. Recent Progress in the Development of Graphene Detector for Terahertz Detection. SENSORS (BASEL, SWITZERLAND) 2021; 21:4987. [PMID: 34372224 PMCID: PMC8347591 DOI: 10.3390/s21154987] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 07/17/2021] [Accepted: 07/19/2021] [Indexed: 11/17/2022]
Abstract
Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.
Collapse
Affiliation(s)
- Jianlong Liu
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Xin Li
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Ruirui Jiang
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Kaiqiang Yang
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Jing Zhao
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Sayed Ali Khan
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China;
| | - Jiancheng He
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| | - Peizhong Liu
- Department of the Internet of Things Engineering, College of Engineering, Huaqiao University, Quanzhou 362000, China;
| | - Jinfeng Zhu
- Institute of Electromagnetics and Acoustics, School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China;
| | - Baoqing Zeng
- National Key Laboratory of Science and Technology on Vacuum Electronics, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (J.L.); (X.L.); (R.J.); (K.Y.); (J.Z.); (J.H.); (B.Z.)
| |
Collapse
|
5
|
Laser Patterning of Aligned Carbon Nanotubes Arrays: Morphology, Surface Structure, and Interaction with Terahertz Radiation. MATERIALS 2021; 14:ma14123275. [PMID: 34198489 PMCID: PMC8231912 DOI: 10.3390/ma14123275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Revised: 06/04/2021] [Accepted: 06/08/2021] [Indexed: 11/17/2022]
Abstract
The patterning of arrays of aligned multi-walled carbon nanotubes (MWCNTs) allows creating metastructures for terahertz (THz) applications. Here, the strips and columns from MWCNTs vertically grown on silicon substrates are prepared using CO2 laser treatment. The tops of the patterned arrays are flat when the laser power is between 15 and 22 W, and craters appear there with increasing power. Laser treatment does not destroy the alignment of MWCNTs while removing their poorly ordered external layers. The products of oxidative destruction of these layers deposit on the surfaces of newly produced arrays. The oxygen groups resulting from the CO2 laser treatment improve the wettability of nanotube arrays with an epoxy resin. We show that the patterned MWCNT arrays absorb the THz radiation more strongly than the as-synthesized arrays. Moreover, the pattern influences the frequency behavior of the absorbance.
Collapse
|
6
|
Valušis G, Lisauskas A, Yuan H, Knap W, Roskos HG. Roadmap of Terahertz Imaging 2021. SENSORS (BASEL, SWITZERLAND) 2021; 21:4092. [PMID: 34198603 PMCID: PMC8232131 DOI: 10.3390/s21124092] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/27/2021] [Revised: 06/07/2021] [Accepted: 06/08/2021] [Indexed: 01/01/2023]
Abstract
In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.
Collapse
Affiliation(s)
- Gintaras Valušis
- Center for Physical Sciences and Technology (FTMC), Department of Optoelectronics, Saulėtekio Ave. 3, LT-10257 Vilnius, Lithuania
- Institute of Photonics and Nanotechnology, Department of Physics, Vilnius University, Saulėtekio Ave. 3, LT-10257 Vilnius, Lithuania
| | - Alvydas Lisauskas
- Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio Ave. 3, LT-10257 Vilnius, Lithuania;
- CENTERA Laboratories, Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;
| | - Hui Yuan
- Physikalisches Institut, Goethe-Universität, Max-von-Laue Straße 1, D-60438 Frankfurt am Main, Germany; (H.Y.); (H.G.R.)
| | - Wojciech Knap
- CENTERA Laboratories, Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland;
| | - Hartmut G. Roskos
- Physikalisches Institut, Goethe-Universität, Max-von-Laue Straße 1, D-60438 Frankfurt am Main, Germany; (H.Y.); (H.G.R.)
| |
Collapse
|