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Wang B, Huang Z, Xu X, Fan S, Zhao K, Zhu J. Giant thermal conductivity and strain thermal response of nitrogen substituted diamane: a machine-learning-based prediction. NANOSCALE 2024. [PMID: 39011749 DOI: 10.1039/d4nr01834f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
With the ongoing trend of seeking miniaturization and enhanced performance for electronic devices, effective thermal management has emerged as a critical concern. The discovery and investigation of high thermal conductivity (κ) materials have proved to be pivotal in addressing this challenge. This study aims to explore the distinctive properties and potential applications of nitrogen substituted diamane (NCCN), a two-dimensional material with a diamond-like structure composed of carbon and nitrogen atoms. This work systematically delves into NCCN's thermal, mechanical, and electrical properties. It is predicted that NCCN exhibits an exceptional κ, ∼2288 W m-1 K-1, at room temperature (300 K) by combining the machine-learning interatomic potential method and the phonon Boltzmann transport equation, surpassing that of H-diamane and rivaling that of diamond, and an impressive electronic band gap of ∼4.47 eV (PBE). For mechanical properties, the stress-strain relationship reveals that NCCN exhibits isotropic elastic properties and anisotropic tensile strengths. Additionally, the variations in NCCN's κ and electronic energy band structure under different strains underscore its substantial potential in the field of thermoelectric applications.
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Affiliation(s)
- Biao Wang
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
| | - Zhenqiao Huang
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong 999077, PR China
- Department of Physics & Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xingchun Xu
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
| | - Saifei Fan
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
| | - Kunlong Zhao
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
| | - Jiaqi Zhu
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
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2
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Lee HY, Wang Z, Chen G, Holtzman LN, Yan X, Amontree J, Zangiabadi A, Watanabe K, Taniguchi T, Barmak K, Kim P, Hone JC. In situ via Contact to hBN-Encapsulated Air-Sensitive Atomically Thin Semiconductors. ACS NANO 2024; 18:17111-17118. [PMID: 38952326 DOI: 10.1021/acsnano.4c03736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Establishing reliable electrical contacts to atomically thin materials is a prerequisite for both fundamental studies and applications yet remains a challenge. In particular, the development of contact techniques for air-sensitive monolayers has lagged behind, despite their unique properties and significant potential for applications. Here, we present a robust method to create contacts to device layers encapsulated within hexagonal boron nitride (hBN). This method uses plasma etching and metal deposition to create 'vias' in the hBN with graphene forming an atomically thin etch-stop. The resulting partially fluorinated graphene (PFG) protects the underlying device layer from air-induced degradation and damage during metal deposition. PFG is resistive in-plane but maintains high out-of-plane conductivity. The work function of the PFG/metal contact is tunable through the degree of fluorination, offering opportunities for contact engineering. Using the in situ via technique, we achieve ambipolar contact to air-sensitive monolayer 2H-molybdenum ditelluride (MoTe2) with more than 1 order of magnitude improvement in on-current density compared to previous literature. The complete encapsulation provides high reproducibility and long-term stability. The technique can be extended to other air-sensitive materials as well as air-stable materials, offering highly competitive device performance.
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Affiliation(s)
- Hae Yeon Lee
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Grace Chen
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Xingzhou Yan
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Jacob Amontree
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Amirali Zangiabadi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Philip Kim
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
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3
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Kim J, Moon D, Kim H, van der Zande AM, Lee GH. Ultrathin and Deformable Graphene Etch Mask for Fabrication of 3D Microstructures. ACS NANO 2024; 18:12325-12332. [PMID: 38686926 DOI: 10.1021/acsnano.4c01279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Three-dimensional (3D) microfabrication techniques play a crucial role across various research fields. These techniques enable the creation of functional 3D structures on the microscale, unlocking possibilities for diverse applications. However, conventional fabrication methods have limits in producing complex 3D structures, which require numerous fabrication steps that increase the costs. Graphene is an atomically thin material known for its deformability and impermeability to small gases and molecules, including reactive gases like XeF2. These features make graphene a potential candidate as an etch mask for 3D microfabrication. Here, we report the fabrication of various 3D microstructures using graphene etch masks directly grown and patterned on a Si substrate. The patterned graphene deforms and wraps the etched structures, allowing for the fabrication of complicated 3D microstructures, such as mushroom-like and step-like microstructures. As a practical demonstration of the graphene etch mask, we fabricate an omniphobic surface of reentrant 3D structures on a Si substrate. Our work provides a method for fabricating complex 3D microstructures using a graphene etch mask, contributing to advancements in etching and fabrication processes.
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Affiliation(s)
- Jiwoo Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Donghoon Moon
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Hyunchul Kim
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, Illinois 61801, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign (UIUC), Urbana, Illinois 61801, United States
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
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4
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Thakur MK, Haider G, Sonia FJ, Plšek J, Rodriguez A, Mishra V, Panda J, Gedeon O, Mergl M, Volochanskyi O, Valeš V, Frank O, Vejpravova J, Kalbáč M. Isotope Engineered Fluorinated Single and Bilayer Graphene: Insights into Fluorination Selectivity, Stability, and Defect Passivation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205575. [PMID: 36593530 DOI: 10.1002/smll.202205575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 12/03/2022] [Indexed: 06/17/2023]
Abstract
Tailoring the physicochemical properties of graphene through functionalization remains a major interest for next-generation technological applications. However, defect formation due to functionalization greatly endangers the intrinsic properties of graphene, which remains a serious concern. Despite numerous attempts to address this issue, a comprehensive analysis has not been conducted. This work reports a two-step fluorination process to stabilize the fluorinated graphene and obtain control over the fluorination-induced defects in graphene layers. The structural, electronic and isotope-mass-sensitive spectroscopic characterization unveils several not-yet-resolved facts, such as fluorination sites and CF bond stability in partially-fluorinated graphene (F-SLG). The stability of fluorine has been correlated to fluorine co-shared between two graphene layers in fluorinated-bilayer-graphene (F-BLG). The desorption energy of co-shared fluorine is an order of magnitude higher than the CF bond energy in F-SLG due to the electrostatic interaction and the inhibition of defluorination in the F-BLG. Additionally, F-BLG exhibits enhanced light-matter interaction, which has been utilized to design a proof-of-concept field-effect phototransistor that produces high photocurrent response at a time <200 µs. Thus, the study paves a new avenue for the in-depth understanding and practical utilization of fluorinated graphenic carbon.
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Affiliation(s)
- Mukesh Kumar Thakur
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Golam Haider
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Farjana J Sonia
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Jan Plšek
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Alvaro Rodriguez
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Vipin Mishra
- Department of Glass and Ceramics, University of Chemistry and Technology, Prague, Technická 5, 16628, Prague 6, Czech Republic
| | - Jaganandha Panda
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Ondrej Gedeon
- Department of Glass and Ceramics, University of Chemistry and Technology, Prague, Technická 5, 16628, Prague 6, Czech Republic
| | - Martin Mergl
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Oleksandr Volochanskyi
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Václav Valeš
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Otakar Frank
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
| | - Jana Vejpravova
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116, Prague 2, Czech Republic
| | - Martin Kalbáč
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 18200, Prague 8, Czech Republic
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5
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Carpenter J, Kim H, Suarez J, van der Zande A, Miljkovic N. The Surface Energy of Hydrogenated and Fluorinated Graphene. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2429-2436. [PMID: 36563177 DOI: 10.1021/acsami.2c18329] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The surface energy of graphene and its chemical derivatives governs fundamental interfacial interactions like molecular assembly, wetting, and doping. However, quantifying the surface energy of supported two-dimensional (2D) materials, such as graphene, is difficult because (1) they are so thin that electrostatic interactions emanating from the underlying substrate are not completely screened, (2) the contribution from the monolayer is sensitive to its exact chemical state, and (3) the adsorption of airborne contaminants, as well as contaminants introduced during transfer processing, screens the electrostatic interactions from the monolayer and underlying substrate, changing the determined surface energy. Here, we determine the polar and dispersive surface energy of bare, fluorinated, and hydrogenated graphene through contact angle measurements with water and diiodomethane. We accounted for many contributing factors, including substrate surface energies and combating adsorption of airborne contaminants. Hydrogenating graphene raises its polar surface energy with little effect on its dispersive surface energy. Fluorinating graphene lowers its dispersive surface energy with a substrate-dependent effect on its polar surface energy. These results unravel how changing the chemical structure of graphene modifies its surface energy, with applications for hybrid nanomaterials, bioadhesion, biosensing, and thin-film assembly.
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Affiliation(s)
- James Carpenter
- Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, United States
| | - Hyunchul Kim
- Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, United States
| | - Jules Suarez
- Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, United States
| | - Arend van der Zande
- Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, United States
| | - Nenad Miljkovic
- Department of Mechanical Science and Engineering, University of Illinois, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, United States
- Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois 61801, United States
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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6
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Kafle P, Huang S, Park KS, Zhang F, Yu H, Kasprzak CE, Kim H, Schroeder CM, van der Zande AM, Diao Y. Role of Interfacial Interactions in the Graphene-Directed Assembly of Monolayer Conjugated Polymers. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:6984-6995. [PMID: 35613042 DOI: 10.1021/acs.langmuir.2c00570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Development of graphene-organic hybrid electronics is one of the most promising directions for next-generation electronic materials. However, it remains challenging to understand the graphene-organic semiconductor interactions right at the interface, which is key to designing hybrid electronics. Herein, we study the influence of graphene on the multiscale morphology of solution-processed monolayers of conjugated polymers (PII-2T, DPP-BTz, DPP2T-TT, and DPP-T-TMS). The strong interaction between graphene and PII-2T was manifested in the high fiber density and high film coverage of monolayer films deposited on graphene compared to plasma SiO2 substrates. The monolayer films on graphene also exhibited a higher relative degree of crystallinity and dichroic ratio or polymer alignment, i.e., higher degree of order. Raman spectroscopy revealed the increased backbone planarity of the conjugated polymers upon deposition on graphene as well as the existence of electronic interaction across the interface. This speculation was further substantiated by the results of photoelectron spectroscopy (XPS and UPS) of PII-2T, which showed a decrease in binding energy of several atomic energy levels, movement of the Fermi level toward HOMO, and an increase in work function, all of which indicate p-doping of the polymer. Our results provide a new level of understanding on graphene-polymer interactions at nanoscopic interfaces and the consequent impact on multiscale morphology, which will aid in the design of efficient graphene-organic hybrid electronics.
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Affiliation(s)
- Prapti Kafle
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Siyuan Huang
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Kyung Sun Park
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Fengjiao Zhang
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hao Yu
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Caroline E Kasprzak
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Hyunchul Kim
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Charles M Schroeder
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Ying Diao
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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7
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Tiwari SK, Pandey R, Wang N, Kumar V, Sunday OJ, Bystrzejewski M, Zhu Y, Mishra YK. Progress in Diamanes and Diamanoids Nanosystems for Emerging Technologies. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105770. [PMID: 35174979 PMCID: PMC9008418 DOI: 10.1002/advs.202105770] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/12/2022] [Indexed: 06/14/2023]
Abstract
New materials are the backbone of their technology-driven modern civilization and at present carbon nanostructures are the leading candidates that have attracted huge research activities. Diamanes and diamanoids are the new nanoallotropes of sp3 hybridized carbon which can be fabricated by proper functionalization, substitution, and via Birch reduction under controlled pressure using graphitic system as a precursor. These nanoallotropes exhibit outstanding electrical, thermal, optical, vibrational, and mechanical properties, which can be an asset for new technologies, especially for quantum devices, photonics, and space technologies. Moreover, the features like wide bandgap, tunable thermal conductivity, excellent thermal insulation, etc. make diamanes and diamanoids ideal candidates for nano-electrical devices, nano-resonators, optical waveguides, and the next generation thermal management systems. In this review, diamanes and diamanoids are discussed in detail in terms of its historical prospect, method of synthesis, structural features, broad properties, and cutting-edge applications. Additionally, the prospects of diamanes and diamanoids for new applications are carefully discussed. This review aims to provide a critical update with important ideas for a new generation of quantum devices based on diamanes and diamanoids which are going to be an important topic in the future of carbon nanotechnology.
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Affiliation(s)
- Santosh K. Tiwari
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Raunak Pandey
- Department of Chemical Science and EngineeringKathmandu UniversityDhulikhel44600Nepal
| | - Nannan Wang
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
| | - Vijay Kumar
- Department of PhysicsNational Institute of Technology SrinagarHazratbalJammu and Kashmir19006India
- Department of PhysicsUniversity of the Free StateP.O. Box 339BloemfonteinZA9300South Africa
| | - Olusegun J. Sunday
- Faculty of ChemistryUniversity of Warsaw1 Pasteur Str.Warsaw02‐093Poland
| | | | - Yanqiu Zhu
- Key Laboratory of New Processing Technology for Nonferrous Metals and MaterialsMinistry of EducationSchool of ResourcesEnvironment and MaterialsGuangxi UniversityNanning530600China
- College of EngineeringMathematics and Physical SciencesUniversity of ExeterExeterEX4 4QFUK
| | - Yogendra Kumar Mishra
- Smart MaterialsNanoSYDMads Clausen InstituteUniversity of Southern DenmarkAlsion 2Sønderborg6400Denmark
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8
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Chen X, Fan K, Liu Y, Li Y, Liu X, Feng W, Wang X. Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2101665. [PMID: 34658081 DOI: 10.1002/adma.202101665] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2021] [Revised: 05/27/2021] [Indexed: 05/11/2023]
Abstract
Fluorinated graphene (FG), as an emerging member of the graphene derivatives family, has attracted wide attention on account of its excellent performances and underlying applications. The introduction of a fluorine atom, with the strongest electronegativity (3.98), greatly changes the electron distribution of graphene, resulting in a series of unique variations in optical, electronic, magnetic, interfacial properties and so on. Herein, recent advances in the study of FG from synthesis to applications are introduced, and the relationship between its structure and properties is summarized in detail. Especially, the functional chemistry of FG has been thoroughly analyzed in recent years, which has opened a universal route for the functionalization and even multifunctionalization of FG toward various graphene derivatives, which further broadens its applications. Moreover, from a particular angle, the structure engineering of FG such as the distribution pattern of fluorine atoms and the regulation of interlayer structure when advanced nanotechnology gets involved is summarized. Notably, the elaborated structure engineering of FG is the key factor to optimize the corresponding properties for potential applications, and is also an up-to-date research hotspot and future development direction. Finally, perspectives and prospects for the problems and challenges in the study of FG are put forward.
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Affiliation(s)
- Xinyu Chen
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Kun Fan
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yu Li
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xiangyang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Wei Feng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xu Wang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
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9
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Sorokin PB, Yakobson BI. Two-Dimensional Diamond-Diamane: Current State and Further Prospects. NANO LETTERS 2021; 21:5475-5484. [PMID: 34213910 DOI: 10.1021/acs.nanolett.1c01557] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional diamond, or diamane, is an ultrathin film with unique physical properties that combine the record values of the bulk crystal with the exciting features caused by the nanoscale nature. At the current stage of research, the diamane properties are mostly studied theoretically, and the main experimental efforts are directed at its synthesis. The latter is the trickiest problem since traditional methods involving the application of high pressure are not fully suitable due to the influence of surface effects. For diamane research, this poses a number of challenges, whose description is the main purpose and scope of this review. The paper also discusses the progress made so far and outlines the prospects for this field, at the crossroads of the timeless diamond and decade-old graphene.
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Affiliation(s)
- Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russian Federation
| | - Boris I Yakobson
- Department of Mechanical Engineering & Materials Science and the Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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