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Bhowmik S, Ghosh A, Chandni U. Emergent phases in graphene flat bands. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:096401. [PMID: 39059412 DOI: 10.1088/1361-6633/ad67ed] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Accepted: 07/26/2024] [Indexed: 07/28/2024]
Abstract
Electronic correlations in two-dimensional materials play a crucial role in stabilising emergent phases of matter. The realisation of correlation-driven phenomena in graphene has remained a longstanding goal, primarily due to the absence of strong electron-electron interactions within its low-energy bands. In this context, magic-angle twisted bilayer graphene has recently emerged as a novel platform featuring correlated phases favoured by the low-energy flat bands of the underlying moiré superlattice. Notably, the observation of correlated insulators and superconductivity, and the interplay between these phases have garnered significant attention. A wealth of correlated phases with unprecedented tunability was discovered subsequently, including orbital ferromagnetism, Chern insulators, strange metallicity, density waves, and nematicity. However, a comprehensive understanding of these closely competing phases remains elusive. The ability to controllably twist and stack multiple graphene layers has enabled the creation of a whole new family of moiré superlattices with myriad properties. Here, we review the progress and development achieved so far, encompassing the rich phase diagrams offered by these graphene-based moiré systems. Additionally, we discuss multiple phases recently observed in non-moiré multilayer graphene systems. Finally, we outline future opportunities and challenges for the exploration of hidden phases in this new generation of moiré materials.
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Affiliation(s)
- Saisab Bhowmik
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
| | - U Chandni
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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Rycerz A, Rycerz K, Witkowski P. Sub-Sharvin Conductance and Incoherent Shot-Noise in Graphene Disks at Magnetic Field. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3067. [PMID: 38998150 PMCID: PMC11487447 DOI: 10.3390/ma17133067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2024] [Revised: 06/03/2024] [Accepted: 06/19/2024] [Indexed: 07/14/2024]
Abstract
Highly doped graphene samples show reduced conductance and enhanced shot-noise power compared with standard ballistic systems in two-dimensional electron gas. These features can be understood within a model that assumes incoherent scattering of Dirac electrons between two interfaces separating the sample and the leads. Here we find, by adopting the above model for the edge-free (Corbino) geometry and by computer simulation of quantum transport, that another graphene-specific feature should be observable when the current flow through a doped disk is blocked by a strong magnetic field. When the conductance drops to zero, the Fano factor approaches the value of F≈0.56, with a very weak dependence on the ratio of the disk radii. The role of finite source-drain voltages and the system behavior when the electrostatic potential barrier is tuned from a rectangular to a parabolic shape are also discussed.
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Affiliation(s)
- Adam Rycerz
- Institute for Theoretical Physics, Jagiellonian University, Łojasiewicza 11, PL-30348 Kraków, Poland;
| | - Katarzyna Rycerz
- Faculty of Computer Science, AGH University of Krakow, al. Mickiewicza 30, PL-30059 Kraków, Poland
| | - Piotr Witkowski
- Institute for Theoretical Physics, Jagiellonian University, Łojasiewicza 11, PL-30348 Kraków, Poland;
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Rycerz A, Rycerz K, Witkowski P. Thermoelectric Properties of the Corbino Disk in Graphene. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4250. [PMID: 37374435 PMCID: PMC10305522 DOI: 10.3390/ma16124250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Revised: 06/03/2023] [Accepted: 06/05/2023] [Indexed: 06/29/2023]
Abstract
Thermopower and the Lorentz number for an edge-free (Corbino) graphene disk in the quantum Hall regime is calculated within the Landauer-Büttiker formalism. By varying the electrochemical potential, we find that amplitude of the Seebeck coefficient follows a modified Goldsmid-Sharp relation, with the energy gap defined by the interval between the zero and the first Landau levels in bulk graphene. An analogous relation for the Lorentz number is also determined. Thus, these thermoelectric properties are solely defined by the magnetic field, the temperature, the Fermi velocity in graphene, and fundamental constants including the electron charge, the Planck and Boltzmann constants, being independent of the geometric dimensions of the system. This suggests that the Corbino disk in graphene may operate as a thermoelectric thermometer, allowing to measure small temperature differences between two reservoirs, if the mean temperature magnetic field are known.
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Affiliation(s)
- Adam Rycerz
- Institute for Theoretical Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Krakow, Poland
| | - Katarzyna Rycerz
- Institute of Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland
| | - Piotr Witkowski
- Institute for Theoretical Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Krakow, Poland
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Mahapatra PS, Garg M, Ghawri B, Jayaraman A, Watanabe K, Taniguchi T, Ghosh A, Chandni U. Quantum Hall Interferometry in Triangular Domains of Marginally Twisted Bilayer Graphene. NANO LETTERS 2022; 22:5708-5714. [PMID: 35796713 DOI: 10.1021/acs.nanolett.2c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Quantum Hall (QH) interferometry provides an archetypal platform for the experimental realization of braiding statistics of fractional QH states. However, the complexity of observing fractional statistics requires phase coherence over the length of the interferometer, as well as suppression of Coulomb charging energy. Here, we demonstrate a new type of QH interferometer based on marginally twisted bilayer graphene (mtBLG), with a twist angle θ ≈ 0.16°. With the device operating in the QH regime, we observe distinct signatures of electronic Fabry-Pérot and Aharonov-Bohm oscillations of the magneto-thermopower in the density-magnetic field phase space, at Landau level filling factors ν = 4, 8. We find that QH interference effects are intrinsic to the triangular AB/BA domains in mtBLG that show diminished Coulomb charging effects. Our results demonstrate phase-coherent interference of QH edge modes without any additional gate-defined complex architecture, which may be beneficial in experimental realizations of non-Abelian braiding statistics.
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Affiliation(s)
| | - Manjari Garg
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Bhaskar Ghawri
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Aditya Jayaraman
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
| | - U Chandni
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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Ghawri B, Mahapatra PS, Garg M, Mandal S, Bhowmik S, Jayaraman A, Soni R, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Banerjee S, Chandni U, Ghosh A. Breakdown of semiclassical description of thermoelectricity in near-magic angle twisted bilayer graphene. Nat Commun 2022; 13:1522. [PMID: 35314702 PMCID: PMC8938509 DOI: 10.1038/s41467-022-29198-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Accepted: 02/24/2022] [Indexed: 11/09/2022] Open
Abstract
AbstractThe planar assembly of twisted bilayer graphene (tBLG) hosts multitude of interaction-driven phases when the relative rotation is close to the magic angle (θm = 1.1∘). This includes correlation-induced ground states that reveal spontaneous symmetry breaking at low temperature, as well as possibility of non-Fermi liquid (NFL) excitations. However, experimentally, manifestation of NFL effects in transport properties of twisted bilayer graphene remains ambiguous. Here we report simultaneous measurements of electrical resistivity (ρ) and thermoelectric power (S) in tBLG for several twist angles between θ ~ 1.0 − 1.7∘. We observe an emergent violation of the semiclassical Mott relation in the form of excess S close to half-filling for θ ~ 1.6∘ that vanishes for θ ≳ 2∘. The excess S (≈2 μV/K at low temperatures T ~ 10 K at θ ≈ 1.6∘) persists upto ≈40 K, and is accompanied by metallic T-linear ρ with transport scattering rate (τ−1) of near-Planckian magnitude τ−1 ~ kBT/ℏ. Closer to θm, the excess S was also observed for fractional band filling (ν ≈ 0.5). The combination of non-trivial electrical transport and violation of Mott relation provides compelling evidence of NFL physics intrinsic to tBLG.
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Debnath R, Sett S, Biswas R, Raghunathan V, Ghosh A. A simple fabrication strategy for orientationally accurate twisted heterostructures. NANOTECHNOLOGY 2021; 32:455705. [PMID: 34298522 DOI: 10.1088/1361-6528/ac1756] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Accepted: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals (vdW) heterostructure is a type of metamaterial where multiple layers of 2D materials are vertically aligned at controlled misorientation. The relative rotation in between the adjacent layers, or the twist angle between them plays a crucial role in changing the electronic band structure of the superlattice. The assembly of multi-layers of precisely twisted two dimensional layered materials requires knowledge of the atomic structure at the edge of the flake. It may be artificially created by the 'tear and stack' process. Otherwise, the crystallographic orientation needs to be determined through invasive processes such as transmission electron microscopy or scanning tunneling microscopy, and via second-harmonic generation (SHG). Here, we demonstrate a simple and elegant transfer protocol using only an optical microscope as a edge identifier tool through which, controlled transfer of twisted homobilayer and heterobilayer transition metal dichalcogenides is performed with close to 100% yield. The fabricated twisted vdW heterostructures have been characterized by SHG, Raman spectroscopy and photoluminiscence spectroscopy, confirming the desired twist angle within ∼0.5° accuracy. The presented method is reliable, quick and prevents the use of invasive tools which is desirable for reproducible device functionalities.
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Affiliation(s)
- Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Rabindra Biswas
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Varun Raghunathan
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India
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