1
|
Doderer M, Keller K, Winiger J, Baumann M, Messner A, Moor D, Chelladurai D, Fedoryshyn Y, Leuthold J, Strait J, Agrawal A, Lezec HJ, Haffner C. Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics. NANO LETTERS 2024; 24:859-865. [PMID: 38051536 PMCID: PMC10811661 DOI: 10.1021/acs.nanolett.3c03684] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/27/2023] [Accepted: 11/27/2023] [Indexed: 12/07/2023]
Abstract
Broadband near-infrared light emitting tunnel junctions are demonstrated with efficient coupling to a silicon photonic waveguide. The metal oxide semiconductor devices show long hybrid photonic-plasmonic mode propagation lengths of approximately 10 μm and thus can be integrated into an overcoupled resonant cavity with quality factor Q ≈ 49, allowing for tens of picowatt near-infrared light emission coupled directly into a waveguide. The electron inelastic tunneling transition rate and the cavity mode density are modeled, and the transverse magnetic (TM) hybrid mode excitation rate is derived. The results coincide well with polarization resolved experiments. Additionally, current-stressed devices are shown to emit unpolarized light due to radiative recombination inside the silicon electrode.
Collapse
Affiliation(s)
- Michael Doderer
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Killian Keller
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Joel Winiger
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Michael Baumann
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Andreas Messner
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - David Moor
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Daniel Chelladurai
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Yuriy Fedoryshyn
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Juerg Leuthold
- Institute
of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Jared Strait
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Amit Agrawal
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Henri J. Lezec
- Physical
Measurement Laboratory, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Christian Haffner
- Interuniversity
Microelectronics Centre (imec), Remisebosweg 1, 3001 Leuven, Belgium
| |
Collapse
|
2
|
Erez-Cohen O, Brontvein O, Bar-Joseph I. Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization. NANO LETTERS 2023; 23:2233-2238. [PMID: 36856602 PMCID: PMC10037326 DOI: 10.1021/acs.nanolett.2c04863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/25/2023] [Indexed: 06/18/2023]
Abstract
We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.
Collapse
Affiliation(s)
- Omer Erez-Cohen
- Department
of Condensed Matter Physics, Weizmann Institute
of Science, Rehovot 7610001, Israel
| | - Olga Brontvein
- Department
of Chemical Research Support, Weizmann Institute
of Science, Rehovot 7610001, Israel
| | - Israel Bar-Joseph
- Department
of Condensed Matter Physics, Weizmann Institute
of Science, Rehovot 7610001, Israel
| |
Collapse
|
3
|
Yu Y, Gao L, Niu X, Liu K, Li R, Yang D, Zeng H, Wang HQ, Ni Z, Lu J. Deciphering Adverse Detrapped Hole Transfer in Hot-Electron Photoelectric Conversion at Infrared Wavelengths. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210157. [PMID: 36732915 DOI: 10.1002/adma.202210157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Revised: 01/01/2023] [Indexed: 06/18/2023]
Abstract
Hot-carrier devices are promising alternatives for enabling path breaking photoelectric conversion. However, existing hot-carrier devices suffer from low efficiencies, particularly in the infrared region, and ambiguous physical mechanisms. In this work, the competitive interfacial transfer mechanisms of detrapped holes and hot electrons in hot-carrier devices are discovered. Through photocurrent polarity research and optical-pump-THz-probe (OPTP) spectroscopy, it is verified that detrapped hole transfer (DHT) and hot-electron transfer (HET) dominate the low- and high-density excitation responses, respectively. The photocurrent ratio assigned to DHT and HET increases from 6.6% to over 1133.3% as the illumination intensity decreases. DHT induces severe degeneration of the external quantum efficiency (EQE), especially at low illumination intensities. The EQE of a hot-electron device can theoretically increase by over two orders of magnitude at 10 mW cm-2 through DHT elimination. The OPTP results show that competitive transfer arises from the carrier oscillation type and carrier-density-related Coulomb screening. The screening intensity determines the excitation weight and hot-electron cooling scenes and thereby the transfer dynamics.
Collapse
Affiliation(s)
- Yuanfang Yu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
| | - Lei Gao
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
| | - Xianghong Niu
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, 210023, P. R. China
| | - Kaiyang Liu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
| | - Ruizhi Li
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
| | - Dandan Yang
- School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, 225002, P. R. China
- Institute of Optoelectronics and Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Haibo Zeng
- Institute of Optoelectronics and Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Hui-Qiong Wang
- Department of Physics and Department of New Energy Science and Engineering, Xiamen University Malaysia, Sepang, 43900, Malaysia
- Department of Physics, Xiamen University, Xiamen, 361005, P. R. China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
- Purple Mountain Laboratories, Nanjing, 211111, P. R. China
| | - Junpeng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, P. R. China
| |
Collapse
|
4
|
Tang Y, Harutyunyan H. Optical properties of plasmonic tunneling junctions. J Chem Phys 2023; 158:060901. [PMID: 36792491 DOI: 10.1063/5.0128822] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023] Open
Abstract
Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.
Collapse
Affiliation(s)
- Yuankai Tang
- Department of Physics, Emory University, Atlanta, Georgia 30322, USA
| | - Hayk Harutyunyan
- Department of Physics, Emory University, Atlanta, Georgia 30322, USA
| |
Collapse
|
5
|
Zhu Y, Cui L, Abbasi M, Natelson D. Tuning Light Emission Crossovers in Atomic-Scale Aluminum Plasmonic Tunnel Junctions. NANO LETTERS 2022; 22:8068-8075. [PMID: 36197739 DOI: 10.1021/acs.nanolett.2c02013] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Atomic-sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic tunnel junctions have been proposed, from single-electron or higher-order multielectron inelastic tunneling to recombination from a steady-state population of hot carriers. By progressively altering the tunneling conductance of an aluminum junction, we tune the dominant light emission mechanism through these possibilities for the first time, finding quantitative agreement with theory in each regime. Improved plasmonic resonances in the energy range of interest increase photon yields by 2 orders of magnitude. These results demonstrate that the dominant emission mechanism is set by a combination of tunneling rate, hot carrier relaxation time scales, and junction plasmonic properties.
Collapse
Affiliation(s)
- Yunxuan Zhu
- Department of Physics and Astronomy, Rice University, Houston, Texas77005, United States
| | - Longji Cui
- Paul M. Rady Department of Mechanical Engineering, University of Colorado, Boulder, Colorado80309, United States
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado80309, United States
| | - Mahdiyeh Abbasi
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas77005, United States
| | - Douglas Natelson
- Department of Physics and Astronomy, Rice University, Houston, Texas77005, United States
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas77005, United States
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas77005, United States
| |
Collapse
|
6
|
Lebedev DV, Shkoldin VA, Mozharov AM, Larin AO, Permyakov DV, Samusev AK, Petukhov AE, Golubok AO, Arkhipov AV, Mukhin IS. Nanoscale Electrically Driven Light Source Based on Hybrid Semiconductor/Metal Nanoantenna. J Phys Chem Lett 2022; 13:4612-4620. [PMID: 35588008 DOI: 10.1021/acs.jpclett.2c00986] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A micro- or nanosized electrically controlled source of optical radiation is one of the key elements in optoelectronic systems. The phenomenon of light emission via inelastic tunneling (LEIT) of electrons through potential barriers or junctions opens up new possibilities for development of such sources. In this work, we present a simple approach for fabrication of nanoscale electrically driven light sources based on LEIT. We employ STM lithography to locally modify the surface of a Si/Au film stack via heating, which is enabled by a high-density tunnel current. Using the proposed technique, hybrid Si/Au nanoantennas with a minimum diameter of 60 nm were formed. Studying both electronic and optical properties of the obtained nanoantennas, we confirm that the resulting structures can efficiently emit photons in the visible range because of inelastic scattering of electrons. The proposed approach allows for fabrication of nanosized hybrid nanoantennas and studying their properties using STM.
Collapse
Affiliation(s)
- Denis V Lebedev
- St. Petersburg Academic University, 8/3 Khlopina str., St. Petersburg 194021, Russia
- Saint Petersburg State University, 7/9 Universitetskaya nab., St. Petersburg 199034, Russia
- Institute for Analytical Instrumentation RAS, 26 Rizhskii pr., St. Petersburg 190103, Russia
| | - Vitaly A Shkoldin
- St. Petersburg Academic University, 8/3 Khlopina str., St. Petersburg 194021, Russia
- ITMO University, 9 Kronverksky pr., St. Petersburg 197101, Russia
| | - Alexey M Mozharov
- Saint Petersburg State University, 7/9 Universitetskaya nab., St. Petersburg 199034, Russia
| | - Artem O Larin
- ITMO University, 9 Kronverksky pr., St. Petersburg 197101, Russia
| | | | - Anton K Samusev
- ITMO University, 9 Kronverksky pr., St. Petersburg 197101, Russia
| | - Anatoly E Petukhov
- Saint Petersburg State University, 7/9 Universitetskaya nab., St. Petersburg 199034, Russia
| | - Alexander O Golubok
- Institute for Analytical Instrumentation RAS, 26 Rizhskii pr., St. Petersburg 190103, Russia
| | - Alexander V Arkhipov
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, St. Petersburg 195251, Russia
| | - Ivan S Mukhin
- St. Petersburg Academic University, 8/3 Khlopina str., St. Petersburg 194021, Russia
- Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya, 29, St. Petersburg 195251, Russia
| |
Collapse
|
7
|
Cui L, Zhu Y, Nordlander P, Di Ventra M, Natelson D. Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations. NANO LETTERS 2021; 21:2658-2665. [PMID: 33710898 DOI: 10.1021/acs.nanolett.1c00503] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically and optically excited localized surface plasmons, we report a much greater (over 1000× ) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering. Our measurement results are in excellent agreement with a theoretical model combining electro-optical generation of hot carriers through nonradiative plasmon excitation and hot-carrier relaxation. We also discuss the challenge of distinguishing relative contributions of hot carrier emission and the anti-Stokes electronic Raman process. This observed increase in above-threshold emission in plasmonic systems may open avenues in on-chip nanophotonic switching and hot-carrier photocatalysis.
Collapse
Affiliation(s)
- Longji Cui
- Department of Physics and Astronomy and Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
- Paul M. Rady Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado 80309, United States
| | - Yunxuan Zhu
- Department of Physics and Astronomy and Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
| | - Peter Nordlander
- Department of Physics and Astronomy and Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Massimiliano Di Ventra
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
| | - Douglas Natelson
- Department of Physics and Astronomy and Smalley-Curl Institute, Rice University, Houston, Texas 77005, United States
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| |
Collapse
|