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Paoletta AL, Venkataraman L. Determining Transmission Characteristics from Shot-Noise-Driven Electroluminescence in Single-Molecule Junctions. NANO LETTERS 2024; 24:1931-1935. [PMID: 38315038 DOI: 10.1021/acs.nanolett.3c04207] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Biased metal-molecule-metal junctions emit light through electroluminescence, a phenomenon at the intersection of molecular electronics and nanoplasmonics. This can occur when the junction plasmon mode is excited by inelastic electron current fluctuations. Here, we simultaneously measure the conductance and electroluminescence intensity from single-molecule junctions with time resolution in a solution environment at room temperature. We use current versus bias data to determine the molecular junction transport parameters and then relate these to the expected current shot noise. We find that the electroluminescence signal accurately matches the theoretical prediction of shot-noise-driven emission in a large fraction of the molecular junctions studied. This introduces a novel experimental method for qualitatively estimating finite-frequency shot noise in single-molecule junctions under ambient conditions. We further demonstrate that electroluminescence can be used to obtain the level alignment of the frontier orbital dominating transport in the molecular junction.
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Affiliation(s)
- Angela L Paoletta
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Latha Venkataraman
- Department of Chemistry, Columbia University, New York, New York 10027, United States
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
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2
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Tang J, Guo Q, Wu Y, Ge J, Zhang S, Xu H. Light-Emitting Plasmonic Tunneling Junctions: Current Status and Perspectives. ACS NANO 2024; 18:2541-2551. [PMID: 38227821 DOI: 10.1021/acsnano.3c08628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.
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Affiliation(s)
- Jibo Tang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Quanbing Guo
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Yu Wu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Junhao Ge
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Shunping Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Hongxing Xu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
- School of Microelectronics, Wuhan University, Wuhan 430072, China
- Henan Academy of Sciences, Zhengzhou, Henan 450046 China
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3
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Tang Y, Harutyunyan H. Optical properties of plasmonic tunneling junctions. J Chem Phys 2023; 158:060901. [PMID: 36792491 DOI: 10.1063/5.0128822] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023] Open
Abstract
Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.
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Affiliation(s)
- Yuankai Tang
- Department of Physics, Emory University, Atlanta, Georgia 30322, USA
| | - Hayk Harutyunyan
- Department of Physics, Emory University, Atlanta, Georgia 30322, USA
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4
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Zhu Y, Cui L, Abbasi M, Natelson D. Tuning Light Emission Crossovers in Atomic-Scale Aluminum Plasmonic Tunnel Junctions. NANO LETTERS 2022; 22:8068-8075. [PMID: 36197739 DOI: 10.1021/acs.nanolett.2c02013] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Atomic-sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic tunnel junctions have been proposed, from single-electron or higher-order multielectron inelastic tunneling to recombination from a steady-state population of hot carriers. By progressively altering the tunneling conductance of an aluminum junction, we tune the dominant light emission mechanism through these possibilities for the first time, finding quantitative agreement with theory in each regime. Improved plasmonic resonances in the energy range of interest increase photon yields by 2 orders of magnitude. These results demonstrate that the dominant emission mechanism is set by a combination of tunneling rate, hot carrier relaxation time scales, and junction plasmonic properties.
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Affiliation(s)
- Yunxuan Zhu
- Department of Physics and Astronomy, Rice University, Houston, Texas77005, United States
| | - Longji Cui
- Paul M. Rady Department of Mechanical Engineering, University of Colorado, Boulder, Colorado80309, United States
- Materials Science and Engineering Program, University of Colorado, Boulder, Colorado80309, United States
| | - Mahdiyeh Abbasi
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas77005, United States
| | - Douglas Natelson
- Department of Physics and Astronomy, Rice University, Houston, Texas77005, United States
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas77005, United States
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas77005, United States
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5
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Plasmonic phenomena in molecular junctions: principles and applications. Nat Rev Chem 2022; 6:681-704. [PMID: 37117494 DOI: 10.1038/s41570-022-00423-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 08/15/2022] [Indexed: 11/08/2022]
Abstract
Molecular junctions are building blocks for constructing future nanoelectronic devices that enable the investigation of a broad range of electronic transport properties within nanoscale regions. Crossing both the nanoscopic and mesoscopic length scales, plasmonics lies at the intersection of the macroscopic photonics and nanoelectronics, owing to their capability of confining light to dimensions far below the diffraction limit. Research activities on plasmonic phenomena in molecular electronics started around 2010, and feedback between plasmons and molecular junctions has increased over the past years. These efforts can provide new insights into the near-field interaction and the corresponding tunability in properties, as well as resultant plasmon-based molecular devices. This Review presents the latest advancements of plasmonic resonances in molecular junctions and details the progress in plasmon excitation and plasmon coupling. We also highlight emerging experimental approaches to unravel the mechanisms behind the various types of light-matter interactions at molecular length scales, where quantum effects come into play. Finally, we discuss the potential of these plasmonic-electronic hybrid systems across various future applications, including sensing, photocatalysis, molecular trapping and active control of molecular switches.
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6
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Cheng B, Zellweger T, Malchow K, Zhang X, Lewerenz M, Passerini E, Aeschlimann J, Koch U, Luisier M, Emboras A, Bouhelier A, Leuthold J. Atomic scale memristive photon source. LIGHT, SCIENCE & APPLICATIONS 2022; 11:78. [PMID: 35351848 PMCID: PMC8964763 DOI: 10.1038/s41377-022-00766-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 02/20/2022] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms. They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing. Amongst these devices, Ag/amorphous-SiOx/Pt memristors are among the most studied systems, with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally. In this paper, we report the observation of a novel feature in these devices: The appearance of new photoluminescent centers in SiOx upon memristive switching, and photon emission correlated with the conductance changes. This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks, optical interconnects, and quantum communication.
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Affiliation(s)
- Bojun Cheng
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland.
| | - Till Zellweger
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Konstantin Malchow
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne Franche-Comté, Dijon, 21078, France
| | - Xinzhi Zhang
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Mila Lewerenz
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Elias Passerini
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Jan Aeschlimann
- ETH Zurich, Integrated Systems Laboratory, Zurich, 8092, Switzerland
| | - Ueli Koch
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Mathieu Luisier
- ETH Zurich, Integrated Systems Laboratory, Zurich, 8092, Switzerland
| | | | - Alexandre Bouhelier
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne Franche-Comté, Dijon, 21078, France
| | - Juerg Leuthold
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland.
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7
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Dubi Y, Un IW, Sivan Y. Distinguishing Thermal from Nonthermal ("Hot") Carriers in Illuminated Molecular Junctions. NANO LETTERS 2022; 22:2127-2133. [PMID: 35075905 DOI: 10.1021/acs.nanolett.1c04291] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The search for the signature of nonthermal (so-called "hot") electrons in illuminated plasmonic nanostructures requires detailed understanding of the nonequilibrium electron distribution under illumination, as well as a careful design of the experimental system employed to distinguish nonthermal electrons from thermal ones. Here, we provide a theory for using plasmonic molecular junctions to achieve this goal. We show how nonthermal electrons can be measured directly and separately from the unavoidable thermal response and discuss the relevance of our theory to recent experiments.
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Affiliation(s)
- Yonatan Dubi
- Department of Chemistry, Ben-Gurion University of the Negev, Be'er Sheva 8410501, Israel
| | - Ieng-Wai Un
- School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Be'er Sheva 8410501, Israel
| | - Yonatan Sivan
- School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Be'er Sheva 8410501, Israel
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8
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Rosławska A, Merino P, Grewal A, Leon CC, Kuhnke K, Kern K. Atomic-Scale Structural Fluctuations of a Plasmonic Cavity. NANO LETTERS 2021; 21:7221-7227. [PMID: 34428071 PMCID: PMC8887667 DOI: 10.1021/acs.nanolett.1c02207] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Optical spectromicroscopies, which can reach atomic resolution due to plasmonic enhancement, are perturbed by spontaneous intensity modifications. Here, we study such fluctuations in plasmonic electroluminescence at the single-atom limit profiting from the precision of a low-temperature scanning tunneling microscope. First, we investigate the influence of a controlled single-atom transfer from the tip to the sample on the plasmonic properties of the junction. Next, we form a well-defined atomic contact of several quanta of conductance. In contact, we observe changes of the electroluminescence intensity that can be assigned to spontaneous modifications of electronic conductance, plasmonic excitation, and optical antenna properties all originating from minute atomic rearrangements at or near the contact. Our observations are relevant for the understanding of processes leading to spontaneous intensity variations in plasmon-enhanced atomic-scale spectroscopies such as intensity blinking in picocavities.
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Affiliation(s)
- Anna Rosławska
- Max-Planck-Institut
für Festkörperforschung, D-70569 Stuttgart, Germany
- Université
de Strasbourg, CNRS, IPCMS, UMR 7504, F-67000 Strasbourg, France
| | - Pablo Merino
- Max-Planck-Institut
für Festkörperforschung, D-70569 Stuttgart, Germany
- Instituto
de Ciencia de Materiales de Madrid, CSIC, E-28049 Madrid, Spain
- Instituto
de Física Fundamental, CSIC, E-28006 Madrid, Spain
| | - Abhishek Grewal
- Max-Planck-Institut
für Festkörperforschung, D-70569 Stuttgart, Germany
| | | | - Klaus Kuhnke
- Max-Planck-Institut
für Festkörperforschung, D-70569 Stuttgart, Germany
| | - Klaus Kern
- Max-Planck-Institut
für Festkörperforschung, D-70569 Stuttgart, Germany
- Institut
de Physique, École Polytechnique
Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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