γ-GeSe: A New Hexagonal Polymorph from Group IV-VI Monochalcogenides

Strain-induced excellent photocatalytic performance in Z-scheme BlueP/γ-SnS heterostructures for water splitting

Constructing Z-scheme heterojunction photocatalysts with high solar-to-hydrogen (STH) efficiency is a practical alternative to produce clean and recyclable hydrogen energy on a large scale. This paper presents the design of stable Z-scheme blue phosphorene (BlueP)/γ-SnS heterostructures with excellent photocatalytic activities by applying strains. The first-principles calculations show that the BlueP/γ-SnS heterobilayer is a type-I heterojunction with an indirect bandgap of 1.41 eV and strong visible-light absorption up to 105 cm-1. Interestingly, biaxial strains (ε) can effectively regulate its bandgap width (semiconductor-metal) and induce the band alignment transition (type-I-type-II). Compressive and tensile strains can significantly enhance the interfacial interaction and visible-light absorption, respectively. More intriguingly, compressive strains can not only modulate the heterojunction types but also make the band edges meet the requirements for overall water splitting. In particular, the Z-scheme (type-I) BlueP/γ-SnS bilayer at -8% (-2%) strain exhibits a relatively high STH efficiency of 18% (17%), and the strained Z-scheme system (-8% ≤ ε ≤ -6%) also exhibits high and anisotropic carrier mobilities (158-2327 cm2 V-1 s-1). These strain-induced outstanding properties make BlueP/γ-SnS heterostructures promising candidates for constructing economically feasible photocatalysts and flexible nanodevices.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Enhancing CO2 electroreduction performance through transition metal atom doping and strain engineering in γ-GeSe: a first-principles study

The development of electrocatalysts that exhibit stability, high activity, and selectivity for CO2 reduction reactions (CO2RR) remains a significant challenge. Single-atom catalysts (SACs) hold promise in addressing this challenge due to their high atomic utilization efficiency. In this study, we explore the potential of monolayer γ-GeSe doped with transition metals, referred to as TM@γ-GeSe, for facilitating electrocatalytic CO2RR. Among the 26 TM@γ-GeSe SACs systematically designed, we have identified four stable transition metal catalysts (TM = Rh, Pd, Pt, and Au). Mechanistic investigations into the CO2RR pathways reveal exceptional electrocatalytic activity for Rh@γ-GeSe and Pd@γ-GeSe, with limiting potentials of -0.26 and -0.35 V, respectively. Particularly, Pd@γ-GeSe exhibits outstanding product selectivity toward formic acid. The introduction of strain engineering induces modifications in the catalytic activity and selectivity of Rh@γ-GeSe. Notably, a 1% tensile strain promotes formic acid as the preferred product, thereby improving the specific product selectivity of Rh@γ-GeSe. Conversely, compressive strain reduces CO2RR activity while enhancing the hydrogen evolution reaction, leading to a decrease in CO2RR selectivity. Furthermore, we use the work function as a descriptor to elucidate the underlying mechanism of strain tunability. We hope that our theoretical study will offer valuable insights for the design of catalysts based on γ-GeSe for electrocatalytic CO2RR.

Prediction of novel ground-state structures and analysis of phonon transport in two-dimensional GexSy compounds

We conducted this study to explore the ground-state structures of two-dimensional (2D) variable-composition GexSy compounds, driven by the polymorphic characteristics of bulk germanium sulfides and the promising thermoelectric performance of 2D GeS (Pmn21). To accomplish this, we utilized the highly successful evolutionary-algorithm-based code USPEX in conjunction with VASP for total energy calculations, leading to the discovery of three previously unexplored structures of Ge2S (P2/c), GeS (P3̄m1), and GeS2 (P21/c). These 2D materials exhibit significantly lower formation energies compared to their reported counterparts. We thoroughly scrutinized the structural stability and subsequently analyzed their electronic structures. Our analysis reveals a nearly direct band gap of 0.12/0.84 eV with the PBE/HSE06 functional for 2D Ge2S and an indirect band gap for 2D GeS and GeS2. Their semiconducting nature highlights the crucial importance of lattice thermal conductivity (κl), which we determined by solving the Boltzmann transport equation for phonons. Importantly, we predict a room temperature κl value of 6.82 W m-1 K-1 for GeS, lower than its 2D orthorhombic counterpart. In the case of GeS2, we observed an anisotropic κl value of 16.95/10.68 W m-1 K-1 along the zigzag/armchair directions at 300 K, with an in-plane anisotropy ratio of 1.59, surpassing that of 2D IV-VI compounds. We delve into detailed discussions regarding the role of lattice anharmonicity, group velocities, phonon lifetimes, and three-phonon weighted phase space in the overall thermal conductivity analysis.

Novel two-dimensional Janus β-Ge2XY (X/Y = S, Se, Te) structures: first-principles examinations

Two-dimensional (2D) structures can stably exist in different allotropes. In this manuscript, we propose a new series of Janus structures based on the β-phase of germanium monochalcogenides, namely, β-Ge2XY (X/Y = S, Se, and Te) monolayers. Our calculations indicate that Janus β-Ge2XY monolayers have a stable crystal structure and possess anisotropic mechanical properties. At the ground state, β-Ge2XY monolayers are semiconductors with a large bandgap and their electronic properties depend strongly on a biaxial strain. Strains not only change the bandgap but can also lead to a change in the bandgap characteristic, namely transitions from indirect to direct bandgap. Our findings not only introduce a new structure of germanium chalcogenide compounds but also show that they have superior physical properties suitable for applications in nanoelectronics.

Electrical Transport Properties Driven by Unique Bonding Configuration in γ-GeSe

Group IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of γ-GeSe, a recently identified polymorph of GeSe. γ-GeSe exhibits high electrical conductivity (∼10⁶ S/m) and a relatively low Seebeck coefficient (9.4 μV/K at room temperature) owing to its high p-doping level (5 × 10²¹ cm^-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that γ-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

Two-dimensional (2D) materials tend to have the preferable formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (V_Ge) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various types of defects considered. We also find a low diffusion barrier (1.04 eV) of V_Ge, which is half of those of sulfur vacancies in MoS₂. The facile formation of mobile V_Ge is rooted in the antibonding coupling of the lone-pair Ge 4s and Se 4p states near the valence band maximum, which also exists in other gamma-phase MX (M = Sn, Ge; X = S, Te). The V_Ge is accompanied by a shallow acceptor level in the band gap and induces strong infrared light absorption and p-type conductivity. The V_Ge located in the middle cationic Ge sublattice is well protected by the surface Se layers - a feature that is absent in other atomically thin materials. Our work suggests that the unique well-buried inner V_Ge, with the potential of forming structurally protected ultrathin conducting filaments, may render the GeSe layer an ideal platform for quantum emitting, memristive, and neuromorphic applications.

New C 2h phase of group III monochalcogenide monolayers AlX (X = S, Se, and Te) with anisotropic crystal structure: first-principles study

In this paper, we introduce a new phase of two-dimensional aluminum monochalcogenide, namely C _2h-AlX (X = S, Se, and Te). With the C _2h space group, C _2h-AlX possesses a large unit cell containing 8 atoms. The C _2h phase of AlX monolayers is found to be dynamically and elastically stable based on the evaluation of its phonon dispersions and elastic constants. The anisotropic atomic structure of C _2h-AlX leads to a strong anisotropy in its mechanical properties with Young's modulus and Poisson's ratio strongly dependent on the directions examined in the two-dimensional plane. All three monolayers of C _2h-AlX are found to be direct band gap semiconductors, which are compared with the indirect band gap semiconductors of available D _3h-AlX. Particularly, the transition from direct to indirect band gap is observed in C _2h-AlX when a compressive biaxial strain is applied. Our calculated results indicate that C _2h-AlX exhibits anisotropic optical characteristics and its absorption coefficient is high. Our findings suggest that C _2h-AlX monolayers are suitable for applications in next-generation electro-mechanical and anisotropic opto-electronic nanodevices.

Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation

The shape of energy dispersions near the band-edges plays a decisive role in the transport properties, especially the carrier mobility, of semiconductors. In this work, we design and investigate the γ phase of tin monoxide and monochalcogenides γ-SnX (X = O, S, Se, and Te) through first-principles simulations. γ-SnX is found to be dynamically stable with phonon dispersions containing only positive phonon frequencies. Due to the hexagonal atomic lattice, the mechanical properties of γ-SnX single-layers are directionally isotropic and their elastic constants meet Born's criterion for mechanical stability. Our calculation results indicate that all four single-layers of γ-SnX are semiconductors with the Mexican-hat dispersions. The biaxial strain not only greatly changes the electronic structures of the γ-SnX single-layers, but also can cause a phase transition from semiconductor to metal. Meanwhile, the effects of an electric field on the electron states of γ-SnX single-layers are insignificant. γ-SnX structures have high electron mobility and their electron mobility is highly directional isotropic along the two transport directions x and y. The findings not only initially introduce the γ phase of group IV-VI compounds, but also serve as a premise for further studies on this material family with potential applications in the future, both theoretically and experimentally.

Vertical Conductivity and Topography in Electrostrictive Germanium Sulfide Microribbon via Conductive Atomic Force Microscopy

Layered group IV monochalcogenides are two-dimensional (2D) semiconducting materials with unique crystal structures and novel physical properties. Here, we report the growth of single crystalline GeS microribbons using the chemical vapor transport process. By using conductive atomic force microscopy, we demonstrated that the conductive behavior in the vertical direction was mainly affected by the Schottky barriers between GeS and both electrodes. Furthermore, we found that the topographic and current heterogeneities were significantly different with and without illumination. The topographic deformation and current enhancement were also predicted by our density functional theory (DFT)-based calculations. Their local spatial correlation between the topographic height and current was established. By virtue of 2D fast Fourier transform power spectra, we constructed the holistic spatial correlation between the topographic and current heterogeneity that indicated the diminished correlation with illumination. These findings on layered GeS microribbons provide insights into the conductive and topographic behaviors in 2D materials.

A first principles study of a van der Waals heterostructure based on MS2 (M = Mo, W) and Janus CrSSe monolayers

The strategy of stacking two-dimensional materials for designing van der Waals heterostructures has gained tremendous attention in realizing innovative device applications in optoelectronics and renewable energy sources. Here, we performed the first principles calculations of the geometry, optoelectronic and photocatalytic performance of MS₂-CrSSe (M = Mo, W) vdW heterostructures. The mirror asymmetry in the Janus CrSSe system allows the designing of two models of the MS₂-CrSSe system by replacing S/Se atoms at opposite surfaces in CrSSe. The feasible configurations of both models of the MS₂-CrSSe system are found energetically, dynamically and thermally stable. The studied heterobilayers possess an indirect type-I band alignment, indicating that the recombination of photogenerated electrons and holes in the CrSSe monolayer is hence crucial for photodetectors and laser applications. Remarkably, a red-shift in the optical absorption spectra of MS₂-CrSSe makes them potential candidates for light harvesting applications. More interestingly, all heterobilayers (except W(Mo)S₂-CrSSe of model-I(II)) reveal appropriate band edge positions of the oxidation and reduction potentials of the photocatalysis of water dissociation into H⁺/H₂ and O₂/H₂O at pH = 0. These results shed light on the practical design of the MS₂-CrSSe system for efficient optoelectronic and photocatalytic water splitting applications.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures

Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.

Free-standing large, ultrathin germanium selenide van der Waals ribbons by combined vapor-liquid-solid growth and edge attachment

Among group IV monochalcogenides, layered GeSe is of interest for its anisotropic properties, 1.3 eV direct band gap, ferroelectricity, high mobility, and excellent environmental stability. Electronic, optoelectronic and photovoltaic applications depend on the development of synthesis approaches that yield large quantities of crystalline flakes with controllable size and thickness. Here, we demonstrate the growth of single-crystalline GeSe nanoribbons by a vapor-liquid-solid process over Au catalyst on different substrates at low thermal budget. The nanoribbons crystallize in a layered structure, with ribbon axis along the armchair direction of the van der Waals layers. The ribbon morphology is determined by catalyst driven fast longitudinal growth accompanied by lateral expansion via edge-specific incorporation into the basal planes. This combined growth mechanism enables temperature controlled realization of ribbons with typical widths of up to 30 μm and lengths exceeding 100 μm, while maintaining sub-50 nm thickness. Nanoscale cathodoluminescence spectroscopy on individual GeSe nanoribbons demonstrates intense temperature-dependent band-edge emission up to room temperature, with fundamental bandgap and temperature coefficient of E_g(0) = 1.29 eV and α = 3.0 × 10^-4 eV K^-1, respectively, confirming high quality GeSe with low concentration of non-radiative recombination centers promising for optoelectronic applications including light emitters, photodetectors, and solar cells.