Spatial Control of Charge Doping in n-Type Topological Insulators

Breakdown of bulk-projected isotropy in surface electronic states of topological Kondo insulator SmB6(001)

The topology and spin-orbital polarization of two-dimensional (2D) surface electronic states have been extensively studied in this decade. One major interest in them is their close relationship with the parities of the bulk (3D) electronic states. In this context, the surface is often regarded as a simple truncation of the bulk crystal. Here we show breakdown of the bulk-related in-plane rotation symmetry in the topological surface states (TSSs) of the Kondo insulator SmB₆. Angle-resolved photoelectron spectroscopy (ARPES) performed on the vicinal SmB₆(001)-p(2 × 2) surface showed that TSSs are anisotropic and that the Fermi contour lacks the fourfold rotation symmetry maintained in the bulk. This result emphasizes the important role of the surface atomic structure even in TSSs. Moreover, it suggests that the engineering of surface atomic structure could provide a new pathway to tailor various properties among TSSs, such as anisotropic surface conductivity, nesting of surface Fermi contours, or the number and position of van Hove singularities in 2D reciprocal space.

Previous work exploring the robustness of topological surface states to perturbations has mostly focused on surfaces with the same atomic structure as the bulk. Here the authors demonstrate the effect of surface reconstruction on the topological surfaces on the (100) surface of SmB6.