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Huang S, Xu S, Ma C, Li P, Guo E, Ge C, Wang C, Xu X, He M, Yang G, Jin K. Ferroelectric Order Evolution in Freestanding PbTiO 3 Films Monitored by Optical Second Harmonic Generation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307571. [PMID: 38923859 PMCID: PMC11348163 DOI: 10.1002/advs.202307571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 05/30/2024] [Indexed: 06/28/2024]
Abstract
The demand for low-dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO3 (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out-of-plane and in-plane domains with polarization along out-of-plane and in-plane directions in the orthorhombic-like freestanding PTO films, respectively. In contrast, only out-of-plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well-maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide-temperature-range SHG. These findings provide valuable understanding for the development of the next-generation electronic nanodevices with flexibility and thermostability.
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Affiliation(s)
- Sisi Huang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Shuai Xu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Pengzhan Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
| | - Er‐Jia Guo
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
| | - Meng He
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
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3
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Guo J, He B, Han Y, Liu H, Han J, Ma X, Wang J, Gao W, Lü W. Resurrected and Tunable Conductivity and Ferromagnetism in the Secondary Growth La 0.7Ca 0.3MnO 3 on Transferred SrTiO 3 Membranes. NANO LETTERS 2024; 24:1114-1121. [PMID: 38252877 DOI: 10.1021/acs.nanolett.3c03651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic, metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to maximize the functionality of a promising electronic device. The ceramic nature of complex oxides and the demand for accurate and long-range-ordered stoichiometry face severe challenges. Here, the transport and magnetic properties of the La0.7Ca0.3MnO3 (LCMO) secondary growth on single-crystal freestanding SrTiO3 (STO) membranes are demonstrated. It has been experimentally found that on an only 10 nm thick STO membrane, the LCMO can offer a bulk-like Curie temperature (TC) of 253 K and negative magnetoresistance of -64%, with a weak dependence on the thickness. The resurrected conductivity and ferromagnetism in LCMO confirm the advantages of secondary growth, which benefits from the excellent flexibility and transferability. Additionally, this study explores the integration strategy of complex oxides with other functional materials.
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Affiliation(s)
- Jinrui Guo
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Yue Han
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Huan Liu
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Jiale Han
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Xiaoqiao Ma
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Jiaqing Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Wenqi Gao
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
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4
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Zhang J, Lin T, Wang A, Wang X, He Q, Ye H, Lu J, Wang Q, Liang Z, Jin F, Chen S, Fan M, Guo EJ, Zhang Q, Gu L, Luo Z, Si L, Wu W, Wang L. Super-tetragonal Sr 4Al 2O 7 as a sacrificial layer for high-integrity freestanding oxide membranes. Science 2024; 383:388-394. [PMID: 38271502 DOI: 10.1126/science.adi6620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 12/13/2023] [Indexed: 01/27/2024]
Abstract
Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" Sr4Al2O7 (SAOT). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.
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Affiliation(s)
- Jinfeng Zhang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ao Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Xiaochao Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Qingyu He
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Huan Ye
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jingdi Lu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Qing Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Zhengguo Liang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Jin
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minghui Fan
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an 710127, China
- Institut für Festkörperphysik, TU Wien, 1040 Vienna, Austria
| | - Wenbin Wu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
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5
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Huang Z, Chen B, Ren B, Tu D, Wang Z, Wang C, Zheng Y, Li X, Wang D, Ren Z, Qu S, Chen Z, Xu C, Fu Y, Peng D. Smart Mechanoluminescent Phosphors: A Review of Strontium-Aluminate-Based Materials, Properties, and Their Advanced Application Technologies. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2204925. [PMID: 36372543 PMCID: PMC9875687 DOI: 10.1002/advs.202204925] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2022] [Revised: 09/30/2022] [Indexed: 05/19/2023]
Abstract
Mechanoluminescence, a smart luminescence phenomenon in which light energy is directly produced by a mechanical force, has recently received significant attention because of its important applications in fields such as visible strain sensing and structural health monitoring. Up to present, hundreds of inorganic and organic mechanoluminescent smart materials have been discovered and studied. Among them, strontium-aluminate-based materials are an important class of inorganic mechanoluminescent materials for fundamental research and practical applications attributed to their extremely low force/pressure threshold of mechanoluminescence, efficient photoluminescence, persistent afterglow, and a relatively low synthesis cost. This paper presents a systematic and comprehensive review of strontium-aluminate-based luminescent materials' mechanoluminescence phenomena, mechanisms, material synthesis techniques, and related applications. Besides of summarizing the early and the latest research on this material system, an outlook is provided on its environmental, energy issue and future applications in smart wearable devices, advanced energy-saving lighting and displays.
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Affiliation(s)
- Zefeng Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Bing Chen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Biyun Ren
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Dong Tu
- Key Laboratory of Artificial Micro/Nano Structure of Ministry of EducationSchool of Physics and TechnologyWuhan UniversityWuhan430072China
| | - Zhaofeng Wang
- State Key Laboratory of Solid LubricationLanzhou Institute of Chemical PhysicsChinese Academy of SciencesLanzhou730000P. R. China
| | - Chunfeng Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Yuantian Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Xu Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Dong Wang
- College of Physical EducationShenzhen UniversityShenzhen518060China
| | - Zhanbing Ren
- College of Physical EducationShenzhen UniversityShenzhen518060China
| | - Sicen Qu
- College of Physical EducationShenzhen UniversityShenzhen518060China
| | - Zhuyang Chen
- Academy for Advanced Interdisciplinary StudiesSouthern University of Science and TechnologyShenzhen518055China
| | - Chen Xu
- Academy for Advanced Interdisciplinary StudiesSouthern University of Science and TechnologyShenzhen518055China
| | - Yu Fu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Dengfeng Peng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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6
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Gong L, Wei M, Yu R, Ohta H, Katayama T. Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer. ACS NANO 2022; 16:21013-21019. [PMID: 36411060 DOI: 10.1021/acsnano.2c08649] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Flexible and functional perovskite oxide sheets with high orientation and crystallization are the next step in the development of next-generation devices. One promising synthesis method is the lift-off and transfer method using a water-soluble sacrificial layer. However, the suppression of cracks during lift-off is a crucial problem that remains unsolved. In this study, we demonstrated that this problem can be solved by depositing amorphous Al2O3 capping layers on oxide sheets. Using this simple method, over 20 mm2 of crack-free, deep-ultraviolet transparent electrode La:SrSnO3 and ferroelectric Ba0.75Sr0.25TiO3 flexible sheets were obtained. By contrast, the sheets without any capping layers broke. The obtained sheets showed considerable flexibility and high functionality. The La:SrSnO3 sheet simultaneously exhibited a wide bandgap (4.4 eV) and high electrical conductivity (>103 S/cm). The Ba0.75Sr0.25TiO3 sheet exhibited clear room-temperature ferroelectricity with a remnant polarization of 17 μC/cm2. Our findings provide a simple transfer method for obtaining large, crack-free, high-quality, single-crystalline sheets.
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Affiliation(s)
- Lizhikun Gong
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Mian Wei
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Rui Yu
- Graduate School of Information Science and Technology, Hokkaido University, N14W9, Kita, Sapporo 060-0814, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
| | - Tsukasa Katayama
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan
- JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
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7
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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8
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Lu Q, Liu Z, Yang Q, Cao H, Balakrishnan P, Wang Q, Cheng L, Lu Y, Zuo JM, Zhou H, Quarterman P, Muramoto S, Grutter AJ, Chen H, Zhai X. Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films. ACS NANO 2022; 16:7580-7588. [PMID: 35446560 DOI: 10.1021/acsnano.1c11065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO3 decreases the Mn valence and switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.
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Affiliation(s)
- Qinwen Lu
- Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhiwei Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai 200122, China
| | - Qun Yang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Hui Cao
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Purnima Balakrishnan
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Qing Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Long Cheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yalin Lu
- Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Jian-Min Zuo
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Hua Zhou
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Patrick Quarterman
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Shin Muramoto
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Alexander J Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Hanghui Chen
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai 200122, China
- Department of Physics, New York University, New York, New York 10012, United States
| | - Xiaofang Zhai
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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9
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Liu K, Jin H, Huang L, Luo Y, Zhu Z, Dai S, Zhuang X, Wang Z, Huang L, Zhou J. Puffing ultrathin oxides with nonlayered structures. SCIENCE ADVANCES 2022; 8:eabn2030. [PMID: 35594353 PMCID: PMC9122325 DOI: 10.1126/sciadv.abn2030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 04/06/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) oxides have unique electrical, optical, magnetic, and catalytic properties, which are promising for a wide range of applications in different fields. However, it is difficult to fabricate most oxides as 2D materials unless they have a layered structure. Here, we present a facile strategy for the synthesis of ultrathin oxide nanosheets using a self-formed sacrificial template of carbon layers by taking advantage of the Maillard reaction and violent redox reaction between glucose and ammonium nitrate. To date, 36 large-area ultrathin oxides (with thickness ranging from ~1.5 to ~4 nm) have been fabricated using this method, including rare-earth oxides, transition metal oxides, III-main group oxides, II-main group oxides, complex perovskite oxides, and high-entropy oxides. In particular, the as-obtained perovskite oxides exhibit great electrocatalytic activity for oxygen evolution reaction in an alkaline solution. This facile, universal, and scalable strategy provides opportunities to study the properties and applications of atomically thin oxide nanomaterials.
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Hafez MA, Zayed MK, Elsayed-Ali HE. Review: Geometric Interpretation of Reflection and Transmission RHEED Patterns. Micron 2022; 159:103286. [DOI: 10.1016/j.micron.2022.103286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 04/11/2022] [Accepted: 04/12/2022] [Indexed: 10/18/2022]
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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Salles P, Guzmán R, Zanders D, Quintana A, Fina I, Sánchez F, Zhou W, Devi A, Coll M. Bendable Polycrystalline and Magnetic CoFe 2O 4 Membranes by Chemical Methods. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12845-12854. [PMID: 35232015 PMCID: PMC8931725 DOI: 10.1021/acsami.1c24450] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2021] [Accepted: 02/21/2022] [Indexed: 06/14/2023]
Abstract
The preparation and manipulation of crystalline yet bendable functional complex oxide membranes has been a long-standing issue for a myriad of applications, in particular, for flexible electronics. Here, we investigate the viability to prepare magnetic and crystalline CoFe2O4 (CFO) membranes by means of the Sr3Al2O6 (SAO) sacrificial layer approach using chemical deposition techniques. Meticulous chemical and structural study of the SAO surface and SAO/CFO interface properties have allowed us to identify the formation of an amorphous SAO capping layer and carbonates upon air exposure, which dictate the crystalline quality of the subsequent CFO film growth. Vacuum annealing at 800 °C of SAO films promotes the elimination of the surface carbonates and the reconstruction of the SAO surface crystallinity. Ex-situ atomic layer deposition of CFO films at 250 °C on air-exposed SAO offers the opportunity to avoid high-temperature growth while achieving polycrystalline CFO films that can be successfully transferred to a polymer support preserving the magnetic properties under bending. Float on and transfer provides an alternative route to prepare freestanding and wrinkle-free CFO membrane films. The advances and challenges presented in this work are expected to help increase the capabilities to grow different oxide compositions and heterostructures of freestanding films and their range of functional properties.
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Affiliation(s)
- Pol Salles
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Roger Guzmán
- School
of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - David Zanders
- Inorganic
Materials Chemistry, Ruhr University Bochum, Universitätsstrasse 150, Bochum 44801, Germany
| | | | - Ignasi Fina
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | | | - Wu Zhou
- School
of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Anjana Devi
- Inorganic
Materials Chemistry, Ruhr University Bochum, Universitätsstrasse 150, Bochum 44801, Germany
| | - Mariona Coll
- ICMAB-CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
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