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Zhang M, Gao Y, Zhao Q, Wei J, Zheng L, Ouyang J, Na N. Oxygen Bridge Formed by Doping Nonmetal Atoms into Cationic Vacancies To Enhance the Photoelectrochemical Oxygen Evolution Reaction. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37474337 DOI: 10.1021/acsami.3c06004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/22/2023]
Abstract
To enhance photoelectrochemical (PEC) water splitting for renewable energy conversion, the conventional strategy is doping nonmetals into anionic vacancies. Compared to anionic vacancies, cationic vacancies are theoretically more effective and reliable for anchoring nonmetals owing to their larger radii and unique advantages. The current research mainly focuses on anionic vacancies, while there are few studies on cationic vacancies due to high formation energy and challenging characterizations by convenient techniques. To overcome the current limitations, nonmetallic S and P atoms are successfully doped into cationic vacancies on the TiO2 surface for tuning local electronic structures. In contrast to the traditional strategy of reducing the bandgaps, nonmetallic atom doping into cationic vacancies facilitates efficient electronic regulation for PEC enhancement without changing the bandgap. The enhanced performance is attributed to the formation of an oxygen bridge, which can accumulate electrons from surrounding S/P atoms. Significantly, the electron-enriched oxygen bridge efficiently transfers electrons to activate reaction site Ti, which can promote the oxygen evolution reaction performance. Density functional theory calculations reveal that the decrease of reaction energy barriers and the optimization of local electron distribution are conducive to electronic transmission. This would provide a high-efficiency electronic tuning strategy for improving PEC performance.
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Affiliation(s)
- Min Zhang
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Yixuan Gao
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Qi Zhao
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Juanjuan Wei
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Lirong Zheng
- Beijing Synchrotron Radiation Facility Institute of High Energy Physics Chinese Academy of Sciences, Beijing 100049, China
| | - Jin Ouyang
- Department of Chemistry, College of Arts and Sciences, Beijing Normal University at Zhuhai, Zhuhai 519087, China
| | - Na Na
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
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He Y, Sheng J, Ren Q, Sun Y, Hao W, Dong F. Operando Identification of Dynamic Photoexcited Oxygen Vacancies as True Catalytic Active Sites. ACS Catal 2022. [DOI: 10.1021/acscatal.2c04238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
- Ye He
- School of Resources and Environment & Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jianping Sheng
- School of Resources and Environment & Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qin Ren
- School of Resources and Environment & Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yanjuan Sun
- School of Resources and Environment & Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Weichang Hao
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Beijing 100191, China
| | - Fan Dong
- School of Resources and Environment & Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China
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Barman A, Das D, Deshmukh S, Sarkar PK, Banerjee D, Hübner R, Gupta M, Saini CP, Kumar S, Johari P, Dhar S, Kanjilal A. Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34822-34834. [PMID: 35866235 DOI: 10.1021/acsami.2c05089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum Vo configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti1-xTaxO2-δ/Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼104 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼104 s) and endurance (∼105 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of Vo configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated Vo interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.
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Affiliation(s)
- Arabinda Barman
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
- Department of Physics, Dinhata College, Dinhata, West Bengal 736 135, India
| | - Dip Das
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Sujit Deshmukh
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Pranab Kumar Sarkar
- Department of Applied Sciences and Humanities, Assam University, Silchar, Assam 788 011, India
| | - Debosmita Banerjee
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dersden 01328, Germany
| | - Mukul Gupta
- UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452 001, India
| | | | - Shammi Kumar
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Priya Johari
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Sankar Dhar
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
| | - Aloke Kanjilal
- Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Dadri, Gautam Buddha Nagar, Greater Noida, Uttar Pradesh 201 314, India
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Meng M, Feng Y, Li C, Gan Z, Yuan H, Zhang H. Black 3D-TiO 2 Nanotube Arrays on Ti Meshes for Boosted Photoelectrochemical Water Splitting. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1447. [PMID: 35564156 PMCID: PMC9104132 DOI: 10.3390/nano12091447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/14/2022] [Accepted: 04/21/2022] [Indexed: 11/16/2022]
Abstract
Black 3D-TiO2 nanotube arrays are successfully fabricated on the Ti meshes through a facile electrochemical reduction method. The optimized black 3D-TiO2 nanotubes arrays yield a maximal photocurrent density of 1.6 mA/cm2 at 0.22 V vs. Ag/AgCl with Faradic efficiency of 100%, which is about four times larger than that of the pristine 3D-TiO2 NTAs (0.4 mA/cm2). Such boosted PEC water splitting activity primarily originates from the introduction of the oxygen vacancies, which results in the bandgap shrinkage of the 3D-TiO2 NTAs, boosting the utilization efficiency of visible light including the incident, reflected and/or refracted visible light captured by the 3D configuration. Moreover, the oxygen vacancies (Ti3+) can work as electron donors, which leads to the enhanced electronic conductivity and upward shift of the Fermi energy level, and thereby facilitating the transfer and separation of the photogenerated charge carrier at the semiconductor-electrolyte interface. This work offers a new opportunity to promote the PEC water splitting activity of TiO2-based photoelectrodes.
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Affiliation(s)
- Ming Meng
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China; (Y.F.); (C.L.); (H.Y.); (H.Z.)
| | - Yamin Feng
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China; (Y.F.); (C.L.); (H.Y.); (H.Z.)
| | - Chunyang Li
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China; (Y.F.); (C.L.); (H.Y.); (H.Z.)
| | - Zhixing Gan
- Key Laboratory of Optoelectronic Technology of Jiangsu Province, School of Physical Science and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Honglei Yuan
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China; (Y.F.); (C.L.); (H.Y.); (H.Z.)
| | - Honghui Zhang
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China; (Y.F.); (C.L.); (H.Y.); (H.Z.)
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