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Wang F, Xie L, Sun N, Zhi T, Zhang M, Liu Y, Luo Z, Yi L, Zhao Q, Wang L. Deformable Catalytic Material Derived from Mechanical Flexibility for Hydrogen Evolution Reaction. NANO-MICRO LETTERS 2023; 16:32. [PMID: 37999792 PMCID: PMC10673806 DOI: 10.1007/s40820-023-01251-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/21/2023] [Indexed: 11/25/2023]
Abstract
Deformable catalytic material with excellent flexible structure is a new type of catalyst that has been applied in various chemical reactions, especially electrocatalytic hydrogen evolution reaction (HER). In recent years, deformable catalysts for HER have made great progress and would become a research hotspot. The catalytic activities of deformable catalysts could be adjustable by the strain engineering and surface reconfiguration. The surface curvature of flexible catalytic materials is closely related to the electrocatalytic HER properties. Here, firstly, we systematically summarized self-adaptive catalytic performance of deformable catalysts and various micro-nanostructures evolution in catalytic HER process. Secondly, a series of strategies to design highly active catalysts based on the mechanical flexibility of low-dimensional nanomaterials were summarized. Last but not least, we presented the challenges and prospects of the study of flexible and deformable micro-nanostructures of electrocatalysts, which would further deepen the understanding of catalytic mechanisms of deformable HER catalyst.
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Affiliation(s)
- Fengshun Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lingbin Xie
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ning Sun
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Mengyang Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Yang Liu
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China
| | - Lanhua Yi
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, School of Chemistry, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Qiang Zhao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM) & Institute of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications, 9 Wenyuan, Nanjing, 210023, People's Republic of China.
| | - Longlu Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts & Telecommunications (NJUPT), 9 Wenyuan, Nanjing, 210023, People's Republic of China.
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Bottom up approach of metal assisted electrochemical exfoliation of boron towards borophene. Sci Rep 2022; 12:15683. [PMID: 36127387 PMCID: PMC9489866 DOI: 10.1038/s41598-022-20130-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 09/08/2022] [Indexed: 11/14/2022] Open
Abstract
Electrochemical exfoliation of nonconductive boron to few-layered borophene is reported. This unique effect is achieved via the incorporation of bulk boron into metal mesh inducing electrical conductivity and opening a venue for borophene fabrication via this feasible strategy. The experiments were conducted in various electrolytes providing a powerful tool to fabricate borophene flakes with a thickness of ~ 3–6 nm with different phases. The mechanism of electrochemical exfoliation of boron is also revealed and discussed. Therefore, the proposed methodology can serve as a new tool for bulk scale fabrication of few-layered borophene and speed up the development of borophene-related research and its potential application.
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Kong W, Zhang Y, Jiang X, Su Y, Liu H, Gao J. The quantum confinement effects on the electronic properties of monolayer GeS nanoribbon with tube-edged reconstruction. NANOTECHNOLOGY 2022; 33:345202. [PMID: 35584618 DOI: 10.1088/1361-6528/ac70e7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Monolayer α-phase GeS is promising for many novel applications due to its high carrier mobility and suitable bandgap. Recently, the metal and nonmetal zigzag edges of monolayer α-phase GeS have been predicted to undergo universal ZZ(Ge-Tube)/ZZ(S-R) edge reconstruction. Therefore, studies on GeSNR should be reconsidered. In this paper, we study the quantum confinement effects on the electronic properties of edge reconstructed monolayer GeS nanoribbon by using first-principles calculations. As width of the nanoribbon increases from 10 Å to 41 Å, the band gap keeps indirect and linearly decreases from 1.57 eV to 0.87 eV. Robust spatial separation of valence band maximum and conduction band minimum exist in reconstructed GeS nanoribbon with width larger than 19 Å. Moreover, high carrier mobility is expected in the reconstructed GeS nanoribbon. Our results suggest that reconstructed GeS nanoribbon is an important candidate for optoelectronics and photocatalytic.
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Affiliation(s)
- Weizheng Kong
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
| | - Yanxue Zhang
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
| | - Xue Jiang
- Dalian University of Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,Ministry of Education, No.2 linggong road, Ganjingzi District, Dalian, Liaoning, 116024, CHINA
| | - Yan Su
- school of Physics, Dalian University of Technology, No.2 linggong road Ganjingzi District, Dalian, 116024, CHINA
| | - Hongsheng Liu
- Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics, Dalian University of Technology, 2 Linggong road, Ganjingzi District, Dalian, Liaoning, 116024, CHINA
| | - Junfeng Gao
- Dalian University of Technology, No.2 Linggong Road, Ganjingzi District,, Dalian, Liaoning, 116024, CHINA
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