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Sestoft JE, Marnauza M, Olsteins D, Kanne T, Schlosser RD, Chen IJ, Grove-Rasmussen K, Nygård J. Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires. NANO LETTERS 2024. [PMID: 38865258 DOI: 10.1021/acs.nanolett.4c02055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.
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Affiliation(s)
- Joachim E Sestoft
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rasmus D Schlosser
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - I-Ju Chen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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2
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Dondapati JS, Govindhan M, Chen A. Direct growth of three-dimensional nanoflower-like structures from flat metal surfaces. Chem Commun (Camb) 2022; 58:11127-11130. [PMID: 36106462 DOI: 10.1039/d2cc04358k] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Here we report on a facile top-down approach for the direct growth of Co3O4 hierarchical nanoflowers from a bulk Co surface via chemical etching and thermal annealing. The effect of the annealing temperature was investigated, showing that amorphous Co3O4 was formed at 250 °C, while crystalline Co3O4 with notable oxygen vacancies was created at 550 °C. The formed 3D nanostructures exhibited excellent oxygen evolution reaction (OER) activities with a low overpotential of 0.34 V at 10 mA cm-2 and high durability. The proposed novel approach was further demonstrated by the direct growth of 3D NiO and CuO nanostructures on Ni and Cu substrates.
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Affiliation(s)
- Jesse S Dondapati
- Electrochemical Technology Centre, Department of Chemistry, University of Guelph, Guelph, ON-N1G 2W1, Canada.
| | - Maduraiveeran Govindhan
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, 603 203, Tamil Nadu, India
| | - Aicheng Chen
- Electrochemical Technology Centre, Department of Chemistry, University of Guelph, Guelph, ON-N1G 2W1, Canada.
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3
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Mazur GP, van Loo N, Wang JY, Dvir T, Wang G, Khindanov A, Korneychuk S, Borsoi F, Dekker RC, Badawy G, Vinke P, Gazibegovic S, Bakkers EPAM, Pérez MQ, Heedt S, Kouwenhoven LP. Spin-Mixing Enhanced Proximity Effect in Aluminum-Based Superconductor-Semiconductor Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202034. [PMID: 35680622 DOI: 10.1002/adma.202202034] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 04/25/2022] [Indexed: 06/15/2023]
Abstract
In superconducting quantum circuits, aluminum is one of the most widely used materials. It is currently also the superconductor of choice for the development of topological qubits. However, aluminum-based devices suffer from poor magnetic field compatibility. Herein, this limitation is resolved by showing that adatoms of heavy elements (e.g., platinum) increase the critical field of thin aluminum films by more than a factor of two. Using tunnel junctions, it is shown that the increased field resilience originates from spin-orbit scattering introduced by Pt. This property is exploited in the context of the superconducting proximity effect in semiconductor-superconductor hybrids, where it is shown that InSb nanowires strongly coupled to Al/Pt films can maintain superconductivity up to 7 T. The two-electron charging effect is shown to be robust against the presence of heavy adatoms. Additionally, non-local spectroscopy is used in a three-terminal geometry to probe the bulk of hybrid devices, showing that it remains free of sub-gap states. Finally, it is demonstrated that proximitized semiconductor states maintain their ability to Zeeman-split in an applied magnetic field. Combined with the chemical stability and well-known fabrication routes of aluminum, Al/Pt emerges as the natural successor to Al-based systems and is a compelling alternative to other superconductors, whenever high-field resilience is required.
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Affiliation(s)
- Grzegorz P Mazur
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Nick van Loo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Ji-Yin Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Tom Dvir
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Guanzhong Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Aleksei Khindanov
- Department of Physics, University of California, Santa Barbara, CA, 93106, USA
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Francesco Borsoi
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Robin C Dekker
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Peter Vinke
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Sasa Gazibegovic
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, 5600 MB, The Netherlands
| | - Marina Quintero- Pérez
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
- Netherlands Organisation for Applied Scientific Research (TNO), Delft, 2600 AD, The Netherlands
| | - Sebastian Heedt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, 2600 GA, The Netherlands
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Vekris A, Estrada Saldaña JC, Kanne T, Hvid-Olsen T, Marnauza M, Olsteins D, Wauters MM, Burrello M, Nygård J, Grove-Rasmussen K. Electronic Transport in Double-Nanowire Superconducting Islands with Multiple Terminals. NANO LETTERS 2022; 22:5765-5772. [PMID: 35833741 DOI: 10.1021/acs.nanolett.2c01161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We characterize in situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends suggest the presence of a subgap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals, and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.
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Affiliation(s)
- Alexandros Vekris
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Sino-Danish Center for Education and Research (SDC) SDC Building, Yanqihu Campus, University of Chinese Academy of Sciences, 380 Huaibeizhuang, Huairou District, 101408 Beijing, China
| | | | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thor Hvid-Olsen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Matteo M Wauters
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Michele Burrello
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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Liu D, Liu F, Liu Y, Pang Z, Zhuang X, Yin Y, Dong S, He L, Tan Y, Liao L, Chen F, Yang ZX. Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200415. [PMID: 35257494 DOI: 10.1002/smll.202200415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Changsha, Changsha, 410082, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
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