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Zhang L, Zhao Y, Liu Y, Gao G. High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe. NANOSCALE 2023; 15:18910-18919. [PMID: 37975757 DOI: 10.1039/d3nr04627c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
The emerging two-dimensional (2D) Janus systems with broken symmetry provide a new platform for designing ultrathin multifunctional spintronic materials. Recently, based on experimental monolayer MnSe2, ferromagnetism was predicted in Janus MnXY (X ≠ Y = S, Se, Te) monolayers; however, they exhibit low Curie temperatures and small magnetic anisotropic energies. To improve the Curie temperature and magnetic anisotropy, herein, we systemically explore the stability and electronic and magnetic properties of Janus MnSeTe and MnSTe monolayers under strain and carrier-doping using first-principles calculations and Monte Carlo simulations. It is found that both MnSeTe and MnSTe monolayers possess robustly high spin polarization with rational strain and carrier-doping. Both tensile strain and hole doping strengthen the ferromagnetic super-exchange interactions of the two nearest Mn atoms mediated by chalcogen atoms and exceedingly improve the perpendicular magnetic anisotropic energies (by up to 3.1 meV per f.u. for MnSeTe and 2.0 meV per f.u. for MnSTe). The Te-5p intraorbital hybridizations contributed to the main magnetic anisotropy. More remarkably, the tensile strain and hole doping collectively increase the Curie temperatures of MnSeTe and MnSTe to above and near room temperature (345 and 290 K, respectively). The present study reveals that Janus MnSeTe and MnSTe monolayers with robustly high spin polarization, room-temperature ferromagnetism and large perpendicular magnetic anisotropy are promising candidates for ultrathin multifunctional spintronic materials. This study will be of great interest for further experimental and theoretical explorations of 2D Janus manganese dichalcogenides.
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Affiliation(s)
- Long Zhang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yan Zhao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yuqi Liu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Guoying Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
- Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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2
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Wang P, Liu Q, Liu N, Kuang M, Yang T, Wang B, Ju M, Yuan H, Jiang X, Zhao J. Electric Field-Controlled Magneto-Optical Kerr Effect in A-Type Antiferromagnetic Fe 2CX 2 (X = F, Cl) and Its Janus Monolayer. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37916432 DOI: 10.1021/acsami.3c11811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
The magneto-optical Kerr effect (MOKE) is a powerful probe of magnetism and has recently gained new attention in antiferromagnetic (AFM) materials. Through extensive first-principles calculations and group theory analysis, we have identified Fe2CX2 (X = F, Cl) and Janus Fe2CFCl monolayers as ideal A-type collinear AFM materials with high magnetic anisotropy and Néel temperatures. By applying a vertical external electrical field (Ef) of 0.2 V/Å, the MOKE is activated for Fe2CF2 and Fe2CCl2 monolayers without changing their magnetic ground state, and the maximum Kerr rotation angles are 0.13 and 0.08°, respectively. Due to the out-of-plane spontaneous polarization, the intrinsic and nonvolatile MOKE is found in the Janus Fe2CFCl monolayer and the maximal Kerr rotation angle without external electronic field is 0.25°. Moreover, the intrinsic built-in electronic field also gives origin to more robust A-type AFM ordering and reversible Kerr angle against external Ef. Our study suggests that Ef is an effective tool for controlling MOKE in two-dimensional (2D) AFM materials. This research opens the possibility of related studies and applications in AFM spintronics.
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Affiliation(s)
- Peng Wang
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Qinxi Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Nanshu Liu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100190, China
| | - Minquan Kuang
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Tie Yang
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Biao Wang
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Meng Ju
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Hongkuan Yuan
- Chongqing Key Laboratory of Micro & Nano Structure Optoelectronics, School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, (Dalian University of Technology), Ministry of Education, Dalian 116024, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, (Dalian University of Technology), Ministry of Education, Dalian 116024, China
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Zhou Z, Zheng Z, He J, Wang J, Prezhdo OV, Frauenheim T. Ultrafast Laser Control of Antiferromagnetic-Ferrimagnetic Switching in Two-Dimensional Ferromagnetic Semiconductor Heterostructures. NANO LETTERS 2023. [PMID: 37307217 DOI: 10.1021/acs.nanolett.3c01350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Realizing ultrafast control of magnetization switching is of crucial importance for information processing and recording technology. Here, we explore the laser-induced spin electron excitation and relaxation dynamics processes of CrCl3/CrBr3 heterostructures with antiparallel (AP) and parallel (P) systems. Although an ultrafast demagnetization of CrCl3 and CrBr3 layers occurs in both AP and P systems, the overall magnetic order of the heterostructure remains unchanged due to the laser-induced equivalent interlayer spin electron excitation. More crucially, the interlayer magnetic order switches from antiferromagnetic (AFM) to ferrimagnetic (FiM) in the AP system once the laser pulse disappears. The microscopic mechanism underpinning this magnetization switching is dominated by the asymmetrical interlayer charge transfer combined with a spin-flip, which breaks the interlayer AFM symmetry and ultimately results in an inequivalent shift in the moment between two FM layers. Our study opens up a new idea for ultrafast laser control of magnetization switching in two-dimensional opto-spintronic devices.
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Affiliation(s)
- Zhaobo Zhou
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 28359, Germany
| | - Zhenfa Zheng
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Junjie He
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Oleg V Prezhdo
- Departments of Chemistry, and Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Thomas Frauenheim
- School of Science, Constructor University, Bremen 28759, Germany
- Beijing Computational Science Research Center, Beijing 100193, China
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518109, China
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4
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Niu Y, Lv H, Wu X, Yang J. Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor. J Phys Chem Lett 2023; 14:4042-4049. [PMID: 37093651 DOI: 10.1021/acs.jpclett.3c00883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Two-dimensional (2D) antiferromagnets have drawn great interest for absence of stray fields in antiferromagnetic (AFM) spintronics. However, it remains challenging to manipulate their spin polarization above room temperature for practical applications. Herein, a general strategy is reported to realize the control of spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on first-principles calculations, exemplified by transition metal monohalide MnCl and carbide MXenes Cr2CX2 (X = F, Cl, OH). It shows that 100% spin polarization can be induced around Fermi level with spin splitting gap related to the spatial distribution of spin density in real space. Meanwhile, the Neél temperature of 2D MnCl and Cr2CF2 remains above room temperature under external electric field up to 0.6 V/Å. This study exhibits the potential for application of 2D AFM semiconductors in electric-field-controlled spintronics.
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Affiliation(s)
- Yijie Niu
- CAS Key Laboratory of Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Haifeng Lv
- CAS Key Laboratory of Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- CAS Key Laboratory of Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230088, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Jinlong Yang
- CAS Key Laboratory of Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience, and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230088, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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5
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Li J, Li X, Yang J. A review of bipolar magnetic semiconductors from theoretical aspects. FUNDAMENTAL RESEARCH 2022; 2:511-521. [PMID: 38934007 PMCID: PMC11197773 DOI: 10.1016/j.fmre.2022.04.002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2021] [Revised: 03/31/2022] [Accepted: 04/06/2022] [Indexed: 11/19/2022] Open
Abstract
Spintronics, which employs electrons' spin degree of freedom in data storage and transmission, acts as a promising candidate for next-generation information technology owing to its improved processing speed and reduced power consumption. To seek and design materials with highly spin polarized carriers and find an efficient way to control the spin polarization direction of carriers are critical and urgent to spintronics applications. In this aspect, the bipolar magnetic semiconductor (BMS) serves as an ideal solution since it can generate currents with 100% spin polarization, and the direction of spin polarization is easily tunable by an external gate voltage. Up to now, there have been lots of BMSs predicted by first-principles calculations, however, most of them are extrinsically induced by chemical or physical modifications, and a generalized scheme for designing BMS materials is still lacking. This paper is aimed to briefly review the existing BMS materials designed by theoretical simulations, analyze the main obstacles to experimental realization, and put forward suggestions for future development.
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Affiliation(s)
- Junyao Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xingxing Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jinlong Yang
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
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6
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Wang P, Wu D, Zhang K, Wu X. Two-Dimensional Quaternary Transition Metal Sulfide CrMoA 2S 6 (A = C, Si, or Ge): A Bipolar Antiferromagnetic Semiconductor with a High Néel Temperature. J Phys Chem Lett 2022; 13:3850-3856. [PMID: 35467873 DOI: 10.1021/acs.jpclett.2c00836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bipolar antiferromagnetic semiconductors (BAFSs) make up a class of spintronic materials, holding great promise for the manipulation of spin-polarized currents simply upon application of a voltage gate, but only a few two-dimensional (2D) BAFSs with a high Néel temperature (TN) have been reported. Here, we report a family of magnetic quaternary MM'A2S6 (M = V, Cr, Mn, or Fe; M' = Nb, Mo, Tc, or Ru; A = C, Si, Ge, or Sn) nanosheets by isovalent alloying layered transitional metal trisulfides (MAS3) based on first-principles calculations. Our results show that 2D CrMoA2S6 (A = C, Si, or Ge) nanosheets are BAFSs with band gaps ranging from 1.89 to 2.23 eV. Among them, 2D CrMoC2S6 has the highest TN of 556 K with robust magnetism against carrier doping and external in-plane strain due to a strong delocalization superexchange interaction between the Cr3+ and Mo3+ cations. This study establishes that CrMoC2S6 is an ideal prototype platform for realizing electric control of spin polarization in 2D materials.
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Affiliation(s)
- Peng Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Daoxiong Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan Provincial Key Lab of Fine Chemistry, School of Chemical Engineering and Technology, Hainan University, Haikou 570228, China
| | - Kai Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, School of Chemistry and Materials Sciences, CAS Key Laboratory of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
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7
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Lv H, Li X, Wu D, Liu Y, Li X, Wu X, Yang J. Enhanced Curie Temperature of Two-Dimensional Cr(II) Aromatic Heterocyclic Metal-Organic Framework Magnets via Strengthened Orbital Hybridization. NANO LETTERS 2022; 22:1573-1579. [PMID: 35148110 DOI: 10.1021/acs.nanolett.1c04398] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) metal-organic frameworks (MOFs) with room-temperature magnetism are highly desirable but challenging due to the weak superexchange interaction between metal atoms. For this purpose, strengthening the hybridization between metal ion and organic linkage presents an experiment-feasible chemical solution to enhance the Curie temperature. Here, we report three 2D Cr(II) aromatic heterocyclic MOF magnets with enhanced Curie temperature by bridging Cr(II) ions with pyrazine, 1,4-diphosphinine, and 1,4-diarsenin linkers, i.e., Cr(pyz)2, Cr(diphos)2, and Cr(diarse)2, and using first-principles calculations. Our results show that Cr(pyz)2, Cr(diphos)2, and Cr(diarse)2 are ferrimagnetic semiconductors. In particular, the Curie temperature of Cr(pyz)2 is estimated to be about 344 K and could be enhanced to 512 and 437 K in Cr(diphos)2 and Cr(diarse)2 by strengthening the hybridization between Cr ions and organic linkers via d-π* direct exchange interaction. This study presents a prototype to obtain room-temperature magnetism in 2D Cr(II)-based MOF magnets for nanoscale spintronics applications.
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Affiliation(s)
- Haifeng Lv
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiangyang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Daoxiong Wu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ying Liu
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory for Materials for Energy Conversion, School of Chemistry and Materials Science, CAS Center for Excellence in Nanoscience and Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
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Han J, Feng Y, Gao G. VSi2P4/FeCl2 van der Waals heterostructure: A two-dimensional reconfigurable magnetic diode. Phys Chem Chem Phys 2022; 24:19734-19742. [DOI: 10.1039/d2cp02388a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The reconfigurable magnetic tunnel diode has recently been proposed as a promising approach to decrease the base collector leakage currents. However, conventional bulk interfaces usually suffer from strong Fermi level...
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Li D, Li S, Zhong C, He J. Tuning magnetism at the two-dimensional limit: a theoretical perspective. NANOSCALE 2021; 13:19812-19827. [PMID: 34825688 DOI: 10.1039/d1nr06835k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The discovery of two-dimensional (2D) magnetic materials provides an ideal testbed for manipulating the magnetic properties at the atomically thin and 2D limit. This review gives recent progress in the emergent 2D magnets and heterostructures, focusing on the theory side. We summarize different theoretical models, ranging from the atomic to micrometer-scale, used to describe magnetic orders. Then, the current strategies for tuning magnetism in 2D materials are further discussed, such as electric field, magnetic field, strain, optics, chemical functionalization, and spin-orbit engineering. Finally, we conclude with the future challenges and opportunities for 2D magnetism.
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Affiliation(s)
- Dongzhe Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Shuo Li
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Chengyong Zhong
- Institute for Advanced Study, Chengdu University, Chengdu 610100, P. R. China.
| | - Junjie He
- Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, 2835, Bremen, Germany
- Department of Physical and Macromolecular Chemistry & Charles University Centre of Advanced Materials, Faculty of Science, Charles University in Prague, Hlavova 8, Prague 2, 128 43, Czech Republic.
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