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Chen Y, Luo Y, Duan Y, Xu X, Zhang Y, Liu Q, Gao Y, Xiao L, Yang H, Wang S. Photophysical Properties of Submicrometer Ultrathin Perovskite Single-Crystal Films. J Phys Chem Lett 2024:7931-7938. [PMID: 39073987 DOI: 10.1021/acs.jpclett.4c01473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
Organic-inorganic hybrid perovskite (OIHP) has attracted a great deal of interest with respect to diverse optoelectronic devices. However, the photophysical properties of the OIHP require further understanding because most of the investigations have been conducted with polycrystalline perovskites, which contain high-density structural defects. Here, diverse photophysical properties, including structural characterization, spectroscopic features, and photoexcited products, are studied in submicrometer CH3NH3PbBr3 ultrathin single-crystal (UTSC) films. Unlike polycrystalline films and large single crystals, the UTSC film provides a unique platform for studying spectroscopic characteristics of single-crystal perovskites. Compared with the polycrystalline film, the UTSC film presents an atomically flat morphology and near-perfect lattice with a lower defect density, leading to an isotropic system that can be applied in the construction of high-performance optoelectronic devices. Furthermore, a long lifetime emissive channel assigned to the trion is indicated, which is scarcely found in perovskite polycrystalline films. Our results profoundly improve our understanding of their photophysical properties and expand the horizons for perovskite materials in photonic applications.
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Affiliation(s)
- Yan Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Yijie Luo
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Yiqun Duan
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Xiayuan Xu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Yuxin Zhang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Qinyun Liu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Yunan Gao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Lixin Xiao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
| | - Hong Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
| | - Shufeng Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
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Han Q, Wang J, Tian S, Hu S, Wu X, Bai R, Zhao H, Zhang DW, Sun Q, Ji L. Inorganic perovskite-based active multifunctional integrated photonic devices. Nat Commun 2024; 15:1536. [PMID: 38378620 PMCID: PMC10879536 DOI: 10.1038/s41467-024-45565-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Accepted: 01/25/2024] [Indexed: 02/22/2024] Open
Abstract
The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.
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Affiliation(s)
- Qi Han
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jun Wang
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China.
| | - Shuangshuang Tian
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China
| | - Shen Hu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
| | - Xuefeng Wu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China
| | - Rongxu Bai
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Haibin Zhao
- Department of Optical Science and Engineering, School of Information Science and Technology, Key Laboratory of Micro & Nano Photonic Structures, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, and Shanghai Ultra-precision Optical Manufacturing Engineering Research Center, Fudan University, Shanghai, 200433, China
| | - David W Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Jiashan Fudan Institute, Jiaxing, 314110, China
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
| | - Qingqing Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China.
| | - Li Ji
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
- Jiashan Fudan Institute, Jiaxing, 314110, China.
- Zhangjiang Fudan International Innovation Center, Shanghai, 201210, China.
- Hubei Yangtze Memory Laboratories, Wuhan, 430205, China.
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Zhang Z, Kim W, Ko MJ, Li Y. Perovskite single-crystal thin films: preparation, surface engineering, and application. NANO CONVERGENCE 2023; 10:23. [PMID: 37212959 PMCID: PMC10203094 DOI: 10.1186/s40580-023-00373-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Accepted: 05/08/2023] [Indexed: 05/23/2023]
Abstract
Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.
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Affiliation(s)
- Zemin Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China
| | - Wooyeon Kim
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
| | - Min Jae Ko
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea.
| | - Yuelong Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China.
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Tang H, Wang Y, Chen Y, Wang K, He X, Huang C, Xiao S, Yu S, Song Q. Ultrahigh-Q Lead Halide Perovskite Microlasers. NANO LETTERS 2023; 23:3418-3425. [PMID: 37042745 DOI: 10.1021/acs.nanolett.3c00463] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Lead halide perovskites have been promising platforms for micro- and nanolasers. However, the fragile nature of perovskites poses an extreme challenge to engineering a cavity boundary and achieving high-quality (Q) modes, severely hindering their practical applications. Here, we combine an etchless bound state in the continuum (BIC) and a chemically synthesized single-crystalline CsPbBr3 microplate to demonstrate on-chip integrated perovskite microlasers with ultrahigh Q factors. By pattering polymer microdisks on CsPbBr3 microplates, we show that record high-Q BIC modes can be formed by destructive interference between different in-plane radiation from whispering gallery modes. Consequently, a record high Q-factor of 1.04 × 105 was achieved in our experiment. The high repeatability and high controllability of such ultrahigh Q BIC microlasers have also been experimentally confirmed. This research provides a new paradigm for perovskite nanophotonics.
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Affiliation(s)
- Haijun Tang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Yuhan Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Yimu Chen
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Kaiyang Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xianxiong He
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Can Huang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi P. R. China
| | - Shaohua Yu
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi P. R. China
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Liao K, Zhong Y, Du Z, Liu G, Li C, Wu X, Deng C, Lu C, Wang X, Chan CT, Song Q, Wang S, Liu X, Hu X, Gong Q. On-chip integrated exceptional surface microlaser. SCIENCE ADVANCES 2023; 9:eadf3470. [PMID: 37043581 PMCID: PMC10096563 DOI: 10.1126/sciadv.adf3470] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
The on-chip integrated visible microlaser is a core unit of high-speed visible-light communication with huge bandwidth resources, which needs robustness against fabrication errors, compressible linewidth, reducible threshold, and in-plane emission. However, until now, it has been a great challenge to meet these requirements simultaneously. Here, we report a scalable strategy to realize a robust on-chip integrated visible microlaser with further improved lasing performances enabled by the increased orders (n) of exceptional surfaces, and experimentally verify the strategy by demonstrating the performances of a second-order exceptional surface-tailored microlaser. We further prove the potential application of the strategy by discussing an exceptional surface-tailored topological microlaser with unique performances. This work lays a foundation for further development of on-chip integrated high-speed visible-light communication and processing systems, provides a platform for the fundamental study of non-Hermitian photonics, and proposes a feasible method of joint research for non-Hermitian photonics with nonlinear optics and topological photonics.
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Affiliation(s)
- Kun Liao
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Zhuochen Du
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
| | - Guodong Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
| | - Chentong Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Chunhua Deng
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Cuicui Lu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Xingyuan Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Che Ting Chan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
| | - Qinghai Song
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Shufeng Wang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter, Beijing Academy of Quantum Information Sciences, Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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