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Yang L, Zheng F, Wu J, Hou Y, Qi X, Miao Y, Wang X, Huang L, Liu X, Zhang J, Zhu Y, Hu Z. Unveiling Local Current Behavior and Manipulating Grain Homogenization of Perovskite Films for Efficient Solar Cells. ACS NANO 2024; 18:17547-17556. [PMID: 38935688 DOI: 10.1021/acsnano.4c00911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Achieving high power conversion efficiency in perovskite solar cells (PSCs) heavily relies on fabricating homogeneous perovskite films. However, understanding microscopic-scale properties such as current generation and open-circuit voltage within perovskite crystals has been challenging due to difficulties in quantifying intragrain behavior. In this study, the local current intensity within state-of-the-art perovskite films mapped by conductive atomic force microscopy reveals a distinct heterogeneity, which exhibits a strong anticorrelation to the external biases. Particularly under different external bias polarities, specific regions in the current mapping show contrasting conductivity. Moreover, grains oriented differently exhibit varied surface potentials and currents, leading us to associate this local current heterogeneity with the grain orientation. It was found that the films treated with isopropanol exhibit ordered grain orientation, demonstrating minimized lattice heterogeneity, fewer microstructure defects, and reduced electronic disorder. Importantly, devices exhibiting an ordered orientation showcase elevated macroscopic optoelectronic properties and boosted device performance. These observations underscore the critical importance of fine-tuning the grain homogenization of perovskite films, offering a promising avenue for further enhancing the efficiency of PSCs.
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Affiliation(s)
- Liu Yang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Fei Zheng
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Jun Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yanna Hou
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xiaorong Qi
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yuchen Miao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xu Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Like Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xiaohui Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Jing Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yuejin Zhu
- School of Science and Engineering, College of Science and Technology, Ningbo University, Ningbo 315300, China
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
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Zhong Y, Yang J, Wang X, Liu Y, Cai Q, Tan L, Chen Y. Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302552. [PMID: 37067957 DOI: 10.1002/adma.202302552] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 04/13/2023] [Indexed: 06/19/2023]
Abstract
In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.
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Affiliation(s)
- Yang Zhong
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Jia Yang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Xueying Wang
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Yikun Liu
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Qianqian Cai
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Licheng Tan
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
| | - Yiwang Chen
- College of Chemistry and Chemical Engineering/Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- National Engineering Research Center for Carbohydrate Synthesis/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
- College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou, 341000, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
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Jiang LL, Chen MM, Tang XD, Tang Y, Li SJ, Li Y, Li HH, Liu HR. Reduced electron relaxation time of perovskite films via g-C 3N 4 quantum dot doping for high-performance perovskite solar cells. RSC Adv 2023; 13:16935-16942. [PMID: 37288376 PMCID: PMC10242296 DOI: 10.1039/d3ra02391e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2023] [Accepted: 05/25/2023] [Indexed: 06/09/2023] Open
Abstract
Perovskite film-quality is a crucial factor to improve the photovoltaic properties of perovskite solar cells, which is closely related to the morphology of crystallization grain size of the perovskite layer. However, defects and trap sites are inevitably generated on the surface and at the grain boundaries of the perovskite layer. Here, we report a convenient method for preparing dense and uniform perovskite films, employing g-C3N4 quantum dots doped into the perovskite layer by regulating proper proportions. This process produces perovskite films with dense microstructures and flat surfaces. As a result, the higher fill factor (0.78) and a power conversion efficiency of 20.02% are obtained by the defect passivation of g-C3N4QDs.
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Affiliation(s)
- Lu-Lu Jiang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Meng-Meng Chen
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Xiao-Dan Tang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Ying Tang
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Shao-Jie Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Ying Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Hang-Hui Li
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
| | - Hai-Rui Liu
- College of Material Science and Engineering, Henan Normal University Xinxiang 453000 China
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Liu Y, Yang J, Lawrie BJ, Kelley KP, Ziatdinov M, Kalinin SV, Ahmadi M. Disentangling Electronic Transport and Hysteresis at Individual Grain Boundaries in Hybrid Perovskites via Automated Scanning Probe Microscopy. ACS NANO 2023; 17:9647-9657. [PMID: 37155579 DOI: 10.1021/acsnano.3c03363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Underlying the rapidly increasing photovoltaic efficiency and stability of metal halide perovskites (MHPs) is the advancement in the understanding of the microstructure of polycrystalline MHP thin film. Over the past decade, intense efforts have been aimed at understanding the effect of microstructures on MHP properties, including chemical heterogeneity, strain disorder, phase impurity, etc. It has been found that grain and grain boundary (GB) are tightly related to lots of microscale and nanoscale behavior in MHP thin films. Atomic force microscopy (AFM) is widely used to observe grain and boundary structures in topography and subsequently to study the correlative surface potential and conductivity of these structures. For now, most AFM measurements have been performed in imaging mode to study the static behavior; in contrast, AFM spectroscopy mode allows us to investigate the dynamic behavior of materials, e.g., conductivity under sweeping voltage. However, a major limitation of AFM spectroscopy measurements is that they require manual operation by human operators, and as such only limited data can be obtained, hindering systematic investigations of these microstructures. In this work, we designed a workflow combining the conductive AFM measurement with a machine learning (ML) algorithm to systematically investigate grain boundaries in MHPs. The trained ML model can extract GBs locations from the topography image, and the workflow drives the AFM probe to each GB location to perform a current-voltage (IV) curve automatically. Then, we are able to have IV curves at all GB locations, allowing us to systematically understand the property of GBs. Using this method, we discovered that the GB junction points are less conductive, potentially more photoactive, and can play critical roles in MHP stability, while most previous works only focused on the difference between GB and grains.
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Affiliation(s)
- Yongtao Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Jonghee Yang
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Benjamin J Lawrie
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Maxim Ziatdinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Sergei V Kalinin
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Mahshid Ahmadi
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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Xue Z, Xu Y, Jin C, Liang Y, Cai Z, Sun J. Halide perovskite photoelectric artificial synapses: materials, devices, and applications. NANOSCALE 2023; 15:4653-4668. [PMID: 36805124 DOI: 10.1039/d2nr06403k] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, there has been a research boom on halide perovskites (HPs) whose outstanding performance in photovoltaic and optoelectronic fields is obvious to all. In particular, HP materials find application in the development of artificial synapses. HP-based synapses have great potential for artificial neuromorphic systems, which is due to their outstanding optoelectronic properties, femtojoule-level energy consumption, and simple fabrication process. In this review, we present the physical properties of HPs and describe two types of synaptic devices including two-terminal (2T) memristors and three-terminal (3T) transistors. The HP layer in 2T memristors can realize the change in the device conductance through physical mechanisms dominated by ion migration. On the other hand, HPs in 3T transistors can be used as efficient light-absorbing layers and rely on some special device structures to provide reliable current changes. In the final section of the article, we discuss some of the existing applications of HP-based synapses and bottlenecks to be solved.
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Affiliation(s)
- Zhengyang Xue
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Yihuan Liang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Zihao Cai
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South, University, Changsha, Hunan 410083, P. R. China.
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China
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